W634GU6RB-09 vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of W634GU6RB-09 by Winbond and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | W634GU6RB-09 | H5AN8G6NDJR |
|---|---|---|
| Brand | Winbond | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.69 | $35.00 |
| Memory Type | DDR3L SDRAM | DDR4 SDRAM |
| Memory Size | 4Gbit (512M x 8) | β |
| Supply Voltage | 1.35V | 1.2 V |
| Clock Frequency | 1.067 GHz | β |
| Data Rate | 2133 Mbps | 3200 Mbps (DDR4-3200) |
| Access Time | 20 ns | β |
| Interface | Parallel | β |
| Package | 96-VFBGA (7.5x13 mm) | 96-ball FBGA (13mm x 7.5mm) |
| Mounting Type | Surface Mount | β |
| Operating Temperature | -40Β°C to 95Β°C | β |
| RoHS Status | Compliant | β |
| Halogen Free | Yes | β |
| Organization | 512M x 8 | 512M x 16 |
| Terminal Pitch | [DATA_NEEDED: Terminal Pitch] | β |
| Number of Pins | 96 | β |
| Density | β | 8 Gb |
| Number of Terminals | β | 96 |
| Maximum Supply Voltage (Vsup) | β | 1.26 V |
| Maximum Operating Temperature | β | 85 Β°C |
| Burst Length | β | 8 (BL8), 4 (BC4) |
| CAS Latency | β | 22 cycles (at 3200 Mbps) |
| Access Mode | β | Multi Bank Page Burst |
| JESD-30 Code | β | R-PBGA-B96 |
| RoHS | β | Compliant |
| Features | β | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |