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BFU520R - NPN 12V 10.5GHz Wideband RF Transistor | NXP
The NXP Semiconductors BFU520R is an NPN wideband silicon RF bipolar junction transistor (BJT) rated for 12V operation with a transition frequency of 10.5 GHz and 450 mW total power dissipation, housed in a plastic 4-pin dual-emitter SOT-143B surface-mount package. An RF bipolar transistor is a discrete semiconductor device used to amplify or switch high-frequency signals. Within the component hierarchy, it sits under NPN BJT -> bipolar transistor -> transistor -> discrete semiconductor. The BFU5 family from NXP targets small-signal to medium-power applications up to 2 GHz, where low noise and high breakdown voltage are the key selection criteria. Key features include low noise figure suitable for front-end LNAs, high breakdown voltage for robust operation, AEC-Q101 automotive qualification, and operation up to 2 GHz in small-signal to medium-power roles. DigiKey lists the part as an RF transistor NPN 12V 30mA 10.5GHz 450mW, while FindIC cites 16V collector-emitter breakdown class and 0.05A current rating for the automotive-qualified device. The dual-emitter SOT-143B construction minimizes emitter lead inductance, which directly improves gain at high frequencies and preserves noise performance. The die uses NXP silicon RF bipolar process technology optimized for wideband amplifiers, gain blocks, and oscillator stages in RF signal chains. Typical applications include VHF/UHF antenna amplifiers, LNA front ends in receivers, ISM band transmitters, and automotive RF systems requiring AEC-Q101 qualified discretes. Design consideration: bias network stability and emitter grounding are critical - keep the dual-emitter connection directly to a ground pour to exploit the low-inductance package and avoid gain ripple above 1 GHz. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BFU520W - NPN 2GHz Low Noise RF Transistor | NXP
The NXP Semiconductors BFU520W is an NPN wideband silicon RF transistor for high-speed, low-noise applications, housed in a plastic 3-pin SOT323 (SC-70/SOT323, SC-70 family) surface-mount package and suited for small-signal to medium-power use up to 2 GHz. An RF bipolar junction transistor (BJT) is a discrete semiconductor amplifier device optimized for gain and noise figure at radio frequencies, sitting within the transistor hierarchy: BFU520W -> NPN silicon RF transistor -> small-signal BJT -> discrete semiconductor -> semiconductor device. Unlike general-purpose switching BJTs, RF transistors such as the BFU5 family are characterized at megahertz-to-gigahertz frequencies with S-parameters, noise figures, and gain figures that general-purpose parts never specify. Key features include low-noise, high-breakdown RF performance in a very small footprint, AEC-Q101 qualification for automotive reliability, and membership in the NXP BFU5 family that supports small-signal through medium-power designs up to 2 GHz. These attributes make the BFU520W attractive where board area, reliability qualification, and noise performance must coexist, such as receiver front ends and IF/RF gain blocks. Architecturally, the device is an NPN silicon BJT whose die and lead-frame geometry are optimized to minimize parasitic capacitance and inductance, preserving gain-bandwidth product and stability at UHF and lower microwave frequencies. NXP provides the BFU5 family so designers can scale current and package options while keeping bias and layout methodologies consistent. Typical applications include low-noise amplifier (LNA) input stages in receivers, IF and RF gain stages in communication equipment, and oscillators/buffers operating up to 2 GHz. Design consideration: the SOT323 package has extremely short leads, so stray inductance from long traces or vias rapidly degrades RF performance; use solid ground planes and short, decoupled input/output traces. This page synthesizes verified manufacturer data, pricing references, drop-in alternatives, and practical RF layout notes not found in the standard NXP datasheet.
BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP
The NXP Semiconductors BFU520WF is an NPN wideband silicon RF bipolar transistor in a plastic 3-pin SOT323 (SC-70) package, delivering a minimum noise figure of 0.6 dB at 900 MHz, a maximum stable gain of 18.5 dB at 900 MHz, and an 11 GHz fT silicon technology, with 12 V collector-emitter and 450 mW total power ratings. A wideband RF transistor is a small-signal bipolar junction transistor optimized for high-frequency gain and low noise rather than power switching. Within the amplifier hierarchy, it sits as the active element of RF amplifiers, which in turn belong to the broader categories of analog signal chain components and semiconductor discrete devices. The BFU5 family is aimed at small-signal to medium power applications up to 2 GHz. Key features include its exceptionally low 0.6 dB NFmin, high breakdown voltages for headroom in high-supply designs, AEC-Q101 qualification for automotive reliability, and the compact surface-mount SOT323 footprint that saves PCB area in dense RF layouts. Technically, the device uses NXP's 11 GHz fT silicon process, providing usable gain well into the GHz range while maintaining low 1/f-corner noise, which benefits receiver front-end sensitivity and oscillator phase-noise performance. The high breakdown rating distinguishes it from typical low-voltage mmWave BJTs. Typical applications include low-noise amplifiers for ISM-band receivers, broadband amplifiers up to 2 GHz, and ISM-band oscillators where a high fT and clean noise floor are required. Design consideration: bias the device for the target noise-match point using an inductor-source or resistive emitter topology, and verify stability (K-factor) across the full band since high-gain RF BJTs can oscillate without careful input/output matching. This page synthesizes distributor pricing, drop-in alternatives, pinout, and practical design notes not found in the manufacturer datasheet.
BFU520XR - NPN RF Transistor 2GHz SOT143R | NXP
The NXP Semiconductors BFU520XR is an NPN wideband silicon RF transistor for high-speed, low-noise applications, housed in a 4-pin dual-emitter SOT143R plastic package, suitable for small-signal to medium-power use up to 2 GHz with a continuous collector current of 50 mA. An RF wideband transistor is a small-signal bipolar junction transistor (BJT) optimized for gain and low noise at radio frequencies, rather than for switching or power conversion. Within the component hierarchy, it sits under NPN BJT -> RF transistor -> wideband transistor -> discrete RF semiconductor. Such devices form the front-end gain blocks of receivers, IF amplifiers, and buffer stages where maintaining signal-to-noise ratio matters more than raw output power. Key features of the BFU520XR include operation up to 2 GHz in the BFU5 family performance class, a 50 mA collector current rating for small-signal to medium-power service, and the SOT143R package with dual emitter pins. The dual-emitter pinout provides two separate emitter bonds, which reduces emitter lead inductance - a critical factor for stable, high-gain operation at gigahertz frequencies and for flexible grounding on the PCB. Technically, the device is a silicon NPN planar transistor designed by NXP for wideband linear amplification. Its transition frequency class and low-noise figure make it appropriate for L-band and related RF bands, as reflected in its classification as an L-band small-signal RF bipolar transistor in distributor databases. The SOT143R footprint is a four-lead surface-mount gull-wing package that assembles on standard SMT lines without special handling. Typical applications include wideband amplifier stages in receivers, IF and RF buffer amplifiers, low-noise front-end gain blocks, and general-purpose amplification up to 2 GHz in communication equipment. When designing with the BFU520XR, pay close attention to emitter grounding: keep the emitter connections to the ground plane short and direct, since series inductance degrades gain and stability at 1-2 GHz. Bias stabilization of the collector current is essential for consistent noise figure and gain. This page synthesizes verified manufacturer data, distributor availability, drop-in alternatives, and practical RF layout guidance not found together in the manufacturer datasheet.
BIM300D75P3I001 - 300A 750V IPM IGBT Module | BYD Semiconductor
The BYD Semiconductor BIM300D75P3I001 is a 300 A, 750 V Intelligent Power Module (IPM) that integrates a three-phase IGBT inverter stage, optimized gate drivers, and comprehensive protection functions into a single package. According to the BYD Semi IPM product page, the module is engineered for high-power motor drive applications and uses advanced IGBT technology with low VCE(sat) to balance switching speed and conduction loss. The 750 V breakdown rating provides sufficient margin for 400 V and 480 V AC bus rectification, while the 300 A continuous output supports industrial inverter power levels above 75 kW. An Intelligent Power Module (IPM) is a power electronics building block that combines the power semiconductors (IGBTs and freewheeling diodes) with their gate drive circuitry, level-shifters, and protection logic inside one isolated housing. The IPM sits hierarchically below discrete IGBT modules and above gate-driver ICs in the power management taxonomy; its purpose is to dramatically shorten inverter development time by removing the need to design a half-bridge driver, dead-time circuit, and fault handling from scratch. The BIM300D75P3I001 family is part of the BYD IPM portfolio targeting three-phase motor drives, servo amplifiers, and HVAC compressor inverters. Key features include built-in under-voltage lockout (UVLO) for each phase, short-circuit protection via DESAT detection, integrated thermal sensing with over-temperature shutdown, and an isolated package baseplate. The internal gate drive stage is matched to the IGBT dies, eliminating external negative supply requirements and reducing PCB complexity. These features collectively reduce BOM count, shrink the inverter footprint, and improve long-term reliability compared with discrete three-phase inverter implementations. From an electrical architecture perspective, the BIM300D75P3I001 uses a six-pack topology where three high-side and three low-side IGBTs form a full three-phase bridge. Each phase leg has its own gate drive bootstrap supply domain, simplifying control interface to a logic-level PWM signal from the MCU or DSP. The integrated protections ensure that abnormal conditions such as shoot-through, ground loss, or excessive junction temperature trigger a single fault flag rather than damaging the silicon. Typical applications include three-phase AC motor drives for HVAC compressors, industrial servo drives, electric vehicle traction auxiliary inverters, and solar pump inverters. Designers select the BIM300D75P3I001 when they need a proven, compact power stage with built-in protection to shorten regulatory certification cycles. When designing with this device, pay close attention to heatsink selection, baseplate isolation, and creepage/clearance distances. The module's continuous current rating assumes a specific thermal resistance to ambient; derate for high ambient temperatures or restricted airflow conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the BYD Semiconductor datasheet to support faster inverter design decisions.
BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC005N03LS5IATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 30 V VDS and continuous drain current up to 433 A at 25 °C case temperature, housed in a SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount package. Its headline figures are an ultra-low maximum on-resistance of 0.55 mΩ at 10 V VGS, a threshold voltage of 2 V at VGS = 10 mA, and a power dissipation capability of 188 W at Tc. An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. MOSFETs belong to the discrete semiconductor family, the building blocks of all switched-mode power conversion - buck, boost, half-bridge, and full-bridge topologies all rely on one or more MOSFETs as synchronous rectifiers or low-side switches. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, optimized for the lowest figure-of-merit (RDS(on) × Qg) in its voltage class. Key features of the BSC005N03LS5IATMA1 include its 0.55 mΩ maximum RDS(on) at VGS = 10 V, ID = 50 A conditions, the SuperSO8 5x6 package with an exposed drain pad providing a thermal resistance of roughly 0.85 K/W junction-to-case, and an operating junction temperature range of -55 °C to +175 °C. The low gate charge and fast switching speed are tailored for high-frequency DC-DC converters and OR-ing applications. In typical 12 V bus architectures - server point-of-load converters, telecom SilverBox rails, and USB-PD source designs - the BSC005N03LS5IATMA1 acts as the synchronous rectifier or main switch where its sub-milliohm RDS(on) directly translates into conduction-loss reduction. The low RthJC of the SuperSO8 package allows sustained high current in compact layouts when paired with adequate copper cooling. Designers should pay attention to gate-drive voltage headroom: the device is fully enhanced at 10 V VGS, and switching at 4.5 V VGS will significantly raise RDS(on) and conduction losses. PCB layout must keep the gate loop (driver → RG → gate → source → driver return) under 5 mm of total loop length to suppress ringing. For supply-chain and lifecycle planning, this part is in active production as of 2026-09-15 and is widely stocked at major distributors. RoHS compliance is confirmed by the LCSC listing. This page consolidates distributor pricing, verified Infineon datasheet specifications, and same-family alternatives into a single engineer-focused reference.
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC009NE2LS5IATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 25V/30V platform, delivering an industry-leading 0.95 mΩ maximum R_DS(on) at V_GS=10V and continuous drain current up to 217A at case temperature, housed in a compact PG-TDSON-8-7 (SuperSO8 5x6) surface-mount package. Designed as a benchmark for synchronous rectification, OR-ing, and hot-swap circuits, the device combines ultra-low on-state losses with best-in-class FOM (R_DS(on) × Q_G) for high-frequency switching applications. An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of a P-type body region to form an N-type conduction channel between source and drain. Within the broader semiconductor taxonomy, MOSFETs belong to the discrete power-device family (alongside IGBTs and GaN HEMTs), serving as the fundamental switching element in modern switch-mode power supplies, motor drives, and battery-protection circuits. The OptiMOS™ 5 generation specifically targets sub-30V rails where it competes with integrated DrMOS and GaN FETs by offering a mature silicon process, broad second-source availability, and well-characterized gate-drive requirements. Key electrical parameters include V_DS = 25V maximum, V_GS(th) = 1.0V to 2.0V typical (1.7V nominal), continuous I_D = 40A at T_A=25°C on a small PCB pad rising to 217A pulsed at T_C=25°C, pulsed drain current capability far exceeding continuous ratings for short switching transients. Power dissipation is rated 2.5W at T_A and 74W at T_C, giving designers ample thermal headroom when mounted on sufficient copper. Total gate charge Q_G is 23 nC typical at V_GS=0 to 4.5V, and the input capacitance C_iss is 3200 pF typical — low enough to be driven efficiently by standard gate drivers without excessive crossover loss. Typical applications include synchronous rectification in 12V-output DC-DC converters, OR-ing FETs in redundant server PSU and telecom power architectures, hot-swap / e-fuse circuits on distributed 12V/5V backplanes, motor-drive half-bridges in battery-powered tools, and high-current load switches in USB-PD and Type-C sink applications where low R_DS(on) directly reduces conduction loss and improves system efficiency. The device's monolithic Schottky-like body diode and low reverse-recovery charge also make it suitable for high-frequency buck and forward converters where dead-time losses dominate. When designing with this MOSFET, pay particular attention to gate-drive voltage: V_GS=10V is required to achieve the datasheet's 0.95 mΩ R_DS(on), so a bootstrap or charge-pump supply is typically required in high-side applications. Thermal management must include a sufficiently large copper pour (the PG-TDSON-8-7 has an exposed drain pad); at 217A pulsed the silicon can exceed safe junction temperature within milliseconds if the thermal path is inadequate. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes drawn from the Infineon OptiMOS™ 5 datasheet — context not typically aggregated in manufacturer documentation or distributor listings.
BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
The Infineon BSC009NE2LSATMA1 is an N-channel 25V OptiMOS power MOSFET in a PG-TDSON-8-7 (TDSON-8 FL) surface-mount package featuring the industry's lowest on-state resistance per footprint. It delivers 41A continuous drain current at 25C case temperature and up to 100A/255A pulsed capability, with a maximum R_DS(on) of 0.9 mOhm at V_GS = 10V. The device uses Infineon's advanced OptiMOS 25V silicon process, targeting high-frequency, high-current, low-voltage applications. What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals. The N-channel variant uses electrons as the primary charge carrier, offering lower on-resistance than equivalent P-channel devices. Power MOSFETs like the BSC009NE2LSATMA1 belong to the discrete semiconductor family and serve as the switching element in synchronous buck converters, motor drives, and battery protection circuits where minimal conduction loss is critical. Key specifications include 25V drain-source breakdown voltage, 0.9 mOhm maximum R_DS(on) at 10V V_GS, 41A continuous drain current (T_a), 100A continuous / 255A pulsed drain current (T_c), 2.5W power dissipation (T_a) and 96W power dissipation (T_c). The PG-TDSON-8-7 package provides an exposed thermal pad with low thermal resistance for direct PCB heatsinking. The OptiMOS technology platform uses a trench-gate structure with an epitaxial layer optimized for low R_DS(on) x Q_g figure of merit. This architecture reduces both switching and conduction losses, enabling higher-frequency operation in switched-mode power supplies. The part's low gate charge and small Miller capacitance make it well-suited for high-current DC-DC conversion and OR-ing applications. Typical applications include battery management systems (BMS) in notebooks, tablets and power tools, OR-ing switches in redundant power architectures, synchronous rectification in 12V bus converters, hot-swap circuits on server backplanes, and motor drive half-bridges in small BLDC fans. Its 0.9 mOhm R_DS(on) keeps conduction losses below 1% even at 30A continuous load, minimizing heatsinking requirements. When designing with this device, observe the SOA curve for pulsed loads and ensure V_GS(th) is well above any noise on the gate drive. Use Kelvin-source connection when available to avoid gate-bounce induced turn-on. The exposed pad must be soldered to a sufficient copper area for thermal dissipation. This page synthesizes distributor pricing, parametric alternatives, application guidance, and thermal considerations that complement the manufacturer datasheet.
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
The Infineon BSC010N04LSATMA1 is a 40 V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, delivering 100 A continuous drain current (Tc) and a maximum on-resistance of 1.0 mOhm at 10 V VGS, all packaged in a SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount land. Optimized for synchronous rectification in switched-mode power supplies, this part features excellent gate charge x RDS(on) figure of merit (FOM), very low on-state loss, and 100% avalanche-tested ruggedness, making it ideal for secondary-side synchronous rectifiers and high-frequency DC-DC converter stages. Per the Infineon OptiMOS 5 datasheet family, the device is RoHS-compliant, halogen-free, MSL1 rated, and supports logic-level gate drive. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled semiconductor switch whose conduction channel is formed by electrons, giving it intrinsically lower on-resistance than equivalent P-channel devices at the same silicon area. Power MOSFETs sit in the broader discrete-semiconductor hierarchy alongside IGBTs, BJTs, and diodes, and they dominate applications below 250 V where their switching speed and low conduction loss are critical. Within synchronous rectification, two MOSFETs replace lossy Schottky diodes in the rectifier position to cut conduction loss, raise efficiency, and shrink thermal budgets in high-density converters. Key features include a 40 V drain-source breakdown voltage (VDS max), 100 A continuous drain current (Tc), 1.0 mOhm maximum RDS(on) at VGS=10 V, logic-level VGS(th) of 2 V, and a SuperSO8 5x6 exposed-flange package that minimizes thermal resistance and maximizes current-handling density. The device also offers superior thermal performance with low RthJC for heat-sink-free operation in many 12 V bus applications, plus 100% avalanche rating that confirms robust transient handling. On the architecture side, OptiMOS 5 uses Infineon's advanced trench-cell geometry to slash both conduction loss and switching loss simultaneously, yielding best-in-class FOM (Qg x RDS(on)). The SuperSO8 (PG-TDSON-8 FL) package integrates a large drain-tab thermal pad, enabling direct PCB cooling and high surge-current tolerance. Typical applications include synchronous rectification in 12 V server and telecom DC-DC bus converters, secondary-side rectification in multi-phase VRM modules, OR-ing and hot-swap switches on 24 V industrial rails, motor-drive H-bridges for low-voltage BLDC motors, and battery protection MOSFETs in 4S-8S Li-ion packs where ultra-low RDS(on) is critical for runtime. When designing with this part, ensure the gate-drive voltage reaches at least 4.5 V for full enhancement of RDS(on), and minimize stray source-inductance in the gate-drive loop to keep dV/dt-induced turn-on transients under control. Use a 10 kohm gate pull-down to keep the device off during controller start-up.
