APT50GH120B - 1200V 50A Fast Field-Stop IGBT | Microchip
MPN: APT50GH120B ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $15.2 | $15.20 |
| 10 | $13.75 | $137.50 |
| 100 | $12.1 | $1,210.00 |
| 500 | $10.95 | $5,475.00 |
| 1,000 | $9.8 | $9,800.00 |
APT50GH120B Overview
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the MOSFET's voltage-driven insulated gate with the bipolar transistor's low conduction loss at high voltages. In the power-semiconductor hierarchy, it sits alongside MOSFETs and thyristors as a switching device, and it is the default choice for medium-voltage, moderate-frequency power conversion where a silicon MOSFET would suffer excessive conduction loss above roughly 600V.
Key features of the APT50GH120B include a 1200V collector-emitter rating for industrial 600-800V DC bus systems, a fast field-stop trench construction that reduces tail current and turn-off energy, and a robust thermal budget of 492W with up to 119A continuous collector current per the Microchip product page. The field-stop architecture gives short, controlled turn-off tails, which matters in hard-switched bridges.
Technically, the field-stop (thin-wafer) design uses a lightly doped wafer with a stop layer that shortens the drift region, reducing VCE(on) and switching energy simultaneously. Mouser classifies it as an IGBT FAST Fieldstop Low Frequency Combii type, indicating it is optimized for low-frequency switching topologies such as motor drives, UPS, and solid-state relays rather than high-frequency resonant converters. It is a bare IGBT die without a co-packaged anti-parallel diode; designs with inductive loads should either add an external freewheeling diode or select the related APT50GH120BD30, which co-packages a DQ anti-parallel diode in the same TO-247 outline.
Typical applications include 1200V-class motor drives and inverters, uninterruptible power supplies (UPS), industrial welding power stages, and medium-power switched-mode supplies operating on rectified three-phase mains.
Design consideration: without an internal anti-parallel diode, always verify freewheeling paths for inductive loads; the gate resistor value is the main knob for trading switching loss against EMI and voltage spikes.
This page synthesizes distributor availability from DigiKey, Mouser, Arrow, and TrustedParts, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for APT50GH120B — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
APT50GH120BD30
✅ Drop-In📋 Reference alternative (not in catalog)
APT30GH120B
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
APT75GH120B
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
APT50GF120B
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
APT50GH120B Maximum Ratings & Electrical Characteristics
| Collector-Emitter Voltage (VCES) | 1200 V |
| Nominal Collector Current | 50 A |
| Continuous Collector Current (max) | 119 A |
| Pulsed Collector Current | 200 A |
| Maximum Power Dissipation | 492 W |
| Technology | Fast Field-Stop IGBT |
| Operating Frequency Class | Low frequency |
| Co-packaged Diode | None (IGBT only) |
| Package | TO-247, 3-pin (3+Tab) |
| Mounting Type | Through Hole |
| Configuration | Single IGBT |
| Polarity | N-Channel |
| Packaging | Tube |
APT50GH120B Pin Configuration
| Pin 1 | G — Gate - insulated control terminal |
| Pin 2 | C — Collector - connected to metal tab |
| Pin 3 | E — Emitter - power return terminal |
Safe Operating Area (Estimated from 492W PD limit)
Typical Applications
APT50GH120B is suitable for 6 applications: Industrial Motor Drives and Inverters, Uninterruptible Power Supplies (UPS), Welding Power Supplies, Solid-State Relays and AC Switches, Medium-Power Switched-Mode Power Supplies, Battery Formation and Test Equipment.
Industrial Motor Drives and Inverters
In 1200V-class variable-frequency drives, the APT50GH120B serves as the bridge switch on a rectified three-phase or 800V DC bus. Its 50A nominal rating covers frame sizes in the low-tens-of-kilowatts range, and the 119A continuous capability gives headroom for overload and low-speed high-torque events. Field-stop construction keeps turn-off tails short, reducing bridge dead-time requirements. Because this is a low-frequency-class part, it suits lower PWM carrier frequencies where conduction loss dominates. The bare die requires attention to freewheeling diode selection under motor leakage inductance, or use of the APT50GH120BD30 variant.
Recommended
Uninterruptible Power Supplies (UPS)
Online double-conversion UPS systems operating from rectified 400V three-phase mains need 1200V-rated switches with strong thermal margin for grid disturbances and battery-mode transients. The APT50GH120B's 492W dissipation rating and rugged field-stop die tolerate the overload and short-circuit stress profiles typical of UPS inverter stages. Its low-frequency optimization matches the 10-20 kHz carrier range common in UPS inverters, minimizing switching loss. Adding fast external freewheeling diodes (or choosing the BD30 variant) is essential because output filter inductors force reverse current during dead time.
