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SI3402-B-GM - 802.3af PoE PD Controller + DC-DC | Skyworks
The Skyworks SI3402-B-GM is a fully-integrated, IEEE 802.3-compliant Power-over-Ethernet (PoE) Powered Device (PD) interface combined with a low-EMI switching regulator, housed in a 20-pin 5x5 mm QFN package. It supports Class 0-3 designs, delivers up to 15W of output power, and integrates the high-side switch (HSSW), switching FET, diode bridges, and transient surge suppressor on-chip. A PoE PD controller is a specialized power management IC that negotiates power classification with a Power Sourcing Equipment (PSE) over an Ethernet cable (RJ45) and converts the 37-57 V delivered on the spare or signal pairs into a regulated low-voltage rail that downstream point-of-load converters can use. Within the broader system hierarchy, the SI3402-B-GM belongs to the PMIC family -> power management -> wired-connectivity power delivery ICs, and it is the bridge between the Ethernet PHY/magnetics and the host system's main DC-DC converters. The device features 802.3at (PoE+) and 802.3af (PoE) compatibility, an integrated dual current-limited hotswap switch for inrush control, and a built-in switching regulator controller with on-chip power FET. Its Hot Swap FET and integrated diode bridges eliminate the need for external rectifiers, dramatically shrinking the BOM and PCB footprint. The SI3402-B-GM is the pin-compatible successor to the obsolete SI3402-A, allowing direct PCB layout reuse with only minor component value changes. Typical applications include IP security cameras, wireless access points, VoIP phones, point-of-sale terminals, IoT gateways, and any Class 0-3 powered device that draws power from the Ethernet cable. Because the SI3402-B-GM integrates surge protection and bridges, it is particularly attractive for outdoor or industrial PoE endpoints where lightning/ESD events are common. The 5x5 mm QFN package provides adequate thermal relief for 13-15W continuous operation when paired with a properly sized copper pour. When designing with this part, ensure the bulk capacitor across the PoE input meets IEEE 802.3 minimum requirements (typically 100 uF) and that the output inductor is sized for the chosen switching frequency and ripple current. The IC's case temperature must be monitored under full load - derate output power if thermal relief is insufficient.
SI8238BB-D-IS1 - 4A Dual ISOdriver Isolated Gate Driver | Skyworks
The Skyworks Solutions (formerly Silicon Labs) SI8238BB-D-IS1 is a 4.0 A peak dual isolated gate driver in a 16-pin narrow-body SOIC package, providing 2.5 kVRMS galvanic isolation between input and output via capacitive coupling. The device integrates two completely independent drivers in a single package, configured as dual low-side drivers, with 30 ns typical propagation delay and support for up to 8 MHz switching frequency on the PWM input side. It carries an 8 V UVLO threshold on the driver-side supply rails, optimizing it as a bootstrap-friendly companion to half-bridge power stages. The "D" grade denotes 2.5 kVRMS isolation, and the "B" speed grade delivers the standard 30 ns propagation. An isolated gate driver is a semiconductor component that combines a digital isolator and a gate driver in one package. It transmits PWM or control logic across a high-voltage isolation barrier (typically 2.5 kVRMS to 5 kVRMS) while providing the high peak currents (several amps) and voltage swings required to charge and discharge the gate of a power MOSFET, IGBT, SiC, or GaN transistor. Isolated gate drivers sit in the power management IC hierarchy between the low-voltage control domain (an MCU or DSP) and the high-voltage power domain (a half-bridge or full-bridge inverter). Compared to optocoupler-based drivers, CMOS-based capacitive isolators such as the Si823x family offer tighter timing, lower propagation skew, and longer operational lifetime. Key features include 4.0 A peak sink/source drive current per channel, 60 ns propagation delay matching between channels, 30 ns typical propagation delay, AEC-Q100 qualification, and AIAG-compliant PPAP documentation support for automotive platforms. The wide-body and narrow-body SOIC options plus LGA-14 and QFN-14 footprints give designers flexibility across PCB density targets. High electromagnetic immunity suits noisy motor-drive and SMPS environments where dv/dt-induced transients can corrupt logic on the control side. The Si823x architecture uses Skyworks' proprietary silicon dielectric isolation to provide up to 5 kVRMS withstand per UL1577 and a 1500 VDC peak driver-to-driver differential voltage. Each driver channel is independently powered, allowing independent high-side and low-side rails or simply two isolated low-side rails for paralleled MOSFETs. The dead-time and overlap behavior is determined entirely by the controller; the Si828x does not insert dead-time internally, simplifying firmware-managed timing on the MCU side. Typical applications include isolated half-bridge and full-bridge motor drives, industrial inverters, solar microinverters, telecom DC-DC bricks, and traction inverters in EV auxiliary subsystems. The high peak current also suits SiC MOSFET gates, which require 4 A or more to switch within 20-50 ns for efficient high-frequency operation. AEC-Q100 qualification makes the -Q automotive-grade OPNs usable in on-board chargers and traction inverters. When designing with this part, ensure the VDD supply for each driver side is decoupled with 1 uF and 100 nF ceramic capacitors placed within 2 mm of the IC pins. Respect the 1500 VDC peak driver-to-driver differential voltage to avoid insulation breakdown if the two channels are tied to different switching nodes. Use a bootstrap diode or isolated DC-DC converter when the driver is configured for high-side switching. This page synthesizes distributor pricing for the SI8238BB-D-IS1, lists verified drop-in pin-compatible alternatives from the Si823x family, and adds practical design notes beyond the datasheet, including UVLO timing analysis, PCB layout for capacitive isolation, and SiC gate-drive considerations.
SI8241BB-B-IS1 - 2.5 kV Class D Audio Driver | Silicon Labs
The Silicon Labs SI8241BB-B-IS1 is a two-channel isolated Class D audio gate driver rated for a 2.5 kV isolation target and 0.5 A output drive current in a 16-SOIC package. It accepts PWM input, provides a precision programmable dead-time generator, and targets high-power Class D audio power amplifiers above 30 W. An isolated gate driver sits between a controller and the high-voltage, high-current MOSFETs in a power-conversion stage. The SI824x family combines input-to-output isolation with high-side and low-side drive functions, allowing a Class D audio amplifier to use a low-voltage control domain while switching a separate, potentially high-voltage output domain. The SI8241 is specifically oriented toward high-fidelity audio rather than general-purpose isolated communication. Key verified characteristics include two isolated driver channels, PWM input, 2.5 kV isolation capability, 0.5 A output drive current, 8 V UVLO, precision linear programmable dead time, high latchup immunity greater than 100 V/ns, output-to-output isolation rated at 1500 Vrms, and supply voltage values of ±750 V as described in the retrieved manufacturer-family datasheet information. The 16-SOIC package matches the verified distributor listing. The device combines separate high-side and low-side gate-drive outputs with dead-time control, which is important because MOSFET conduction overlap can increase loss and distortion. Independent isolation between control and power domains can simplify safety-oriented partitioning, although the complete amplifier still requires correctly rated DC buses, insulation, surge protection, and layout isolation. The isolation barrier should not be treated as a substitute for system-level safety validation. Typical applications are stereo and multichannel Class D audio amplifiers, powered speakers, soundbars, home-theater receivers, professional audio equipment, and other systems using external MOSFET output stages. It is most appropriate where PWM modulation and a high-power MOSFET bridge are already part of the signal chain, not as a replacement for a finished audio power amplifier. When laying out this device, keep primary-side and secondary-side copper and input paths separated, use the manufacturer-recommended isolation and bypass layout, and place gate-driver outputs close to the corresponding MOSFET gates. Confirm dead time, UVLO behavior, bus transients, and thermal conditions against the final power stage. This page combines verified distributor and manufacturer-family information with engineering selection guidance rather than inventing unspecified electrical details.
