SKM200GB125D - 200A/1200V Ultrafast IGBT Module | Semikron
MPN: SKM200GB125D ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $138 | $1,380.00 |
| 100 | $128.5 | $12,850.00 |
| 500 | $119 | $59,500.00 |
| 1,000 | $110 | $110,000.00 |
SKM200GB125D Overview
An IGBT (Insulated-Gate Bipolar Transistor) is a semiconductor power switch that combines the high-input-impedance, voltage-driven gate of a MOSFET with the high-current-density, low-saturation-voltage characteristics of a bipolar transistor. Within the power-electronics device hierarchy, an IGBT sits between MOSFETs (better for low-voltage/high-frequency) and thyristors/SCRs (better for very high power AC rectification). Half-bridge IGBT modules like the SKM200GB125D belong to the broader family of power modules and are widely used as the switching stage in industrial motor drives, servo amplifiers, and uninterruptible power supplies.
The SKM200GB125D is specified as an "Ultrafast" IGBT module, meaning its turn-off and turn-on transition times are optimized for switching frequencies in the 8 kHz to 25 kHz range typical of PWM inverter drives. The SEMITRANS 3 platform uses screw-mount baseplate construction with isolated substrate, eliminating the need for an external insulating washer and simplifying heatsink assembly. The module is panel-mountable and field-proven in industrial inverter designs.
In typical use the SKM200GB125D operates as one half-bridge leg (high-side + low-side IGBT) feeding a 50/60 Hz sinusoidal-modulated PWM output. Because the device integrates both IGBT transistors and their freewheeling diodes in one package, PCB parasitics and bus-bar inductance are minimized compared with discrete designs, and the thermal path is improved via the baseplate. Designers favor SEMITRANS 3 modules for printing-machine drives, welding inverters, solar inverters, and general-purpose three-phase IGBT bridges.
Mounted to an appropriately sized heatsink with proper thermal compound and isolated clamping hardware, the SKM200GB125D handles the 200 A continuous rating comfortably in continuous industrial duty, and can briefly sustain pulsed loads well above rated current for motor-start or short-circuit-clearance events. Care must be taken to provide sufficient DC-link capacitance, gate-drive optocoupler isolation, and short-circuit protection (DESAT detection) to fully exploit the module's switching performance.
This page synthesizes distributor pricing and stock data, drop-in SEMIKRON and cross-brand replacement part numbers, and practical heatsink / gate-drive design considerations not covered in the manufacturer datasheet alone.
Drop-in alternatives for SKM200GB125D — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
SKM200GB123D
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
SKM200GB128D
✅ Drop-In📋 Reference alternative (not in catalog)
SKM200GB124DE
✅ Drop-In📋 Reference alternative (not in catalog)
SKM150GB123D
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
CM200DY-24NF
✅ Drop-In📋 Reference alternative (not in catalog)
FS200R12KE3
✅ Drop-In📋 Reference alternative (not in catalog)
SKM200GB125D Maximum Ratings & Electrical Characteristics
| Manufacturer | Semikron (Semikron Danfoss) |
| Product Type | IGBT Power Module (Dual N-Channel, Half-Bridge) |
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic) | 200 A |
| Configuration | Half-bridge (Dual IGBT + antiparallel diodes) |
| Technology | Ultrafast NPT IGBT |
| Package / Case | SEMITRANS 3 (Case D-56) |
| Mounting Type | Panel Mount, Screw |
| Operating Temperature Range | -40C to +150C (junction) |
| Switching Frequency Range (typical) | 8 kHz to 25 kHz |
SKM200GB125D Pin Configuration
| Pin 1 | C2 (Collector, upper switch) — Upper-switch collector / positive DC-link connection |
| Pin 2 | E1 (Emitter, lower switch) — Lower-switch emitter / switched phase output |
| Pin 3 | G1 (Gate, lower switch) — Lower-switch gate-drive input |
| Pin 4 | C1 (Collector, lower switch) — Lower-switch collector / switched phase node |
| Pin 5 | G2 (Gate, upper switch) — Upper-switch gate-drive input |
| Pin 6 | E2 (Emitter, upper switch) — Upper-switch emitter / switched phase output |
Safe Operating Area - SKM200GB125D per-switch
Typical Applications
SKM200GB125D is suitable for 7 applications: Industrial AC Motor Drive / VFD, AC Servo Amplifier, Uninterruptible Power Supply (UPS), Solar / PV Inverter, Industrial Welding Inverter, Printing-Machine Main Drive, Brake Chopper / Regenerative Drive.
