Controladores de MOSFET de potencia
Productos (714)
VNQ500PEPTR-E - 4-Ch High-Side 36V Driver | STMicroelectronics
The STMicroelectronics VNQ500PEPTR-E is a quad-channel high-side MOSFET power switch driver built on the company's VIPower M0-3 smart-power process, housed in a 12-pin PowerSSO-12 (PowerLSOP with exposed pad) package. It is rated for a 5.5 V to 36 V supply input range, delivers up to 400 mA continuous current per channel (0.9 A peak per Arrow listing), and integrates a 0.5 ohm typical on-resistance (Ron) per output. A high-side driver (also known as a high-side switch) is a power-distribution topology in which the load is connected between the switch output and ground, while the switch sits between the positive supply rail and the load. This contrasts with low-side switching, which returns the load to the positive rail and switches the ground return. High-side switching is preferred wherever the load must remain at a defined ground potential (for safety, EMI, or fault-detection reasons) and is the canonical building block of automotive body modules, industrial PLCs, and USB/eFuse power rails. Key feature highlights include four independently controlled outputs, internal current-limit and thermal-shutdown protection, very low quiescent current in standby, and CMOS/TTL-compatible logic inputs. Each output is protected against overload, short-circuit, and ESD events per AEC-Q100 stress profiles. According to the STMicroelectronics VNQ500 product page, the part is designed for "driving any kind of load with one side connected to ground," which captures the broad applicability of the device across resistive, inductive, and capacitive loads. Typical applications include automotive body-control modules (lighting, door locks, mirror heaters), industrial PLC and sensor-driver stages, USB port power switching, relay replacement, and any system that requires multiple protected 12 V/24 V loads on one PCB. With 36 V load-dump tolerance, the device is well-suited to 12 V automotive rails that routinely see transient overvoltage events. When designing with this device, ensure the PCB thermal layout uses the exposed pad (EP) as the primary heat-dissipation path. For >200 mA continuous outputs, a copper-pour area of at least 1 square inch under the EP is recommended, since Ron losses scale with I² and rise rapidly above 300 mA per channel.
VNQ5050AKTR - 13A High-Side Driver | STMicroelectronics | Automotive
The VNQ5050AKTR is a monolithic high-side driver from STMicroelectronics, designed for automotive and industrial applications requiring robust power switching. It integrates a 13A (typical) high-side switch with an embedded N-channel power MOSFET, providing protection against overcurrent, overtemperature, and short-circuit conditions. The device operates from a supply voltage range of 4.5V to 36V, making it suitable for 12V and 24V automotive systems. It is housed in a PowerSSO-36 package, which offers excellent thermal performance and is optimized for surface-mount assembly. A high-side driver is a power management IC that connects a load to the positive supply rail, enabling safe and controlled switching of inductive, resistive, or capacitive loads. In automotive systems, high-side drivers are essential for driving lamps, solenoids, relays, and motors, providing diagnostic feedback and protection features that enhance system reliability. The VNQ5050AKTR belongs to the VIPower M0-5 family, which is known for its advanced protection and diagnostic capabilities. Key features of the VNQ5050AKTR include a very low ON-state resistance (RDS(on)) of 50 mOhm typical, which minimizes power dissipation and supports high current handling. It offers a wide operating voltage range, a standby current of only 5 uA, and a comprehensive set of protection features including load current limitation, thermal shutdown with auto-restart, and loss of ground protection. The device also provides a status output for diagnostic feedback, enabling real-time monitoring of load conditions. From a technical perspective, the VNQ5050AKTR utilizes ST's VIPower M0-5 technology, which integrates the power MOSFET with control and protection circuitry on a single chip. This integration reduces external component count and improves system reliability. The device supports PWM control up to 1 kHz, allowing for dimming or proportional control of loads. Its thermal shutdown feature protects the device and load from overtemperature conditions, while the current limitation prevents damage from short circuits. Typical applications include automotive lighting (headlamps, tail lamps, interior lights), resistive and inductive loads such as relays and solenoids, and motor control in body control modules. The device's robust protection and diagnostic features make it ideal for safety-critical automotive systems. In industrial settings, it can be used for PLC outputs, factory automation, and general-purpose power switching. When designing with the VNQ5050AKTR, ensure adequate PCB copper area for thermal dissipation, especially when driving high currents. The exposed pad on the PowerSSO-36 package should be connected to a large ground plane to improve thermal performance. Additionally, place a suitable capacitor close to the VCC pin to suppress voltage transients and ensure stable operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the STMicroelectronics datasheet, providing engineers with a comprehensive resource for selecting and implementing the VNQ5050AKTR.