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSC010NE2LSIATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 25V technology, rated at 25 V VDS, 38 A continuous drain current at TA (100 A at TC), and 2.5 W power dissipation at TA (96 W at TC). It is housed in a surface-mount PG-TDSON-8-7 (also referenced as TDSON-8 EP) package with an exposed thermal pad. According to the Infineon datasheet for the BSC010NE2LSI family, this part targets high-current, low-voltage power conversion where conduction loss dominates. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used as a low-side or high-side switch in DC-DC converters, motor drivers, and load protection circuits. The OptiMOS family is Infineon's optimized trench MOSFET platform for synchronous rectification, OR-ing, and hot-swap applications. As a discrete power semiconductor, it sits below MOSFET driver ICs and above protection/passive components in the power-tree hierarchy, making it a foundational block in synchronous buck, buck-boost, and half-bridge topologies. Key features include very low on-state resistance, low gate charge, and a logic-level compatible VGS(th) that allows direct drive from 3.3 V or 5 V microcontrollers. The PG-TDSON-8-7 package combines a small footprint with a large exposed pad, reducing RthJA and enabling high continuous current handling in space-constrained designs. The TDSON-8 pinout (Gate, Drain, Source, Drain, Drain, Drain, Drain, Drain) is the de facto standard for low-voltage high-current MOSFETs, allowing layout reuse across generations. In synchronous rectification in 12 V-input buck converters, the BSC010NE2LSIATMA1 acts as the low-side switch. Its low Rds(on) minimizes conduction loss, and the small Qg supports sub-ns switching transitions, raising light-load efficiency. The 25 V VDS rating provides adequate margin above nominal 12 V rails, accommodating transient spikes from inductive parasitics. This part is widely used as the synchronous FET in point-of-load regulators, GPU/CPU VRMs, hot-swap controllers, and battery management switching stages. When designing with this MOSFET, place the gate-drive loop (gate driver to gate-to-source) as short as possible to limit ringing. Use 1-2 nF of gate-source pull-down to prevent unintended turn-on, and ensure the exposed pad is soldered to a sufficiently large copper pour to dissipate up to 96 W peak power. Following the manufacturer typical-application reference designs and gate-drive recommendations is critical to fully realize the efficiency advantage of OptiMOS technology.
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
The Infineon BSC011N03LSATMA1 is an N-channel OptiMOS 30V power MOSFET rated at 30V drain-source breakdown and 100A pulsed drain current in a compact PG-TDSON-8-1 (SuperSO8) surface-mount package. Key headline parameters are 1.1 mOhm maximum on-state resistance at VGS=10V, 100A continuous drain current at TC=25C, and 96W maximum power dissipation, making it one of the lowest-RDS(on) parts in its voltage class for the TDSON-8 footprint. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when gate-to-source voltage exceeds its threshold. N-channel enhancement-mode MOSFETs are the workhorse of synchronous buck converters, hot-swap controllers, OR-ing circuits, and motor drivers because their low on-resistance minimizes conduction loss. Within the power semiconductor hierarchy, MOSFETs sit alongside IGBTs, voltage references, and surge protectors as discrete switching devices used in power management and load switching subsystems. The BSC011N03LSATMA1 leverages Infineon's OptiMOS technology platform, which delivers ultra-low gate charge (Qg) and output charge (Qoss) for fast switching transitions. The TDSON-8 package with exposed pad provides a thermal resistance of approximately 40 C/W junction-to-case, enabling the part to sustain the 100A pulsed rating in a footprint compatible with the industry-standard PowerPAK SO-8 land pattern. Typical applications include voltage regulator modules (VRMs) for servers and datacom, point-of-load converters, synchronous rectification in telecom bricks, hot-swap and OR-ing in 12V distribution, and battery protection in power tools. The 30V drain-source rating provides ample margin above 12V buses while keeping RDS(on) lower than 40V-class competitors. When designing with this MOSFET, pay attention to gate drive voltage - full enhancement requires VGS of 10V to achieve the datasheet RDS(on). Driver losses scale with Qg, so a gate driver with 1A peak source/sink capability is recommended for hard-switched applications above 100 kHz. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
The Infineon BSC011N03LSIATMA1 is an N-channel 30 V OptiMOS™ power MOSFET featuring an ultra-low on-state resistance of 1.1 mΩ (typical at 10 V VGS) in a compact PG-TDSON-8-7 surface-mount package. It is rated for 37 A continuous drain current at 25 °C case ambient and 100 A pulsed, with a maximum power dissipation of 2.5 W at TA and 96 W at TC. An OptiMOS power MOSFET is a trench-technology N-channel enhancement-mode MOSFET optimized for low-voltage (typically ≤100 V) synchronous rectification, DC-DC conversion, and hot-swap applications. As a member of Infineon's OptiMOS 30 V family, the BSC011N03LSI sits within the broader power MOSFET hypernym hierarchy of discrete semiconductors, and is engineered for highest power density and energy efficiency at the lowest specific on-resistance. Key specifications include 30 V VDS, ±20 V VGS, an integrated Schottky-like monolithically optimized body diode, and an operating junction temperature range of -55 °C to +150 °C. The PG-TDSON-8-7 package provides an exposed drain pad (pin 5-8) for low thermal resistance, enabling efficient heat extraction in space-constrained designs. The part is fully RoHS compliant and qualified to JEDEC standards for moisture sensitivity level 1. The OptiMOS 30V cell uses an advanced trench gate structure that minimizes both on-state resistance (RDS(on)) and gate charge (Qg). The low figure-of-merit (FOM = RDS(on) × Qg) translates directly into reduced switching and conduction losses in high-frequency SMPS, where every milliohm of RDS(on) saved improves efficiency by measurable percentage points at high load. Typical applications include synchronous rectification in 12 V buck and POL converters, hot-swap and OR-ing circuits in server/telecom power systems, battery protection and load switching in 1-3S lithium-ion packs, and motor drive low-side switches in industrial BLDC/robotic systems. When designing with the BSC011N03LSIATMA1, ensure VGS is driven to at least 10 V for full enhancement. The exposed drain pad must be soldered to a sufficiently large copper pour (recommended ≥100 mm² on a 4-layer board) to keep junction temperature below 150 °C under worst-case load. This page synthesizes distributor pricing, drop-in same-brand alternatives, thermal design guidance, and pinout information not consolidated in the manufacturer datasheet, optimized for engineers selecting 30 V power MOSFETs for DC-DC and hot-swap designs.
BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
Infineon BSC011N03LSTATMA1 is an N-Channel OptiMOS power MOSFET rated at 30V VDS, 100A continuous drain current at TC=25C, and 1.1 mOhm max on-resistance (typical 0.9 mOhm at VGS=10V). It is housed in a compact PG-TDSON-8 FL surface-mount package that combines a small footprint with an exposed drain pad for low thermal resistance. The part is part of Infineon's OptiMOS family targeting high-efficiency synchronous rectification, OR-ing, and hot-swap applications. Key electrical ratings include 39A continuous at TA=25C (3W board dissipation), 115W power dissipation at TC=25C, VGS +/-20V maximum, and an operating junction temperature range of -55C to +150C. Threshold voltage is 2V typical. A power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is a voltage-controlled majority-carrier device that switches resistive loads by modulating channel conductance under the gate oxide. N-channel power MOSFETs are the dominant switching element in low-voltage (<100V) synchronous buck converters, motor drives, and load switches, sitting in the device hierarchy MOSFET -> FET -> transistor -> discrete semiconductor. The "OptiMOS" low-voltage family from Infineon emphasizes low RDS(on) per unit area, low gate charge (Qg typ 72 nC), and low Figure of Merit (FOM = RDS(on) x Qg) to maximize DC-DC converter efficiency. Distinguishing features include an ultra-low 1.1 mOhm RDS(on) at 10V VGS that minimizes conduction loss, an integrated Schottky-like body diode optimized for synchronous rectification, and the TDSON-8 FL package with an exposed cooling pad delivering roughly 1C/W junction-to-case thermal resistance. The 72 nC total gate charge enables MHz switching with low driver loss, and the +/-20V VGS rating gives margin against gate-driver transients on 12V rails. The internal cell structure uses Infineon's trench MOSFET technology to shrink the cell pitch below 1 micron, packing more silicon per mm2 and driving RDS(on) into the sub-mOhm range without sacrificing avalanche ruggedness. The device is rated for 100% UIS (avalanche) testing. Typical applications include synchronous rectification in 12V buck converters for server/datacenter VRMs, battery protection in battery management systems (BMS), OR-ing diodes in redundant -48V telecom supplies, motor drive H-bridges below 30V, and hot-swap controllers in enterprise SSDs and network switches. When designing with this part, observe strict gate-drive layout: keep the gate loop (driver -> gate -> source) under 1 cm to suppress ringing, and place a 10-100 Ohm gate resistor between the driver and the gate pin to damp the miller plateau. The exposed pad MUST be soldered to a copper area of at least 6 cm2 to stay within the datasheet SOA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC014N04LS - 40V 1.4mOhm N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC014N04LS is an N-channel power MOSFET from the OptiMOS 5 family with a 40 V drain-source voltage rating, a maximum on-state resistance of 1.4 mOhm, and a maximum continuous drain current of 198 A, housed in a SuperSO8 5x6 (TDSON-8FL) surface-mount package. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the component hierarchy, the BSC014N04LS belongs to the transistor family, specifically the N-channel enhancement-mode MOSFET class, which sits under power semiconductors and power management. These devices are the workhorses of DC-DC converters, motor drives, and load switches because they combine very low conduction loss with fast switching. Key features of the BSC014N04LS include industry-leading low RDS(on) of 1.4 mOhm max, which minimizes conduction losses (I2R) in high-current paths; a maximum drain current of 198 A at case temperature per datasheet conditions; and OptiMOS 5 thin-wafer technology, which Infineon states delivers 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices. The low gate charge also reduces gate-drive losses in fast-switching topologies. Technically, the device uses Infineon advanced thin-wafer OptiMOS 5 process technology, optimizing the trade-off between specific on-resistance and switching charge. The TDSON-8FL package with exposed drain pads provides excellent thermal performance: the datasheet thermal rating assumes mounting on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm2 of one-layer, 70 um copper for the drain connection. Absolute maximum ratings are specified at 25 C case temperature, and de-rating applies at higher case temperatures per the datasheet derating diagrams. Typical applications include synchronous rectification in server VRM and telecom DC-DC converters, high-current load switches, motor drive half-bridges, and battery-powered power paths operating from 12 V or 24 V rails, where ultra-low conduction loss and compact footprint are decisive. Design consideration: at 198 A-class currents, PCB copper area and busbar design dominate thermal behavior; verify RDS(on) at your actual gate-drive voltage and junction temperature, since 1.4 mOhm is a 25 C, 10 V VGS maximum figure. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon BSC014N04LSATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 platform, rated for 40 V drain-source voltage, 32 A continuous drain current (Ta) / 100 A continuous drain current (Tc), and a maximum on-resistance of 1.4 mOhm at 10 V VGS, housed in a SuperSO8 5x6 (TDSON-8 FL) surface-mount package. It is optimized for synchronous rectification in switched-mode power supplies (SMPS) and for high-current low-voltage DC-DC conversion. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which conduction between drain and source is enabled by applying a positive gate-source voltage. Modern trench MOSFETs such as OptiMOS 5 are widely used as the low-side synchronous rectifier in buck converters and as the high-side/low-side switch in half-bridge topologies, where their low R_DS(on) directly determines conduction loss. Compared with earlier planar generations, OptiMOS 5 achieves about 15% lower R_DS(on) and 31% lower figure of merit (R_DS(on) x Qg), making it a representative of the latest low-voltage power-MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management building block. Key features of the BSC014N04LSATMA1 include a 1.4 mOhm maximum R_DS(on) at VGS=10 V, an ultra-low gate charge for fast switching, an exposed SuperSO8 leadframe for top-side cooling, and 2.5 W power dissipation at Ta / 96 W at Tc. The thin-wafer process enables simultaneously low conduction loss and low switching loss, which is critical at high switching frequencies (300 kHz to 1 MHz) typical of modern VRM and POL converters. The architecture relies on an advanced thin-wafer trench cell, which minimizes the cell pitch while preserving avalanche ruggedness. The result is a figure of merit (FOM = R_DS(on) x Qg) among the lowest in the 40 V class, reducing both driver losses and thermal rise. The SuperSO8 (TDSON-8 FL) package has an exposed pad that doubles as both the drain connection and a thermal path, allowing the PCB copper pour to sink heat directly into the board. Typical applications include synchronous rectification in 12 V server and telecom DC-DC converters, 24 V industrial point-of-load regulators, USB-PD and e-mobility auxiliary rails, motor-drive H-bridges, and battery-management system (BMS) protection. Designers typically select this part when conduction loss dominates and switching frequency exceeds 250 kHz. When designing with the BSC014N04LSATMA1, place a 100 nF ceramic bypass capacitor close to the gate pin to suppress parasitic turn-on caused by the drain-to-gate Miller capacitance. Confirm that the gate-drive voltage swings cleanly between 0 V and 10 V; a 4.5 V drive is acceptable for logic-level applications, but full enhancement requires VGS = 10 V to reach the rated 1.4 mOhm R_DS(on). This page synthesizes Infineon's official datasheet values with distributor pricing, verified drop-in equivalents, and practical PCB layout notes not found in the standalone datasheet.
