TLP183(GB-TPL vs TLP182GB-TPL.E(T Comparison

Detailed side-by-side comparison of TLP183(GB-TPL by Toshiba and TLP182GB-TPL.E(T by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter TLP183(GB-TPL TLP182GB-TPL.E(T
Brand Toshiba Toshiba
Category Optocouplers Optocouplers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.29
Manufacturer Toshiba Semiconductor and Storage —
Product Type Phototransistor Output Optocoupler —
Number of Channels 1 1
Input Type DC (InGaAs Infrared LED) AC (dual antiparallel LEDs)
Output Type Phototransistor (BJT) Phototransistor (NPN)
Isolation Voltage 3750 Vrms 3750 Vrms
Package 6-SO (SO6, 4-pin functional) 4-Lead SO6 (SMD)
Mounting Type Surface Mount Surface Mount
Forward Current (IF) 50 mA max —
Reverse Voltage (VR) 6 V max —
Forward Voltage (VF) 1.25 V typ at IF=10 mA —
Collector-Emitter Voltage (Vceo) 80 V max 80 V
Emitter-Collector Voltage (VECO) 7 V max —
Collector Current (Ic) 50 mA max 50 mA
CTR (Current Transfer Ratio) 50% min (IF=5 mA, VCE=5 V) - GB rank —
Operating Temperature -55 C to +125 C —
Storage Temperature -55 C to +150 C —
CTR Rank GB (50-600% range) —
Rise Time (tr) 5 us typ —
Fall Time (tf) 5 us typ —
RoHS Status Compliant Compliant
Tape and Reel Packaging TPL (L direction, 3000 pcs/reel) —
Packing Option Code E (RoHS) —
Part Number — TLP182GB-TPL.E(T
Current Transfer Ratio (CTR) — 50% min @ IF=5 mA, VCE=5 V
Collector-Emitter Saturation Voltage (VCEsat) — 300 mV @ IC=2.4 mA, IF=8 mA
Turn-On Time (ton) — 2 us
Turn-Off Time (toff) — 3 us
Operating Temperature Range — -55 degC to +125 degC
Input Forward Current (IF) — 50 mA max
Input Reverse Voltage (VR) — 5 V
Power Dissipation (PC) — 200 mW

Datasheets & Resources

Browse All Products Create BOM Request Quote