IKW40N120T2FKSA1 - 1200V 75A TRENCHSTOP IGBT4 | Infineon
MPN: IKW40N120T2FKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.42 | $8.42 |
| 10 | $7.58 | $75.80 |
| 100 | $6.49 | $649.00 |
| 500 | $5.78 | $2,890.00 |
| 1,000 | $5.21 | $5,210.00 |
IKW40N120T2FKSA1 Overview
What is an IGBT? An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high-input-impedance, voltage-driven gate of a MOSFET with the low-conduction-loss output stage of a bipolar transistor. IGBTs sit in the power-semiconductor hierarchy above power MOSFETs and below thyristors, occupying the mid-voltage (600 V to 1700 V), high-current (10 A to 3600 A) sweet spot used in switch-mode power conversion. Within that hierarchy, Trench + Fieldstop generation 4 ('IGBT4') parts target hard-switching applications such as totem-pole PFC, full-bridge converters, and three-phase inverters where switching frequency and dynamic loss dominate.
Key features include VCE(sat) of 1.75 V at rated IC, short-circuit ruggedness of 10 microseconds at 25 C and 6 microseconds at 150 C, a wide gate-emitter operating range of plus/minus 20 V, and an integrated co-packed diode with soft reverse-recovery. The TO-247-3-1 package offers a low thermal resistance path and a screw-mountable mechanical interface for industrial heatsink assemblies.
Typical applications are induction heating inverters, photovoltaic string and central inverters, uninterruptible power supplies (UPS), welding converters, and three-phase motor drives in the 10 kW to 50 kW range. The co-packed diode eliminates the need for an external anti-parallel rectifier in half-bridge configurations, simplifying PCB layout and reducing parasitic loop inductance.
When designing with this part, keep the gate-drive loop short and place a gate-emitter pull-down resistor (typically 10 kohm) close to the package to prevent dv/dt-induced turn-on. For high-frequency switching above 20 kHz, verify switching loss budgets against the IKW40N120T2 family curves in the datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IKW40N120T2FKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IKW40N120T2
β Drop-Inπ Reference alternative (not in catalog)
IKW40N120H3
β Drop-Inπ Reference alternative (not in catalog)
IKW40T120
β Drop-Inπ Reference alternative (not in catalog)
STGW40H120DF2
β Drop-Inπ Reference alternative (not in catalog)
NGTB40N120FL2WG
β Drop-Inπ Reference alternative (not in catalog)
IKW40N120T2FKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IKW40N120T2FKSA1 |
| Technology | TRENCHSTOP IGBT4 (Trench + Fieldstop) |
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC, TC=25 C) | 75 A |
| Continuous Collector Current (IC, TC=100 C) | 40 A |
| Gate-Emitter Voltage (VGE) | plus/minus 20 V |
| Maximum Power Dissipation (Ptot) | 480 W |
| VCE(sat) at rated IC | 1.75 V |
| Co-packed Diode | Yes (anti-parallel emitter-controlled diode) |
| Short-Circuit Withstand Time (Tj=25 C) | 10 microseconds |
| Short-Circuit Withstand Time (Tj=150 C) | 6 microseconds |
| Operating Junction Temperature | -40 C to +175 C |
| Package | PG-TO247-3-1 (TO-247-3 with isolated mounting hole variation) |
| Mounting Type | Through-Hole |
| RoHS Status | Compliant |
IKW40N120T2FKSA1 Pin Configuration
| Pin 1 | Gate β Gate input (voltage-controlled, plus/minus 20 V max) |
| Pin 2 | Collector β Power collector (also tied to the metal tab/back of package) |
| Pin 3 | Emitter β Power emitter and Kelvin reference for gate-drive return |
Reverse Bias Safe Operating Area (RBSOA) at VGE = 15 V, Tj = 150 C
Typical Applications
IKW40N120T2FKSA1 is suitable for 7 applications: Induction Heating Inverter, Photovoltaic String Inverter, Uninterruptible Power Supply (UPS), Industrial Welding Converter, Three-Phase Motor Drive (10-50 kW), Power Factor Correction (PFC) Boost Stage, Electrolysis / Plasma Power Supply.
Induction Heating Inverter
The IKW40N120T2FKSA1 fits induction-heating resonant inverters operating at 20 kHz to 100 kHz with an 800 V DC-link. Its TRENCHSTOP IGBT4 cell design and VCE(sat) of 1.75 V minimize conduction loss while the co-packed soft-recovery diode tames reverse-recovery stress on the complementary device during zero-voltage switching transitions. At 30 kW output, four parts in a full-bridge deliver roughly 96 percent efficiency and survive the high di/dt of resonant tank commutation. The 10 microsecond short-circuit rating at 25 C also protects against start-up tank mistuning.
Recommended
Photovoltaic String Inverter
Solar string inverters in the 10 kW to 25 kW range use a 1200 V IGBT in the full-bridge DC-AC stage following a 1000 V DC bus. The IKW40N120T2FKSA1 delivers 75 A peak at 25 C case with 480 W dissipation in a TO-247 footprint, comfortably handling 50 kHz PWM while keeping junction temperature under 125 C. Its integrated free-wheeling diode removes a discrete component from the BOM and reduces parasitic loop inductance. Compared to a 1200 V MOSFET alternative, the IGBT4 cell has lower conduction loss at the high-current portion of each AC cycle, boosting CEC-weighted efficiency by 0.4 to 0.7 percent.
Recommended
Uninterruptible Power Supply (UPS)
Online double-conversion UPS systems in the 5 kVA to 30 kVA range use a 1200 V IGBT in the inverter stage to regenerate a clean sine wave from battery or rectified mains. The IKW40N120T2FKSA1's 75 A continuous rating at 25 C supports up to 20 kW of three-phase output with two devices per phase leg, while the co-packed diode simplifies the half-bridge layout. The wide VGE operating window of plus/minus 20 V gives margin against common-mode noise on long gate-drive cables between the control board and the power module.
Recommended
Industrial Welding Converter
Welding power supplies rely on 1200 V IGBTs to handle the wide output range and short-circuit transients typical of arc welding. The IKW40N120T2FKSA1 offers 10 microsecond short-circuit withstand at 25 C, which is essential when the welding rod sticks to the workpiece and the output is briefly shorted. Its TO-247-3-1 package screws directly to a chassis-mount heatsink for the rugged industrial environment. The 480 W dissipation rating also supports pulsed welding currents up to 200 A without exceeding thermal limits.
Recommended
Three-Phase Motor Drive (10-50 kW)
Variable-frequency drives for industrial three-phase motors in the 10 kW to 50 kW power range use 1200 V IGBTs in a six-pack or three-half-bridge configuration. The IKW40N120T2FKSA1's 40 A rating at 100 C case temperature matches typical continuous motor current up to 30 A RMS with overload margin. The TRENCHSTOP IGBT4 cell provides low switching loss at the 8 kHz to 16 kHz PWM frequencies typical of motor control, and the co-packed diode eliminates six external anti-parallel rectifiers. Designers should still add a 10 kohm gate-emitter pull-down resistor to prevent dv/dt-induced turn-on.
Recommended
Power Factor Correction (PFC) Boost Stage
Totem-pole bridgeless PFC stages in the 5 kW to 15 kW range use 1200 V IGBTs as the slow leg switching at line frequency while the fast leg uses GaN or SiC MOSFETs at 100 kHz+. The IKW40N120T2FKSA1 is well suited to the slow leg: its 1.75 V VCE(sat) keeps conduction loss low at the 30 A RMS line current, and the co-packed diode handles the reverse recovery at AC zero-crossing without a discrete part. The 1200 V rating gives adequate margin against the 800 V peak rectified mains plus transients.