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
The Infineon BSC014N04LSIATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 thin-wafer platform, rated at 40 V VDS and delivering up to 100 A continuous drain current at Tc in an 8-pin TDSON-8 FL (PG-TDSON-8 FL) surface-mount package. It combines an industry-leading 1.4 mOhm maximum on-resistance with a low figure-of-merit (RDS(on) x Qg), targeting high-efficiency synchronous rectification and fast-switching converter stages where both conduction and switching losses dominate the thermal budget. An N-channel MOSFET is a voltage-controlled semiconductor switch in which majority carriers are electrons flowing through an n-type channel; turning the gate on allows current to flow from drain to source, while turning the gate off blocks it. The OptiMOS 5 platform is the current-generation Infineon trench MOSFET family for sub-100 V applications, sitting within the broader taxonomy of power MOSFETs -> discrete semiconductors -> power management switches. This part belongs to the synchronous-rectifier and OR-ing sub-categories where low RDS(on) and small gate charge directly translate into higher system efficiency. Key features include a 1.4 mOhm max RDS(on) at VGS=10 V, 96 W continuous power dissipation at Tc, and an exposed-drain pad (FL) for direct thermal coupling to the PCB copper. The TDSON-8 FL footprint is footprint-compatible with industry-standard 5x6 mm Power-SO8/SO-8FL land patterns, simplifying second-source sourcing. Typical gate charge and Miller charge values are optimized for hard-switched and soft-switched topologies operating in the 100 kHz to 1 MHz range, and the part is rated for operation across industrial temperature grades. Infineon claims roughly 15% lower RDS(on) and 31% lower figure of merit compared with prior-generation alternatives at the same silicon area. The architecture uses a shielded-gate trench cell that minimizes Miller capacitance and gate charge while preserving a high inrush SOA. Compared with planar MOSFETs of equivalent RDS(on), the part typically delivers faster switching edges and lower output charge (Qoss), which reduces resonant-tank circulating losses in LLC and totem-pole PFC stages. The thin-wafer approach also lowers the thermal resistance from junction to case, supporting the 96 W rating on a moderately sized PCB copper pad. Typical applications include synchronous rectification in 12 V SMPS for server, telecom, and datacom rails, OR-ing FETs in redundant power architectures, motor-drive low-side switches in 24 V industrial systems, and high-current USB-PD / e-fuse paths. The combination of low RDS(on), small package, and high pulsed-current capability also makes it attractive for battery-protection and hot-swap circuits in 1- to 4-cell Li-ion packs. Designers using this part should follow Infineon's TDSON PCB layout guideline: stitch multiple thermal vias under the exposed pad, use wide copper planes on source, and keep the gate-loop loop area minimal to control switching ringing.
BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC014N04LSTATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 40 V VDS with an industry-leading maximum on-resistance of 1.45 mΩ, packaged in the SuperSO8 5x6 (PG-TDSON-8 FL) surface-mount outline. The part is specified for 33 A continuous drain current at TA=25°C and 100 A at TC=25°C, with power dissipation of 3 W (TA) and 115 W (TC), suiting it for high-current switching paths. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field to modulate the conductivity of a semiconductor channel. N-channel MOSFETs such as this part are the dominant building blocks of synchronous buck converters, half-bridge stages, and hot-swap controllers because their low R DS(on) minimizes conduction loss. The OptiMOS 5 process family represents Infineon's fifth-generation trench MOSFET technology, positioned within the broader power semiconductor hierarchy: MOSFET → power transistor → discrete semiconductor → power management. Key features include the SuperSO8 5x6 package that delivers 1.45 mΩ max R DS(on) at VGS=10 V with enhanced thermal rating, integrated Schottky-like body diode characteristics, and a thermally efficient exposed pad (PG-TDSON-8 FL) footprint. The die is optimized for switching frequencies from 100 kHz to 1 MHz, balancing gate charge and output capacitance for fast turn-on/turn-off transitions. Compared to the previous OptiMOS 3 generation, OptiMOS 5 reduces R DS(on) by approximately 30 percent at equivalent die size, allowing either smaller magnetics or higher efficiency at the same footprint. Typical applications include 12 V-24 V synchronous buck converters in telecom and server VRMs, OR-ing and hot-swap circuits in 48 V distributed-power architectures, motor drive half-bridges in eMobility tools and light electric vehicles, and USB-PD / e-marked cable protection switches. The low R DS(on) makes it particularly attractive for high-current, low-voltage power paths where conduction loss dominates the efficiency budget. When designing with this device, calculate both conduction loss (I² × R DS(on)) and switching loss (½ × VDS × ID × (tr + tf) × fSW) to ensure the total dissipation stays below the derated continuous rating. The exposed thermal pad must be soldered to a copper pour of at least 1 square inch to achieve the rated 1.5°C/W RthJC thermal performance.
BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon
Infineon BSC014N06NSATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated at 100 A continuous drain current (Tc) and 30 A (Ta), housed in a SuperSO8 / PG-TDSON-8-17 (5x6 mm) surface-mount package. It delivers an ultra-low typical on-resistance of 1.4 mOhm at VGS=10 V and supports +/-20 V gate-source voltage, with 2.5 W (Ta) / 156 W (Tc) power dissipation. According to Infineon's OptiMOS 5 datasheet, this part targets high-efficiency synchronous rectification, DC-DC conversion, and motor-drive stages where lowest RDS(on) x Qg FOM directly reduces conduction and switching losses. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled device that conducts current between drain and source when a sufficient positive gate-source voltage is applied. Power MOSFETs sit within the power-semiconductor hierarchy: MOSFET -> discrete semiconductor -> power management -> semiconductor, and are the dominant switching element in sub-200 V, sub-100 kHz SMPS, motor-control, and hot-swap designs because they switch faster, are easier to drive, and exhibit lower conduction loss than bipolar devices at low voltages. Key features include 1.4 mOhm typical RDS(on) (10 V VGS), +/-20 V maximum gate-source voltage with +/-10 V recommended drive, 60 V drain-source breakdown, and a SuperSO8 5x6 mm footprint that minimizes PCB area and provides a low thermal resistance path via the exposed drain pad. The OptiMOS 5 technology platform improves Figure of Merit (RDS(on) x Qg) by typically 30-50% versus prior OptiMOS generations, directly translating to lower switching losses at high frequency. Internally the device uses a shielded-gate trench MOSFET cell architecture optimized for low output charge (Qoss) and low gate charge (Qg). The 5x6 mm SuperSO8 footprint is footprint-compatible with industry-standard Power-SO8 / LFPAK packages from other vendors, simplifying second-sourcing. The exposed drain pad provides direct PCB heatsinking, enabling 156 W Tc dissipation with proper thermal via design. Typical applications include synchronous-rectifier stages in 48 V telecom and server buck converters, high-current OR-ing and hot-swap controllers, brushless DC motor drives, battery management protection FETs in 12 V/24 V e-mobility, and Class-D audio amplifier output stages. Each application benefits from the very low RDS(on) and the small SuperSO8 footprint. When designing with this part, ensure the gate driver can source/sink adequate peak current (Qg and Qgd are key) and that the PCB layout uses sufficient copper area and thermal vias under the exposed pad to achieve the rated 156 W Tc dissipation. Above 50 A continuous, derate aggressively or use a smaller SuperSO8 footprint than DPAK alternatives.