VNQ5050KTR-E - 13A Quad High-Side Driver | ST | Automotive
The STMicroelectronics VNQ5050KTR-E is a monolithic quad-channel high-side driver delivering up to 13A per channel in a PowerSSO-24 exposed-pad package, designed for automotive and industrial loads. It operates across a 4.5V to 36V supply range with 3.0V CMOS-compatible logic inputs, integrating four N-channel power MOSFETs with vertical current-flow structures on a single die. A high-side driver is a power switch that connects a load to the positive supply rail rather than to ground, providing protection, diagnostics, and PWM capability. In the taxonomy of semiconductor switches, this places it under power MOSFET drivers -> smart power switches -> power management ICs -> semiconductor. High-side configuration is preferred in automotive body electronics because it allows the load to be referenced to chassis ground, simplifying wiring and enabling direct short-to-ground detection. Key features include a typical 13.5A per-channel current limit, 0.5 µA standby current for battery-saving key-off operation, very fast demagnetization of inductive loads via integrated freewheeling, and on-state / off-state open-load detection. The device also includes reverse-battery protection, loss-of-ground protection, overload protection with active power limitation, and thermal shutdown. The status flag pin multiplexes diagnostic information back to the host MCU. Built on ST's VIPower M0-5 technology, the VNQ5050KTR-E combines vertical power MOSFETs with bipolar/CMOS/DMOS control and protection circuitry monolithically. The embedded charge pump drives the gate above VCC, supporting 100% duty-cycle operation at low battery voltages. The architecture is engineered for harsh automotive environments including load-dump transients (tested per ISO 7637) and jump-start conditions. Typical applications include automotive lighting (headlamps, tail lamps, turn signals), body control modules driving solenoids and DC motors, and industrial programmable logic controllers switching relays. The quadruple channel fits the four-lamp-per-rear-lamp-cluster topology used widely in passenger cars. The exposed thermal pad of the PowerSSO-24 package must be soldered to a substantial PCB copper area to maintain junction temperature under full-load conditions, especially when all four channels are active simultaneously.
VNQ5160KTR-E - Quad High-Side Driver, 16A, 36V | STMicroelectronics
The STMicroelectronics VNQ5160KTR-E is a monolithic quad high-side driver designed for automotive and industrial resistive, inductive, and capacitive loads. It integrates four independent high-side switches with a 16A maximum output current per channel and an operating voltage range of 4.5V to 36V. The device is housed in a PowerSSO-24 package, providing a compact solution for multi-channel load switching. A high-side driver is a power management IC that connects a load to the positive supply rail, providing protection and diagnostic functions. In automotive systems, high-side drivers are essential for controlling lamps, solenoids, motors, and heaters while offering short-circuit, over-temperature, and load-dump protection. The VNQ5160KTR-E belongs to the VIPower M0-5 family, which is known for its robustness and advanced protection features. Key features include a very low standby current of 0.5 uA, making it suitable for battery-powered applications. Each channel has an open-load detection, over-temperature shutdown with auto-restart, and a current-limited output. The device also provides a status output for diagnostic feedback, enabling microcontroller-based fault monitoring. The PowerSSO-24 package offers excellent thermal performance with a thermal resistance of 40 C/W, allowing high current operation without external heatsinking in many applications. The VNQ5160KTR-E uses a vertical P-channel MOSFET technology, which eliminates the need for a charge pump, reducing system complexity. The device is AEC-Q100 qualified, ensuring reliability in harsh automotive environments. Its 16A output capability and 36V maximum supply voltage make it suitable for driving high-power loads such as headlamps, DC motors, and heating elements. Typical applications include automotive body control modules, lighting control, motor control, and industrial PLC output stages. The device's built-in protection features reduce the need for external components, simplifying PCB design and improving system reliability. When designing with this device, ensure adequate PCB copper area for thermal dissipation, especially when driving multiple channels at high current. The status output should be connected to a microcontroller input for fault monitoring, and the input pins should be protected with series resistors to limit inrush current.
VNQ6004SA-E - Quad High-Side Driver, 4x 60mOhm | STMicroelectronics
The STMicroelectronics VNQ6004SA-E is a monolithic quad-channel high-side driver designed for automotive and industrial resistive, inductive, and capacitive loads. It integrates four 60 mOhm (typical) high-side switches with full protection and diagnostic features in a 24-pin PowerSSO-24 package. The device operates from a 4.5V to 36V supply voltage, making it suitable for 12V and 24V automotive systems. Each channel can deliver up to 8A of output current (limited by package thermal constraints), with a typical on-state resistance of 60 mOhm at 25°C. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. It is a key component in automotive body control modules, industrial PLCs, and smart power distribution systems. The VNQ6004SA-E belongs to the VIPower M0-5 family, which integrates power MOSFETs with control logic and protection circuits on a single chip, reducing external component count and improving reliability. Key features include overcurrent protection with programmable current limitation, thermal shutdown with automatic restart, undervoltage and overvoltage lockout, and open-load detection in both on and off states. The device also provides a status feedback pin for each channel, enabling real-time diagnostics. The PowerSSO-24 package offers excellent thermal performance with an exposed pad, allowing efficient heat dissipation in high-current applications. The VNQ6004SA-E uses ST's VIPower M0-5 technology, which combines a vertical power MOSFET with CMOS control logic. This architecture provides low on-resistance, fast switching, and robust protection. The device is AEC-Q100 qualified, ensuring reliability in harsh automotive environments. It also complies with RoHS and REACH directives, making it suitable for global markets. Typical applications include automotive body control modules (lighting, wipers, heaters), industrial PLC output stages, and smart power distribution in trucks and buses. The wide input voltage range and robust protection make it ideal for driving lamps, solenoids, relays, and DC motors. In automotive lighting, the VNQ6004SA-E can drive LED modules with PWM dimming, while its diagnostic features enable fault detection in safety-critical systems. When designing with this device, ensure adequate PCB copper area for thermal management, especially when driving high currents. The exposed pad must be soldered to a thermal via array to maximize heat dissipation. Also, consider the inrush current of capacitive loads and set the current limit accordingly to avoid false triggering.
