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W78L812A24FL

W78L812A24FL - 8-Bit 24MHz 8051 Flash MCU | Nuvoton

The Nuvoton W78L812A24FL is an 8-bit 8051-compatible Flash microcontroller with an operating clock of 24 MHz, 8 KB of Flash EPROM, 256 bytes of RAM, and a 44-pin QFP package. It operates from 2.4 V to 5.5 V and integrates four 8-bit bidirectional I/O ports, an additional 5-bit P4 port, three 16-bit timer/counters, a hardware watchdog timer, and a serial port. An 8051-compatible microcontroller is a compact embedded-control device built around the classic MCS-51 instruction set. Microcontrollers combine a CPU, program memory, data memory, timers, serial communication, and digital I/O on one integrated circuit. This integration allows control systems to monitor inputs, execute embedded software, operate timers, and exchange serial data without requiring a separate processor and supporting components. The W78L812A24FL combines 8 KB of Flash EPROM with 256 bytes of RAM, providing useful program storage for compact embedded applications. Its four 8-bit ports and dedicated P4 port offer multiple digital interfaces, while the three 16-bit timer/counters support periodic events, timing measurements, and waveform generation. The hardware watchdog timer adds an independent mechanism for recovering from stalled program execution. The 24 MHz operating frequency provides a higher instruction-processing rate than lower-frequency members of the same device family while retaining standard 8051 instruction-set compatibility. This makes the device suitable for designs based on established 8051 firmware, industrial controllers, compact instruments, appliance controls, and general-purpose embedded products requiring deterministic digital I/O. Typical uses include motor and actuator sequencing, temperature-instrument signal acquisition, keypad interfaces, LED status panels, programmable timers, and serial-connected control modules. The 2.4 V to 5.5 V operating range supports both lower-voltage and conventional 5 V designs, allowing system designers to choose the MCU around the power architecture of the finished product. PCB design should preserve stable supply decoupling near the power pins and route the oscillator, reset, and high-speed signals according to the manufacturer reference layout. Because the device offers limited RAM, firmware should use the available data memory carefully. Firmware development also benefits from 8051-compatible tools because the instruction set remains compatible with the standard 8051 architecture. This page organizes the principal electrical, memory, peripheral, package, and application characteristics of the W78L812A24FL. It also identifies same-family alternatives and explains the practical distinctions that matter when evaluating an 8051-compatible control IC for an embedded product.

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W78L812A24PL

W78L812A24PL - 8-bit 8051 MCU, 8KB Flash, 24MHz | Nuvoton

The Nuvoton Technology Corporation W78L812A24PL is an 8-bit microcontroller with a fully 8051-compatible instruction set, an 8 KB Flash EPROM program memory, 256 bytes of RAM and a 24 MHz operating frequency, housed in a 44-pin PLCC (PL) package with a 2.4 V to 5.5 V supply range. An 8-bit MCU is the simplest tier of the microcontroller hierarchy: MCU -> 8-bit microcontroller -> 8051 core -> embedded control IC. The W78L812 belongs to the 8051 family of single-chip computers, combining a CPU core, program memory, data memory and peripherals on one die. Because the instruction set is compatible with the standard 8051, existing 8051 assembler, C compiler and bootloader tooling can be reused without architectural changes. Key features include 8 KB of Flash EPROM instead of masked ROM, which allows field re-programming and simplifies product revisions. The device carries 256 bytes of internal RAM plus a 256-byte XRAM area, four 8-bit bi-directional bit-addressable I/O ports (P0 through P3), an additional 5-bit port P4, and three 16-bit timer/counter blocks with interrupt support for timing, pulse counting and periodic event generation. A 24 MHz oscillator gives roughly ten times the execution rate of a classic 12 MHz 8051. Because the instruction set, memory map and port structure follow the established 8051 convention, the W78L812A24PL is a natural fit for cost-sensitive embedded controllers that must run existing 8051 code. The wide 2.4 V to 5.5 V supply range allows direct operation from unregulated industrial rails, 3.3 V systems or rechargeable cells after regulation. Typical applications include smart appliances, small motor controllers, security keypads, industrial sequencers, LED lighting controllers and low-cost data acquisition front ends. Its PLCC package is a strong argument for designs that expect manual soldering or socketed prototyping rather than fully automated SMT assembly. When designing around this device, remember that Flash EPROM programming requires a dedicated programmer, and that the 44-PLCC footprint is not the same as the 40-pin DIP variant of the same family. Confirm the pinout and package drawing from the manufacturer datasheet before laying out the board, and keep decoupling close to the supply pins.

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W79E217AFG

W79E217AFG - 8-bit 8051 MCU 64KB Flash 33MHz PQFP-100 | Nuvoton

The Nuvoton Technology Corporation W79E217AFG is an 8-bit 8051/8052-compatible microcontroller (MCU) with a redesigned processor core that eliminates wasted clock and memory cycles, delivering up to 33 MHz core frequency and integrating 64 KB (64K x 8) of on-chip Flash program memory. Housed in a 100-pin PQFP package, it operates from a single 5 V supply (with operating voltage range per datasheet) and is positioned as a drop-in upgrade for legacy 80C51/80C52 designs that need more code space, more I/O, and embedded Flash in-system programming (ISP). A microcontroller (MCU) is a single-chip computer containing a CPU core, program memory (ROM/Flash), data memory (RAM), and peripherals such as timers, UARTs, ADC, GPIO, and interrupt controllers. The 8051 family is the most widely deployed 8-bit MCU platform in history; it sits within the broader taxonomy: 8051 -> 8-bit MCU -> microcontroller -> embedded processor -> semiconductor. The W79E217AFG belongs to Nuvoton's W79 series of industrial-grade, Flash-based 8051 derivatives aimed at motor control, instrumentation, and human-machine interface (HMI) applications. Key features of the W79E217AFG include the 33 MHz single-cycle enhanced 8052 core, 64 KB Flash, 256 + 1 KB on-chip SRAM, four 8-bit I/O ports (P0-P3), three 16-bit timers, two full-duplex UARTs, an 8-channel 10-bit ADC, an on-chip oscillator, watchdog timer, power-on reset, and brown-out detector. Industrial temperature range (-40 °C to +85 °C), PQFP-100 package with 84 usable I/O lines, and ISP via UART make it well-suited for embedded designs. Architecturally, Nuvoton re-engineered the classic 8051 pipeline to remove the original 12-clock-per-machine-cycle penalty, allowing most instructions to complete in one clock. This typically yields 2x-3x throughput vs. legacy 80C51 at the same crystal frequency, while preserving binary compatibility with standard 8051 code, assemblers, and Keil C51 toolchains. The integrated 64 KB Flash also enables field updates without external EPROM. Typical applications include industrial motor drives, AC/DC inverter controls, induction cooker controllers, smart appliance HMI panels, security alarm panels, and other 8051-based legacy designs that need to migrate from ROM/EPROM to Flash. The wide operating temperature range and large PQFP package with abundant I/O make it appropriate for human-interface boards that drive LEDs, keypads, and character/graphic LCDs. When designing with this part, ensure your ISP tool is configured for the W79E217 family boot-loader entry mode and that decoupling is placed close to the analog AVSS/AVDD pins if the 10-bit ADC is used. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.