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
The Infineon BSC014NE2LSIATMA1 is an N-channel 25 V OptiMOS power MOSFET in a PG-TDSON-8-7 (SuperSO8) surface-mount package, rated for 33 A continuous drain current at 25 °C case-free ambient and 100 A pulsed at case temperature, with on-state resistance of 1.4 mOhm at 10 V gate drive. It belongs to Infineon's OptiMOS 25V product family, engineered for synchronous rectification, buck/boost DC-DC converters, and OR-ing switches where ultra-low RDS(on) and small footprint are critical. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (here, a metal-oxide layer) to modulate majority-carrier conduction between source and drain. N-channel enhancement-mode MOSFETs like the BSC014NE2LSIATMA1 are the workhorse of switched-mode power conversion: they sit in the low-side or high-side position of a buck, boost, or half-bridge topology and dissipate I²·RDS(on) watts during conduction. The OptiMOS family is hierarchically classified as: power MOSFET -> voltage-controlled switch -> discrete semiconductor -> power management building block. Headline specifications include VDS = 25 V, VGS = ±20 V max, continuous ID = 33 A (Ta) / 100 A pulsed (Tc), and RDS(on) = 1.4 mOhm typical at VGS = 10 V. The PG-TDSON-8-7 footprint measures approximately 3.3 mm × 3.3 mm with an exposed thermal pad that drops junction-to-case thermal resistance to roughly 1 °C/W when properly soldered to a copper pour. The part is RoHS compliant, lead-free, and rated for -55 °C to +150 °C operating junction temperature. Architecturally, the device uses Infineon's trench-gate OptiMOS cell structure with a stripe-style gate layout that optimizes cell density while keeping gate charge (Qg) low. Lower Qg improves switching losses at high frequencies: a 1 MHz synchronous buck sees measurable efficiency gains when Qg drops below 50 nC, which is achievable with this family. The integrated gate-source ESD protection and avalanche-rated body diode (EAS typically specified in the datasheet) further simplify design-in for hot-swap and motor-drive applications. Typical applications include synchronous rectification in 12 V VRM and POL converters for servers and telecom boards, high-current buck regulators in graphics cards and FPGA power rails, low-voltage OR-ing FETs in redundant power supplies, and battery protection / load switches in 1S-3S Li-ion packs. Designers value the part for its combination of extremely low RDS(on)·area figure-of-merit and a footprint that fits where DPAK alternatives cannot. When designing with this part, prioritize a large copper pour under the exposed pad to keep RthJA below 50 °C/W; at 30 A continuous with 1.4 mOhm RDS(on), the part dissipates roughly 1.3 W, requiring thermal relief to maintain safe Tj. Keep the gate-drive loop tight and use a 10 ohm gate resistor to suppress ringing. This page synthesizes distributor pricing, same-brand OptiMOS alternatives, and PCB-layout notes that complement the manufacturer datasheet for faster design-in.
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon BSC015NE2LS5IATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 25V technology platform, rated at 25 V VDS max with continuous drain current of 33 A at Ta and 100 A at Tc, and housed in the compact PG-TDSON-8-6 (SuperSO8 5x6) surface-mount package. Designed for highest power density and energy efficiency in both standby and full-load operation, this device targets synchronous rectification, DC-DC conversion, and high-current switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and condition power in electronic systems. N-channel MOSFETs are the dominant choice for low-side and synchronous-rectifier positions in switch-mode power supplies because their higher carrier mobility delivers lower on-resistance per unit area than equivalent P-channel parts. Within the power-semiconductor hierarchy, this MOSFET sits under: power MOSFET -> discrete semiconductor -> power management. OptiMOS 5 represents Infineon's fifth-generation optimized trench process that minimizes FOM (Figure of Merit = RDS(on) x Qg) for the 25V class. Key specifications include a maximum drain-source on-resistance of 1.5 mOhm at VGS = 10 V (per Infineon part-page data), ultra-low gate charge for high-frequency operation, and a power dissipation rating of 2.5 W at Ta and 50 W at Tc. The PG-TDSON-8-6 package exposes the die on a large thermal pad, allowing direct PCB copper heatsinking and keeping junction temperature rise modest at typical load currents. This combination of low RDS(on) and small footprint is the central value proposition. The OptiMOS 5 process technology uses an advanced trench cell architecture optimized for both low conduction loss and low switching loss, achieving benchmark FOM figures in the 1.5 mOhm-class 25V market. The device is avalanche-rated and qualified for industrial and automotive environments (subject to specific Q-grade variant). Typical applications include synchronous rectification in telecom DC-DC bricks, CPU/GPU VRM phases, server and datacom POL converters, motor drive half-bridges, hot-swap and OR-ing switches, and automotive 12V bus converters. Design consideration: ensure gate-drive voltage is 10 V for full RDS(on) rating; 4.5 V drive increases RDS(on) significantly. A low-inductance PCB layout with kelvin-source connection is required to realize the rated switching performance.
BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon
The Infineon BSC016N06NSATMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 60 V drain-source voltage, 100 A continuous drain current (Tc), and an ultra-low 1.6 mΩ maximum on-resistance, housed in a compact PG-TDSON-8 FL surface-mount package. Built on Infineon's advanced OptiMOS™ 5 60 V technology platform, this device targets high-efficiency synchronous rectification, DC-DC conversion, and motor-control applications where conduction and switching losses dominate. An N-channel power MOSFET is a voltage-controlled semiconductor switch whose drain-source channel conducts when a positive gate-source voltage (VGS) is applied above its threshold. MOSFETs are a subset of field-effect transistors (FETs) and the dominant switching element in modern switched-mode power supplies (SMPS), where they sit within the broader power-management IC ecosystem as discrete synchronous rectifiers or low-side/high-side switches. Key features include 71 nC total gate charge (Qg), a logic-level-compatible 10 V gate drive optimized threshold, 2.5 W power dissipation at TA, and 139 W at TC, enabling either compact PCB designs or robust thermal headroom in industrial modules. The PG-TDSON-8 FL package exposes the drain via the thermal pad for low thermal resistance (θJA), which is critical when dissipating >5 W continuously. The OptiMOS™ 5 process trades a small increase in gate charge for a substantial reduction in RDS(on) and output capacitance (Coss), giving better figures of merit (FOM = RDS(on) × Qg) than older OptiMOS™ 2/3 generations. Designers benefit from lower conduction losses at high load and reduced switching losses at high frequency, especially above 100 kHz. Typical applications include 48 V DC-DC converters in telecom brick supplies, solar microinverters, server and datacom point-of-load (POL) regulators, motor-drive half-bridges, and battery protection circuits in e-mobility and power tools. When designing with this device, select a gate driver with adequate sink/source current (≥1 A peak) to charge the 71 nC Qg quickly. Keep the gate-drive loop tight to minimize ringing, and provide sufficient copper area on the thermal pad to keep Tj below 125 °C at full load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single source for parametric context, supply-chain breadth, and selection guidance.
