2MBI200UD-120-51 - 1200V 200A U-Series IGBT Module | Fuji Electric
MPN: 2MBI200UD-120-51 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $285 | $285.00 |
| 10 | $268 | $2,680.00 |
| 50 | $250 | $12,500.00 |
| 100 | $235 | $23,500.00 |
| 500 | $215 | $107,500.00 |
2MBI200UD-120-51 Overview
What is an IGBT module? An Insulated-Gate Bipolar Transistor (IGBT) module is a power-semiconductor building block that combines the voltage-driven gate of a MOSFET and the high-current/low-saturation-voltage conduction of a BJT. IGBT modules belong to the broader hierarchy of power transistors > discrete semiconductors > power conversion. They are the workhorse switching element in medium- to high-power converters (kW to MW class) such as motor drives, solar inverters, UPS systems, and industrial welders, where a single discrete device cannot handle the required current or thermal load.
Key features include 1200V collector-emitter voltage, 200A continuous collector current at Tc = 25°C, voltage-driven gate input for simple MOSFET-style control, and a low-inductance module structure that reduces switching loss and voltage overshoot. The U-series targets high-speed switching frequencies and is optimized for industrial inverter applications.
Architecturally, the U-series uses a planar NPT (non-punch-through) or field-stop trench gate cell structure with an anti-parallel FRED (fast recovery epitaxial diode) co-packaged in each switch position. The two-pack module integrates two IGBT/FRED half-bridge positions, enabling a single module to build a full-bridge or three-phase leg. Thermal design uses an isolated copper baseplate with thermal resistance in the low 0.1 °C/W range, allowing direct mounting to a heatsink.
Typical applications include AC and DC servo drive amplifiers, uninterruptible power supplies (UPS), industrial welding machines, string inverters for solar power, and general-purpose AC motor drives. The 200A rating makes it well-suited for medium-power three-phase inverter stages in the 50-100 kW class.
Design considerations for the 2MBI200UD-120-51 include proper gate-driver design (typically +15V/-8V or +15V/-15V), low-stray-inductance DC-link layout, and adequate heatsinking to keep Tj below the 150°C maximum. The mounting torque specification is 2.5-3.5 N·m (M5 or M6) and terminals 3.5-4.5 N·m (M6) per the manufacturer datasheet.
This page synthesizes distributor availability, drop-in alternatives, and practical thermal notes not collected in the Fuji datasheet PDF alone.
Drop-in alternatives for 2MBI200UD-120-51 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2MBI200UD-120
✅ Drop-In📋 Reference alternative (not in catalog)
2MBI200N-120
✅ Drop-In📋 Reference alternative (not in catalog)
2MBI200S-120
✅ Drop-In📋 Reference alternative (not in catalog)
TRN-00715
✅ Drop-In📋 Reference alternative (not in catalog)
PK55FG40
✅ Drop-In📋 Reference alternative (not in catalog)
2MBI200UD-120-51 Maximum Ratings & Electrical Characteristics
| Manufacturer | Fuji Electric |
| Series | U-Series IGBT Module |
| Configuration | Two-pack (half-bridge) IGBT module |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (Ic @ Tc=25°C) | 200 A |
| Switching Frequency (typ.) | High-speed switching (U-series optimized) |
| Gate Drive Type | Voltage drive |
| Module Structure | Low inductance |
| Operating Junction Temperature | -40°C to +150°C (typical IGBT max) |
| Mounting Torque (heatsink) | 2.5 to 3.5 N·m (M5 or M6) |
| Terminal Torque | 3.5 to 4.5 N·m (M6) |
| Package Type | Standard U-series IGBT module chassis-mount |
2MBI200UD-120-51 Pin Configuration
| Pin 1 | C1 (Collector, upper switch) — DC+ collector terminal of upper IGBT |
| Pin 2 | E1 (Emitter, upper switch) — Output / AC terminal - midpoint of half-bridge |
| Pin 3 | G1 (Gate, upper switch) — Gate drive input for upper IGBT |
| Pin 4 | C2 (Collector, lower switch) — Midpoint / AC terminal - collector of lower IGBT |
| Pin 5 | E2 (Emitter, lower switch) — DC- emitter terminal of lower IGBT |
| Pin 6 | G2 (Gate, lower switch) — Gate drive input for lower IGBT |
| Pin 7 | Aux E1 (Auxiliary emitter) — Kelvin connection for upper IGBT gate drive return |
| Pin 8 | Baseplate / Heatsink — Isolated mounting surface for thermal dissipation (M5/M6 mounting, 2.5-3.5 N·m) |
Safe Operating Area (typical U-series, collector current vs collector-emitter voltage)
Typical Applications
2MBI200UD-120-51 is suitable for 6 applications: Three-Phase Solar String Inverter, AC Servo Drive Amplifier, Uninterruptible Power Supply (UPS), Industrial Welding Machine, General-Purpose AC Motor Drive (VFD), DC Servo Drive Amplifier.
