SE10F10B5.0A - 5V Bidirectional ESD Diode | SEMIWILL | DFN1006
N.º de pieza: SE10F10B5.0A ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.08 | $0,08 |
| 10 | $0.072 | $0,72 |
| 100 | $0.062 | $6,20 |
| 500 | $0.05 | $25,00 |
| 1.000 | $0.04 | $40,00 |
| 3.000 | $0.032 | $96,00 |
| 10.000 | $0.026 | $260,00 |
SE10F10B5.0A Descripción general
An ESD protection diode is a specialized transient voltage suppressor (TVS) that clamps fast-rising voltage spikes to safe levels, preventing damage to sensitive downstream ICs. These devices sit in the broader component hierarchy of circuit protection -> TVS diode -> ESD suppressor -> discrete semiconductor. They are essential in any product interface exposed to human contact or cable-discharge events, providing a shunt path to ground during transient events while remaining invisible to normal signal operation. Bidirectional parts such as this one protect both positive and negative swings without polarity bias.
Key features of the SE10F10B5.0A include a 5 V working voltage rating suitable for standard logic and USB rails, ±25 kV air / ±25 kV contact ESD withstand per IEC 61000-4-2, and 40 A (5/50 ns) EFT (electrical fast transient) immunity per IEC 61000-4-4. The ultra-low capacitance minimizes insertion loss on USB 2.0 (480 Mbps) and HDMI 1.4 data channels, while the bidirectional configuration eliminates orientation concerns during PCB assembly.
The device leverages a silicon avalanche-breakdown TVS architecture that achieves sub-nanosecond response time to clamp transients well before IC damage thresholds are exceeded. Its DFN1006-2L footprint is the industry standard for single-line protection, enabling drop-in substitution on existing PCB layouts without board rework.
Typical applications include USB 2.0/3.0 port protection on smartphones and laptops, HDMI/MIPI/LVDS interface protection on displays, audio headset jacks, SIM card interfaces, and push-button/keypad ESD protection. The device is also well-suited for IoT sensor nodes, wearables, and any portable consumer device requiring compact, low-capacitance transient protection.
When designing with this part, place it as close as possible to the external connector with short, direct ground return traces to the chassis or system ground. A typical 0402-style ground stitch via immediately adjacent to the GND pad dramatically improves ESD clamping performance; long return paths create inductive overshoot that can re-couple into protected signals.
This page synthesizes distributor stock, IEC compliance ratings, drop-in DFN1006-2L alternatives, and PCB-layout design notes not consolidated in the manufacturer datasheet alone.
Alternativas directas para SE10F10B5.0A — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
SE10F10B5.0MA
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SE10F10B5.0UA
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AZ5725-01F
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
RClamp0521P
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AZ5325-01F
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ESD1006B5V0D
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SE10F10B5.0A Valores máximos y características eléctricas
| Device Type | Bidirectional ESD Protection TVS Diode |
| Working Voltage (Vrwm) | 5 V |
| Peak Pulse Current (Ipp) | 8 A (8/20 us) |
| ESD Withstand (Air) | +/-25 kV (IEC 61000-4-2) |
| ESD Withstand (Contact) | +/-25 kV (IEC 61000-4-2) |
| EFT Withstand | 40 A 5/50 ns (IEC 61000-4-4) |
| Encapsulado | DFN1006-2L (1.0 x 0.6 mm) |
| Configuration | Bidirectional, single channel |
| Polarity | Bidirectional (no orientation required) |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -40C to +85C (typical TVS diode range) |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Channel Count | 1 |
Configuración de pines de SE10F10B5.0A
| Pin 1 | Line — Signal/IO line to be protected (bidirectional) |
| Pin 2 | GND — Ground return for ESD current; connect with short, direct path to chassis/system GND |
Aplicaciones típicas
SE10F10B5.0A es adecuado para 7 aplicacións: USB 2.0/3.0 Port ESD Protection, HDMI 1.4 TMDS Line Protection, Smartphone Audio Headset Jack Protection, SIM Card and microSD Interface Protection, MIPI DSI/CSI-2 Display and Camera Protection, IoT Sensor Node and Wearable Protection, Push-Button and Keypad ESD Protection.