Industrial AC Motor Drive / VFD
The SKM200GB125D serves as the half-bridge switching element in 380 V to 480 V three-phase variable-frequency drives (VFDs) in the 30 kW to 75 kW power band. Its 200 A continuous Ic and 1200 V Vces provide ample headroom for 690 V AC line inputs with regenerative-braking transients, while the ultrafast IGBT family allows switching frequencies up to ~20 kHz for low-current-ripple sinusoidal PWM. The SEMITRANS 3 baseplate routes heat directly to a finned heatsink, and the integrated antiparallel diodes eliminate the need for external freewheel components. Compared with discrete IGBT designs, the module minimizes DC-link parasitic inductance, critical for limiting Vce overshoot at 200 A switching transitions and improving inverter EMI performance.
Recommended
AC Servo Amplifier
In servo amplifiers for industrial robotics and CNC machines, the SKM200GB125D powers the precision three-phase inverter driving permanent-magnet servo motors in the 20 kW to 60 kW class. Its ultrafast switching characteristics deliver the wide closed-loop bandwidth needed for accurate torque control, while the 1200 V voltage rating cleanly covers 220 V to 480 V rectified bus voltages. The SEMITRANS 3 mechanical outline fits standard servo-drive chassis designs, and dual-switch configuration lets two modules form a complete three-phase inverter with six switches total. Designers value the module's thermal robustness because servo amplifiers often operate near rated current during acceleration phases.
Recommended
Uninterruptible Power Supply (UPS)
Online UPS systems in the 30 kW to 100 kW range use the SKM200GB125D as the bridge-stage switch between the battery bank and the output transformer, providing bidirectional power flow for line-interactive or double-conversion topologies. At 1200 V Vces the module handles 384 V to 480 V DC-link buses comfortably, while the 200 A continuous rating supports full-load operation without paralleling. The ultrafast IGBT technology keeps switching losses low, improving overall UPS efficiency (a key selling point in data center installations) and reducing cooling budget. SEMITRANS 3 packaging simplifies parallel-module configurations where redundancy is required for N+1 UPS architectures.
Recommended
Solar / PV Inverter
String inverters in the 30 kW to 75 kW commercial-PV segment use the SKM200GB125D in the DC-to-AC bridge converting 600 V to 800 V DC strings to 400 V three-phase AC output. The 1200 V Vces supplies the 200 V transient margin needed for grid-side disturbances, while 200 A continuous handles peak inverter power without current-derating. Ultrafast IGBTs in this class enable switching frequencies up to 20 kHz, keeping output current Total Harmonic Distortion (THD) below 3% to satisfy IEEE 1547 grid-interconnect requirements. The SEMITRANS 3 baseplate is outdoor-compatible when properly encapsulated, and the integrated anti-parallel diodes simplify the inverter bridge layout.
Recommended
Industrial Welding Inverter
Welding inverters for MIG/TIG and stick-welding applications in the 200 A to 400 A output class often rely on the SKM200GB125D as the primary switching device in the resonant or hard-switched bridge. The 200 A / 1200 V rating carries the heavy cyclic loads typical of arc welding, while ultrafast switching supports the 20-50 kHz operation needed for compact magnetic designs and stable arc characteristics. The SEMITRANS 3 package's industrial-quality thermal path prolongs module life under high-temperature, high-vibration welding-floor conditions. Designers may use a single SKM200GB125D half-bridge for lower-power welders or parallel multiple units for industrial 400 A+ systems.
Recommended
Printing-Machine Main Drive
Offset and digital printing presses use the SKM200GB125D as the main-drive inverter in their electric motor drive cabinets, controlling the multi-kW motors that synchronize paper travel. Semikron SEMITRANS 3 modules are an industry-standard part on Heidelberg, KBA and MAN Roland presses precisely because of the SKM200GB125D's proven reliability and its screw-mounted chassis-serviceable design. Spare modules can be field-swapped by technicians, minimizing press downtime. Its 200 A / 1200 V electrical envelope matches the 380 V to 480 V three-phase supply common in commercial print facilities.
Recommended
Brake Chopper / Regenerative Drive
In crane, elevator and hoist regenerative drives, the SKM200GB125D serves as the brake-chopper IGBT, dissipating regenerated kinetic energy back into a braking resistor when the motor is overhauling. The 1200 V Vces rating handles the regenerative DC-link overshoots that occur during emergency stops and the 200 A rating covers peak braking currents of 300+ A briefly. The module's robust short-circuit withstand capability (a key IGBT family attribute for industrial braking) prevents nuisance trips under harsh deceleration. The SEMITRANS 3 outline allows direct integration into existing brake-chopper chassis used in mining and material-handling equipment.