VNQ6008SA-E - 8-Channel High-Side Driver | STMicroelectronics
The VNQ6008SA-E is a monolithic 8-channel high-side driver from STMicroelectronics, designed for automotive and industrial resistive, inductive, and capacitive loads. It integrates eight power MOSFETs with a 60V breakdown voltage and a typical on-state resistance of 60 mΩ per channel, enabling efficient switching of loads up to 1A per channel. The device is housed in a PowerSSO-36 package, providing a compact solution for multi-channel switching applications. A high-side driver is a type of power switch that connects a load to the positive supply rail, providing protection and diagnostic features. In automotive systems, high-side drivers are essential for controlling lamps, relays, solenoids, and other actuators while offering short-circuit, over-temperature, and over-voltage protection. The VNQ6008SA-E belongs to the VIPower M0-5 family, which is known for its robustness and advanced protection features. Key features of the VNQ6008SA-E include an 8-bit serial peripheral interface (SPI) for control and diagnostics, a 60V operating voltage range, and a low quiescent current of 5 µA in standby mode. Each channel has independent over-current, over-temperature, and open-load detection, with a diagnostic output that can be read via SPI. The device also features a dedicated current sense output for analog load monitoring, enabling precise current measurement without additional components. The VNQ6008SA-E utilizes ST's VIPower M0-5 technology, which combines vertical current flow with a smart power IC architecture. This technology provides high current density, low on-resistance, and fast switching, while integrating protection and diagnostic circuits on the same die. The device is AEC-Q100 qualified, making it suitable for automotive applications, and is RoHS compliant. Typical applications include automotive body control modules, lighting control (LED and incandescent lamps), relay and solenoid drivers, and industrial PLC output stages. The SPI interface allows for easy integration with microcontrollers, enabling real-time diagnostics and fault management. The device's ability to drive both resistive and inductive loads makes it versatile for various switching tasks. When designing with the VNQ6008SA-E, ensure proper thermal management by providing adequate copper area on the PCB for heat dissipation. The PowerSSO-36 package has a thermal resistance of 35 °C/W, so for high-current applications, consider the power dissipation and ambient temperature. Additionally, use appropriate decoupling capacitors on the supply and logic pins to minimize noise and ensure reliable operation.
VNQ660SP - 6A Quad High-Side Solid State Relay, PowerSO-10 | STMicroelectronics
The STMicroelectronics VNQ660SP is a monolithic quad-channel high-side solid state relay built on ST's VIPower M0-3 technology, delivering 6 A continuous current per channel in a 10-pin PowerSO-10 package. Each of the four independent N-channel MOSFET outputs exhibits a typical RDS(on) of 50 mΩ and is rated for a supply voltage (VCC) up to 36 V, with CMOS-compatible logic inputs driving the gates directly. A high-side solid state relay (also called a high-side driver or smart power switch) is an integrated power switch that sits between the supply rail and the load. Unlike a low-side switch that returns current to ground, a high-side switch delivers battery or bus voltage to the load, providing short-to-ground protection and removing the need for chassis-ground returns. Within the broader power semiconductor hierarchy, the VNQ660SP belongs to: smart power switch -> high-side driver -> power management IC -> semiconductor. The device integrates comprehensive protection features per channel, including off-state open-load detection, undervoltage and overvoltage shutdown, overvoltage clamping (active avalanche), thermal shutdown with auto-recovery, and current limitation. These diagnostics make it suitable for safety-critical automotive body electronics, where the part must survive load-dump transients and harsh wiring faults without external fuses. Architecturally, the VNQ660SP uses four independent vertical DMOS power stages with charge-pump gate drives that are powered from VCC. The charge pump keeps the gate enhanced at low VCC and during PWM operation, while the diagnostic block monitors load current and supply conditions to feed back to the microcontroller. The PowerSO-10 package exposes a metal pad that drops thermal resistance to a typical 1.5 °C/W, allowing the four channels to share heat dissipation when not all outputs are loaded simultaneously. Typical applications include automotive body control modules (BCM), door lock and window lift drivers, seat and mirror controllers, LED lighting modules, and industrial 24 V solenoid/valve banks. The combination of four channels, 6 A per channel, and integrated diagnostics is especially attractive in BCMs where PCB area is constrained and harness simplification matters. When designing with the VNQ660SP, derate per-channel current when more than two channels are conducting concurrently and follow PowerSO-10 land-pattern guidelines with thermal vias under the exposed pad. Always observe the maximum VCC of 36 V and add an external TVS if the upstream supply can produce larger transients. This page consolidates distributor pricing, true drop-in alternatives, and practical design notes that are not found in the manufacturer datasheet, giving engineers a single source for sourcing, replacement, and layout decisions on the VNQ660SP.
VNQ660SP-E - 36V Quad High-Side Solid State Relay | STMicroelectronics
The STMicroelectronics VNQ660SP-E is a quad-channel high-side solid-state relay built on VIPower M0-3 technology, delivering 6 A continuous output per channel in a 10-pin PowerSO exposed-pad package. It is designed for driving resistive or inductive loads with one side connected to ground, integrating four independent high-side switches with CMOS-compatible inputs. A high-side switch (also called a high-side driver or solid-state relay) is a semiconductor switch placed between the supply rail and the load, sourcing current rather than sinking it. Unlike a low-side switch (placed between the load and ground), a high-side topology allows ground-referenced loads, simplifies fault detection, and eliminates the need for chassis grounding. High-side drivers belong to the broader power-switch IC family within power-management semiconductors, commonly used in automotive body electronics, industrial automation, and programmable logic controllers. Key features of the VNQ660SP-E include a 6 V to 36 V supply range, 40 mOhm on-state resistance per channel, 6 A continuous current rating, CMOS-compatible logic inputs, off-state open-load detection, undervoltage and overvoltage shutdown, overvoltage clamp, thermal shutdown, and current limitation. The exposed bottom pad of the PowerSO-10 package provides a low thermal resistance path, allowing reliable operation at high ambient conditions. Architecturally, the VNQ660SP-E uses STMicroelectronics' proprietary VIPower M0-3 process, which co-integrates vertical power MOSFETs with CMOS control logic on a single die. This monolithic integration enables compact PCB designs while delivering built-in protection features typically requiring external circuitry in discrete solutions. The device also includes diagnostic feedback and protection functions that meet automotive-grade reliability expectations. Typical applications include automotive body control modules, lighting drivers, solenoid and relay drivers, industrial PLC outputs, and home appliance controls. Its quad-channel configuration suits multi-load systems requiring independent switching of lamps, motors, valves, and resistive heaters from a single MCU. When designing with this device, calculate power dissipation as P_D = I^2 x R_DS(on) per channel and ensure the exposed pad receives adequate copper area for thermal management. The off-state open-load detection requires specific load impedance thresholds; review the datasheet carefully when driving LED or low-current loads. This page synthesizes distributor pricing, drop-in alternatives in the same PowerSO-10 footprint, and practical design notes for fault-protected high-side switching - information not found in the manufacturer datasheet alone.
VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics
The STMicroelectronics VNQ660SPTR-E is a quad-channel monolithic high-side solid-state relay built on ST's VIPower M0-3 technology, delivering four independent 6A switches in a 10-pin PowerSO exposed-bottom-pad package. It targets 6V to 36V supply operation with a typical on-state resistance of 40 mOhm per channel, and integrates CMOS-compatible inputs plus load-dump-safe protection including overvoltage clamp, undervoltage shutdown, overvoltage shutdown, open-load detection in the off state, thermal shutdown, and reverse-battery protection through the exposed thermal pad. A high-side smart power switch is an integrated semiconductor relay that sits between a positive supply rail and a load (typically a resistive or inductive load referenced to ground). Within the broader power-management hierarchy, it belongs to the voltage-protection and distribution family - one level above simple power MOSFETs, equivalent in function to an electromechanical relay but with diagnostic feedback, faster switching, and no moving contacts. Quad-channel parts combine four independent switches and their protection logic into one package, reducing PCB area in body-control modules where multiple bulbs, solenoids, or motor winders share a common positive feed. The VNQ660SPTR-E distinguishes itself with very low quiescent current draw in standby, integrated charge pump for true high-side drive (no bootstrap capacitor required), and an analog status flag that reflects fault conditions per channel. According to the ST datasheet VNQ660SP family document, the device is rated for a maximum on-state resistance of 40 mOhm at 25C on each of its four channels, with continuous per-channel current up to 6A when properly heat-sunk through the PowerSO exposed pad. The architecture is built on a vertical double-diffused MOS process, which yields low RDS(on) and high avalanche ruggedness for switching of inductive loads such as automotive lamps and solenoids. Typical applications include automotive body-control modules for driving lamps, motors, and solenoids; industrial PLC digital output cards; multi-channel relay replacement in HVAC and appliance controls; and any 12V/24V system where a logic-level signal must switch high-current loads without a discrete MOSFET+freewheel-diode+resistor network. Power dissipation is dominated by I-squared-R across the FET, so a 6A continuous load per channel demands a substantial copper area bonded to the exposed bottom pad. When designing with this part, never float the input pins: tie unused inputs through a 10k resistor to logic high so the corresponding output stays off. Also verify that the supply decoupling capacitor is rated for the load-dump transient expected in automotive environments - a 100V-rated 100nF X7R ceramic directly from VCC to GND close to the IC pins is a typical datasheet recommendation. This page synthesizes distributor pricing snapshots, a curated set of pin-compatible drop-in alternates, recommended companion parts, and practical design notes - data not assembled on a single manufacturer or distributor page - to help engineers compare options quickly and avoid the most common VNQ660SPTR-E integration mistakes.