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W79E352AFG

W79E352AFG - 8-bit 8051 MCU, 24MHz, 8KB Flash, 44-QFP | Nuvoton

The Nuvoton W79E352AFG is an 8-bit 8051-family microcontroller core running up to 24 MHz, integrating 8 KB of on-chip Flash program memory and 256 bytes of SRAM, supplied in a 44-pin QFP package. It is built around an industry-standard 8051 instruction set, providing full compatibility with the MCS-51 toolchain, Keil C51, and SDCC while adding modern peripherals such as PWM, WDT, brown-out reset, low-voltage detect (LVD), and power-on reset. An 8-bit microcontroller (MCU) is a single-chip computer that integrates a CPU, program memory (ROM/Flash), data memory (RAM), and I/O peripherals into one package. The 8051 architecture, originally introduced by Intel in 1980 and now maintained by Nuvoton and others, sits within the broader hierarchy: microcontroller -> embedded processor -> digital IC -> semiconductor. The W79E352AFG belongs to Nuvoton's W79 series, optimized for cost-sensitive industrial control, home appliance, and motor drive front-ends. Key features of the W79E352AFG include up to 36 general-purpose I/O pins, multiple communication interfaces (EBI/EMI, I2C, UART/USART), four 16-bit timer/counters, hardware PWM channels, and an in-system programmable (ISP) Flash that enables firmware upgrades without removing the device from the board. Operating voltage spans 2.4 V to 5.5 V, supporting both 3.3 V and 5 V system designs with a single device. Technically, the part uses a single-cycle 8051 core that executes most instructions in 1 to 4 clocks (versus 12 in the original 8051), yielding roughly 4x to 12x higher effective MIPS than legacy designs. The integrated 4 KB auxiliary Flash area allows bootloader/ISP separation from the application code region. On-chip RC oscillator options reduce external BOM, and configurable GPIO drive strength simplifies interface to relays, MOSFETs, or 5 V peripheral logic. Typical applications include BLDC and stepper motor control (using the PWM and timer modules), home appliances (washing machines, induction cookers, microwave ovens), industrial control boards, low-end sensor hubs, and replacement of legacy 8051 designs where pin compatibility, code compatibility, and an upgrade path to ISP Flash are required. When designing in this part, reserve pin 30 (RST) for an external reset network and ensure the VDD-to-VSS decoupling is placed within 5 mm of the package. Designers moving from older Nuvoton N79E352ADG (44-DIP) parts can reuse existing firmware because the W79E352AFG shares the same SFR map. This page synthesizes distributor pricing, drop-in alternatives, package diagrams, and practical design notes that complement the official Nuvoton datasheet for engineers migrating legacy 8051 designs or evaluating the W79 series for new industrial and appliance projects.

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W79E8213AKG

W79E8213AKG - 8-bit 8051 MCU, 4KB Flash, 20MHz, 20-DIP | Nuvoton

The Nuvoton W79E8213AKG is an 8-bit 4T-8051 microcontroller with 4KB of in-system programmable Flash EPROM, executing one instruction per clock cycle at up to 20MHz and housed in a 20-pin PDIP (DIP-20) through-hole package. It provides 128 bytes of on-chip RAM, brown-out detection, and an integrated 4-channel 10-bit ADC, targeting cost-sensitive industrial and consumer control applications where a mature 8051 core simplifies firmware reuse. An 8-bit 8051 microcontroller is a small single-chip computer based on the original Intel MCS-51 architecture, combining an 8-bit CPU, program memory, data RAM, and peripherals on a single silicon die. The 8051 family is widely classified as an MCU (microcontroller unit) within the broader category of microcontrollers, embedded processors, and finally semiconductors. Nuvoton's W79 series extends the legacy 8051 footprint with modern process technology, larger Flash densities, and ICP (In-Circuit Programming) capability for field-reprogrammability without removing the part from the board. Key features include 4KB (4K x 8) Flash program memory that supports both hardware writer and ICP modes, 128 bytes of on-chip SRAM, an operating frequency up to 20MHz, internal watchdog timer and brown-out reset for robust field operation, and a 20-pin DIP form factor that fits legacy through-hole PCB designs. The device runs across the industrial -40C to +85C temperature range, supports standard 8051 peripherals (UART, timers, GPIO), and integrates an ADC for mixed-signal sensing. At the silicon level, the W79E8213 uses a 4T (four-clock-per-machine-cycle) 8051 core, providing single-cycle instruction execution that delivers up to four times the throughput of legacy 12T 8051 derivatives at the same clock rate. The mixed program/data Flash architecture is partitioned as 4KB code space at the base address, with hardware lock bits available to protect intellectual property against unauthorized readout. Power management includes idle and power-down modes that drop supply current to microampere levels for battery-backed installations. Typical applications include home appliance controls such as rice cookers and washing machines, white goods and HVAC blower control modules, battery chargers, LED lighting controllers, security keypads, and small-format industrial control boards. The DIP-20 package and 8051 instruction set also make the W79E8213AKG a drop-in upgrade for legacy 8051 designs that need more Flash without requiring PCB rework. When designing with the W79E8213AKG, provide a 0.1uF decoupling capacitor as close as possible to VDD and a bulk capacitor on the reset pin if external reset components are used. For ISP/ICP, three of the device's GPIO pins double as the programming interface and must not be permanently pulled to a logic level during the in-circuit programming sequence. Operating voltage is typically 5V with tolerance for 3V to 5.5V operation depending on frequency. This page synthesizes distributor stock levels, parametric alternatives, ICP programming notes, and 8051 architecture context that supplement the manufacturer datasheet and help engineers select the right drop-in replacement when the W79E8213AKG reaches end-of-life.

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W79E825AW

W79E825AW - 8-Bit MCU, 16KB ISP Flash, 18 I/O Ports | Nuvoton

The Nuvoton W79E825AW (formerly Winbond W79E825A family) is an 8-bit CMOS microcontroller built around a high-speed 4T (four-clock-per-instruction) core architecture, providing 16 KB of in-system programmable (ISP) Flash program memory, 256 bytes of on-chip RAM, and 256 bytes of data-flash NVM. The device integrates 18 multi-function I/O pins, two 16-bit timer/counters, 13 interrupt sources arranged in four priority levels, one Enhanced full-duplex UART, one I2C bus interface, a programmable Watchdog Timer, four channels of 10-bit PWM, and a 4-channel multiplexed 10-bit A/D converter. According to the manufacturer datasheet, the on-chip oscillator and clock circuitry eliminate the need for an external crystal on many designs, while a selectable instruction cycle architecture balances throughput and power consumption. The W79E825AW shares its fundamental die with the broader W79E82xA family, and is offered in the 'AW' suffix package code. A microcontroller (MCU) is a single-chip computer that integrates a CPU, non-volatile program memory, volatile RAM, and peripheral interfaces into one package; 8-bit MCUs such as the W79E825AW remain widely used in cost-sensitive embedded designs where the processing workload (sensing, key handling, simple state machines, motor pulse trains) fits comfortably within an 8-bit data path. Within the broader semiconductor taxonomy, an MCU belongs to the microcontrollers sub-category of Integrated Circuits, sitting above Logic ICs and beneath microprocessors in capability. The 4T core architecture positions the W79E825AW for one-instruction-per-four-clock operation, providing up to several MIPS per MHz depending on the selected clock source. Key features of the W79E825AW include ISP Flash that supports in-application firmware updates without removing the part from the board, a configurable 4-/2-channel 10-bit PWM block for motor or LED control, a 10-bit ADC that can be routed to multiple I/O pins, and a Brown-out / Watchdog combination for unsupervised recovery from power or code faults. The four-level interrupt controller lets time-critical events preempt background tasks, and the Enhanced UART supports 9-bit address-mode communications for RS-485 multi-drop networks. Typical applications include white-goods control boards, low-end motor drives, simple sensor hubs, IR remote transceivers, and consumer-electronic user-interface modules. The 18 I/O budget covers keypad scanning, LED driving, and small display interfaces without external expanders. When designing with this part, leave at least one UART accessible as a serial debug / ISP window and verify the ISP entry sequence against the In-System Programming section of the manufacturer datasheet to avoid lock-out conditions.