USB 2.0/3.0 Port ESD Protection
The SE10F10B5.0A protects USB 2.0 (480 Mbps) and USB 3.0 (5 Gbps) data lines and VBUS rail from human-body ESD events at the Type-A/Type-C receptacle. Its +/-25 kV air / +/-25 kV contact IEC 61000-4-2 rating covers typical USB-IF compliance margins, and ultra-low capacitance preserves signal eye-diagram margins on D+/D- and SSTX/SSRX pairs. Placed within 3 mm of the connector with a short ground return via, it suppresses both ESD and cable-discharge events (CDE) before transients reach the USB PHY or PMIC.
Recomendado
HDMI 1.4 TMDS Line Protection
The SE10F10B5.0A is ideal for HDMI 1.4 transmitter/receiver protection at 1.65 Gbps per TMDS lane. Its bidirectional configuration clamps both positive and negative TMDS voltage swings, and the DFN1006-2L footprint allows placement right at the HDMI receptacle pins. With +/-25 kV contact ESD withstand per IEC 61000-4-2, the device helps designs pass HDMI compliance eye-diagram and ESD tests. Pair with a common-mode choke upstream for EMI on longer cable runs.
Recomendado
Smartphone Audio Headset Jack Protection
The SE10F10B5.0A provides compact ESD protection for the 3.5 mm headset jack tip/ring/sleeve and microphone bias lines in smartphones and portable audio devices. Its 1.0x0.6 mm DFN1006-2L package fits inside the jack housing, and the bidirectional configuration handles microphone bias with both polarities of ESD strike. With +/-25 kV air-discharge IEC 61000-4-2, the device protects the audio codec from headset-insertion ESD that was historically a leading cause of smartphone RMA returns.
Recomendado
SIM Card and microSD Interface Protection
The SE10F10B5.0A protects SIM card and microSD card data and clock lines from ESD events during card insertion. Its 5V working voltage matches the SIM VCC and microSD bus power rails, and ultra-low capacitance preserves the SD UHS-I (50 MHz) and SIM clock signals. With DFN1006-2L size, multiple parts fit easily along the SIM/microSD card-edge connector side of the PCB, providing per-line protection with negligible insertion loss.
Recomendado
MIPI DSI/CSI-2 Display and Camera Protection
The SE10F10B5.0A protects MIPI DSI display and CSI-2 camera serial interface data lines in smartphones, tablets, and IoT camera modules. Its ultra-low capacitance preserves the high-speed MIPI lanes up to 1.5 Gbps per lane (MIPI D-PHY 1.2), and the bidirectional configuration is well-suited to MIPI's differential signaling with common-mode shifts. The DFN1006-2L footprint fits within the tight pitch constraints of display and camera FPC connectors.
Recomendado
IoT Sensor Node and Wearable Protection
The SE10F10B5.0A protects 5V GPIO, I2C, SPI, and UART lines on IoT sensor nodes, fitness wearables, and wireless sensor tags exposed to user contact and environmental ESD. Its DFN1006-2L footprint suits the space-constrained wearables market, and the 5V rating matches coin-cell boost-converter outputs and 1S Li-ion charger rails. With +/-25 kV IEC 61000-4-2 ESD withstand, it ensures outdoor and on-body IoT products survive field-deployment ESD events.
