W634GU6RB-09 vs MT40A512M16LY-062E Comparison
Detailed side-by-side comparison of W634GU6RB-09 by Winbond and MT40A512M16LY-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-062E
MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16LY-062E β ActiveSpecification Comparison
| Parameter | W634GU6RB-09 | MT40A512M16LY-062E |
|---|---|---|
| Brand | Winbond | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.69 | $6.65 |
| Memory Type | DDR3L SDRAM | DDR4 SDRAM |
| Memory Size | 4Gbit (512M x 8) | 8 Gbit |
| Supply Voltage | 1.35V | β |
| Clock Frequency | 1.067 GHz | 1.6 GHz |
| Data Rate | 2133 Mbps | 3200 MT/s |
| Access Time | 20 ns | 19 ns |
| Interface | Parallel | β |
| Package | 96-VFBGA (7.5x13 mm) | 96-ball FBGA (7.5 x 13.5 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40Β°C to 95Β°C | -40C to +95C (IT grade) |
| RoHS Status | Compliant | Compliant |
| Halogen Free | Yes | β |
| Organization | 512M x 8 | 512M x 16 |
| Terminal Pitch | [DATA_NEEDED: Terminal Pitch] | β |
| Number of Pins | 96 | β |
| Supply Voltage VDD/VDDQ | β | 1.2 V +/- 60 mV |
| Supply Voltage VPP | β | 2.5 V (-125 mV, +250 mV) |
| Bank Architecture | β | 16 banks in 2 groups of 4 (x16) |
| Refresh | β | 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C |
| I/O Interface | β | 1.2 V pseudo open-drain |
| Features | β | Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ |