EP3SE50F780C3N - Stratix III E FPGA, 47.5K LE, 780-FBGA | Intel
Teilenummer: EP3SE50F780C3N ✗ Abgekündigt| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1104.8 | $1.104,80 |
| 10 | $994.32 | $9.943,20 |
| 100 | $883.84 | $88.384,00 |
| 500 | $795.46 | $397.730,00 |
| 1.000 | $717.12 | $717.120,00 |
EP3SE50F780C3N Übersicht
What is an FPGA? A Field-Programmable Gate Array is a semiconductor IC containing an array of configurable logic blocks (CLBs), programmable interconnects, and hardened IP such as DSP slices, block RAM (BRAM), and high-speed transceivers. FPGAs occupy a position in the programmable logic hierarchy between general-purpose microcontrollers (fixed instruction set, low power) and ASICs (custom silicon, high NRE). Stratix III E sits in Intel's high-performance FPGA family, optimized for signal processing and high-bandwidth I/O.
Key features include 1900 Logic Array Blocks (LABs), 432 DSP blocks for fixed- and floating-point arithmetic, 312 embedded 9-Kbit M9K memory blocks, and an aggregate embedded memory of 5.76 Mbits. Per the Intel Stratix III Device Handbook, the EP3SE50F780C3N supports 4 PLLs and 488 maximum user I/Os with LVDS, LVTTL, LVCMOS, and SSTL I/O standards. The C3 speed grade and -3 (typical) commercial temperature grade (0C to +85C) are encoded in the suffix.
Architecturally, Stratix III E uses an adaptive logic module (ALM) fabric that packs eight inputs into a lookup-table-based structure, achieving higher effective density than older 4-input LUT architectures. The device integrates hard memory controllers (DDR/DDR2/QDRII), PCIe hard IP blocks, and up to 8.5 Gbps transceivers on selected variants, reducing soft-logic overhead.
Typical applications include high-end wireless baseband processing, digital video broadcast equipment, radar signal processing, medical imaging accelerators, and ASIC emulation platforms. The large logic capacity and rich DSP resources make the EP3SE50F780C3N well-suited for FFT pipelines, channelizers, and FEC encoders.
When designing with this device, plan for a multi-rail power supply (typically 1.1 V VCC, 2.5 V VCCAUX, and per-bank VCCIO) and ensure thermal management can dissipate the 8-12 W typical operating power. Always use the Quartus II design suite (version 13.1 or earlier) - later Quartus releases dropped Stratix III support.
This page synthesizes distributor pricing, drop-in same-package alternatives from the Stratix III E family, and practical design notes not consolidated in the manufacturer datasheet.
Drop-in-Alternativen für EP3SE50F780C3N – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit EP3SE50F780C3N (gleiche Bauform und Footprint) – abweichend in Package, Speed Grade, Family, Embedded Memory, Operating Temperature.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
EP3SE50F780C3
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$890 / Stück
Datenblatt ansehen →EP3SE50F780C3G
✅ Drop-In✓ Auf Lager
$1030 / Stück
Datenblatt ansehen →EP3SE50F780C2N
✅ Drop-In✓ Auf Lager
$278.9 / Stück
Datenblatt ansehen →EP3SE50F780C4N
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1430 / Stück
Datenblatt ansehen →EP3SE50F780I3N
✅ Drop-In✓ Auf Lager
$1550 / Stück
Datenblatt ansehen →EP3SE110F780C3N
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1245 / Stück
Datenblatt ansehen →EP3SL50F780C3N
✅ Drop-In✓ Auf Lager
$555 / Stück
Datenblatt ansehen →EP3SE50F780C3N Grenzwerte & elektrische Eigenschaften
| Family | Stratix III E |
| Logic Elements | 47,500 |
| Logic Array Blocks (LABs) | 1,900 |
| Embedded Memory (M9K blocks) | 312 |
| Total Embedded Memory | 5,760 Kbit (5.76 Mbit) |
| DSP Blocks | 432 |
| Maximum User I/Os | 488 |
| Number of PLLs | 4 |
| Process Technology | 65 nm |
| Core Voltage | 1.1 V |
| Speed Grade | C3 (medium) |
| Temperature Grade | Commercial (0C to +85C) |
| Gehäuse | 780-ball FC-FBGA |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
EP3SE50F780C3N 780-ball fc-fbga Pinbelegungsleitfaden
Pinbelegung für EP3SE50F780C3N (780-ball fc-fbga-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für EP3SE50F780C3N.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
EP3SE50F780C3N ist geeignet für 6 Anwendungs: Wireless Baseband Signal Processing, Digital Video Broadcasting and Image Processing, Radar Signal Processing, ASIC Prototyping and Emulation, Medical Imaging Accelerator, Industrial Test and Measurement Equipment.
Wireless Baseband Signal Processing
The EP3SE50F780C3N's 432 DSP blocks and 5.76 Mbit embedded memory make it ideal for wireless baseband DSP pipelines including FFT/iFFT, channel estimation, and FEC decoding. Its 47,500 LEs support complete PHY-layer implementations for LTE and WiMAX, while the 488 user I/Os provide sufficient interface bandwidth for radio front-end converters. The C3 speed grade enables real-time processing at 100+ MHz system frequency for 20 MHz LTE channels.
Empfohlen
Digital Video Broadcasting and Image Processing
The EP3SE50F780C3N delivers sufficient DSP throughput and logic density for DVB-T/H encoders, H.264 transcoders, and real-time image processing pipelines. Its M9K memory blocks support line buffers for video processing, and the 432 DSP slices accelerate motion estimation and DCT/iDCT transforms. The 488 I/Os enable direct connection to DDR2 memory controllers for frame buffering without external glue logic.