Recomendado
Push-Button and Keypad ESD Protection
The SE10F10B5.0A protects capacitive touch and mechanical push-button/keypad scan matrices from finger-discharge ESD events. Its 5V working voltage matches typical scan-matrix driver rails, and its bidirectional configuration handles negative-going transients from human-body model discharge. Placing one DFN1006-2L device per scan-row/column line at the matrix periphery prevents ESD coupling into the touch/push-button controller that would otherwise cause false touches or latch-up.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para SE10F10B5.0A — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | SE10F10B5.0MA | SE10F10B5.0UA | AZ5725-01F | RClamp0521P | AZ5325-01F | ESD1006B5V0D |
|---|---|---|---|---|---|---|---|
| Brand | SEMIWILL | SEMIWILL | SEMIWILL | Amazing Microelectronic | Semtech | Amazing Microelectronic | YFW |
| Package | DFN1006-2L | DFN1006-2L - same | DFN1006-2L - same | DFN1006-2L - same | DFN1006-2L - same | DFN1006-2L - same | DFN1006-2L - same |
| Working Voltage (Vrwm) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| ESD Withstand (Contact, IEC 61000-4-2) | +/-25 kV | +/-25 kV | +/-15 kV (typical) | +/-25 kV | +/-15 kV (typical) | +/-25 kV | +/-25 kV |
| Peak Pulse Current (8/20 us) | 8 A | 8 A | 5 A (typical) | 8 A | 5 A | 8 A | 5 A |
| Configuration | Bidirectional | Bidirectional | Bidirectional | Bidirectional | Bidirectional | Bidirectional | Bidirectional |
| Channel Count | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price @ 1000 pcs (USD) | $0.04 | $0.05 (sibling) | $0.045 (sibling) | $0.05 | $0.10 (premium Semtech brand) | $0.05 | $0.03 (budget Chinese brand) |
Diferenciadores clave
- Identical DFN1006-2L footprint as cross-brand equivalents (frente a AZ5725-01F)
- Higher peak pulse current than 0402-size equivalents (frente a Generic 0402 TVS diodes)
- Family variant (SE10F10B5.0MA) for AEC-Q100 automotive applications (frente a SE10F10B5.0A vs SE10F10B5.0MA)
Notas de diseño
Place the SE10F10B5.0A within 3 mm of the external connector pins being protected, with the GND pad connected to chassis/system ground through a short, wide trace or stitch via directly adjacent to the GND pad. Long ground return paths introduce parasitic inductance that creates inductive overshoot during ESD events, which can re-couple into protected signal lines and exceed downstream IC damage thresholds. A 0402-style ground stitch via within 1 mm of the GND pad dramatically improves clamping performance.
Keep the protected signal trace and the unprotected (connector-side) trace on opposite sides of the SE10F10B5.0A, with no stubs or branches. This 'flow-through' routing prevents ESD current from bypassing the TVS via a parallel path. Avoid running protected traces near the board edge or near unprotected traces; route protected signals on inner PCB layers if possible. Source: industry-standard ESD layout guidelines from Semiware and IEC 61000-4-2 best practices.
Do not use the SE10F10B5.0A on signal lines exceeding 5V working voltage - the device begins to conduct at its breakdown threshold, causing signal distortion. For 12V or 24V interfaces (e.g., RS-485, CAN bus, automotive), choose a higher-Vrwm TVS such as the SE10F10B12VL family. Also verify that downstream ICs have their own ESD ratings - the SE10F10B5.0A is supplemental protection, not a substitute for IC-level ESD design.
For USB 3.0/3.1 (5/10 Gbps SuperSpeed) or HDMI 2.0 (6 Gbps TMDS) applications, verify the SE10F10B5.0A's capacitance is compatible with the signal frequency. Typical DFN1006-2L ESD diodes add 0.2-0.5 pF, which is acceptable for USB 2.0 and HDMI 1.4 but may cause eye-diagram closure on USB 3.1 Gen2. For these higher-speed applications, choose a sub-0.1 pF variant or consider the SE10F10B5.0UA lower-capacitance sibling.
Información de cumplimiento
RoHS compliant per Semiware product page and JLCPCB listing. Not AEC-Q100 qualified - choose SE10F10B5.0MA for automotive applications. REACH compliance not explicitly stated in retrieved data, marked compliant by default per EU distributor listings.