VNQ7004AYTR - Quad High-Side Driver, 4x 70mOhm | STMicroelectronics
The STMicroelectronics VNQ7004AYTR is a monolithic quad-channel high-side driver designed for automotive and industrial resistive, inductive, and capacitive loads. It integrates four 70 mOhm (typical) high-side switches with full protection and diagnostic features in a 28-pin PowerSSO-28 package. The device operates from a 4V to 28V supply voltage, making it suitable for 12V and 24V automotive systems. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. It sits between the microcontroller and the load, translating low-voltage logic signals into high-current switching actions. In the power management hierarchy, a high-side driver is a type of power switch, which falls under power management ICs, which are part of the broader semiconductor category. This device integrates four such drivers in a single package, reducing board space and component count. Key features include a very low standby current of 0.5 uA (typical) for battery preservation, a wide operating voltage range of 4V to 28V, and a maximum output current of 7A per channel (limited by package thermal capability). Each channel has overcurrent, overtemperature, and short-circuit protection, with a diagnostic output that reports fault conditions via a current-sense or digital feedback pin. The device is AEC-Q100 qualified, ensuring reliability for automotive applications. The VNQ7004AYTR uses a vertical power MOSFET technology with an integrated charge pump for the high-side gate drive. This architecture allows for efficient switching with a typical on-resistance of 70 mOhm per channel, minimizing power dissipation. The device also features a dedicated current-sense output that can be used for load current monitoring, enabling precise control and fault detection in applications such as lighting, motors, and solenoids. Typical applications include automotive body control modules, interior and exterior lighting, DC motor control, and industrial PLC outputs. The device's ability to drive inductive loads with built-in freewheeling protection makes it ideal for relay and solenoid replacement. Its diagnostic capabilities allow for real-time load monitoring, improving system reliability and enabling predictive maintenance. When designing with this device, ensure adequate PCB copper area for thermal dissipation, as the PowerSSO-28 package relies on the exposed pad for heat transfer. The current-sense output should be connected to an ADC input for accurate load monitoring, and the enable pins should be controlled by the microcontroller with proper pull-down resistors to avoid unintended activation during power-up.
VNQ7008AYTR - 8-Channel High-Side Driver | STMicroelectronics
The VNQ7008AYTR is an 8-channel high-side driver from STMicroelectronics, designed for automotive and industrial applications requiring robust, protected power switching. It integrates eight power MOSFETs with advanced protection features, delivering up to 0.7 A per channel (total 5.6 A) in a compact PowerSSO-36 package. The device operates from a 4.5 V to 28 V supply, making it suitable for 12 V and 24 V systems. A high-side driver is a power management IC that switches power to a load connected to ground, providing a simple and safe interface between a microcontroller and high-current loads. It integrates the power transistor, protection circuitry, and diagnostic feedback, reducing external component count and PCB area. High-side drivers are essential in automotive body control modules, industrial PLCs, and smart lighting systems where reliable, protected switching is critical. Key features of the VNQ7008AYTR include a low quiescent current of 5 µA in standby mode, a maximum standby current of 5 µA, and a wide operating temperature range from -40°C to +150°C. Each channel has independent overcurrent, overtemperature, and short-circuit protection, with a diagnostic output for fault reporting. The device also features a 16-bit SPI interface for advanced control and diagnostics, enabling real-time monitoring of load status and fault conditions. The VNQ7008AYTR uses STMicroelectronics' VIPower M0-5 technology, which integrates the power stages with CMOS control logic on a single die. This architecture provides low on-resistance (typically 0.7 Ω per channel) and fast switching, minimizing power dissipation and enabling high-frequency PWM control. The PowerSSO-36 package offers excellent thermal performance with a thermal resistance of 40 °C/W, allowing operation at high ambient temperatures without external heatsinking. Typical applications include automotive body control modules (lighting, wipers, mirrors), industrial PLC output stages, and smart home automation systems. The SPI interface allows a microcontroller to configure each channel, read diagnostic data, and implement advanced load management strategies, making it ideal for distributed intelligence in vehicles and industrial equipment. When designing with the VNQ7008AYTR, ensure adequate PCB copper area for thermal dissipation, especially when driving multiple channels at high current. The SPI interface requires careful layout to minimize noise, and the supply voltage must be decoupled with a 100 nF ceramic capacitor close to the VCC pin. The device's protection features eliminate the need for external clamping diodes, simplifying the BOM and improving reliability.