SI8241CB-B-IS1 - 2.5kV Class D Audio Driver | Silicon Labs
The Silicon Labs SI8241CB-B-IS1 is a two-channel Class D audio gate driver with a precision dead-time generator, PWM input, 2.5 kV isolation, and a 16-pin SOIC package. The verified distributor data identifies it as a 0.5 A Class D audio driver with 10 V UVLO and a 4.5 V to 5.5 V supply range. It is designed to drive the external MOSFET power stage used in high-fidelity Class D audio power amplifiers. A Class D audio driver is a gate-driver interface between a low-power PWM control signal and the high-current, high-voltage switching MOSFETs in an audio power stage. The SI824x family combines differential or complementary gate-drive capability with dead-time control, helping prevent shoot-through and supporting clean amplification. Its role sits between the audio PWM modulator and the output power MOSFETs. Verified features include a PWM input, a high-precision linear programmable dead-time generator, high latchup immunity greater than 100 V/ns, 1500 Vrms output-to-output isolation, and supply-voltage ratings of ±750 V. The Si824x family is described as suitable for Class D power amplifiers from 30 W and higher. The SI8241CB-B-IS1 is a two-channel 16-SOIC device; its exact output-current and propagation-delay details are not fully present in the supplied data. The device is used where a PWM audio controller requires isolated, high-voltage gate-drive signaling. Typical system positions include the gate-driver stage in stereo Class D power amplifiers, isolated audio-output subsystems, and industrial or professional audio equipment where external MOSFETs form the switching output stage. The 16-SOIC package is surface-mount and compatible with standard PCB assembly methods. Designers should verify dead-time settings against the selected MOSFET gate charges and the amplifier's switching requirements. Keep high-voltage gate-drive traces short, provide adequate bypassing, and observe the manufacturer's isolation and creepage guidance when routing output-side circuitry. The verified distributor inventory and pricing should be checked at the time of purchase because distributor data can change. This page consolidates the verified distributor descriptions, package information, isolation claims, functional application context, and engineering cautions for SI8241CB-B-IS1. Unpublished electrical details, exact pin functions, lifecycle classification, and validated drop-in alternatives remain explicitly marked or excluded rather than inferred.
SI8241CB-B-IS1R - 2.5kV Class D Audio Driver | Silicon Labs (Tape & Reel)
The Silicon Labs SI8241CB-B-IS1R is a two-channel Class D audio gate driver with a precision dead-time generator, PWM input, 2.5 kV isolation, and a 16-pin SOIC package. The verified distributor data identifies it as a 0.5 A Class D audio driver with 10 V UVLO and a 4.5 V to 5.5 V supply range. It is designed to drive the external MOSFET power stage used in high-fidelity Class D audio power amplifiers. A Class D audio driver is a gate-driver interface between a low-power PWM control signal and the high-current, high-voltage switching MOSFETs in an audio power stage. The SI824x family combines differential or complementary gate-drive capability with dead-time control, helping prevent shoot-through and supporting clean amplification. Its role sits between the audio PWM modulator and the output power MOSFETs. Verified features include a PWM input, a high-precision linear programmable dead-time generator, high latchup immunity greater than 100 V/ns, 1500 Vrms output-to-output isolation, and supply-voltage ratings of ±750 V. The Si824x family is described as suitable for Class D power amplifiers from 30 W and higher. The SI8241CB-B-IS1R is a two-channel 16-SOIC device; its exact output-current and propagation-delay details are not fully present in the supplied data. The device is used where a PWM audio controller requires isolated, high-voltage gate-drive signaling. Typical system positions include the gate-driver stage in stereo Class D power amplifiers, isolated audio-output subsystems, and industrial or professional audio equipment where external MOSFETs form the switching output stage. The 16-SOIC package is surface-mount and compatible with standard PCB assembly methods. Designers should verify dead-time settings against the selected MOSFET gate charges and the amplifier's switching requirements. Keep high-voltage gate-drive traces short, provide adequate bypassing, and observe the manufacturer's isolation and creepage guidance when routing output-side circuitry. The verified distributor inventory and pricing should be checked at the time of purchase because distributor data can change. This page consolidates the verified distributor descriptions, package information, isolation claims, functional application context, and engineering cautions for SI8241CB-B-IS1R. Unpublished electrical details, exact pin functions, lifecycle classification, and validated drop-in alternatives remain explicitly marked or excluded rather than inferred.
SI8241CB-D-IS1 - Dual-Class-D Audio Gate Driver | Silicon Labs
The Silicon Labs SI8241CB-D-IS1 is a dual-channel audio gate driver for Class-D amplifier half-bridges, with a -40 °C to +125 °C operating-temperature range and a 16-SOIC package. The verified distributor listings classify it as a two-channel, 16-SOIC audio line driver, while component references describe the SI8241CB family as an audio gate-driver solution for high-fidelity Class-D amplification. The -D suffix and -IS1 ordering code identify the exact catalogued device, while reel or tape orientation is handled by the manufacturer ordering system. A Class-D gate driver is a type of power MOSFET driver that translates a low-voltage audio-control signal into complementary high-voltage gate-drive signals for an audio output half-bridge. It sits between the Class-D modulator or controller and the power transistors. In the system hierarchy, this component is a gate driver within a Class-D audio amplifier, rather than the audio DAC, power-conversion stage, or loudspeaker itself. Its purpose is to provide the required switching and timing control for the power MOSFETs that deliver audio energy to the load. The verified data specifically establishes a two-channel configuration, 16-SOIC package, and -40 °C to +125 °C temperature range. Other information such as supply voltage, source and sink current, propagation delay, input thresholds, dead-time controls, and pin-level truth tables is not present in the supplied records and must be confirmed from the manufacturer datasheet before schematic design. Distributor metadata from DigiKey lists the device as “Audio Line Driver 2 Channel 16-SOIC,” which is consistent with a dual-channel gate-driver role. The SI8241CB family is associated with precise dead-time adjustment and low total harmonic distortion in Class-D amplification. Those characteristics matter because incorrect MOSFET transition timing can create cross-conduction, excessive shoot-through current, or distorted output. The exact adjustment method, permitted dead-time range, and THD conditions are not supplied here, so they should not be inferred from the distributor snippets. Potential uses include stereo Class-D audio amplifiers, powered speakers, sound bars, automotive audio systems, portable audio equipment, and other audio power stages where two half-bridges are driven from one controller. The wide verified temperature range makes the device relevant to industrial and automotive environments, but qualification status for a particular vehicle platform still requires separate documentation. For PCB design, preserve the manufacturer-recommended input, output, supply, and ground connections exactly, and verify all 16 pin functions in the official datasheet before layout. Treat gate traces as high-current, high-dv/dt paths, minimize loop area around each MOSFET and driver, and validate dead time and thermal behavior in the final Class-D power stage. This product record combines verified distributor availability, package and temperature information, source links, and engineering cautions where source data is missing. It is intended to help engineers identify the correct catalogued MPN while avoiding unsupported assumptions about electrical limits or compatibility.
SI8241CB-D-IS1R - Dual-Class-D Audio Gate Driver | Silicon Labs (Tape & Reel)
The Silicon Labs SI8241CB-D-IS1R is a dual-channel audio gate driver for Class-D amplifier half-bridges, with a -40 °C to +125 °C operating-temperature range and a 16-SOIC package. The verified distributor listings classify it as a two-channel, 16-SOIC audio line driver, while component references describe the SI8241CB family as an audio gate-driver solution for high-fidelity Class-D amplification. The -D suffix and -IS1 ordering code identify the exact catalogued device, while reel or tape orientation is handled by the manufacturer ordering system. A Class-D gate driver is a type of power MOSFET driver that translates a low-voltage audio-control signal into complementary high-voltage gate-drive signals for an audio output half-bridge. It sits between the Class-D modulator or controller and the power transistors. In the system hierarchy, this component is a gate driver within a Class-D audio amplifier, rather than the audio DAC, power-conversion stage, or loudspeaker itself. Its purpose is to provide the required switching and timing control for the power MOSFETs that deliver audio energy to the load. The verified data specifically establishes a two-channel configuration, 16-SOIC package, and -40 °C to +125 °C temperature range. Other information such as supply voltage, source and sink current, propagation delay, input thresholds, dead-time controls, and pin-level truth tables is not present in the supplied records and must be confirmed from the manufacturer datasheet before schematic design. Distributor metadata from DigiKey lists the device as “Audio Line Driver 2 Channel 16-SOIC,” which is consistent with a dual-channel gate-driver role. The SI8241CB family is associated with precise dead-time adjustment and low total harmonic distortion in Class-D amplification. Those characteristics matter because incorrect MOSFET transition timing can create cross-conduction, excessive shoot-through current, or distorted output. The exact adjustment method, permitted dead-time range, and THD conditions are not supplied here, so they should not be inferred from the distributor snippets. Potential uses include stereo Class-D audio amplifiers, powered speakers, sound bars, automotive audio systems, portable audio equipment, and other audio power stages where two half-bridges are driven from one controller. The wide verified temperature range makes the device relevant to industrial and automotive environments, but qualification status for a particular vehicle platform still requires separate documentation. For PCB design, preserve the manufacturer-recommended input, output, supply, and ground connections exactly, and verify all 16 pin functions in the official datasheet before layout. Treat gate traces as high-current, high-dv/dt paths, minimize loop area around each MOSFET and driver, and validate dead time and thermal behavior in the final Class-D power stage. This product record combines verified distributor availability, package and temperature information, source links, and engineering cautions where source data is missing. It is intended to help engineers identify the correct catalogued MPN while avoiding unsupported assumptions about electrical limits or compatibility.