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon BSC016N06NSTATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 60V drain-to-source voltage, with a maximum on-resistance of 1.6 mOhm at VGS=10V and continuous drain current up to 100A (Tc) / 31A (Ta), housed in a SuperSO8 (PG-TDSON-8 FL) package. The device combines Infineon's latest OptiMOS 5 silicon technology with an enhanced SuperSO8 package that improves thermal performance over the standard SO-8 footprint, enabling higher power density and improved robustness in switching applications. The part ships in tape and reel packaging suitable for high-volume surface-mount production lines. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field applied to the gate terminal to control current flow between drain and source. MOSFETs belong to the FET (field-effect transistor) family, sitting within discrete semiconductors, and serve as the primary switching element in DC-DC converters, motor drives, synchronous rectification, hot-swap circuits, and load management systems. The 'OptiMOS' platform is Infineon's designation for its optimized trench MOSFET process family, optimized for low RDS(on) x Qg figure-of-merit, fast switching, and low conduction losses. Key electrical characteristics of the BSC016N06NSTATMA1 include an ultra-low RDS(on) of 1.6 mOhm at 10V VGS, low gate charge Qg optimized for high-frequency operation, and a logic-level capable threshold range. The SuperSO8 package provides reduced thermal resistance versus standard SO-8, allowing the device to dissipate 167W of power at 25C case temperature versus the typical 3W at 25C ambient. This makes the part suitable for both high-current industrial applications and space-constrained consumer designs. From an architectural perspective, the OptiMOS 5 process uses an advanced trench cell structure with a refined epitaxial layer that minimizes on-resistance per unit silicon area. The enhanced SuperSO8 (TDSON-8 FL) lead-frame reduces source-inductance and improves heat transfer through the exposed pad, which is critical for hard-switching topologies such as buck converters and half-bridges where switching losses dominate total dissipation. Typical applications for the BSC016N06NSTATMA1 include synchronous rectification in 48V telecom DC-DC converters, hot-swap and OR-ing circuits in server power distribution, motor drive stages in 24V industrial systems, low-voltage battery management protection, and USB-PD / high-current Type-C sink controllers. The combination of low RDS(on) and SuperSO8 thermal performance makes it well-suited to designs where board area is constrained but continuous current handling must remain high. When designing with this device, ensure that the gate-drive voltage reaches the full 10V to achieve the specified low RDS(on). A gate-driver such as the EiceDRIVER 1EDN71 family from Infineon is recommended to deliver clean, fast edges. Pay close attention to PCB layout of the source-kelvin connection to minimize the switching loop inductance, especially at high di/dt. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet, offering an integrated engineering view of the BSC016N06NSTATMA1.
BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon
The Infineon BSC018N04LSGATMA1 is an N-channel logic-level power MOSFET built on Infineon's OptiMOS 3 technology, rated for 40 V VDS and delivering up to 100 A continuous drain current at TC=25°C with an extremely low maximum on-resistance of 1.8 mΩ at VGS=10 V. It is housed in the compact 8-pin PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package with an exposed thermal pad for low RθJA. According to the manufacturer datasheet, the part is qualified to JEDEC standards, is Pb-free / RoHS compliant, and is 100% avalanche tested, making it a robust choice for high-current switching power applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that converts an input gate-source voltage into a low-loss conduction path between drain and source. Power MOSFETs sit at the bottom of the power-conversion hierarchy: they are the active switches used inside switching regulators (DC-DC converters), motor drivers, and load switches, which in turn form the power management subsystem of any electronic product. The OptiMOS 3 family specifically optimizes the FOM (figure of merit, Qg × RDS(on)) for high-frequency SMPS operation, balancing conduction and switching losses. Key features include an ultra-low 1.8 mΩ maximum RDS(on) at 10 V VGS, logic-level drive compatibility from 4.5 V VGS, and a Superior thermal resistance package rated for 2.5 W at TA and 125 W at TC. The 100% avalanche-tested rating ensures robust operation under inductive switching transients, and the Pb-free, RoHS-compliant, halogen-free termination meets modern environmental standards. The SuperSO8 package provides a low-profile 5x6 mm footprint compatible with standard Power-SO8 PCB land patterns. Typical applications include DC-DC synchronous rectification in server and telecom SMPS, hot-swap and OR-ing circuits in 12 V/24 V distributed-power systems, high-current load switches, motor-drive H-bridges (low-side), and battery-protection circuits in power tools and e-mobility. The combination of low RDS(on) and small package enables compact, high-efficiency designs. When designing with this part, gate-drive strength matters: although rated 4.5 V minimum VGS, full RDS(on) specification requires 10 V VGS. PCB layout must maximize copper under the exposed pad to achieve the rated thermal performance.
BSC018NE2LSATMA1 - 25V 1.8mΩ OptiMOS N-Ch MOSFET | Infineon
The Infineon BSC018NE2LSATMA1 is an N-channel OptiMOS power MOSFET rated at 25V VDS with a 1.8 mΩ typical on-resistance at VGS=10V, delivering up to 100A continuous drain current (Tc) in a compact PG-TDSON-8-1 (8-PowerTDFN) surface-mount package. It is part of Infineon's OptiMOS 25V product family, which targets highest power density and energy efficiency in discrete switching converters and OR-ing applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in switching power supplies (SMPS), motor drives, load switches, and battery protection circuits. Compared with older planar MOSFET technologies, OptiMOS devices use a trench gate structure that lowers on-resistance per unit silicon area and reduces gate charge (Qg ≈ 39 nC at 10V on this part), simultaneously improving conduction loss and switching loss. The MOSFET belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor -> electronic component. Key features include a 25V drain-source breakdown (suited to 12V bus rails with strong transient margin), ultra-low 1.8 mΩ RDS(on) at 10V VGS for minimum I²R conduction loss, and a low 2800 pF output capacitance (Coss at 12V VDS) that limits switching-node ring and dv/dt stress. The 8-PowerTDFN package provides an exposed thermal pad, giving theta_JA suitable for 2.5W (Ta) and 69W (Tc) power dissipation envelopes. Technically, the OptiMOS 25V cell uses an advanced trench-gate process with low-resistance source metallization, yielding both low RDS(on) and robust avalanche ruggedness. The low Qg (39 nC) and low Qgd reduce driver losses and ease gate-drive design, allowing the part to switch cleanly from a standard gate-driver IC at 10V. The combination of low FOM (RDS(on) × Qg) makes it competitive with newer generations on dynamic performance. Typical applications include high-current synchronous buck converters in 12V server and telecom rails, OR-ing FETs in redundant -48V/-54V telecom rectifier outputs (de-rated to 25V), battery management / protection FETs in low-voltage packs, hot-swap / eFuse controllers in 12V distribution, and high-current DC motor drivers in industrial automation. The combination of low RDS(on) and small footprint is especially valuable in space-constrained point-of-load (POL) modules. When designing with BSC018NE2LSATMA1, observe the gate-drive voltage of 10V (logic-level compatibility at 4.5V is not specified) and respect the SOA at high di/dt. Use Kelvin-source PCB layout when possible to mitigate source-inductance-induced gate ringing. The exposed pad must be soldered to a sufficiently large copper pour to keep junction temperature within the 150 °C limit. This page synthesizes distributor pricing, drop-in OptiMOS alternatives, and practical thermal/layout notes not aggregated in the Infineon datasheet alone, helping power design engineers shorten part-selection cycles.