Empfohlen
Radar Signal Processing
For phased-array radar and SAR processing, the EP3SE50F780C3N provides the DSP density and memory bandwidth needed for pulse compression, MTI filtering, and CFAR detection. The 5.76 Mbit embedded memory holds range-Doppler maps for synthetic aperture radar, while the 432 DSP blocks perform real-time FFT and matrix operations. Per the Stratix III Device Handbook, the ALM fabric supports efficient mapping of radar DSP kernels.
Empfohlen
ASIC Prototyping and Emulation
With 47,500 logic elements and 488 user I/Os, the EP3SE50F780C3N is widely deployed in ASIC prototyping platforms. Quartus II synthesis flows support fast RTL mapping, and the 5.76 Mbit embedded memory models ASIC SRAM blocks. The 780-FBGA package supports high-speed signal integrity for prototype validation, while the Stratix III E ALM fabric efficiently maps complex ASIC designs at 100+ MHz prototype speeds.
Empfohlen
Medical Imaging Accelerator
The EP3SE50F780C3N's DSP-rich architecture accelerates CT and MRI image reconstruction algorithms including back-projection, filtered back-projection (FBP), and iterative reconstruction. Its 432 DSP blocks deliver the multiply-accumulate throughput required for real-time 3D reconstruction, while the 5.76 Mbit embedded memory holds projection data. The commercial temperature grade suits controlled clinical environments with stable ambient conditions.
Empfohlen
Industrial Test and Measurement Equipment
The EP3SE50F780C3N powers high-end oscilloscopes, logic analyzers, and protocol testers where real-time signal processing and complex triggering are required. Its 432 DSP blocks accelerate FFT-based spectrum analysis, while the 488 user I/Os handle multi-channel data acquisition. Per Intel documentation, the Stratix III E delivers deterministic timing suitable for real-time test instrumentation applications.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für EP3SE50F780C3N – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | EP3SE50F780C3G | EP3SE50F780C2N | EP3SE50F780I3N | EP3SE110F780C3N | EP3SL50F780C3N |
|---|---|---|---|---|---|---|
| Brand | Intel | Intel | Intel | Intel | Intel | Intel |
| Package | 780-ball FC-FBGA | 780-ball FC-FBGA | 780-ball FC-FBGA | 780-ball FC-FBGA | 780-ball FC-FBGA | 780-ball FC-FBGA |
| Logic Elements | 47,500 | 47,500 | 47,500 | 47,500 | 107,500 | 47,500 |
| Speed Grade | C3 | C3 | C2 (slower) | I3 (industrial) | C3 | C3 |
| Temperature Grade | Commercial (0C to +85C) | Commercial | Commercial | Industrial (-40C to +100C) | Commercial | Commercial |
| Process / Family | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III L (low-power) |
Wichtigste Unterscheidungsmerkmale
- Highest DSP density in the Stratix III E mid-range (vs. EP3SL50F780C3N)
- Lead-free RoHS-compliant variant available in same footprint (vs. EP3SE50F780C3 (non-leaded))
- Industrial temperature variant available (vs. EP3SE50F780C2N (commercial only))
- Higher-density upgrade path in same package (vs. EP3SE50F780C4N (same density, faster speed))
Designhinweise
The EP3SE50F780C3N requires four power rails: VCCINT (1.1 V core), VCCAUX (2.5 V), VCCPD (3.3 V for pre-driver), and per-bank VCCIO. Per the Stratix III Device Handbook, typical operating power is 8-12 W depending on toggle rate and DSP utilization. Use a multi-phase buck regulator with at least 6 A capability on VCCINT, and place decoupling capacitors (10 uF bulk + 0.1 uF high-frequency) within 2mm of every power ball. Estimated: junction-to-ambient thermal resistance for the 780-FBGA package is approximately 18-22 C/W on a standard 4-layer PCB.
At typical 10 W dissipation on the 780-FBGA package with theta_JA of approximately 20 C/W, junction temperature rises about 200C above ambient (estimated for a 4-layer JEDEC test board). For commercial-grade operation, ambient must stay below 65C. Consider a heatsink or forced-air cooling for high-utilization designs (DSP-heavy FFT pipelines can hit 15 W). Stratix III includes on-die temperature sensing diodes readable via JTAG for thermal profiling.
The 780-ball FC-FBGA uses 1.0 mm ball pitch and demands 4+ layer PCB stackup with microvia (HDI) construction. Route differential pairs (LVDS, transceiver channels) with 100 ohm differential impedance and matched lengths within 20 mil. Per Intel AN 461, decouple every VCCIO bank with 0.1 uF + 10 uF capacitors placed as close as possible to the package. Use ground stitching vias every 200 mil along signal traces for return path continuity.
Stratix III is supported only in Quartus II version 13.1 or earlier - later Quartus releases (14.0+) dropped Stratix III device support. Firmware recompilation is required when migrating between speed grades (C2 vs C3 vs C4) even though pinout is identical. Always check the silicon revision (top-mark) when sourcing from distributors, as earlier revisions may have errata documented in the Stratix III Device Handbook errata sheet.
LVDS and SSTL signals on the EP3SE50F780C3N require series termination matching the line impedance (typically 50 ohm for SSTL, 100 ohm differential for LVDS). Per Intel AN 224, keep critical clock and global signal traces on inner layers with adjacent ground planes for controlled impedance. Configure I/O standards in Quartus II pin planner before layout to generate accurate IBIS models for signal integrity simulation.
Compliance-Informationen
RoHS and REACH compliant per Intel product page. N suffix denotes lead-free packaging. Not AEC-Q100 qualified - choose industrial-temp variant for harsh environments.