DS1307ZN+T&R vs DS1307N Comparação

Comparação detalhada lado a lado de DS1307ZN+T&R por Analog Devices e DS1307N por Analog Devices. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Analog Devices
DS1307ZN+T&R DS1307ZN+T&R - I2C RTC with 56B SRAM | Analog Devices

DS1307ZN+T&R - I2C RTC with 56B SRAM | Analog Devices

DS1307ZN+T&R ✓ Ativo

Comparação de especificações

Parâmetro DS1307ZN+T&R DS1307N
Marca Analog Devices Analog Devices
Categoria Clock & Timing Clock & Timing
Status do ciclo de vida Ativo Ativo
Product Type Serial real-time clock and calendar with NV SRAM —
Clock Calendar Data Format Binary-coded decimal (BCD) —
Serial Interface I2C, bidirectional 2-wire serial —
NV SRAM Capacity 56 bytes —
Calendar Resolution Seconds through year —
Maximum Supply Voltage 5.5 V —
Encapsulamento 8-pin SOIC, 0.154 inch body width, 3.90 mm width 8-DIP (PDIP-8, 0.300 inch / 7.62 mm)
Tipo de montagem Surface mount Through-Hole
Shipping Format Tape and reel —
Faixa de temperatura de operação [DATA_NEEDED: operating temperature range] —
Supply Voltage Range [DATA_NEEDED: minimum and maximum operating supply voltage range] —
Timekeeping Accuracy [DATA_NEEDED: clock accuracy] —
Backup Battery Current [DATA_NEEDED: backup battery current] —
Active Current [DATA_NEEDED: active supply current] —
I2C Address [DATA_NEEDED: I2C slave address] —
Oscillator Type [DATA_NEEDED: oscillator and crystal configuration] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: lead-free/RoHS exact status]
REACH Status [DATA_NEEDED: REACH status] —
Função — Real-Time Clock (RTC) with 56 bytes NV SRAM
Time Format — HH:MM:SS (12/24 hr), YY-MM-DD-dd, BCD
Date Format — YY-MM-DD-dd
Tamanho da memória — 64 x 8 (56 bytes user NV SRAM + 8 bytes RTC registers)
Interface — I2C, 2-Wire Serial
I2C Bus Frequency — 100 kHz (Standard) / 400 kHz (Fast-mode)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Backup Battery Voltage (VBAT) — 2.0 V to 3.5 V (typ. 3 V coin cell)
Active Supply Current — 1.5 mA
Standby (Timekeeping) Current — 200 uA
Leap-Year Compensation — Valid up to year 2100
Programmable Square-Wave Output — 1 Hz, 4.096 kHz, 8.192 kHz, 32.768 kHz
Temperatura de operação — 0C to +70C (commercial)
Nível MSL — 1 (unlimited floor life)

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