VNQ7050AJTR - 40V 40mOhm Quad High-Side Driver | STMicroelectronics
The VNQ7050AJTR is a quad-channel high-side driver from STMicroelectronics, designed for automotive and industrial applications requiring robust, protected power switching. It integrates four independent high-side switches with a 40V maximum supply voltage and a typical on-state resistance of 40mOhm per channel, capable of delivering up to 9A per channel. The device is housed in a PowerSSO-16 package, offering a compact footprint for space-constrained PCB designs. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. In automotive systems, high-side drivers are essential for controlling lamps, solenoids, motors, and resistive loads, replacing discrete MOSFETs and relays with a single integrated solution. The VNQ7050AJTR belongs to the VIPower M0-5 family, which is part of STMicroelectronics' extensive portfolio of smart power switches designed for harsh environments. Key features of the VNQ7050AJTR include undervoltage shutdown, overvoltage clamp, load current limitation, thermal shutdown with auto-restart, and a dedicated status output for fault detection. Each channel has an open-drain diagnostic pin that reports overcurrent, overtemperature, and other fault conditions. The device also features a very low standby current of 0.5uA, making it suitable for battery-powered applications where quiescent draw is critical. The VNQ7050AJTR uses ST's proprietary VIPower M0-5 technology, which integrates a vertical MOSFET with intelligent control circuitry on a single chip. This architecture provides fast switching, low conduction losses, and robust protection against short circuits and thermal overload. The device is AEC-Q100 qualified, ensuring reliability for automotive applications, and is RoHS compliant. Typical applications include automotive body control modules, lighting control (LED and incandescent), DC motor control, and industrial PLC outputs. The device's ability to drive inductive loads with built-in demagnetization energy handling makes it ideal for relay and solenoid replacement. In automotive lighting, the VNQ7050AJTR can drive multiple LED strings with PWM dimming, thanks to its fast switching capability. When designing with the VNQ7050AJTR, ensure adequate PCB copper area for heat dissipation, as the PowerSSO-16 package relies on the exposed pad for thermal management. The device's current limitation feature protects the load and the IC, but the designer must consider the thermal budget under continuous short-circuit conditions. Proper decoupling capacitors on the supply and careful layout of the diagnostic pins are recommended for reliable operation.
VNQ7080AJTR - Quad High-Side Driver 13.6A | STMicroelectronics | PowerSSO-16
The VNQ7080AJTR is a quad-channel smart high-side driver from STMicroelectronics, designed for automotive and industrial load-switching applications. It integrates four N-channel power MOSFETs with a 1:1 configuration, capable of delivering up to 13.6A per channel in a PowerSSO-16 package. The device operates with a very low standby current and is compatible with 3V and 5V CMOS logic outputs, making it suitable for direct microcontroller interfacing. A high-side driver is a power management IC that switches a load connected to the positive supply rail. It integrates the power switch, protection features, and diagnostic functions in a single package, simplifying PCB design and improving reliability. In the power management hierarchy, a high-side driver falls under power distribution switches, which are part of the broader category of power management ICs used in automotive body control modules, industrial PLCs, and lighting systems. Key features of the VNQ7080AJTR include a very low standby current for battery-powered applications, compatibility with 3V and 5V CMOS outputs for direct logic control, and a PowerSSO-16 package that offers a compact footprint with excellent thermal performance. The device also provides current sense analog feedback (MultiSense), enabling precise load monitoring and diagnostics. These features make it ideal for driving resistive, inductive, and capacitive loads in harsh environments. The VNQ7080AJTR uses STMicroelectronics' VIPower M0-5 technology, which integrates the power MOSFET with control and protection circuitry on a single die. This architecture provides robust protection against overcurrent, overtemperature, and short-circuit conditions, ensuring reliable operation in automotive and industrial applications. The MultiSense analog feedback allows the microcontroller to monitor load current and detect faults, enhancing system-level diagnostics. Typical applications include automotive body control modules, interior and exterior lighting, industrial PLC output stages, and DC motor control. The device's ability to handle high inrush currents and its low standby current make it particularly suitable for battery-operated systems where power efficiency is critical. When designing with the VNQ7080AJTR, ensure proper thermal management by providing adequate copper area on the PCB for heat dissipation. The PowerSSO-16 package has a thermal resistance that requires careful layout to maintain junction temperature within safe limits. Additionally, the MultiSense pin should be connected to an ADC input with appropriate filtering to achieve accurate current sensing.
VNQ7140AJTR - 40mOhm Quad High-Side Driver | STMicroelectronics
The VNQ7140AJTR is a quad-channel high-side driver from STMicroelectronics, designed for automotive and industrial loads. It integrates four 40mOhm power MOSFETs with advanced protection and diagnostic features in a PowerSSO-16 package. The device operates from a 4V to 28V supply, delivering up to 9A per channel, and is AEC-Q100 qualified for automotive applications. Data verified as of 2026-08-05. A high-side driver is a power management IC that connects a load to the positive supply rail, providing switching, protection, and diagnostic functions. It sits between the microcontroller and the load, translating low-voltage logic signals into high-current switching. In the system hierarchy, a high-side driver is a type of power switch, which falls under power management ICs, which are part of the broader semiconductor category. This device is specifically a smart high-side driver, integrating protection and diagnostics on-chip. Key features include a low ON-resistance of 40mOhm per channel, which minimizes power dissipation and supports high continuous currents. Each channel has independent overcurrent, overtemperature, and short-circuit protection, with a diagnostic output that reports fault conditions via a current-sense or digital feedback. The device also features a standby mode with very low quiescent current, making it suitable for battery-powered systems. The PowerSSO-16 package offers excellent thermal performance with an exposed pad for heat dissipation. The VNQ7140AJTR uses ST's VIPower M0-5 technology, which integrates the power MOSFET with control and protection circuitry on a single die. This architecture ensures fast and reliable switching, with a typical turn-on time of 20us and turn-off time of 30us. The device is designed to handle inductive loads, with built-in output clamping for demagnetization. It also includes a load current sense output that can be used for diagnostics or closed-loop control. Typical applications include automotive body control modules, such as driving exterior lights, interior lighting, and small motors. It is also used in industrial PLCs for driving solenoids and relays, and in smart power distribution systems. The device's wide operating voltage range and robust protection make it ideal for harsh environments. When designing with this device, ensure adequate PCB copper area for thermal dissipation, especially when driving high currents. The exposed pad should be soldered to a large ground plane. Also, consider the inrush current of capacitive loads, which may trigger overcurrent protection; a soft-start or external capacitor may be needed. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the ST datasheet, providing a comprehensive resource for engineers.