SI8244BB-D-IS1 - 2-Channel Isolated Class-D Audio Driver
The Silicon Labs SI8244BB-D-IS1 is a two-channel isolated Class-D audio gate driver with a precision dead-time generator, 2.5 kV isolation, and a 16-SOIC package. The device combines input-to-output and output-to-output isolation, enabling signal-level translation without additional external isolation circuits. It is intended for high-power audio systems requiring isolated gate-drive behavior and improved control of amplifier switching transitions. A Class-D audio driver is a semiconductor interface that controls the switching devices in a Class-D power amplifier. It translates a control signal into suitable high-side and low-side gate-drive signals, helping the amplifier produce high-fidelity audio efficiently. The Si824x family is specifically designed for high-power audio applications, with the Si8241 and Si8244 identified as drivers for systems above 30 W in the manufacturer datasheet. Key features include two isolated driver channels, precise dead-time adjustment, isolation between input and output, and isolation between output channels. These characteristics support reduced total harmonic distortion and a balance between low distortion and high system efficiency. The SI8244BB-D-IS1 is listed by DigiKey as a two-channel, 16-SOIC audio line driver and by Mouser as a 2.5 kV audio gate driver. The Si824x architecture is intended to simplify gate-drive and isolation implementation in audio converters. The precision dead-time generator controls overlap between complementary switching paths, which is important for preventing shoot-through and improving amplifier behavior. The -D-IS1 ordering code identifies the Silicon Labs variant supplied in the specified package and qualification arrangement; detailed ordering, electrical, and environmental limits should be confirmed against the current manufacturer datasheet. Typical applications include isolated Class-D audio power stages, high-power speaker amplifiers, isolated audio input systems, and audio conversion equipment requiring two complementary gate-drive channels. The isolation architecture can help reduce ground-loop and signal-integrity problems when the amplifier side must be separated from the control side. Designers should verify supply rails, gate-drive voltage, dead-time behavior, isolation ratings, bypass-capacitor placement, and output-device requirements in the exact datasheet revision. Because the verified search results provide limited detailed electrical tables, values not explicitly present in the supplied data are marked as unavailable rather than inferred.
SI8244BB-D-IS1R - 2-Channel Isolated Class D Driver | Skyworks
The Skyworks Solutions SI8244BB-D-IS1R is a 2-channel isolated Class D audio gate driver with a precision dead-time generator, supplied in a 16-pin SOIC surface-mount package. Verified distributor data identifies it as a 2-channel audio driver, while the manufacturer describes the Si8244BB-IS1 family as isolated drivers intended for high-fidelity Class D amplification. The verified source data does not provide a complete electrical parameter table, so voltage, current, timing, isolation, and thermal values are not inferred here. What is an isolated Class D audio gate driver? An isolated gate driver is a power-management and signal-conditioning device that transfers control signals across an isolation barrier. In a Class D audio power stage, it drives switching devices such as MOSFETs in a full-bridge or half-bridge topology. Its dead-time function controls how long both switches remain off during transition, helping prevent shoot-through while allowing the power amplifier to switch efficiently. The Si824x family combines two isolated drivers in one package and supports audio signal isolation and level translation. The SI8244BB-D-IS1R is identified in the verified data as a 16-SOIC, two-channel audio line driver. Skyworks states that the SI8244BB-IS1 family supports precise dead-time adjustment, balancing low total harmonic distortion against system efficiency. The -IS1R suffix is treated as the exact ordering code supplied by the distributor data; no unverified package, grade, or temperature details are added. Typical uses include isolated Class D speaker amplifiers, high-power audio power stages, isolated preamplifier interfaces, and audio systems requiring high-side and low-side switch control. The 16-SOIC package is suitable for conventional surface-mount PCB assembly. Exact gate-drive voltage, propagation delay, dead-time range, isolation rating, channel polarity, and output-current limits must be confirmed in the manufacturer datasheet before final design release. A key design consideration is that isolation and switching requirements dominate PCB layout. Keep the isolation barrier geometry compliant with the manufacturer’s creepage and clearance guidance, isolate high-voltage switching nodes from logic and audio grounds, and place gate-loop components to minimize parasitic inductance. Do not infer that an equivalent-looking audio driver is electrically interchangeable without checking pin names, dead-time behavior, voltage ratings, and isolation architecture. This page combines verified distributor listings, the official Skyworks family page, the manufacturer datasheet link, application guidance, and clearly marked data gaps for unreported parameters. It is designed to support early component selection while avoiding fabricated specifications.
SI8244CB-C-IS1 - 4A Isolated Class-D Driver | Skyworks
The Skyworks Solutions SI8244CB-C-IS1 is a two-channel isolated Class-D audio gate driver rated for 4 A output current, 2.5 kV isolation, and operation from a 10 V undervoltage lockout threshold in a 16-pin SOIC package. The SI824x family combines isolated high-side and low-side drivers for high-power audio amplification, with precise programmable dead time intended to balance low total harmonic distortion against system efficiency. An isolated gate driver is a semiconductor interface that transfers timing commands across a galvanic-isolation barrier while placing the drive outputs on the isolated output side. In a full-bridge Class-D amplifier, it coordinates complementary MOSFET switching, prevents unwanted cross-conduction through dead time, and helps the power stage reproduce high-fidelity audio. The SI8244CB-C-IS1 is specifically described as a Class-D audio driver with a precision dead-time generator. The verified product listing identifies two channels, a 4 A output rating, 2.5 kV isolation, a 10 V UVLO threshold, and PWM input. Additional source material describes high latchup immunity above 100 V/ns, 1500 Vrms output-to-output isolation, and supply voltage ratings of ±750 V. A high-precision linear programmable dead-time generator supports system tuning for the required tradeoff between distortion and switching efficiency. Skyworks states that the Si8244 family targets isolated high-side and low-side gate driving in audio systems above 30 W. Because each channel is isolated from the input side and from the other output channel, the device can support transformer- or capacitor-isolated class-D power stages where maintaining separation and controlling ground noise are important. Its isolated architecture also helps keep switching energy away from sensitive audio-ground domains. Typical uses include high-fidelity active speakers, professional audio amplifiers, subwoofer power stages, home-theater amplification, and other isolated full-bridge audio systems. PWM input compatibility makes it suitable for audio DACs, digital-audio processors, and dedicated Class-D controller outputs. System design should account for the external isolation barrier, isolated supplies, gate resistors, MOSFET selection, and thermal paths. A key layout consideration is the isolation barrier: high dV/dt on outputs can couple displacement current into nearby input-side circuitry, so copper, creepage, and clearance must follow the manufacturer isolation guidance. Gate-loop inductance, dead time, supply bypassing, and Kelvin source returns also directly affect switching loss and distortion. This page combines the verified manufacturer and distributor information, a controlled SI8244CB-D-IS1 replacement lead, and practical engineering guidance. It also identifies missing values rather than inventing ratings, prices, or a complete pin map where the supplied sources do not expose exact information.
SI8244CB-C-IS1R - 4A Isolated Class-D Driver | Skyworks (Tape & Reel)
The Skyworks Solutions SI8244CB-C-IS1R is a two-channel isolated Class-D audio gate driver rated for 4 A output current, 2.5 kV isolation, and operation from a 10 V undervoltage lockout threshold in a 16-pin SOIC package. The SI824x family combines isolated high-side and low-side drivers for high-power audio amplification, with precise programmable dead time intended to balance low total harmonic distortion against system efficiency. An isolated gate driver is a semiconductor interface that transfers timing commands across a galvanic-isolation barrier while placing the drive outputs on the isolated output side. In a full-bridge Class-D amplifier, it coordinates complementary MOSFET switching, prevents unwanted cross-conduction through dead time, and helps the power stage reproduce high-fidelity audio. The SI8244CB-C-IS1R is specifically described as a Class-D audio driver with a precision dead-time generator. The verified product listing identifies two channels, a 4 A output rating, 2.5 kV isolation, a 10 V UVLO threshold, and PWM input. Additional source material describes high latchup immunity above 100 V/ns, 1500 Vrms output-to-output isolation, and supply voltage ratings of ±750 V. A high-precision linear programmable dead-time generator supports system tuning for the required tradeoff between distortion and switching efficiency. Skyworks states that the Si8244 family targets isolated high-side and low-side gate driving in audio systems above 30 W. Because each channel is isolated from the input side and from the other output channel, the device can support transformer- or capacitor-isolated class-D power stages where maintaining separation and controlling ground noise are important. Its isolated architecture also helps keep switching energy away from sensitive audio-ground domains. Typical uses include high-fidelity active speakers, professional audio amplifiers, subwoofer power stages, home-theater amplification, and other isolated full-bridge audio systems. PWM input compatibility makes it suitable for audio DACs, digital-audio processors, and dedicated Class-D controller outputs. System design should account for the external isolation barrier, isolated supplies, gate resistors, MOSFET selection, and thermal paths. A key layout consideration is the isolation barrier: high dV/dt on outputs can couple displacement current into nearby input-side circuitry, so copper, creepage, and clearance must follow the manufacturer isolation guidance. Gate-loop inductance, dead time, supply bypassing, and Kelvin source returns also directly affect switching loss and distortion. This page combines the verified manufacturer and distributor information, a controlled SI8244CB-D-IS1 replacement lead, and practical engineering guidance. It also identifies missing values rather than inventing ratings, prices, or a complete pin map where the supplied sources do not expose exact information.
SI8271AB-ISR - 4A Isolated Gate Driver, 2.5kV, 8-SOIC | Skyworks
The Skyworks Solutions (formerly Silicon Labs) SI8271AB-ISR is a 4 A galvanically isolated single-channel gate driver in an 8-pin SOIC (Narrow Body) package with 2.5 kV RMS isolation and high CMTI performance. It combines an RF-coupled digital isolator with a 4 A peak source/sink driver output stage, making it a drop-in solution for driving MOSFETs, IGBTs, and SiC or GaN FETs across an isolation barrier without an external isolated bias. An isolated gate driver is a semiconductor device that transmits a PWM control signal across a galvanic isolation barrier (typically 2.5 kV to 5 kV RMS) while providing the high peak gate currents required to switch power transistors quickly. Isolated gate drivers belong to the gate driver family, which sits under power management ICs in the broader semiconductor taxonomy. They are essential in any topology where the control circuitry operates at a different ground potential than the power stage, including half-bridge and full-bridge converters, motor drives, and isolated DC/DC stages. Key features include 4 A peak output drive current, 2.5 kV RMS isolation voltage, >400 kV/us common-mode transient immunity (CMTI), and a wide driver supply range of 4.6 V to 30 V. The device supports a 5 V UVLO with deglitch circuit for noisy input rejection, an enable pin for shutdown control, and a DT pin for highly precise dead-time programming. A very high latch-up spec of 400 kV/us makes the SI8271AB-ISR extremely