Amplificadores de RF
Productos (103)
RFDA2026DS - 6-Bit Digital VGA 1400-2700MHz | RFMD
The RF Micro Devices (RFMD/Qorvo) RFDA2026DS is a digitally controlled variable gain amplifier (VGA) covering 1400 MHz to 2700 MHz with 6-bit, 0.5 dB LSB step attenuation and a noise figure below 4.1 dB in its maximum gain state, packaged in a 6.0 mm x 6.0 mm leadless laminate MCM with 32 pins. Gain control is programmed through a serial (SPI) mode control interface, giving precise, repeatable gain states across the entire control range. A digitally controlled variable gain amplifier is an RF gain block whose gain is set by an integrated digital step attenuator (DSA) rather than an analog control voltage. Within the RF signal-chain hierarchy (RF ICs > variable gain amplifiers > digital step attenuator VGA), VGAs are used to keep receiver or transmitter signal levels within the optimal dynamic range of downstream components such as mixers, ADCs, and power amplifiers, compensating for fading, distance changes, and temperature drift. Key differentiating features include high linearity maintained over the entire gain control range, a 6-bit (64-state) attenuation resolution with 0.5 dB LSB steps for fine power or gain trimming, and low DC current consumption relative to comparable VGAs. The parallel digital step attenuator integrated with an amplification stage in a single MCM reduces bill-of-materials count versus a discrete DSA-plus-LNA solution and removes the need for analog control DACs. Technically, the RFDA2026 integrates a 6-bit digital step attenuator core together with a gain amplifier inside a laminate multi-chip module. Because the attenuation is placed ahead of, or within, the gain stages, both insertion loss at low gain states and linearity at high gain states are managed by the internal architecture, delivering consistent IP3 performance across gain settings. The SPI interface allows host controllers to update gain quickly and deterministically, supporting AGC loops in software-defined radios and adaptive beamforming chains. Typical applications include cellular infrastructure receiver front ends in the 1.4-2.7 GHz bands (covering 1.8 GHz DCS/PCS, 1.9-2.1 GHz WCDMA/LTE, and 2.3-2.7 GHz TDD bands), point-to-point microwave radios, and general-purpose IF/RF gain control in test equipment. The wide 1.3 GHz bandwidth allows a single part to serve multiple band plans, simplifying platform designs. For design, pay close attention to the supply decoupling and RF port matching: the MCM is matched for 50-ohm operation, but layout parasitics around the 6 x 6 mm land pattern can degrade return loss at band edges. SPI control lines should be kept short and filtered to prevent digital noise coupling into the RF path. This page synthesizes distributor-verified datasheet data, drop-in alternative discussion, and practical design notes not found in the manufacturer datasheet alone, with pricing verified as of 2026-10-10.
SKY66122-11 - 863-928MHz Wi-SUN RF Front End | Skyworks
The Skyworks Solutions SKY66122-11 is a high-performance, highly integrated RF front-end module (FEM) integrating a power amplifier (PA) and low-noise amplifier (LNA) for high-power 863 MHz to 928 MHz ISM band, Wi-SUN, and other IoT applications, housed in a 36-pin multi-chip module (MCM) package measuring 6x6 mm. An RF front-end module is a subsystem sitting between the radio transceiver IC and the antenna in a wireless signal chain. It typically combines a transmit-path power amplifier, a receive-path low-noise amplifier, RF switches for TX/RX switching, and a power detector for closed-loop output power control, all matched to 50 ohms so the system designer does not need external RF matching components. FEMs belong to the broader hierarchy of RF ICs, which includes transceivers, amplifiers, switches, and filters within the radio-frequency semiconductor family. Key features of the SKY66122-11 include fully matched 50 ohm RF input and output that eliminate external matching networks, digital control interfaces compatible with 1.6 V to 3.6 V CMOS logic levels for direct connection to common sub-GHz transceivers, an integrated RF switch for TX/RX path selection, and an integrated power detector that enables output power monitoring and closed-loop control. LCSC-listed features also cite an ultra-low 0.05 uA shutdown current, critical for battery-powered Wi-SUN and mesh nodes that sleep for most of their duty cycle. The integration of PA, LNA, switch, and coupler/detector in a single 6x6 mm MCM dramatically reduces board area compared with a discrete chain, and the internal inter-stage matching and harmonic filtering simplify compliance design for regional sub-GHz regulations in the 863-928 MHz band. The module is designed for ease of use and maximum flexibility, per the Skyworks product page. Typical applications include Wi-SUN mesh network routers and border routers, high-power ISM band telemetry, long-range Meshtastic and LoRa-style nodes (the part is used with the Semtech SX1262 in WisMesh high-power booster designs), smart metering, and street lighting control networks. Design consideration: as a high-power PA module, the SKY66122-11 requires attention to thermal pad grounding and supply decoupling; consult the manufacturer datasheet for the recommended PCB land pattern and thermal via array. This page synthesizes distributor pricing, availability, application context, and practical design notes not found in a single manufacturer datasheet.