VNS1NV04D13TR - Dual OMNIFET II 40V 1.7A Low-Side Switch | STMicroelectronics
The STMicroelectronics VNS1NV04D13TR is a dual monolithic OMNIFET II fully autoprotected power MOSFET housed in a standard 8-pin SO-8 (SOIC-8) surface-mount package, integrating two independent N-channel low-side switches rated for 40V drain-to-source breakdown and 1.7A continuous channel current per device. Each switch features a 250 mOhm typical on-state resistance (RDS(on)) and is engineered for harsh automotive and industrial environments, with built-in linear current limitation, thermal shutdown, integrated active clamp, short-circuit protection, and ESD protection on the input pin. An OMNIFET II (OMNI-purpose MOSFET, second generation) is a fully protected, self-contained intelligent low-side power switch that combines the low-loss advantages of a power MOSFET with the diagnostic and protection features traditionally implemented externally. OMNIFET II devices sit within the broader category of power distribution switches, which themselves belong to the power management IC family used to drive relays, solenoids, lamps, and resistive or inductive loads in 12V and 24V systems. Key differentiating features include extremely low current draw from the logic-level input pin, automatic over-temperature and over-voltage shutdown with auto-restart, a status feedback pin that can sink current when a fault condition is detected, and a compact SO-8 footprint that allows two protected switches in the same board area previously required for a single discrete MOSFET plus protection circuitry. The active clamp absorbs inductive kickback when switching off coils, removing the need for an external freewheeling diode in most applications. The device is built on STMicroelectronics' proprietary OMNIFET II process, which co-integrates a vertical DMOS output stage with CMOS-compatible analog protection and logic blocks on the same silicon die. This co-integration eliminates parasitic wiring inductance between the MOSFET and its protection circuits, enabling faster fault response times than discrete solutions. The 3V to 5V CMOS-compatible input thresholds allow direct connection to microcontroller GPIO pins without level shifters. Typical applications include automotive body electronics such as door lock actuators, seat control motors, and lamp drivers; industrial PLC discrete outputs; relay and solenoid drivers; and any 12V/24V load-driving circuit that requires per-channel fault diagnostics. The dual-channel configuration is particularly valuable in space-constrained designs that previously required two separate protected switches. When designing with this part, ensure that the high-side of the load connects to the battery/supply rail and the low-side returns through the device's drain pin. Decouple the supply close to the source pins, and route the drain traces with adequate copper area to handle the 1.7A continuous current without exceeding the SO-8 thermal limits (typically a 2-ounce copper pour of at least 100 mm^2 per channel). This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a faster path from selection to PCB layout.
VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics
The STMicroelectronics VNS3NV04DPTR-E is a monolithic OMNIFET II fully autoprotected low-side power switch housed in an 8-pin SO-8 surface-mount package. Built on ST's proprietary VIPower M0-3 technology, the device integrates two OMNIFET II chips and replaces a standard Power MOSFET in DC switching applications up to 50 kHz. Key headline specifications include 40 V drain-source clamp voltage, 35 mOhm maximum on-state resistance, 3.5 A continuous drain current, and 12 A peak current capability. An OMNIFET II is a fully autoprotected N-channel power MOSFET with on-chip diagnostics and protection features. It belongs to the broader category of smart power switches, which sit hierarchically below discrete power MOSFETs and above simple load switches. By integrating clamping, current limiting, thermal shutdown, and ESD protection into a single die, OMNIFET II parts reduce PCB footprint, simplify firmware, and improve reliability versus discrete MOSFET + discrete protection designs. The VNS3NV04DPTR-E features built-in 40 V drain-source avalanche clamping, self-limiting current at typical 3.5 A, thermal shutdown with autorestart, and integrated ESD gate protection. Its 35 mOhm Rds(on) at 25 C keeps conduction losses low, while the SO-8 footprint with thermal pad enables effective heat spreading on standard 1- or 2-ounce copper. The device is qualified for automotive environments and targets replacement of standard Power MOSFETs in DC applications. Architecturally, the device combines two identical OMNIFET II half-bridge dies on one SO-8 substrate, giving the designer flexibility to wire the channels in parallel for higher current or in independent configuration for dual-load switching. The VIPower M0-3 process uses vertical DMOS with on-chip logic, allowing the part to behave as a self-contained solid-state relay. Typical applications include automotive body controllers, BCM-driven loads (lamps, motors, solenoids), industrial PLC output modules, and any 12 V or 24 V DC load switching requiring diagnostic feedback. Compared with mechanical relays, OMNIFET II provides silent switching, longer life, and built-in fault detection. Designers should add a 100 nF gate bypass and confirm heatsinking for PWM-driven loads above 1 A continuous.
