K9MUGY8R4A-BCQ0 - Samsung V-NAND TLC Flash Memory | Samsung
MPN: K9MUGY8R4A-BCQ0 ✓ Active| Qty | Unit Price | Extended |
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Drop-in alternatives for K9MUGY8R4A-BCQ0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9MUGY8R4A-CCQ0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →K9MUGY8R4A-BCQK
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
K9LUGY8J7D-BCK0
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View Datasheet →K9KUGY8J7C-BCK0
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$9.55 / Unit
View Datasheet →K9IUGY8J7B-BCK0
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View Datasheet →K9MUGY8R4A-BCQ0 Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Memory Type | NAND Flash (V-NAND) |
| Cell Type | TLC (Triple-Level Cell) |
| ECC Requirement | Host-controller ECC mandatory (TLC) |
| Mounting Type | Surface Mount (BGA) |
K9MUGY8R4A-BCQ0 [data_needed: exact bga package code and dimensions] Pin Configuration Guide
Complete pinout information for K9MUGY8R4A-BCQ0 ([data_needed: exact bga package code and dimensions] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: exact bga package code and dimensions] package pinout diagram for K9MUGY8R4A-BCQ0](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9MUGY8R4A-BCQ0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9MUGY8R4A-BCQ0 is suitable for 6 applications: Client and Enterprise SSD, Embedded Storage (eMMC/UFS), Data Center Storage Appliances, Industrial Storage Modules, Set-Top Box and Smart TV Storage, Network Attached Storage (NAS) Drives.
Client and Enterprise SSD
The K9MUGY8R4A-BCQ0 fits SSD controller-based storage where maximum bits per BGA footprint and TLC cost-per-bit economics matter. Samsung V-NAND TLC die combined with an LDPC-capable controller (for example Samsung or SMI controllers qualified for this generation) delivers the density and bandwidth expected in client NVMe and SATA SSDs. Multi-plane concurrent operation reduces effective program-time overhead, raising sequential write throughput at the channel level. Because TLC endurance is finite, the SSD firmware must run aggressive wear leveling and background garbage collection; power-loss protection capacitors protect in-flight program operations. Design-in requires matching the controller's ONFI/Toggle timing profile to this die generation per the official datasheet.
Recommended
Embedded Storage (eMMC/UFS)
In eMMC and UFS modules, the K9MUGY8R4A-BCQ0 provides the raw TLC V-NAND density behind a managed-NAND controller. The die's high-speed NAND interface feeds the module controller, which handles ECC, wear leveling, and JEDEC eMMC/UFS protocol translation. Samsung's V-NAND stacking gives module vendors more gigabytes per package area, enabling thin mobile and IoT form factors. Designers must ensure the module controller's firmware variant supports this V-NAND generation's timing and feature registers. A key consideration: TLC program interference over the endurance window makes LDPC ECC mandatory, and page pairing awareness in firmware improves retention performance across the block lifecycle.
Recommended
Data Center Storage Appliances
Data-center storage appliances use high-density TLC V-NAND die such as the K9MUGY8R4A-BCQ0 to maximize terabytes per rack-unit while controlling cost per bit. In all-flash arrays and storage-class-memory tiering designs, multiple die are ganged across controller channels; multi-plane operation and cache-program modes raise aggregate bandwidth. Samsung V-NAND's vertical stacking improves endurance and read-disturb margins relative to planar TLC, supporting the write-intensive duty cycles of virtualization and analytics workloads. Enterprise deployment still requires end-to-end data-path protection (CRC, parity, and LDPC ECC), plus power-fail safeguards. Firmware qualification against this exact die generation is essential before production ramp.
Recommended
Industrial Storage Modules
Industrial SSDs and storage modules built on the K9MUGY8R4A-BCQ0 benefit from V-NAND's reliability margins and TLC density for logging, imaging, and edge-compute data retention. Industrial controllers add extended-temperature qualification and power-fail management on top of the die's native capabilities. Because this is a commercial-grade die, designers must verify the temperature grade in the official Samsung datasheet and implement robust LDPC ECC plus dynamic wear leveling to meet industrial endurance targets. Expected capacity per BGA footprint allows compact fanless industrial PCs and gateways to carry multi-terabyte local storage. Shock and vibration immunity comes from the BGA solder attachment with appropriate PCB stiffening.