SKY66315-11 - 4.4-5GHz 5V RF Power Amp | Skyworks
The Skyworks SKY66315-11 is a high-efficiency, wide instantaneous bandwidth RF power amplifier (driver amp) designed for 4G LTE and 5G FDD/TDD systems operating from 4.4 GHz to 5 GHz, delivering approximately 35 dB of gain in a compact 16-MCM (5 x 5 mm) surface-mount package. An RF power amplifier is a power management stage in the radio-frequency transmit chain that boosts a modulated carrier to the drive level required by the antenna or final-stage PA. Within the signal-chain hierarchy, the power amplifier sits after the upconverter/transceiver and before the front-end module, making its gain, linearity, and efficiency decisive for overall radio range and spectral compliance. Key features include full input/output matching (no external matching networks required in typical designs), integrated active biasing circuitry that compensates performance over temperature, supply voltage, and process variation, and high gain with good linearity for wide-bandwidth OFDM waveforms. The device operates from a supply voltage between 4 V and 5.25 V with typical current consumption of approximately 115 mA, supporting standard 5 V RF system rails. Architecturally, the SKY66315-11 is a fully matched multi-chip module (MCM) amplifier; the 5 x 5 mm footprint and internal impedance matching reduce board area and simplify design-in for n79-band and related 5 GHz sub-6 GHz radios. The active bias scheme keeps quiescent current stable across the -40 C to +85 C (per datasheet) range, improving gain flatness over conditions compared with fixed-bias solutions. Typical applications include 5G NR sub-6 GHz small-cell and macro-cell driver stages, 4G LTE TDD/FDD transmit chains, customer-premises equipment (CPE) and fixed wireless access radios, and test/measurement signal sources in the 4.4-5 GHz band. For design-in, verify supply decoupling with low-ESR ceramics close to the supply pins and provide an adequate ground via array under the package thermal path to manage power dissipation; also confirm ACPR/linearity under the specific waveform and back-off of the target standard. This page synthesizes distributor availability, cross-family alternatives, design guidance, and application context not found in a single manufacturer datasheet.