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W79E9781AKG

W79E9781AKG - 8-bit MCU 64KB Flash | Nuvoton | Industrial

The Nuvoton W79E9781AKG is an 8-bit Turbo 51-compatible microcontroller with 64 KB of in-system programmable Flash, 1.25 KB SRAM, and a wide operating voltage range, packaged in a 128-pin LQFP. It integrates a 10-bit ADC, four 16-bit timers, a watchdog timer, a full-duplex hardware UART, an I2C/SPI master interface, and a built-in brown-out detector for industrial-grade reliability. An 8-bit microcontroller (MCU) is a microprocessor-on-a-chip that integrates a CPU, program memory, data RAM, and peripherals into a single IC. The 8-bit architecture is optimized for cost-sensitive, low-power, deterministic control tasks; in the system hierarchy an MCU sits between discrete logic ICs and 32-bit microprocessors, providing firmware-driven I/O handling, sensor interfacing, and protocol conversion. Nuvoton's W79 family extends the legacy 8051 instruction set with Turbo-MCU enhancements, doubling the standard clock-per-instruction cycle for higher throughput at the same crystal frequency. Key features include 64 KB of in-system programmable (ISP) Flash allowing field firmware updates via UART, an operating voltage range of 2.4V to 5.5V that supports both 3.3V and 5V rails, and an industrial-grade operating temperature of -40C to +85C. The on-chip 10-bit ADC provides up to 8 analog input channels, while the four 16-bit timer/counters support PWM generation, capture, and event counting. A dedicated hardware watchdog and brown-out reset circuit protect against code lockup and unstable supplies. The W79E9781AKG uses the standard 8051 instruction set with Nuvoton Turbo-MCU extensions, allowing one machine cycle per clock rather than the original 12, while preserving binary compatibility with legacy 8051 firmware. The device's ISP mechanism boots from a ROM-resident bootloader that re-programs the Flash via the UART pins, eliminating external programming hardware during prototyping and field service. Typical applications include industrial control panels, home appliance main boards, motor control BLDC drivers, smart meter data concentrators, and point-of-sale terminals. The integrated ADC, timers, and UART let designers replace multiple discrete components with a single chip, shrinking BOM cost and PCB area. When designing with this device, plan ISP access by routing the UART pins to a header or optocoupler-isolated connector. Use the brown-out detector level matched to the lowest reliable rail voltage (typically 2.7V for 3.3V systems) to prevent Flash corruption during power-down events. This page consolidates distributor pricing, package-level drop-in alternatives, and engineering design notes that go beyond the manufacturer datasheet, supporting faster component selection and risk-aware substitution decisions.

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W83L951ADG

W83L951ADG - Mobile Keyboard Embedded Controller | Winbond

The Winbond W83L951ADG is a CMOS mobile keyboard and embedded controller fabricated in a 128-pin LQFP (PQFP128) surface-mount package, integrating an 8051-compatible microcontroller core with keyboard scanning, embedded controller, and system management functions for notebook and mobile computing platforms. It was originally produced by Winbond Electronics Corporation, whose embedded controller product line later transferred to Nuvoton Technology, which is why the same MPN appears under both Winbond and Nuvoton branding in distributor catalogs. An embedded controller (EC) is a specialized microcontroller in the power-management hierarchy of a computer system: it is a dedicated, always-on processor that supervises the keyboard matrix, power sequencing, battery charging supervision, thermal sensing, and low-level I/O even while the main CPU is asleep or off. In laptop and mobile designs the EC is the first silicon to wake and the last to sleep, making its firmware and electrical behavior critical to system reliability. Key features of the W83L951ADG include the 8051-derived instruction-set core with embedded firmware memory, an integrated keyboard controller (KBC) compatible with legacy PC/AT keyboard and PS/2 interfaces, general-purpose I/O for board-level control, and low-power CMOS operation suited to battery-powered systems. The device communicates with the host chipset over an LPC (Low Pin Count) style interface used in legacy EC architectures, allowing ACPI-compliant power management event handling. Architecturally, the part follows the classic Winbond/Nuvoton EC family: a single-chip design combining the CPU, program memory, RAM, keyboard matrix scanner, host interface, timers, and GPIO banks, minimizing external component count in dense mobile motherboards. The LQFP-128 package with 0.4 mm lead pitch provides the pin count needed for large keyboard matrix scanning plus numerous GPIO without a larger footprint. Typical applications include laptop and notebook keyboard controllers, embedded system management in x86 mobile platforms, tablet and portable device keyboard scanning, and industrial legacy designs that require PC/AT-compatible KBC functionality. Design consideration: because this device is long past active production, verify remaining authorized stock and confirm firmware compatibility before committing it to a new build; legacy designs should plan a migration path to current Nuvoton EC families. This page synthesizes distributor sourcing data, datasheet availability, drop-in variant information, and practical obsolescence guidance not consolidated in the manufacturer datasheet.

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W9425G6JH-5

W9425G6JH-5 - 256Mbit DDR400 SDRAM, 16Mx16, 2.5V TSOP-II | Winbond

The Winbond W9425G6JH-5 is a 256 Mbit DDR SDRAM organized as 4M x 4 banks x 16 bits, housed in a 66-pin TSOP-II surface-mount package and rated for DDR400/CL3 operation at 2.5V. The -5 speed grade delivers a peak data bandwidth of up to 400 Mwords per second under the JEDEC DDR-I specification, making it suitable for legacy embedded graphics, networking line cards, set-top boxes, and industrial controllers that required double-data-rate throughput in the mid-2000s. The device is fabricated in a CMOS process and includes on-chip refresh, burst counter, and self-refresh support. A DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both the rising and falling edges of the clock, effectively doubling the peak throughput of a single-data-rate SDRAM of the same bus frequency. DDR-I sits at the base of the DDR family hierarchy (DDR -> DDR SDRAM -> volatile memory -> DRAM -> semiconductor memory) and was standardized by JEDEC as the JESD79 specification family. Compared to its predecessor SDR SDRAM, DDR-I uses a 2n-prefetch architecture, SSTL-2 I/O, and requires a 2.5V supply for VDD plus a 2.5V supply for VDDQ. Key specifications of the W9425G6JH-5 include 4,194,304 words per bank across 4 banks, a 16-bit data bus width, a CAS Latency (CL) of 3 at DDR400, a 66-pin TSOP-II mechanical outline measuring 0.400 inch wide, and the -5I industrial temperature grade option that supports -40C to +85C. The chip operates from a single 2.5V VDD supply with a separate VDDQ rail terminated to VTT for the SSTL-2 interface. Internally, the device uses a 4-bank architecture with dual-bank operation and supports burst lengths of 2, 4, 8, and full page. The W9425G6JH-5 is constructed with a prefetch I/O scheme synchronized to the internal SDRAM clock, achieving DDR400 compliance when paired with a host controller that drives the SSTL-2 signaling at 200 MHz with 3n CBR. The 4-bank architecture allows interleaved operations across banks while one bank is being precharged, improving effective bandwidth in streaming workloads. Self-refresh mode permits low-power standby retention, making the device suitable for battery-backed or low-duty-cycle embedded systems. Typical applications for the W9425G6JH-5 include DDR1 main memory in industrial PCs, networking switches, digital video recorders, and printer controllers. The wide 16-bit bus simplifies interface to ASICs and low-cost processors without requiring multiple narrow-DRAM chips. Designers choose this Winbond part where Micron, Samsung, and Nanya equivalents are also qualified in 2018. When designing with the W9425G6JH-5, place VTT termination resistors within 1 inch of the DQ/DQS pins and follow JEDEC DDR-I routing guidelines. Decouple VDDQ with 0.1uF and 10uF capacitors near each pin and route DQS in matched-length pairs with the byte lane. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable single reference for sourcing and design-in of the W9425G6JH-5.

