W634GU6RB-11 vs H5TC4G63AFR-PBR Comparison
Detailed side-by-side comparison of W634GU6RB-11 by Winbond and H5TC4G63AFR-PBR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | W634GU6RB-11 | H5TC4G63AFR-PBR |
|---|---|---|
| Brand | Winbond | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $5.91 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | β |
| Interface | Parallel | β |
| Clock Frequency | 933 MHz | 800 MHz |
| Data Rate | 1866 MT/s | 1600 Mbps (PC3L-12800) |
| CAS Latency | 20 ns | 11 |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35V (1.5V compatible) |
| Package | 96-VFBGA (7.5x13 mm) | 96-ball FBGA (PBGA96) |
| Operating Temperature | -40Β°C to +95Β°C | 0C to +95C |
| Mounting Type | Surface Mount | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes | Yes |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| ZQ Calibration | Yes | β |
| Asynchronous Reset | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| Organization | β | 256M x 16 |
| Total Capacity | β | 4Gb |
| tRCD/tRP | β | 11 |
| tCK | β | 1.25 ns |
| tRCD | β | 13.125 ns |
| Burst Length | β | 8 (BL8) with burst chop (BC4) |
| Number of Banks | β | 8 |
| Refresh Interval | β | 7.8us at 85C, 3.9us at 95C |
| Package Dimensions | β | 13.5mm x 9.0mm |
| Ball Pitch | β | 0.8mm |
| I/O Interface | β | SSTL-15 |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |