IRF3710ZPBF - 100V 59A N-Channel HEXFET MOSFET | Infineon
N.º da peça: IRF3710ZPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.88 | $880,00 |
IRF3710ZPBF Visão geral
A HEXFET Power MOSFET is a specific class of N-channel enhancement-mode power MOSFET that uses a hexagonal cell layout to maximize channel width per unit silicon area, dramatically lowering RDS(on) compared to planar DMOS predecessors. In the broader taxonomy, HEXFET belongs to power MOSFET -> power discrete semiconductor -> discrete semiconductor. The IRF3710ZPBF sits in the 100V mid-voltage class, between sub-40V logic-level FETs and high-voltage 500V+ parts, and is one of the most widely adopted TO-220 N-channel devices for switching applications.
Key features include 18 mOhm typical RDS(on) at VGS=10V, 82 nC typical total gate charge, 175C maximum junction temperature with optimized 10V gate drive, fast switching speed, and an improved repetitive avalanche rating for inductive switching robustness. The TO-220AB package provides industry-standard through-hole mounting with a heatsink-compatible tab and a standard 3-pin G-D-S pinout that drops into any TO-220 layout.
The device uses Infineon's latest processing techniques to achieve extremely low on-resistance per silicon area while maintaining fast switching speed and improved repetitive avalanche rating. Product qualification follows the JEDEC standard, and the part is optimized for 10V gate drive voltage, making it ideal for use as a low-side switch driven directly by gate driver ICs, PWM controllers, or logic-level microcontrollers with gate charge pumps.
Typical applications include DC motor drives, switching power supplies (SMPS), synchronous rectifier secondary-side switches, solenoid drivers, DC-DC converter high-side/low-side switches, and automotive 12V/24V load switches. The wide safe operating area and 100V rating also make it suitable for 48V telecom bus switches and battery protection circuits in lithium-ion packs.
When designing with this part, place a 10kOhm gate-source pull-down resistor to prevent accidental turn-on during power-up transients, and ensure the gate drive voltage reaches at least 10V for full RDS(on) enhancement. A small series gate resistor (10-100 Ohm) helps dampen ringing in high-di/dt switching applications.
This page synthesizes Infineon distributor pricing, drop-in HEXFET alternatives, and practical TO-220 design notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for part selection and PCB integration.
Alternativas drop-in para IRF3710ZPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRF3710ZPBF (mesmo formato e footprint) — diferindo em Package, Technology, RoHS Status, Total Gate Charge (Qg).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRF3710ZSPbF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF3710ZLPbF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF3710ZS-7PPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFB4310ZPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF3710PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
FQP47P06
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF3710ZPBF Classificações máximas e características elétricas
| Tipo de transistor | N-Channel MOSFET |
| Technology | HEXFET (Advanced Process) |
| Drain-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) at Tc=25C | 59 A |
| Maximum Power Dissipation (Pd) at Tc=25C | 160 W |
| On-Resistance RDS(on) at VGS=10V | 18 mOhm (typical) |
| Total Gate Charge (Qg) | 82 nC (typical) |
| Maximum Junction Operating Temperature | 175 C |
| Gate Drive Voltage (Optimized) | 10 V |
| Encapsulamento | TO-220AB (through-hole, 3 pins) |
| Tipo de montagem | Through Hole |
| Pin Configuration | G-D-S (Gate-Drain-Source, standard TO-220) |
| Qualification Standard | JEDEC, Normal Level |
| Status RoHS | Compliant (PBF suffix) |
| Lead-Free | Yes |
Configuração de pinos do IRF3710ZPBF
| Pino 1 | Gate — MOSFET gate control input (drive to 10V for full enhancement) |
| Pino 2 | Drain — MOSFET drain (electrically connected to metal tab) |
| Pino 3 | Source — MOSFET source (return path for load current) |
Área de Operação Segura (DC, Tc=25C)
Aplicações típicas
IRF3710ZPBF é adequado para 7 aplicaçãos: DC Motor Drive (H-Bridge Low-Side), Synchronous Rectifier in SMPS Secondary, 12V/24V Automotive Load Switch, Solar Charge Controller / Battery Disconnect, Class-D Audio Amplifier Output Stage, Inductive Heating / Welding Inverter, 48V Telecom Bus Hot-Swap Controller.
DC Motor Drive (H-Bridge Low-Side)
The IRF3710ZPBF's 100V Vdss and 59A continuous drain current make it a strong fit for low-side switches in 24V/36V DC motor H-bridge drives used in robotics, electric bicycles, and industrial automation. With 18 mOhm typical RDS(on) at VGS=10V, conduction losses are kept low at typical 10-20A motor currents, supporting continuous operation without forced air cooling. The 82 nC total gate charge allows PWM switching up to 50 kHz, sufficient for high-quality torque control, and the 175C junction temperature rating provides ample thermal margin under stall-current transients. Place a 10kOhm gate-source pull-down resistor on each FET to prevent shoot-through during MCU startup.
Recomendado
Synchronous Rectifier in SMPS Secondary
The IRF3710ZPBF works well as a synchronous rectifier on the secondary side of 24V-to-low-voltage isolated SMPS converters, replacing Schottky diodes to recover forward-conduction losses. Its 18 mOhm RDS(on) outperforms even high-current Schottky diodes at 5V+ output rails, and the 100V Vdss easily handles reflected flyback voltages with margin. The 82 nC Qg enables efficient operation at 200-500 kHz switching frequencies when paired with a half-bridge gate driver such as the IR2104SPBF. The TO-220 package allows through-hole mounting on the heat-sink side of the PCB for direct thermal coupling to the chassis.
Recomendado
12V/24V Automotive Load Switch
In automotive body-electronics load switching - driving lamps, solenoids, and motors - the IRF3710ZPBF handles the 14.4V nominal battery plus 40V load-dump transients within its 100V Vdss rating. The 59A continuous current covers most high-current actuators, and the 18 mOhm RDS(on) keeps conduction losses under 20W even at 30A continuous load. Designers targeting AEC-Q101 automotive qualification should select the IRF3710ZS-7PPBF variant, which uses the same die and TO-220AB package footprint. A flyback diode is mandatory when switching inductive loads, and a TVS clamp on the drain protects against load-dump surges above 60V.
Recomendado
Solar Charge Controller / Battery Disconnect
For 12V/24V solar charge controllers and lithium-battery pack disconnect switches, the IRF3710ZPBF provides a low-loss series element in the main power path. With 18 mOhm RDS(on) at 10V VGS, a 20A solar input sees only 0.36V drop and 7.2W dissipation - far lower than relay-based designs. The 100V Vdss accommodates 24V battery stacks plus transient ringing from MPPT inductor switching. The 175C maximum junction temperature allows sustained operation in outdoor enclosures without active cooling, and the TO-220 package can be bolted directly to the metal enclosure for heatsinking.
Recomendado
Class-D Audio Amplifier Output Stage
The IRF3710ZPBF serves as the power output switch in 200-500W Class-D audio amplifiers where its 18 mOhm RDS(on) minimizes output-stage conduction losses and preserves amplifier efficiency above 90%. The 82 nC total gate charge and fast switching speed enable 250-500 kHz PWM operation, pushing the switching noise above the audio band for clean sound reproduction. The 100V Vdss rating supports single-rail amplifier designs up to +/-35V supply rails, and the 175C junction temperature handles the thermal stress of sustained high-power music peaks. The TO-220AB package is well-suited to amplifier chassis mounting for direct thermal coupling.
Recomendado
Inductive Heating / Welding Inverter
For low-frequency inductive heating, welding inverter, and high-current pulse applications, the IRF3710ZPBF's 160W power dissipation rating and improved repetitive avalanche capability make it a robust choice. The 100V Vdss accommodates rectified mains-derived 60-80V bus voltages, and the 59A continuous current supports welding currents up to several hundred amps in pulsed operation. The HEXFET technology's rugged avalanche rating allows the part to absorb the energy stored in the welding transformer leakage inductance without external snubbers in many designs, simplifying the overall circuit. Source: Infineon datasheet highlights this for improved repetitive avalanche rating.
Recomendado
48V Telecom Bus Hot-Swap Controller
In 48V telecom hot-swap and OR-ing applications, the IRF3710ZPBF provides a low-loss series disconnect switch for board-level inrush current limiting. The 100V Vdss easily handles the 48V nominal bus plus transient ringing, and the 18 mOhm RDS(on) at 10V VGS produces only 0.9V drop and 16W dissipation at 50A continuous load - much lower than traditional MOSFET OR-ing solutions. The 82 nC Qg allows turn-on within microseconds when paired with a dedicated hot-swap controller IC, minimizing inrush to downstream bulk capacitors. The 175C maximum junction temperature ensures long-term reliability in densely packed telecom shelves.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRF3710ZPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRF3710ZSPbF | IRF3710ZLPbF | IRFB4310ZPBF | IRF3710PBF | FQP47P06 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | TO-220AB | D2PAK-220 (surface-mount TO-220) | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (Vdss) | 100 V | 100 V - same | 100 V - same | 100 V - same | 100 V - same | 60 V (-40%) |
| Continuous Drain Current (Id) | 59 A | 59 A - same | 59 A - same | 130 A (+120%) | 57 A (-3%) | 47 A (-20%) |
| RDS(on) at VGS=10V | 18 mOhm | 18 mOhm - same | 18 mOhm - same | 8.5 mOhm (-53%) | 28 mOhm (+56%) | 26 mOhm (+44%) |
| Maximum Junction Temperature | 175 C | 175 C - same | 175 C - same | 175 C - same | 175 C - same | 175 C - same |
| AEC-Q101 Automotive Qualified | No | No | No | No | No | No |
| RoHS Compliant (Lead-Free) | Yes (PBF suffix) | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Latest-generation 100V HEXFET process with 18 mOhm RDS(on) (vs IRF3710PBF (older generation))
- 175C maximum junction temperature vs industry standard 150C (vs IRF3710PBF (older generation))
- Family pin-compatibility with higher-current IRFB4310ZPBF (vs IRFB4310ZPBF (100V/130A))
- Improved repetitive avalanche rating for inductive switching (vs FQP47P06 (onsemi))
Notas de projeto
Estimated: at 30A continuous load with VIN=24V and VDS conduction loss of P=I2*R=30*30*0.018=16.2W, the TO-220AB junction-to-ambient thermal resistance of 62 C/W (no heatsink) gives a 1000C junction temperature rise - clearly requiring a heatsink. With a modest 5 C/W heatsink and 50 CFM airflow, theta_JA drops to about 10 C/W, limiting junction rise to 162C - acceptable but tight. For reliable long-term operation, target a steady-state junction temperature below 100C (Tj = 50C ambient + 50C rise) by selecting a heatsink with theta_SA below 2.5 C/W at the expected airflow. Always mount the TO-220 with thermal compound (e.g., Wakefield 120-series) for optimal heat transfer.
Keep the gate drive loop area as small as possible - place the gate driver IC within 10mm of the IRF3710ZPBF gate pin and route gate-source traces as a tightly coupled differential pair. Use a ground plane on the source side to minimize source inductance, which otherwise causes negative voltage spikes at the gate during switching and can exceed the VGS(th) to cause shoot-through. A 10-100 Ohm gate resistor dampens ringing, while a 10kOhm gate-source pull-down resistor prevents accidental turn-on during power-up. Source: Infineon design guidelines for TO-220 HEXFETs.
Do not assume VGS=5V (logic-level) will fully enhance the IRF3710ZPBF - it requires 10V VGS for the specified 18 mOhm RDS(on). Driving at 5V may leave the FET in partial enhancement with 5-10x higher RDS(on) and severe self-heating. Use a gate driver IC such as IR2104SPBF for half-bridge applications, or a dedicated bootstrap driver for high-side switches. Also, the metal tab is electrically connected to the Drain - the heatsink may need electrical isolation with a thermal pad (e.g., Bergquist Sil-Pad) if the heatsink is grounded or shared with the Source of another FET.
For switching frequencies above 100 kHz, add a small RC snubber (e.g., 10 Ohm + 1 nF) across the drain-source to dampen voltage ringing caused by parasitic inductance in the load path. Place the snubber as close to the drain and source pins as possible. A ferrite bead on the drain lead can also help reduce conducted EMI on the DC bus. For synchronous rectifier applications, ensure the body diode reverse recovery time (trr) of the IRF3710ZPBF is compatible with the converter dead-time - the HEXFET body diode is relatively slow, so a small external Schottky anti-parallel diode may be required in high-frequency designs. Source: Infineon datasheet application notes.
Informações de conformidade
RoHS compliant (PBF suffix indicates lead-free finish). JEDEC normal-level qualification per Infineon datasheet. AEC-Q101 automotive grade available as IRF3710ZS-7PPBF variant - the standard IRF3710ZPBF is not automotive qualified.
