W634GU6RB-11 vs K4B4G1646E-BYMATCV Comparison
Detailed side-by-side comparison of W634GU6RB-11 by Winbond and K4B4G1646E-BYMATCV by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV β ActiveSpecification Comparison
| Parameter | W634GU6RB-11 | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | Winbond | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | 4 Gbit (256M x 16) |
| Interface | Parallel | β |
| Clock Frequency | 933 MHz | β |
| Data Rate | 1866 MT/s | 1866 Mbps |
| CAS Latency | 20 ns | Programmable (e.g., 13, 12, 11) |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V |
| Package | 96-VFBGA (7.5x13 mm) | 96-ball FBGA |
| Operating Temperature | -40Β°C to +95Β°C | β |
| Mounting Type | Surface Mount | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | Yes |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| ZQ Calibration | Yes | β |
| Asynchronous Reset | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| I/O Voltage (VDDQ) | β | 1.35 V |
| Number of Pins | β | 96 |
| Operating Temperature Range | β | -40Β°C to +95Β°C |
| Number of Banks | β | 8 |
| Burst Length | β | 8 (with burst chop 4) |
| On-Die Termination (ODT) | β | Yes |
| Self-Refresh | β | Yes |