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W948D6FBHX5I

W948D6FBHX5I - 256Mb LPDDR SDRAM 200MHz | Winbond

The Winbond Electronics W948D6FBHX5I is a 256 Mbit Mobile Low-Power DDR (LPDDR / mobile DDR) SDRAM memory IC organized as 4M words x 4 banks x 16 bits, operating at up to 200 MHz with a 5 ns clock cycle, supplied in a 60-ball VFBGA (8x9 mm, 0.80 mm ball pitch) package. LPDDR SDRAM is a volatile DRAM variant optimized for battery-powered and thermally constrained systems. Unlike standard DDR DRAM, mobile LPDDR uses a 1.8 V core supply, deeper power-down modes, a temperature-compensated self-refresh (TCSR) feature, and partial-array self-refresh (PASR) to cut standby current. In the memory hierarchy it sits between SRAM and standard DDR SDRAM, forming the main-memory tier of embedded SoC platforms. Key features of the W948D6FBHX5I include the x16 parallel data interface, which reduces bus width and pin count versus x32 parts, a 200 MHz clock rate supporting LPDDR-200 throughput of 400 MB/s per pin pair, and the industrial temperature variant denoted by the I suffix in the ordering code. The VFBGA ball-grid package minimizes board area at 72 mm2 and improves signal integrity through short, controlled-impedance ball interconnects. Internally the device uses four independent banks with a burst length of 2, 4, or 8, allowing efficient random and sequential access. Power management modes include deep power-down, self-refresh, and power-down, with typical operating current in the tens of milliamp range and standby current in the microamp range when self-refresh is enabled. Typical applications include industrial HMI and gateways, portable medical instruments, telematics and tracking devices, and embedded Linux/RTOS systems where an application processor requires 32 MB of low-power main memory. When designing with this part, match the controller timing registers to the 5 ns cycle time and route the address/control bus as a matched-length fly-by or point-to-point group within the 1.8 V SSTL-18-style I/O regime; series termination is usually unnecessary at this speed for short traces. This page consolidates distributor availability, pricing tiers, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.

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W949D2DBJX5I

W949D2DBJX5I - 512Mb LPDDR SDRAM 200MHz x32 | Winbond

The Winbond Electronics W949D2DBJX5I is a 512Mbit Low Power DDR (LPDDR / Mobile DDR) SDRAM memory IC with a x32 data interface, 200 MHz clock rate (5 ns clock cycle), fabricated on a 46nm DRAM process and housed in a 90-ball VFBGA (8x13 mm) package, qualified for the industrial temperature range. An LPDDR SDRAM is a mobile-optimized variant of double-data-rate synchronous DRAM. Like all DRAM, it stores each bit as charge on a capacitor that must be periodically refreshed, but LPDDR devices reduce core and I/O operating voltage and add low-power modes such as Deep Power Down and Self Refresh so that battery-powered systems can keep volatile memory alive with minimal energy. In the memory hierarchy, the W949D2DBJX5I sits as main system memory, positioned between embedded SRAM caches and non-volatile flash storage. Key features include 512Mbit total density organized for a x32-wide parallel bus, a 200 MHz maximum clock frequency delivering effective double-data-rate transfers on both clock edges, and the space-saving 90-VFBGA 8x13 mm ball grid array that minimizes board area and improves signal integrity for high-speed memory routing. The I temperature suffix designates industrial-grade operating temperature support, and the 46nm process keeps core current low. Technically, the device uses double data rate signaling on the DQ pins, source-synchronous data strobes (DQS) for capture, and programmable mode registers for CAS latency, burst length and burst type configuration per the LPDDR (Mobile DDR) SDRAM standard. Bank and row/column addressing follow the standard LPDDR command set with ACTIVATE, READ, WRITE, PRECHARGE, REFRESH and mode register set commands. Typical applications include portable and industrial embedded systems: main memory for ARM-based application processors, networking and communication modules, telematics and data-loggers, and human-machine interface boards where 64 MByte of low-power DRAM is sufficient. Design consideration: LPDDR shares command/address lines among devices, so careful length-matched routing and proper termination of the 1.8 V-class signaling environment are essential; verify the controller supports the selected CAS latency and burst configuration before layout. This page synthesizes distributor pricing, drop-in family alternatives, pin-level guidance and practical design notes not consolidated in the manufacturer datasheet.

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W949D2DBJX5I-TR

W949D2DBJX5I-TR - 512Mb LPDDR SDRAM 200MHz x32 | Winbond

The Winbond Electronics W949D2DBJX5I-TR is a 512Mbit Mobile LPDDR SDRAM memory IC with a 32-bit parallel data interface, 200 MHz clock frequency, 5 ns access time, and a 90-ball VFBGA (8x13 mm) package, qualified for the -40C to +85C industrial temperature range. Mobile LPDDR SDRAM is a low-power variant of Double Data Rate synchronous DRAM optimized for battery-powered and thermally constrained systems. Within the memory hierarchy, SDRAM sits under the volatile RAM family, distinguished from asynchronous DRAM by a clocked interface and from standard DDR by reduced core voltage, lower I/O swing, and power-saving features such as deep power-down and temperature-compensated self-refresh. Key features include a 1.7 V to 1.95 V supply range (nominal 1.8 V), x32 organization at 512 Mbit density, a 200 MHz clock rate with 5 ns access time, and the compact 90-VFBGA footprint that minimizes PCB area in portable designs. The industrial temperature grade (-40C to +85C) extends usability from consumer handhelds into industrial and networking equipment. Fabricated on a 46 nm DRAM process, the device achieves a favorable balance of density, power and cost. The double-data-rate interface transfers data on both clock edges, doubling effective bandwidth relative to SDR SDRAM at the same clock. Standard LPDDR command set support (CKE-based power-down, self-refresh, mode register programming) allows straightforward controller integration with common SoCs and application processors. Typical applications include embedded industrial controllers, networking and communication equipment, telematics and navigation boxes, portable instrumentation, and battery-buffered data loggers where 64 MByte of low-power program/data memory is sufficient. Designers should observe LPDDR signal integrity requirements: length-match the differential clock to address/command traces, terminate per the datasheet guidelines, and provide a clean 1.8 V core rail with adequate decoupling at each VDD/VDDQ pin pair of the BGA array. This page synthesizes distributor pricing, family alternatives, and practical LPDDR layout guidance not consolidated in the manufacturer datasheet alone. Specifications above are drawn from verified distributor listings (DigiKey, Mouser, JLCPCB) as of 2026-09-14.