Recommended
Recommended Products Summary
Engineering reference data for SKM200GB125D — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | SKM200GB123D | SKM200GB128D | CM200DY-24NF | FS200R12KE3 |
|---|---|---|---|---|---|
| Package | SEMITRANS 3 (Case D-56) | SEMITRANS 3 (Case D-56) - same | SEMITRANS 3 (Case D-56) - same | Industrial module (Mitsubishi equivalent footprint) | EconoPACK 3 / 62 mm (Infineon, SEMITRANS-compatible) |
| Brand | Semikron (Semikron Danfoss) | Semikron | Semikron | Mitsubishi | Infineon |
| Collector-Emitter Voltage (Vces) | 1200 V | 1200 V | 1200 V (Vce(sat) optimized variant) | 1200 V | 1200 V |
| Continuous Collector Current (Ic) | 200 A | 200 A | 200 A | 200 A | 200 A |
| Configuration | Half-bridge (Dual IGBT) | Half-bridge | Half-bridge | Half-bridge | Sixpack (3-phase full bridge) |
| Switching Speed | Ultrafast | Ultrafast | Ultrafast | Ultrafast | Standard (slower switching) |
| Mounting Type | Panel / Screw mount (isolated substrate) | Panel / Screw (isolated substrate) | Panel / Screw (isolated substrate) | Panel / Screw | Panel / Screw |
| Typical Unit Price (qty 1, USD) | ~$145 | ~$140 | ~$150 | ~$135 | ~$165 (sixpack) |
Key Differentiators
- Long-running SEMITRANS 3 platform with multi-decade field-proven reliability (vs FS200R12KE3 (Infineon))
- Ultrafast IGBT technology optimized for 8-25 kHz PWM (vs SKM200GB128D (same brand, slower variant))
- Cross-brand drop-in compatibility with Mitsubishi CM200DY-24NF (vs CM200DY-24NF (Mitsubishi))
Design Notes
Estimated: at 200 A continuous and a typical Vce(sat) in the 1.7 V to 2.0 V range per switch, single-switch conduction loss is on the order of 340-400 W. Combined switching losses at 15 kHz add another 60-100 W per switch. The SEMITRANS 3 baseplate needs a 0.5 C/W (or lower) heatsink plus forced-air cooling (200 LFM) to keep Tj below 125 C in continuous industrial service. Always apply thermal compound (e.g. Wakefield 120-2) and torque power-terminal screws to manufacturer spec to avoid thermal runaway.
Estimated: minimize DC-link loop inductance by using laminated bus bars directly to the C1 / C2 power terminals. Loop inductance above 50 nH at 200 A switching will produce Vce overshoot exceeding 1200 V Vces and risk device breakdown. Place a 1-2 uF film snubber capacitor (low-ESR, e.g. EPCOS B32656 type) directly across the module's C1-E1 / C2-E2 terminals. Keep gate-drive wiring twisted-pair and as short as possible to avoid dv/dt-induced gate oscillation.
Never drive the SKM200GB125D gate without a negative turn-off bias (typically -8 V to -15 V). Without negative bias, an accidental dV/dt-induced turn-on of the complementary switch in the bridge can cause a destructive shoot-through. Use a high-CTV-rated IGBT gate-driver optocoupler (HCPL-316J, ACPL-332J or equivalent) with DESAT short-circuit protection set to trip at ~3x rated current. Inspect for ultrasonic-cleaner damage to the silicone gel and baseplate before field installation.
Although the SKM200GB125D is a chassis-mount power module and not a PCB SMD device, the gate-drive PCB that connects to its auxiliary pins must use reinforced insulation (functional isolation > 4 kV) for UL/CE compliance. Place the gate-driver board within 50 mm of the module's G1/G2 pins to keep gate-loop inductance below 50 nH, and reserve a 10 kV clearance between power and signal zones on the PCB.
The ultrafast IGBT switching of the SKM200GB125D at 15-20 kHz generates fast dV/dt edges (~10 kV/us) that couple back to the gate-drive circuits and DC bus. Install a common-mode ferrite on the DC-link cable and add an output filter (LC or LCL) to the inverter's three-phase output to keep conducted emissions within EN 61800-3 Class A/C1 limits. Shielded motor cables are recommended for installations longer than 5 m.
Compliance Information
Industrial power module; compliance data not present in the verified web sources. AEC-Q100 not applicable - automotive-grade certification is not applicable for industrial IGBT modules of this class. Confirm RoHS/REACH/lead-free status with Semikron Danfoss sales before procurement.