SKY66394-11 - 2000-2300 MHz High-Efficiency PA | Skyworks
The Skyworks SKY66394-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity, operating across 2000 MHz to 2300 MHz with up to 4W (36 dBm) output power, integrated in a compact 16-MCM 5 x 5 mm package. An RF power amplifier (PA) is the final active stage in a wireless transmitter chain that boosts a low-level modulated signal to a transmit power level suitable for radiation by an antenna. PAs sit between the transceiver/transmitter IC and the front-end filter/antenna switch, within the broader category of RF & wireless front-end modules. For small-cell base stations, PAs must simultaneously deliver high linearity (low ACLR/EVM) for LTE/3GPP compliance and high efficiency to minimize power dissipation and thermal load in space-constrained, often outdoor or pole-mounted enclosures. The SKY66394-11 is engineered specifically for FDD and TDD 2G/3G/4G LTE small-cell infrastructure. Key features include a wide instantaneous bandwidth of 300 MHz (2000 to 2300 MHz), high gain of approximately 36 dB, integrated active bias circuitry that compensates PA performance over temperature, voltage, and process variation, and full 50-ohm input/output matching that eliminates external matching components. The 5 x 5 mm MCM package integrates the active die, bias network, and matching networks to simplify PCB design and reduce board area in small-cell radio units. The SKY66394-11 belongs to a pin-to-pin compatible PA family from Skyworks, with sibling parts covering other 3GPP bands. This enables a single PCB layout to be reused across multiple regional band variants, simplifying manufacturing and inventory. The integrated active biasing stabilizes quiescent current across temperature and supply variation, eliminating the need for external bias controllers. Typical applications include 4G LTE small-cell base stations, picocell and femtocell radios, distributed antenna systems (DAS) repeaters, and Band 1 / Band 3 / Band 4 / n38 / n40 / n41 (subset) FDD and TDD cellular infrastructure. It is also suitable for industrial 2.3 GHz wireless backhaul links. When designing with this part, provide adequate heatsinking through PCB copper pours to manage thermal dissipation at high output power. Use a regulated 5V supply for VCC and follow the reference layout in the datasheet closely to preserve the integrated matching network performance. Reference impedance is 50 ohms on both RF ports. This page synthesizes distributor pricing, pin-compatible same-family alternatives (such as SKY66395-11 and SKY66396-11), and practical RF layout guidance not found in the manufacturer datasheet alone, giving the engineer a single decision-ready reference for 2.0-2.3 GHz small-cell PA selection.
TAMP-362LN+ - 3.3-3.6 GHz SMT Low Noise Amplifier | Mini-Circuits
The Mini-Circuits TAMP-362LN+ is a surface-mount low noise amplifier (LNA) covering 3300 to 3600 MHz in a 50 Ω shielded module measuring 0.591" x 0.394" x 0.118". It delivers an ultra-low 0.9 dB typical noise figure with 12 dB gain and 1.3:1 typical VSWR, while drawing only 20 mA from a single +5 V supply. A low-noise amplifier (LNA) is a specialized RF amplifier placed at the very front end of a receiver chain to add the least possible noise to a weak incoming signal before subsequent gain stages. LNAs sit within the broader taxonomy of RF amplifier -> amplifier IC/module -> RF & microwave -> active semiconductor device. Their position immediately after the antenna makes their noise figure the dominant contributor to the receiver's overall noise performance, so a sub-1 dB NF is the key figure of merit for 3.3-3.6 GHz sub-6 GHz radios. The TAMP-362LN+ utilizes advanced HJ-FET (Heterojunction Field-Effect Transistor) technology in a single-stage topology, packaged in a drop-in shielded case that requires no external matching components. Its high output IP3 provides strong linearity for handling modulated signals such as LTE, 5G NR n78, and Wi-Fi 6E carriers. The integrated bias and stabilization networks simplify PCB layout and reduce the bill of materials compared with discrete LNA designs. Typical applications include 3.5 GHz fixed wireless access (FWA), small-cell base-station receiver front ends, satellite communications L-band block-converter IF chains, and public-safety / WiMAX infrastructure. The module's compact shielded footprint also supports phased-array and MIMO radio designs where board area is at a premium. When designing with the TAMP-362LN+, follow Mini-Circuits' recommended PCB land pattern and place decoupling capacitors close to the DC feed pin to preserve stability. Ensure the 50 Ω interconnect transitions are kept short and impedance-controlled to avoid degrading the 1.3:1 VSWR specification. This product page synthesizes distributor inventory, drop-in LNA alternatives in the same footprint, and practical RF front-end design notes that supplement the manufacturer datasheet.