Recommended
Electrolysis / Plasma Power Supply
Hydrogen electrolysis stacks and plasma generators use high-current DC supplies that switch at 10 kHz to 50 kHz from a 600 V to 800 V DC bus. The IKW40N120T2FKSA1's 75 A rating at 25 C case supports continuous current up to 70 A in a single half-bridge, and the co-packed diode simplifies the full-bridge topology. The 480 W power dissipation rating allows sustained operation with forced-air cooling, while the -40 C to +175 C junction range covers outdoor electrolyzer installations in cold climates.
Recommended
Recommended Products Summary
Engineering reference data for IKW40N120T2FKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKW40N120T2 | IKW40N120H3 | IKW40T120 | STGW40H120DF2 | NGTB40N120FL2WG |
|---|---|---|---|---|---|---|
| Package | TO-247-3-1 (through-hole) | TO-247-3-1 (same) | TO-247-3-1 (same) | TO-247-3-1 (same) | TO-247 (same footprint) | TO-247 (same footprint) |
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| VCE (Collector-Emitter Voltage) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous IC at TC=25 C | 75 A | 75 A | 75 A | 75 A | 80 A | 75 A |
| VCE(sat) at rated IC | 1.75 V | 1.75 V | 1.45 V (-17%) | 2.0 V (+14%) | 1.85 V (+6%) | 1.95 V (+11%) |
| Technology Generation | IGBT4 (Trench + Fieldstop) | IGBT4 (same) | IGBT7 | IGBT3 / TRENCHSTOP 1 | HB2 (ST proprietary) | Field Stop II |
| Co-packed Diode | Yes (soft recovery) | Yes (same) | Yes | Yes | Yes | Yes |
| Unit Price (qty 1, USD) | 8.42 | 7.10 (-16%) | 9.10 (+8%) | 6.95 (-17%) | 9.80 (+16%) | 8.90 (+6%) |
Key Differentiators
- Lower VCE(sat) than older TRENCHSTOP 1 generations (vs IKW40T120)
- Higher efficiency than IGBT7 in some hard-switched topologies (vs IKW40N120H3)
- Lower price than IGBT7-generation equivalents (vs IKW40N120H3)
- Wide VGE rating with safe negative bias headroom (vs STGW40H120DF2)
Design Notes
The TO-247-3-1 package has a typical Rth(j-c) of 0.31 C/W and Rth(j-a) of 40 C/W without heatsink. At 480 W maximum dissipation, the junction temperature rises 149 C above case, so a heatsink with thermal resistance below 0.4 C/W is required for sustained full-power operation. Use thermal compound (thermal conductivity > 1 W/m-K) and torque the mounting screw to 0.6 to 0.9 N-m to keep contact resistance low.
Keep the gate-drive loop area as small as possible - place the gate-emitter pull-down resistor (typically 10 kohm) and the gate-drive IC within 15 mm of the Gate and Emitter pins. The Collector loop should be separated from the Gate loop to avoid capacitive coupling. Add a 100 ohm gate-series resistor and a small ferrite bead if ringing is observed on the gate waveform during turn-off.
Do not exceed the maximum gate-emitter voltage of plus/minus 20 V. A gate voltage above plus 20 V can cause oxide breakdown; reverse polarity beyond minus 20 V destroys the gate. Use a 15 V drive with a negative bias of -5 V to -8 V for noisy industrial environments. Also, do not switch at high dV/dt without verifying RBSOA in the datasheet curves - operation outside RBSOA can cause latch-up and thermal runaway.
Estimated switching loss at 50 kHz, 600 V, 40 A: Eon + Eoff is approximately 4 to 6 mJ per cycle based on the IKW40N120T2 datasheet curves, giving 200 to 300 W of switching dissipation in addition to conduction loss. Total losses in a typical 20 kW inverter stage are around 400 to 500 W per device, requiring forced-air cooling at 3 m/s or a water-cooled cold plate.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade part. Halogen-free per Infineon product environmental compliance information.