Three-Phase Solar String Inverter
The 2MBI200UD-120-51 is well-suited to three-phase string-inverter power stages in the 50-100 kW class. Its 1200V VCES comfortably covers 1000V DC-link operation from series-stacked PV strings, and the 200A continuous Ic rating supplies three-phase AC outputs at industrial power levels. The U-series high-speed switching characteristic minimizes switching loss at the 4-16 kHz PWM frequencies typical of modern string inverters, while the low-inductance internal layout reduces voltage overshoot and EMI at the high di/dt of trench-gate IGBTs. Place the module on an aluminum heatsink with the recommended 2.5-3.5 N·m mounting torque and a 100-200 N thermal interface material pad to keep Tj below 125°C at full power.
Recommended
AC Servo Drive Amplifier
The 2MBI200UD-120-51 is widely deployed as the power-stage switch in industrial AC servo drives, where its 1200V/200A U-series rating supports 400-480V AC line operation with adequate voltage margin for regenerative braking transients. The voltage-driven gate input simplifies the gate-driver design versus current-driven Darlington alternatives, allowing servo amplifier designers to use standard +15V/-8V or +15V/-15V IGBT gate-drive ICs. The two-pack configuration lets one module build a complete inverter leg with a low-inductance internal bus structure, which is essential for the high di/dt conditions seen in high-bandwidth servo current loops. Designers should pair the module with a low-ESR DC-link film capacitor bank to limit ripple current.
Recommended
Uninterruptible Power Supply (UPS)
In double-conversion online UPS systems in the 30-80 kVA range, the 2MBI200UD-120-51 serves as the inverter-stage switch that converts the DC bus back to clean AC output during normal operation. The U-series low VCE(sat) keeps inverter-stage conduction loss manageable at the 200A continuous current level, supporting high UPS efficiency at full load. Voltage input bus-down design also enables straightforward parallel operation for higher-power UPS systems where N+1 module redundancy is required. The low-inductance module structure reduces voltage overshoot during high-current load steps, which is critical for the dynamic response of UPS systems feeding sensitive IT or medical loads.
Recommended
Industrial Welding Machine
The 2MBI200UD-120-51 is commonly used in the inverter stage of MIG/TIG and stick welding power sources, where its 1200V/200A rating supports the high-peak-current pulses required for arc ignition and stable weld pool formation. The voltage-driven gate input allows the welding inverter's control board to switch the module at the 10-20 kHz range typical of modern welding inverters, reducing the size and weight of the output filter magnetics compared with line-frequency welding designs. The rugged U-series construction tolerates the repetitive short-circuit and overload conditions that occur during arc strikes and electrode shorting, making it a reliable choice for industrial welding environments.
Recommended
General-Purpose AC Motor Drive (VFD)
The 2MBI200UD-120-51 is widely used as the inverter-stage IGBT in general-purpose variable-frequency drives (VFDs) for industrial induction motors in the 50-100 HP class. Its 1200V VCES rating handles 480V AC line input via a standard diode-rectifier front end with comfortable voltage margin for regen transients. The U-series high-speed switching characteristic enables switching frequencies up to 15-20 kHz, which keeps motor audible noise low and reduces output filter requirements. The two-pack module configuration lets one module build one inverter phase leg, simplifying PCB and bus-bar layout versus discrete IGBT solutions, and the Fuji U-series pedigree gives VFD designers a well-characterized and broadly supported part.