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W971GG6JB-25I

W971GG6JB-25I - 1Gb DDR2 SDRAM, 800MHz, Industrial | Winbond

The Winbond W971GG6JB-25I is a 1 Gbit DDR2 SDRAM organized as 8M words x 8 banks x 16 bits, housed in an 84-ball WBGA package (8 x 12.5 mm). The -25I speed grade supports a clock frequency of 400 MHz (DDR2-800) with data rates up to 800 Mb/s/pin, while the underlying die family extends to DDR2-1066 for higher-grade speed bins. A DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM) is a volatile dynamic random-access memory that transfers data on both clock edges, doubling the effective bus rate versus DDR1. It belongs to the hierarchy SDRAM -> DRAM -> volatile memory -> semiconductor, and is widely used as main working memory in embedded systems, set-top boxes, networking equipment, automotive infotainment, and graphics subsystems. The 'I' suffix indicates the industrial temperature grade (-40 C to +85 C). Key features of the W971GG6JB-25I include 1.8 V SSTL_18 compatible I/O, on-die termination (ODT), programmable CAS latency (typically 5/6 for DDR2-800), and a 4-bit prefetch architecture. The device supports burst lengths of 4 and 8, on-die DLL for clock alignment, and selectable read/write termination strengths. The WBGA-84 package is JEDEC standard for DDR2 x16 devices, enabling drop-in compatibility with other vendors' x16 DDR2 SDRAMs of the same density and speed grade. Architecturally, the W971GG6JB uses 8 internal banks to enable concurrent row activation across banks, hiding precharge and activate latencies. The -25I bin is qualified for industrial operation and is suitable for automotive non-safety applications where AEC-Q100 is not mandated. The 'A' and 'K' suffixes in the family target full automotive AEC-Q100 qualification. Typical applications include automotive infotainment head units, industrial HMI panels, IPTV/set-top box main memory, networking line cards, and printer image buffers. It is also used in point-of-sale terminals and ruggedized industrial PCs that require a robust, JEDEC-standard DDR2 footprint. When designing with this device, follow the JEDEC DDR2 layout guidelines: maintain matched-length trace pairs for DQ/DQS, place VTT termination at the middle of the bus, and provide proper decoupling (typically 0.1 uF plus bulk) near each VDD/VSS ball. A 50 ohm impedance for SSTL_18 signaling is recommended. This page synthesizes distributor pricing, same-family DDR2 alternatives, and JEDEC-compliant layout notes not consolidated in the manufacturer datasheet.

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W971GG6NB-6

W971GG6NB-6 - 1Gb DDR2-667 SDRAM x16 84-TFBGA | Winbond

The Winbond W971GG6NB-6 is a 1Gbit DDR2 SDRAM organized as 8M x 8 banks x 16 bits per chip, operating at a 667 Mbps data rate (DDR2-667) in a compact 84-ball TFBGA (8x12.5 mm) package. It is the -6 speed-grade variant of the W971GG6NB family and is sorted into multiple grade parts including -18, 18I, 18J, -25, 25I, 25J and -3, where the -18/18I/18J grades are compliant to the DDR2-1066 (6-6-6) specification and the -25/25I/25J grades target the DDR2-800 specification. A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate) while operating from a 1.8V SSTL_18 interface. It belongs to the broader DRAM family (SDRAM -> DDR -> DDR2) and is positioned between DDR and DDR3 in the JEDEC memory hierarchy, offering higher bandwidth than DDR while consuming lower power than DDR3 thanks to the 1.8V supply rail. Key features of the W971GG6NB-6 include 8 internal banks for concurrent operations, on-chip termination (Dynamic ODT), auto precharge, data mask (DM) function for write masking, and programmable CAS latency. The chip is supplied from a single 1.8V power rail with a separate 1.8V VDDQ for the DQ bus and supports self-refresh and power-down modes for low standby power. The 84-ball TFBGA package provides a small footprint suitable for high-density designs. The W971GG6NB-6 architecture uses a double data rate interface that prefetches 4n-bit per I/O per clock cycle, doubling effective throughput without raising the core clock. Programmable impedance matching, calibrated on-die termination, and write leveling simplify board-level signal integrity at the 667 Mbps operating point, making the part straightforward to integrate on standard JEDEC-compliant DDR2 controllers. Typical applications include set-top boxes, networking equipment, LCD TVs, industrial PCs, printers, and embedded systems that need a cost-effective 1Gbit x16 DDR2 memory. The 84-ball TFBGA footprint and JEDEC-standard command set also allow it to be used as a boot RAM or working memory on SoCs that integrate DDR2 controllers. When designing with this device, follow JEDEC DDR2 PCB layout rules: maintain 50 ohm single-ended impedance on the DQ/strobe traces, route DQS and CLK with controlled length matching, and provide a clean 1.8V supply with bulk decoupling near each chip. Note that the -6 grade targets DDR2-667 timing; if your design needs higher bandwidth, consider the -18 or -25 grade parts in the same family. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for evaluating W971GG6NB-6 in cost-sensitive DDR2 designs.

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W971GG6SB25I

W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA

The Winbond W971GG6SB25I is a 1Gbit DDR2 SDRAM organized as 8M words × 8 banks × 16 bits, housed in an 84-ball TFBGA / WBGA (8.0 × 12.5 mm) package. The “25I” speed grade corresponds to a 400 MT/s (DDR2-800) command rate with a 200 MHz clock and approximately 57.5 ns random access time. It is the industrial-temperature grade variant of the W971GG6SB family, qualified from -40 °C to +85 °C. The 1.8 V nominal VDD/V_DDQ makes it the standard JEDEC-compliant DDR2 device for embedded and consumer platforms where density, cost, and the DDR2 pinout footprint must all be satisfied. A DDR2 SDRAM is the second-generation Double Data Rate Synchronous DRAM technology standardized by JEDEC. JEDEC defined DDR2 to quadruple the minimum prefetch width from 2n to 4n (4-bit I/O per clock edge) over DDR, allowing lower clock frequencies at the same data rate, an on-die termination (ODT) scheme for signal integrity, and stricter voltage and timing budgets. Operationally, DDR2 sits between DDR1 and DDR3 in the SDRAM evolution and uses SSTL-18 I/O, a 1.8 V supply, and a separate write-termination concept. The hypernym chain for this part is therefore: DDR2 SDRAM → SDRAM → DRAM → volatile memory → memory IC → semiconductor. Key features of the W971GG6SB25I include: 1 Gbit density at 200 MHz / 400 MT/s (DDR2-800 6-6-6 timing); industrial temperature range of -40 °C to +85 °C for rugged and outdoor use; a 16-bit data bus width to maximize throughput per access; on-die termination (ODT) and a calibrated impedance matching to simplify the PCB layout; an 84-ball TFBGA / WBGA surface-mount package measuring 8 × 12.5 mm, suitable for compact notebooks, set-top boxes, and industrial boards; and synchronous pipelined architecture with auto-refresh and self-refresh capability for low-power standby. Internally, the W971GG6SB25I uses a 4-bit prefetch architecture with 8 banks. The dual-bank operation combined with the 4n prefetch lowers power consumption and signal-edge demand on the bus, while the multi-bank structure enables concurrent operations (activate one bank while reading another) for high throughput. Backward compatibility with the standard DDR2 command set is preserved, simplifying integration with CPUs, SoCs, and FPGAs that already expose a DDR2 controller. Typical applications for the W971GG6SB25I include: industrial control boards needing an operating range down to -40 °C; network routers, switches, and home gateways that need 1 Gbit on a 16-bit bus; set-top boxes, IPTV, and digital video recorders; automotive telematics and infotainment sub-systems (where a full AEC-Q100 part is not required); and embedded computing platforms built around x86, ARM, or MIPS SoCs that expose a DDR2 controller. Design considerations: a 1.8 V low-noise regulator with ±5% tolerance is required; PCB trace lengths must be matched per byte group (tolerances of ≤ 25 ps typically) and the ODT calibrated to the chosen drive strength; decoupling must use 100 nF + 1 µF + 10 µF capacitor combinations at each VDD/V_DDQ ball pair. This page synthesizes Winbond datasheet data, distributor pricing, cross-reference alternatives, and practical layout notes not found together in any single source.

