RS512M16Z2DD-62DT vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of RS512M16Z2DD-62DT by Rayson and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Rayson
RS512M16Z2DD-62DT
RS512M16Z2DD-62DT - 8Gbit DDR4 SDRAM 512Mx16 | Rayson
RS512M16Z2DD-62DT β ActiveSamsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSpecification Comparison
| Parameter | RS512M16Z2DD-62DT | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Rayson | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.80 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Total Density | 8 Gbit | β |
| Data Rate | 3200 Mb/s/pin | 2400 Mbps |
| CAS Latency | 22 | Programmable (e.g., 16, 17, 18) |
| tRCD (min) | 13.75 ns | β |
| tRP (min) | 13.75 ns | β |
| tRAS (min) | 32 ns | β |
| tRC (min) | 45.75 ns | β |
| tCK (min) | 0.625 ns | β |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Supply Voltage (VDD) | 1.14V to 1.26V | 1.2 V (1.14V to 1.26V) |
| Supply Voltage (VDDQ) | 2.375V to 2.75V | β |
| Clock Frequency | 1.6 GHz | β |
| Package | FBGA-96 (7.5x13 mm) | 96-ball FBGA (9mm x 13mm) |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| VPP Voltage | β | 2.5 V |
| Operating Temperature | β | 0Β°C to +95Β°C (case) |
| Interface | β | 16-bit I/O |
| Banks | β | 16 (4 bank groups) |
| Burst Length | β | 8 (BL8) |
| Refresh | β | Temperature-compensated self-refresh (TCSR) |
| RoHS | β | Compliant |
| Mounting Type | β | Surface Mount |