Recommended
DC Servo Drive Amplifier
In four-quadrant DC servo amplifiers used in machine tools, robotics, and precision positioning systems, the 2MBI200UD-120-51's two-pack configuration lets one module build a complete H-bridge phase leg with a low-inductance internal bus. The 1200V rating supports high-voltage DC bus operation in industrial servo amplifiers, while the 200A continuous current capability handles the peak torque demands of large servo motors during acceleration. The voltage-driven gate input pairs naturally with modern optically-isolated gate-driver ICs, enabling safe high-side drive with reinforced isolation for industrial safety compliance. Use a low-ESR electrolytic or film DC-link bank to keep bus ripple below 5% under peak transient loads.
Recommended
Recommended Products Summary
Engineering reference data for 2MBI200UD-120-51 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2MBI200UD-120 | 2MBI200N-120 | 2MBI200S-120 | TRN-00715 | PK55FG40 |
|---|---|---|---|---|---|---|
| Brand | Fuji Electric | Fuji Electric | Fuji Electric | Fuji Electric | Mitsubishi Electric | SanRex |
| Package | U-series two-pack module (same footprint as -51 option variant) | U-series two-pack module - same | U-series two-pack module - same | U-series two-pack module - same | Mitsubishi transistor module (FR-A700 drive equivalent) | SanRex two-pack module (cross-referenced equivalent) |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Series / Switching Optimization | U-series (high-speed switching) | U-series (same) | N-series (lower conduction loss) | S-series (lower VCE(sat)) | Mitsubishi drive platform | SanRex platform |
| Voltage Drive Type | Yes (MOSFET-style gate) | Yes | Yes | Yes | Yes (Mitsubishi drive module) | Yes |
| Low-Inductance Module Structure | Yes | Yes | Yes | Yes | Yes (drive-grade) | Yes |
Key Differentiators
- U-series high-speed switching optimization (vs 2MBI200N-120)
- Fuji U-series production longevity (vs TRN-00715)
- Broad cross-reference ecosystem (vs PK55FG40)
Design Notes
The 2MBI200UD-120-51 is rated for 200A continuous collector current at Tc=25°C, and the allowable current derates linearly toward zero at Tj(max). At 100A continuous in a typical inverter application with Tc=80°C, power dissipation is dominated by VCE(sat) conduction loss (estimated: 100A × ~2.2V = ~220W per switch position). Use an aluminum heatsink with Rth(s-a) ≤ 0.05 °C/W for natural convection or ≤ 0.02 °C/W with forced air at full power to keep Tj below 125°C. Apply a thermal interface material (TIM) pad with thermal conductivity ≥ 3 W/m·K and torque the module to 2.5-3.5 N·m to maintain low thermal resistance at the baseplate interface.
Use a low-inductance DC-link bus structure with laminated bus bars or a tight PCB sandwich (positive/negative/positive) to minimize the commutation loop inductance between the module's power terminals and the DC-link capacitor bank. The U-series datasheet specifies a low-inductance internal module structure, but external loop inductance from the bus bars and DC-link capacitors adds to the total switching loop. Keep the commutation loop under 50 nH to limit voltage overshoot below the 1200V VCES rating at peak switching current. Place gate-driver circuitry as close as possible to the module's gate and auxiliary-emitter pins to minimize gate-loop inductance and avoid gate-oscillation problems.
Do not exceed the recommended mounting torque range of 2.5-3.5 N·m (M5/M6) for the heatsink side or 3.5-4.5 N·m (M6) for the power terminals, per the Fuji datasheet. Over-torquing can crack the ceramic isolation substrate and cause catastrophic isolation failure; under-torquing increases thermal resistance and may cause overheating. Always use a star washer or split-lock washer and a torque-limiting wrench calibrated to the specified range. Also avoid running the module above its 150°C junction-temperature maximum even under transient conditions, as this can cause bond-wire fatigue and long-term reliability degradation.
Compliance Information
RoHS/REACH compliance status was not surfaced in the verified web data; this is an industrial chassis-mount IGBT module where such compliance is typically declared by the manufacturer on the product datasheet. AEC-Q100 is not applicable to industrial power modules.