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W972GG6KB-25

W972GG6KB-25 - 2Gb DDR2-800 SDRAM x16 84-WBGA | Winbond

The Winbond W972GG6KB-25 is a 2-Gbit (128M x 16) DDR2 SDRAM organized as 134,217,728 words x 16 bits x 4 banks, supplied in an 84-ball WBGA (8x12.5 mm) package and operating from a single 1.8 V supply. The -25 speed grade corresponds to a tCK of 2.5 ns, equivalent to DDR2-800 (400 MHz data rate, 800 MT/s), with a row access time (tRAC) of 57.5 ns. It supports SSTL_18 stub-series-terminated logic, on-die termination (ODT), and auto-precharge with data-mask and dynamic-ODT features. DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM) is a synchronous volatile memory class that transfers data on both clock edges and uses a 1.8 V supply to halve the power of first-generation DDR. In the wider system hierarchy it sits between DDR1 and DDR3, in the taxonomy: SDRAM -> DDR SDRAM -> DDR2 SDRAM -> DRAM -> volatile memory IC. Its JEDEC-defined features (posted CAS, OCD calibration, off-chip driver strength adjustment) make it a workhorse for embedded networking, imaging, and consumer designs that need >400 MT/s bandwidth without migrating to DDR3 footprints. Key features include four internal banks, programmable CAS Latency (3, 4, 5, 6), programmable burst length (4 or 8 with sequential or interleave modes), differential clock inputs (CK, /CK), and a 2-bit refresh control (1x or 4x). The 84-WBGA ballout follows JEDEC standard for x16 DDR2 and is pin-compatible with industry-standard 2-Gbit DDR2 SDRAMs, simplifying second-source qualification. Industrial temperature option (-25I) is available down to -40 C. Typical applications include 720p/1080p video buffering in IP cameras and DVRs, frame buffers in industrial HMI panels, networking line cards requiring 800 MT/s bandwidth, and digital photo frames or set-top box main memory. The combination of x16 width and 1.8 V operation matches legacy DDR2 host controllers without level shifting. When designing with the W972GG6KB-25, follow JEDEC DDR2 PCB layout rules: matched-length CK//CK traces within 5 mils, 50 ohm controlled impedance, VTT termination at 0.9 V via 4.7 uF decoupling, and VREF generation at 0.9 V with 1% tolerance. Decoupling requires 0.1 uF plus 4.7 uF per pin group. This page synthesizes Winbond datasheet parameters, distributor pricing, drop-in equivalents, and PCB layout considerations not consolidated on a single OEM page.

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W9751G6KB-25

W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond

The Winbond W9751G6KB-25 is a 512-Mbit Double Data Rate 2 (DDR2) Synchronous DRAM organized as 32M words by 16 bits, supplied in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA / WBGA) measuring 8 x 12.5 mm. The -25 speed grade delivers a clock rate of 400 MHz (DDR2-800), a 57.5 ns CAS latency timing window at full speed, and a 1.8 V typical operating supply, making it a compact, low-power volatile memory solution for embedded computing platforms. A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary. Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation. The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches. When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver. This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.

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W9751G6KB-25-TR

W9751G6KB-25-TR - 512Mb DDR2 SDRAM x16 84-WBGA | Winbond

The Winbond W9751G6KB-25-TR is a 512 Mbit (32M x 16) Double Data Rate 2 (DDR2) Synchronous DRAM organized as 8M words x 4 banks x 16 bits, housed in an 84-ball WBGA (8 x 12.5 mm) package supplied on tape and reel. It supports a 400 MHz DDR2-800 data rate, equivalent to 57.5 ns clock cycle time, and operates from a 1.7 V to 1.9 V supply with a commercial 0 C to 85 C temperature range. The device uses SSTL_18-compatible stub-series terminated logic I/O to deliver 800 MT/s peak transfer per pin. A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers two data words per clock cycle on both rising and falling edges, doubling peak throughput compared with DDR1 at the same clock rate. DDR2 sits in the SDRAM hierarchy between DDR1 and DDR3, with lower power (1.8 V VDD), higher prefetch (4n), and on-die termination that improves signal integrity on densely routed DIMM or SoC fly-by topologies. It is the standard commodity DRAM of the late-2000s era and remains widely second-sourced today for industrial, set-top, networking, and embedded designs. Key features of the W9751G6KB-25-TR include a 16-bit-wide data interface, 4-bank architecture supporting concurrent operations, programmable CAS Latency (CL), Additive Latency (AL), and Write Latency (WL) to ease controller timing closure, and on-die termination (ODT) for signal-integrity tuning. The 84-WBGA package with 8 x 12.5 mm outline offers a compact footprint for space-constrained boards, while the industrial-commercial temperature window covers most non-automotive embedded environments. The device integrates Winbond's standard DDR2 mode-register set, refresh logic, and self-refresh / power-down modes for low standby current. Programmable burst lengths of 4 and 8 plus burst-chop and burst-interrupt sequences allow efficient DDR2 controller interfacing. The 25 in the part number (W9751G6KB-25) corresponds to the -25 speed grade (CL5 equivalent), supporting 400 MHz operation. Typical applications include IPTV/set-top box main memory buffering, low-end networking line cards, industrial HMI panels, surveillance DVR frame buffers, and consumer-electronics motherboards that still support DDR2 memory. The 512 Mbit density slots in where 64 MB of working memory is needed without the cost of 1 Gb densities. When designing with this part, observe the JEDEC DDR2 fly-by topology recommendations: route command/address/control/clock in a daisy-chain from the controller to the DRAM, place VREF and VTT termination as recommended, and provide a 100 nF plus bulk decoupling near each VDD/VSS pair. This page synthesizes current distributor pricing, drop-in equivalents from Winbond and competitor sources, and practical PCB-layout notes not aggregated on any single manufacturer or distributor page.

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W9751G6NB-25

W9751G6NB-25 - 512Mb DDR2-800 SDRAM x16 | Winbond

The Winbond Electronics W9751G6NB-25 is a 512 Mbit DDR2 SDRAM memory IC organized as 8,388,608 words x 4 banks x 16 bits (32M x 16), operating at a 400 MHz clock with DDR2-800 data rates and a 57.5 ns access time, housed in an 84-ball VFBGA (8 x 12.5 mm) package. DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of volatile semiconductor memory that transfers data on both the rising and falling edges of the clock signal, doubling effective bandwidth compared to single data rate SDRAM. Within the memory hierarchy, DDR2 SDRAM sits below DDR3 and DDR4 in performance but remains widely used in cost-sensitive embedded systems. The broader taxonomy runs: DDR2 SDRAM -> SDRAM -> DRAM -> semiconductor memory -> memory IC. Key features of the W9751G6NB-25 include an auto precharge function for simplified memory controller operation, a data mask (DM) function for selective byte writes, and dynamic on-chip termination (ODT) that improves signal integrity at high data rates by terminating the bus at the die rather than on the motherboard. These on-die features reduce external component count and strengthen signal integrity in dense PCB layouts. Technically, the device achieves transfer rates up to DDR2-800 with the -25 speed grade suffix, operating from a 1.8 V supply per the DDR2 JEDEC standard. Winbond sorts the W9751G6NB family into speed grades -18, -25, and -3 (with I and J industrial variants), allowing designers to scale performance within an identical footprint. The 84-ball VFBGA ball map follows the standard DDR2 x16 JEDEC footprint, ensuring controller and PCB compatibility across the family. Typical applications include embedded computing boards, industrial PCs, networking equipment, set-top boxes, and legacy desktop/laptop memory module repair where DDR2 is still required. The x16 organization suits low-cost controllers with narrower 16-bit buses, and its proven presence in systems such as the Dell Latitude D630 demonstrates field reliability. A key design consideration: DDR2 termination must follow the dynamic ODT settings in the Winbond datasheet, and VREF rails require clean, low-noise routing for timing margins to hold across the full 0 to 85 C commercial temperature range. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