TB-TAMP-362LN+ SMT Low Noise Amplifier, 3.3-3.6 GHz | Mini-Circuits
The Mini-Circuits TAMP-362LN+ is an SMT low-noise amplifier (LNA) module covering 3.3 GHz to 3.6 GHz with a typical noise figure of 0.9 dB and 12 dB gain, housed in a shielded drop-in case measuring 0.591 x 0.394 x 0.118 inches. The device operates from a single +5 V supply drawing only 20 mA, eliminating the need for external matching components and simplifying PCB integration. An RF low-noise amplifier (LNA) is a specialized active component that boosts very small antenna-received signals with minimal added noise, establishing the noise floor of the entire receive chain. LNAs belong to the broader category of RF amplifier ICs/modules, which sit in the signal chain hierarchy of antenna -> LNA -> filter -> mixer -> IF/baseband. Mini-Circuits is a leading supplier of drop-in coaxial and SMT amplifier modules that integrate bias, matching, and stabilization into a single shielded package. The TAMP-362LN+ utilizes HJ-FET (Hetero-Junction FET) technology in a single-stage topology, achieving 0.9 dB typical noise figure, 12 dB gain with +/-0.4 to +/-0.8 dB gain flatness across the band, and 1.3:1 typical VSWR for both input and output. Output P1dB is 7 dBm to 11 dBm, making the device suitable as a first-stage receive amplifier in front of a moderate-IP3 mixer. The integrated shielded case eliminates the need for external RF matching networks, allowing engineers to drop the part onto a 50 ohm microstrip trace and supply +5 V through a single bias pin. The low 20 mA quiescent current eases DC budget constraints in remote radio heads, small cells, and satellite terminals where thermal management is critical. Typical applications include 3.5 GHz WiMAX front ends, CBRS (Citizens Broadband Radio Service) infrastructure, small-cell and femtocell receivers, point-to-point microwave links, and satellite communication LNBs operating in the 3.3 to 3.6 GHz band. When laying out the PCB, place the amplifier as close to the antenna/filter as possible to preserve noise figure, and use 50 ohm controlled-impedance traces on both RF pins.
ZX60-362LN-S+ - 3.3-3.6GHz Low-Noise Amplifier SMA Module | Mini-Circuits
The Mini-Circuits ZX60-362LN-S+ is a connectorized low-noise, linear RF amplifier covering 3300 MHz to 3600 MHz in a chassis-mount SMA module optimized for 50 ohm systems. Headline parameters include 9.0 to 11.5 dB gain, 0.9 to 1.2 dB noise figure, and P1dB of 8.5 to 10.5 dBm, all packaged in a 50 ohm SMA coaxial housing that requires no external matching network. A low-noise amplifier (LNA) is an RF amplifier placed at the front-end of a receiver chain immediately after the antenna, designed to add minimal noise while providing enough gain to set the system noise floor before subsequent filtering and downconversion stages. LNAs sit within the broader hierarchy of RF/microwave amplifiers -> amplifier ICs -> RF & wireless integrated circuits -> semiconductors, and are characterized by noise figure, gain, linearity (P1dB, IP3), input/output return loss, and unconditional stability. Compared with general-purpose gain blocks, LNAs prioritize noise figure and input match over raw output power. Key features of the ZX60-362LN-S+ include ±0.5 to ±1.0 dB gain flatness across the band, 1.4:1 typical input and output VSWR, +5 V single-supply operation, and unconditional stability per US patent 6,943,629. The connectorized SMA housing simplifies lab evaluation, drop-in module replacement, and reference design prototyping without the layout complexity of bare-die or surface-mount MMIC integration. The 3.3 to 3.6 GHz band directly covers WiMax and 3.5 GHz radar / fixed wireless allocations. The internal amplifier die uses a GaAs pHEMT process topology common to Mini-Circuits' ZX60 connectorized lineup, with internal 50 ohm matching networks and DC blocking on the RF path. Internal regulation provides supply-noise immunity, and the module includes reverse-voltage protection. S-parameter data files in Touchstone and View PDF formats are available from Mini-Circuits' website, supporting direct import into RF simulation tools such as Keysight ADS, Cadence AWR, and Ansys HFSS. Typical applications include 3.5 GHz WiMax subscriber equipment, 3.3 to 3.6 GHz radar front-end LNA stages, S-band telemetry and point-to-point radio receivers, base-station receive chains, and laboratory reference / evaluation platforms where a connectorized LNA is preferred over a surface-mount MMIC. When designing with this module, use a regulated +5 V supply with adequate bypass (100 nF + 10 uF) on the bias pin to prevent noise injection through the DC feed, and verify S-parameters against your system's noise and gain budget using Mini-Circuits' Touchstone files. This page synthesizes distributor pricing, connectorized-module cross-references, and practical front-end design notes not found in the manufacturer datasheet.