Recommended
Welding Power Supplies
Industrial arc and resistance welders impose repeated high-current pulses on their switching devices. The APT50GH120B's 200A pulsed collector current rating and 119A continuous capability absorb the arc-start transients and short-circuit-like loads inherent in welding power stages. Its 1200V rating provides robust margin against leakage-inductance voltage spikes on the primary side of the welding transformer. Since welder converters typically switch in the low-kHz range, the low-frequency field-stop optimization keeps losses manageable; a properly snubbered layout and RBSOA verification under worst-case fault conditions are mandatory design steps.
Recommended
Solid-State Relays and AC Switches
The APT50GH120B is used in solid-state contactors switching rectified three-phase mains, where its 1200V blocking rating withstands line transients and its low-frequency class matches the infrequent, slow switching of relay duty. Conduction loss, not switching loss, dominates this application, so the device's thermal capacity of 492W and large TO-247 tab enable simple single-device solutions with modest heatsinking. Because switching events are rare, the absence of a co-packaged diode is acceptable, and an external MOV or snubber across the device protects against inductive load voltage overshoot during turn-off.
Recommended
Medium-Power Switched-Mode Power Supplies
SMPS stages fed from rectified three-phase input (approximately 560-800V DC bus) benefit from the APT50GH120B's 1200V rating and 50A current class for power levels from tens to above one hundred kilowatts when paralleled. In hard-switched forward or full-bridge topologies at low PWM frequency, the field-stop turn-off characteristic controls tail loss and simplifies snubber design. Verify RBSOA at your collector current and gate resistance, since unclamped inductive switching above the datasheet limits will stress the die. Soft-switching (phase-shifted full-bridge) topologies further reduce switching loss and suit this part well.
Recommended
Battery Formation and Test Equipment
High-voltage battery formation and automated test systems need linear or switching elements that tolerate sustained high current with generous thermal margin. The APT50GH120B's 119A continuous rating and 492W package dissipation, combined with a 1200V blocking capability, make it usable in series-pass and chopper stages for cell cycling equipment on high-voltage strings. Operating in the low-frequency regime minimizes switching loss, though conduction loss demands careful heatsink design and junction-temperature monitoring. The TO-247 through-hole package eases mounting on serviceable cold plates typical of test-bay hardware.
Recommended
Recommended Products Summary
Engineering reference data for APT50GH120B — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | APT50GH120BD30 | APT30GH120B | APT75GH120B | APT50GF120B |
|---|---|---|---|---|---|
| Package | TO-247 (3+Tab) | TO-247 (3+Tab) - same | TO-247 (3+Tab) - same | TO-247 (3+Tab) - same | TO-247 (3+Tab) - same |
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| VCES Rating | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Nominal Collector Current | 50 A | 50 A | 30 A | 75 A | 50 A |
| Co-packaged Diode | None | DQ anti-parallel diode | None | None | None |
| Technology / Speed Class | Fast field-stop, low frequency | Fast field-stop, low frequency | Field-stop | Field-stop | Standard-speed field-stop (higher switching loss) |
| Packaging | Tube | Tube | Tube | Tube | Tube |
Key Differentiators
- Fast field-stop turn-off in a low-frequency-optimized part (vs APT50GF120B)
- Lower conduction loss path with bare die flexibility (vs APT50GH120BD30)
- 119A continuous / 200A pulsed current capability in TO-247 (vs APT30GH120B)
Design Notes
The 492W maximum dissipation figure applies only with a heatsink holding the case near 25C; real designs must budget conduction loss from the VCE(on) curves at your actual rms current and junction temperature (VCE(on) rises with temperature in IGBTs). Estimated: at 50A rms and roughly 2.5V VCE(on), conduction loss is about 125W per device at 50% duty, which needs a heatsink with thermal resistance on the order of 0.5 C/W including interface. Verify junction stays below the datasheet Tj max with margin.
The APT50GH120B has no co-packaged anti-parallel diode. Any inductive load (motor windings, transformer leakage, output chokes) forces reverse current during dead time, and without a freewheeling path the collector voltage avalanches and destroys the die. Either add an external fast-recovery diode across C-E or use the same-family APT50GH120BD30 with its integrated DQ diode. This is the single most common failure cause when substituting the bare part into a BD30-designed board.
Keep the gate loop short: place the gate driver close to the TO-247, use a dedicated gate return trace separate from the power emitter, and include a 10-20 ohm gate resistor (adjustable) to control di/dt and collector voltage overshoot. Kelvin-source or separate emitter connection for the driver reduces gate ringing. Add a low-inductance DC bus snubber near the bridge to clamp turn-off overshoot below the 1200V rating with margin.
Compliance Information
Compliance status was not captured in the verified web data; consult the Microchip product page or datasheet for RoHS/REACH declarations.