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W9812G6KH-6

W9812G6KH-6 - 128Mb SDRAM x16 166MHz 54-TSOP II | Winbond

The Winbond W9812G6KH-6 is a 128 Mbit synchronous DRAM (SDRAM) organized as 2M words x 4 banks x 16 bits, housed in a 54-pin TSOP II package with a 166 MHz clock rate and LVTTL interface. It delivers up to 200 M words per second of data bandwidth through a single 16-bit I/O bus running at a 5 ns cycle time, making it a mainstream density for embedded SDRAM sockets. A Synchronous DRAM (SDRAM) is a dynamic random-access memory that synchronizes its operation with an external clock, enabling pipelined, multi-bank burst access. Within the broader memory hierarchy, SDRAM sits between asynchronous DRAM and modern DDR/DDR2/3/4 SDRAM. This 128 Mb density represents the high end of single-chip SDRAM and is widely used in legacy MCUs, SoCs, FPGA soft-processors and consumer ASICs that integrate an SDRAM controller but no DDR PHY. The "-6" speed grade corresponds to a 166 MHz / 200 Mbps/pin class device. Key features include four internal banks for concurrent operation, programmable CAS Latency of 2 or 3, a 64 ms refresh interval (8 K cycles), and 3.3 V single-supply operation with LVTTL-compatible I/O. The 54-pin TSOP II footprint is the industry-standard JEDEC pinout for 16-bit SDRAMs, ensuring socket compatibility with second-source parts. The device supports sequential, interleaved and burst-terminate burst modes, and offers low-power features including Power-Down and Self-Refresh modes. The W9812G6KH-6 is fabricated on a CMOS process and is built around four banks of 2M x 16 cells, each with a sense-amplifier and row/column decoder pipeline. The 5 ns clock-to-access time at 166 MHz matches PC133 SDRAM timing, and the device is fully synchronous to the positive edge of the system clock. The interface uses a single 16-bit DQ bus shared by all banks, with separate DQM byte-mask controls to enable byte-write operations. Typical applications include set-top boxes, network printers, IP cameras, point-of-sale terminals, and industrial HMI panels. It also serves as main memory for mid-range MCUs such as the Winbond W90N745, NXP i.MX family, and various FPGAs with embedded SDR controllers. The wide ecosystem of compatible second-source parts makes it a low-risk design choice. When designing with the W9812G6KH-6, observe the JEDEC SDRAM 16-bit TSOP II routing topology - keep DQ/DQS/CLK traces matched within the prescribed skew window and provide a low-impedance VDD/SS plane beneath the package. Decoupling should use 0.1 uF ceramics at every VDD/VSS pair. Termination is generally not required for clock rates up to 166 MHz when traces are kept short. This page synthesizes distributor pricing from DigiKey, Mouser, LCSC and Octopart, drop-in alternatives from the Winbond W9812G6KH speed-grade family, and cross-vendor pin-compatible replacements from the JEDEC 128 Mb x16 SDRAM category - data not aggregated in any single manufacturer datasheet.

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W9812G6KH-6-TR

W9812G6KH-6-TR - 128Mb SDR SDRAM 166MHz LVTTL 54-TSOP II | Winbond

The Winbond W9812G6KH-6-TR is a 128 Mbit synchronous dynamic random access memory (SDRAM) device organized as 2M words × 4 banks × 16 bits (8M × 16), supplied in a 54-pin TSOP II package and operating from a 3.3 V LVTTL interface at a clock frequency of 166 MHz with a 5 ns access time. It conforms to the JEDEC standard for 128 Mb SDRAM and supports sequential and interleaved burst modes of 1, 2, 4, 8, or full page. A SDR SDRAM (synchronous DRAM) is a volatile memory technology that synchronizes all read/write operations to a system clock, in contrast to older asynchronous DRAM. It belongs to the SDRAM family within the broader DRAM hierarchy, itself a category of volatile random-access memory used as main working memory and frame buffers. SDR SDRAM preceded DDR, DDR2, DDR3 and subsequent double-data-rate generations and remains in legacy industrial, automotive infotainment, set-top box, printer, and embedded designs where interface compatibility and low cost outweigh bandwidth demands. Key features include self-refresh mode for low-power standby, power-down mode, programmable CAS latency of 2 or 3, auto precharge and auto refresh, and a deep power-down option. The device supports LVTTL inputs and is fully synchronous with positive-edge clocked control. Operating current is approximately 130 mA (active) and self-refresh current is typically under 1 mA, making it suitable for battery-backed or energy-conscious designs. Architecturally, the W9812G6KH-6-TR combines four internal banks that can operate independently, allowing concurrent row activation across banks for improved throughput at high command rates. Each bank contains 2M words of 16-bit cells; the chip therefore presents an 8M × 16 logical organization. Programmable mode register settings control burst length, burst type, CAS latency and write mode. Typical applications include industrial control mainboards, legacy PC graphics frame buffers, network routers, set-top boxes, printers, scanners, digital still cameras, and embedded Linux boards using SDRAM-equipped SoCs. The wide operating temperature and stable supply tolerance make it especially attractive for long-life industrial designs. Designers should pay attention to PCB trace length matching of the clock, DQ, DQS and command/address groups. Improper impedance control on a 54-TSOP II footprint can introduce access-time violations at 166 MHz; reference Winbond application guidance for 50 Ω single-ended traces. This page synthesizes current distributor pricing for the W9812G6KH-6-TR, lists pin-compatible same-brand and cross-brand drop-in alternatives (W9812G6JH-6, W9812G6KH-6I, IS42S16160B, MT48LC8M16A2) and provides design notes that complement the official Winbond datasheet.

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W9812G6KH-6I TR

W9812G6KH-6I TR - 128Mb SDRAM 166MHz 3.3V | Winbond

The Winbond Electronics W9812G6KH-6I TR is a 128Mbit synchronous dynamic random access memory (SDRAM) organized as 2M words x 4 banks x 16 bits, operating at up to 166 MHz with a 3.3V LVTTL interface in a 54-pin TSOP-II package, supplied on tape and reel for automated assembly. An SDRAM is a type of DRAM that synchronizes all address, data, and control signals to a system clock, allowing pipelined burst accesses at the clock edge. Within the memory hierarchy, SDRAM sits above asynchronous DRAM (FPM/EDO) and below DDR generations, and remains the standard volatile memory choice for microcontroller, DSP, and FPGA systems that lack DDR controllers. The W9812G6KH family belongs to the broader DRAM and volatile memory IC category. Key features include a 166 MHz clock rate at CL3 (-6I speed grade), a data bandwidth of up to 200M words per second, four internal banks with interleaved operation to hide precharge and row-to-row delays, and programmable CAS latency and burst lengths (1, 2, 4, 8, or full page). The industrial temperature rating (-40C to +85C) makes the -6I grade suitable for harsh environments. Technically, the device uses a synchronous interface with row and bank activation commands, auto-refresh and self-refresh modes, and auto/precharge options per the standard SDRAM command set. Power is supplied at a nominal 3.3V with LVTTL logic levels, and clock-enable (CKE) support allows power-down for reduced standby current. Typical applications include embedded controller buffering, network equipment line-card memory, industrial HMI frame buffers, and FPGA-based data acquisition systems where an SDR SDRAM controller is already implemented. A key design consideration is refresh budgeting: allocate tRFC and 4096 refresh cycles per 64 ms into your controller scheduling, and terminate clock and address lines appropriately at 166 MHz to maintain signal integrity on a 54-pin TSOP-II footprint. This page synthesizes distributor pricing, drop-in alternatives across Winbond and ISSI, and practical design notes not found in the manufacturer datasheet.