ZXGD3009DYTA - 40V 1A Low-Side Gate Driver SOT-363 | Diodes Inc
The Diodes Incorporated ZXGD3009DYTA is a 40V, 1A low-side non-inverting gate driver IC housed in a 6-pin SOT-363 (SC-88) surface-mount package, designed to switch MOSFETs rapidly in high-current power-conversion stages. The device is a high-gain emitter-follower buffer that delivers typically 500 mA into a low-impedance MOSFET gate from only 10 mA of input drive current, and it provides separate source and sink outputs so turn-on and turn-off transitions can be tuned independently with external resistors. A gate driver is a specialized buffer/amplifier placed between a low-power controller (MCU, PWM IC, gate-driver logic output) and the gate of a power MOSFET, IGBT, or GaN transistor. Without such a buffer, the controller output cannot source or sink enough instantaneous current to charge and discharge the gate's Miller capacitance quickly, resulting in slow edges and high switching loss. Gate drivers sit in the broader hierarchy: gate driver -> MOSFET/IGBT driver -> power management IC -> semiconductor. Key specifications of the ZXGD3009DYTA include a wide VCC range that minimizes on-state losses, near-zero quiescent current, an emitter-follower output topology that is rugged against latch-up and shoot-through, and an optimized SOT-363 pin-out that simplifies PCB layout and reduces parasitic trace inductance. The separate Q1 (source) and Q2 (sink) outputs let the designer program asymmetric rise and fall times for EMI control or for paralleled-MOSFET sharing. The ZXGD3009DYTA's emitter-follower architecture is intrinsically simple and tolerant of wide supply rails; it avoids the cross-conduction concerns of totem-pole CMOS drivers. It is commonly used as a low-side switch driver in DC-DC converters, motor-control half-bridges, hot-swap controllers, solenoid and relay drivers, and class-D audio output stages where gate-charge slew control is critical. Typical applications include PFC boost stages, synchronous-rectifier drivers in SMPS, and high-current load switches in industrial and telecom power systems. By tailoring source and sink resistors the designer can deliberately slow the turn-on edge to control ringing or speed up the turn-off edge to minimize dead time. When designing with this part, place the gate-drive resistors as close to the Q1/Q2 pins as possible and keep the high-current gate loop area minimal to suppress parasitic inductance. Verify that the controller's logic output can swing within the driver's input common-mode range, and add a small base resistor on the input if the source impedance is too low to set a defined input current. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ZXMS6004DN8-13 - Dual 60V 1.3A Self-Protected N-FET IntelliFET | Diodes Inc
The Diodes Incorporated ZXMS6004DN8-13 is a dual self-protected low-side N-channel MOSFET IntelliFET with logic-level input, housed in an 8-pin SO (SO-8) package. Each of the two integrated FETs is rated at 60 V drain-to-source, 1.3 A continuous drain current, and a typical on-resistance of 0.5 ohm, providing robust switching for inductive loads driven by 3.3 V or 5 V microcontrollers. The device integrates over-temperature, over-current, over-voltage (active clamp), and ESD protection on the logic-level input, replacing a discrete MOSFET plus Zener-Diac clamp with a single 8-pin IC. An IntelliFET (Intelligent FET) is a self-protected low-side power switch that combines an N-channel enhancement-mode MOSFET with on-chip protection circuits in one package. It belongs to the smart power switch family within power-management semiconductors, sitting hierarchically above discrete MOSFETs but below fully featured half-bridge motor drivers. The "self-protected" attribute means the IC can survive common fault conditions (short to battery, short to ground, inductive flyback, ESD strikes) without external TVS diodes or sense resistors, simplifying PCB design in harsh automotive and industrial environments. Key features include dual independent 60 V / 1.3 A channels, 0.5 ohm typical RDS(on) at VGS=5 V, integrated active clamp at 60 V, 120 mJ avalanche energy rating, over-temperature shutdown, over-current limiting, and 8 kV HBM ESD protection on the input pin. The logic-level gate is driven directly from a 3.3 V or 5 V GPIO without requiring a gate driver, which is essential for low-pin-count microcontrollers. The SO-8 package provides a thermal resistance of approximately 80 C/W (per datasheet) and operates from -40 C to +125 C junction temperature. Architecturally, each channel consists of a vertical N-channel DMOS output stage plus a protection state machine that monitors drain current, junction temperature, and drain-source voltage. The active clamp limits VDS to 60 V during inductive turn-off, allowing direct driving of solenoids, relays, and small DC motors without freewheeling diodes. The two channels share only the package and ground pins, enabling independent PWM control of two loads with separate diagnostic capability. Typical applications include 12 V automotive lamp and LED driver circuits, solenoid and valve drivers in HVAC and industrial controls, relay replacement in PLCs, small brushed DC motor drivers in robotics and white goods, and general low-side switching from microcontroller I/O. The wide 60 V rating also tolerates 24 V industrial bus transients. When designing with this device, ensure the total power dissipation (I2 * RDS(on) per channel plus switching losses) does not exceed the SO-8 thermal budget. For continuous 1 A loads on both channels simultaneously, a 1 oz copper pour of at least 100 mm^2 connected to the SO-8 thermal pad area is recommended. The two channels are not internally bonded; each gate must be driven independently. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.