Recommended
Set-Top Box and Smart TV Storage
Consumer media platforms such as set-top boxes, smart TVs, and streaming gateways use TLC V-NAND die like the K9MUGY8R4A-BCQ0 for application storage, DVR buffering, and downloaded content. TLC density keeps the bill of materials competitive in cost-sensitive consumer designs, while V-NAND read-disturb margins preserve data integrity across years of mostly-read operation typical in these products. The die connects to the SoC's storage controller or a discrete managed-NAND controller that supplies LDPC ECC and wear leveling. Designers should budget for sustained sequential write performance during DVR recording sessions, where multi-plane caching improves throughput. Verify the SoC bootloader supports this Samsung die generation's ID and timing parameters.
Recommended
Network Attached Storage (NAS) Drives
NAS products and network storage nodes integrate TLC V-NAND die such as the K9MUGY8R4A-BCQ0 to build cache tiers or hybrid storage volumes. The die's high per-package density lets NAS OEMs fit large SSD capacities in standard 2.5-inch and M.2 form factors. Multi-channel controller designs gang several die to saturate 10GbE and multi-gigabit network links; cache-program and multi-plane modes are key to sustaining write bursts from RAID rebuilds. V-NAND's endurance improvements over planar TLC make it viable for the mixed read/write profiles of small-business NAS workloads. Ensure the NAS controller firmware list includes this V-NAND generation, and apply power-loss protection for RAID metadata integrity.
Recommended
Recommended Products Summary
Engineering reference data for K9MUGY8R4A-BCQ0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9LUGY8J7D-BCK0 | K9KUGY8J7C-BCK0 | K9IUGY8J7B-BCK0 |
|---|---|---|---|---|
| Package | BGA (V-NAND package) | BGA (V-NAND family) - same family footprint | BGA (V-NAND family) - same family footprint | BGA (V-NAND family) - same family footprint |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC (3 bits/cell) | TLC | TLC | TLC |
| V-NAND Generation | [DATA_NEEDED] | K9L generation | K9K generation | K9I generation |
| Density | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Firmware Re-validation Needed | Baseline | Yes (cross-generation) | Yes (cross-generation) | Yes (cross-generation) |
| Drop-in Certainty | Reference part | Partial - same family, prior generation | Partial - same family, prior generation | Partial - same family, prior generation |
Key Differentiators
- Newest-generation V-NAND stacking (vs K9LUGY8J7D-BCK0)
- TLC economics with V-NAND reliability (vs K9KUGY8J7C-BCK0)
- Controller ecosystem continuity (vs K9IUGY8J7B-BCK0)
Design Notes
Never substitute a different V-NAND generation on the same PCB without full firmware re-qualification. Samsung K9 V-NAND generations differ in timing registers, ONFI/Toggle parameter-page contents, and endurance characteristics. The controller's NAND ID table must include the exact die; otherwise bad-block maps and LDPC code rates may be misconfigured, causing data corruption in the field. Always validate with Samsung's latest controller firmware release notes before BOM changes.
High-speed Toggle-DDR/ONFI interfaces require controlled-length routing on the DQ/RE/WE signal groups within each channel. Keep trace-length mismatch per channel within the controller vendor's skew budget (typically a small percentage of the data period - check your controller datasheet for the exact figure). Series termination resistors on RE and DQ lines reduce reflections on multi-die channels. Verify VCCQ rail decoupling with multiple low-ESR ceramics placed at each die's supply balls.
Estimated: TLC V-NAND program operations draw transient current bursts across all enabled planes. Size the VCC and VCCQ rails with bulk capacitance sized for the controller's worst-case concurrent program profile rather than average current, and add a power-fail detection circuit that aborts in-flight program operations cleanly to prevent torn pages. For systems without supercapacitor power-loss protection, ensure firmware uses power-safe journaling of the FTL map.
Compliance Information
Compliance status not stated in the verified web data retrieved as of 2026-09-04. Request Samsung's official material declaration sheet for this MPN.