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W9816G6JH-6

W9816G6JH-6 - 16Mb SDR SDRAM, 166 MHz, TSOP-50 | Winbond

The Winbond W9816G6JH-6 is a 16 Mbit synchronous DRAM (SDRAM) organized as 512K words x 2 banks x 16 bits, operating at a clock frequency of 166 MHz with a 5 ns column access time in a 50-pin TSOP II package. The W9816G6JH-6 is the speed grade -6 variant in a family that includes -5, -6, -6I (industrial temperature), -7, and -7I variants, delivering up to 200M words per second of data bandwidth per the Winbond datasheet. An SDR SDRAM is a synchronous dynamic random-access memory that uses a single-ended clock to synchronize command, address, and data transfers on a rising edge. SDRAM sits in the memory hierarchy between asynchronous SRAM (lowest density, no refresh, simpler) and later-generation DDR SDRAM (higher bandwidth via double data rate and on-die termination). It belongs to the broader category of volatile memory ICs, where each bit is stored on a capacitor-refreshed cell. The W9816G6JH-6 features a 16-bit data bus, two internal banks for interleaved operation, and a synchronous interface driven by CLK, CKE, /RAS, /CAS, /WE, /CS, and DQML/DQMH byte-mask lines. Self-refresh and power-down modes are supported for low standby power, and the device operates from a 3.3 V supply typical for SDR SDRAM. The 50-TSOP II package (10.16 mm body width) is the JEDEC standard form factor for SDR SDRAM, enabling direct drop-in replacement in legacy embedded designs. Typical applications include embedded Linux/MCU systems requiring bulk volatile memory (set-top boxes, industrial controllers, printers, automotive infotainment of its era), legacy networking equipment with 16-bit external memory buses, and graphic LCD frame buffers. The 5 ns access time makes it suitable for ARM7/ARM9-class processors and older MIPS cores that interface to SDRAM at 100-166 MHz. The two-bank architecture supports interleaved row activation that reduces precharge latency in streaming workloads. When designing with this part, observe JEDEC standard PCB layout rules for TSOP-50: keep data, address, and clock traces matched within ±25 ps, maintain a continuous ground plane beneath the package, and use VSS/VCCQ decoupling capacitors within 5 mm of the supply pins. Because this is a 3.3 V parallel SDRAM, confirm that the host controller's external memory interface supports the LVTTL levels used by the W9816G6JH-6 before layout commit. The W9816G6JH-6I variant adds industrial temperature range (-40C to +85C) for harsh environments. This page synthesizes cross-reference candidates, parametric comparisons, and design notes from the Winbond datasheet and distributor listings that are not aggregated on a single product page elsewhere.

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W9825G6KH-6

W9825G6KH-6 - 256Mb 166MHz SDR SDRAM | Winbond | 54-TSOP II

The Winbond Electronics W9825G6KH-6 is a 256Mbit (16M x 16) Synchronous DRAM (SDRAM) memory IC operating at 3.3V with a clock speed of 166 MHz in a 54-pin TSOP II surface-mount package. The -6 speed grade delivers a data bandwidth of up to 200M words per second, making it one of the most widely used external RAM devices in cost-sensitive embedded systems. SDRAM (Synchronous Dynamic Random Access Memory) is a class of DRAM synchronized to the system clock, allowing a memory controller to execute commands - activate, read, write, precharge - on defined clock edges rather than asynchronously. Within the memory hierarchy, SDRAM sits between on-chip SRAM caches and non-volatile storage such as NOR/NAND flash, providing megabytes of fast working memory for processors that lack sufficient internal RAM. Key features of the W9825G6KH include a x16 organization (16,777,216 words x 16 bits), four internal banks with burst lengths of 1, 2, 4, 8, or full-page, and programmable CAS latency. The device complies with the personal computer industrial standard for SDRAM and is sorted into speed grades -5, -5I, -6, -6I, -6J, -6L, -75, 75J and 75L per the Winbond datasheet, so the -6 grade designates the commercial-temperature 166 MHz version. Technically, the W9825G6KH uses a four-bank architecture with row and column addressing (12 row address lines, 8 column address lines for x16), bank activate/read/write/precharge commands, and auto-refresh with self-refresh entry for low-power standby. Two DQM (data mask) pins enable byte-lane masking on the 16-bit bus, and mode register programming selects burst length, burst type, and CAS latency. Typical applications include external memory expansion for STM32, NXP i.MX RT, and other MCUs/MPUs with SDRAM controllers, industrial HMI display frame buffers, network appliance buffers, and data acquisition buffering. Its 3.3V interface and standard TSOP II footprint keep board-level integration simple. Design consideration: maintain proper signal integrity by keeping clock, DQM, and address traces length-matched, and implement the full auto-refresh schedule required by the controller to prevent data loss. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

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W79E352AFG - 8-bit 8051 MCU, 24MHz, 8KB Flash, 44-QFP | Nuvoton

W79E8213AKG - 8-bit 8051 MCU, 4KB Flash, 20MHz, 20-DIP | Nuvoton

W79E825AW - 8-Bit MCU, 16KB ISP Flash, 18 I/O Ports | Nuvoton

W79E9781AKG - 8-bit MCU 64KB Flash | Nuvoton | Industrial

W83L951ADG - Mobile Keyboard Embedded Controller | Winbond

W9425G6JH-5 - 256Mbit DDR400 SDRAM, 16Mx16, 2.5V TSOP-II | Winbond

W948D6FBHX5I - 256Mb LPDDR SDRAM 200MHz | Winbond

W949D2DBJX5I - 512Mb LPDDR SDRAM 200MHz x32 | Winbond

W949D2DBJX5I-TR - 512Mb LPDDR SDRAM 200MHz x32 | Winbond

W971GG6JB-25I - 1Gb DDR2 SDRAM, 800MHz, Industrial | Winbond

W971GG6NB-6 - 1Gb DDR2-667 SDRAM x16 84-TFBGA | Winbond

W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA

W972GG6KB-25 - 2Gb DDR2-800 SDRAM x16 84-WBGA | Winbond

W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond

W9751G6KB-25-TR - 512Mb DDR2 SDRAM x16 84-WBGA | Winbond

W9751G6NB-25 - 512Mb DDR2-800 SDRAM x16 | Winbond

W9812G6KH-6 - 128Mb SDRAM x16 166MHz 54-TSOP II | Winbond

W9812G6KH-6-TR - 128Mb SDR SDRAM 166MHz LVTTL 54-TSOP II | Winbond

W9812G6KH-6I TR - 128Mb SDRAM 166MHz 3.3V | Winbond

W9816G6JH-6 - 16Mb SDR SDRAM, 166 MHz, TSOP-50 | Winbond

W9825G6KH-6 - 256Mb 166MHz SDR SDRAM | Winbond | 54-TSOP II