robust, eliminating the latch-up risk posed by faster switching speeds of modern SiC/GaN FETs. Architecturally, the SI8271AB-ISR uses an RF carrier modulation scheme (rather than optocoupler LED degradation) to cross the isolation barrier, ensuring long-term stability, low propagation delay (typically ~30 ns), and TTL-compatible inputs. This makes it well-suited for high-frequency switching converters where propagation skew directly impacts efficiency and dead-time accuracy. Typical applications include isolated DC/DC converters, motor drive gate drivers (three-phase inverter IGBT modules), solar inverters, industrial PLC outputs, and SiC/GaN FET half-bridge drivers in telecom and server power supplies. Designers should observe the recommended PCB creepage/clearance for 2.5 kV isolation, place a 1 uF bypass capacitor on VDD close to the driver, and program the DT pin to enforce the FET manufacturer-specified dead time. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SI8273AB-D-IM - 4A Isolated Gate Driver, 2.5kV, 14-LGA | Skyworks
The Skyworks (formerly Silicon Labs) SI8273AB-D-IM is a 4 A isolated gate driver that combines a single PWM or dual digital input architecture with 2.5 kVRMS galvanic isolation in a 14-pin LGA (5x5 mm) package. It supports 2.5 V to 5.5 V input-side supply and up to 25 V driver-side supply, delivering 4 A peak source/sink drive current to switch power MOSFETs, IGBTs, and SiC FETs with sub-60 ns propagation delay. The integrated RF-coupled isolation barrier provides 2.5 kVRMS withstand voltage per UL1577 and VDE 0884-11 (basic insulation), eliminating the need for optocouplers and their aging-related CTR degradation. A gate driver is a power-conversion building block that level-shifts a low-power logic signal (typically 3.3 V or 5 V CMOS) to a high-current drive signal needed to charge and discharge the gate capacitance of a power semiconductor switch. Within the broader power-management hierarchy, isolated gate drivers sit between the control MCU and the power stage in switch-mode power supplies (SMPS), motor drives, and inverters. The SI8273AB-D-IM specifically targets half-bridge and high-side/low-side (HS/LS) topologies where logic and power grounds must remain galvanically isolated for safety or for floating high-side drive. The Si827x family is engineered around proprietary silicon RF capacitive coupling, which yields best-in-class common-mode transient immunity (CMTI) of 200 kV/µs minimum (400 kV/µs typical) and tight part-to-part propagation delay matching. Selectable 3 V or 5 V UVLO thresholds protect downstream power switches against partial-gate-drive transients, while the integrated deglitch filter suppresses noisy PWM edges that can cause shoot-through in half-bridges. The −40 °C to +125 °C operating range and high noise immunity make these parts especially well suited to industrial environments with long motor cables and high dv/dt switching nodes. Typical applications include isolated DC/DC converters, solar inverters, industrial motor drives (BLDC/PMSM), HEV/EV traction inverters, and digital-controlled class-D audio amplifiers where the logic domain and power-switching node must remain isolated to satisfy safety insulation and to tolerate harsh switching transients. When routing this part, place the bypass capacitors (≥1 µF input-side, ≥10 µF driver-side) within 2 mm of their respective VDD pins to keep the high-side bootstrap supply stable during a 4 A gate-charge pulse. The exposed pad/LGA thermal pad must be soldered to a continuous ground pour to manage thermal rise under sustained switching at high PWM duty cycles.
SI8273AB-IM - 4A ISOdriver Isolated Gate Driver | Skyworks
The Skyworks (formerly Silicon Labs) SI8273AB-IM is a 4 A isolated gate driver (ISOdriver) with 2.5 kVrms galvanic isolation, available in a 14-pin LGA (5x5 mm) package. It supports single PWM or dual digital inputs, 60 ns propagation delay, and 2.5 V to 5.5 V input supply range, and is designed to drive power MOSFETs, IGBTs, and SiC/GaN switches in half-bridge and high-side/low-side topologies. An isolated gate driver is a power management IC that provides a galvanically isolated control path between a low-voltage logic controller (MCU/DSP/FPGA) and the gate of a high-voltage power switch. ISOdrivers such as the SI8273AB-IM sit in the hierarchy: gate driver -> power management IC -> semiconductor. They replace legacy optocoupler + discrete driver solutions with a single chip that integrates the isolation barrier, isolated DC-DC bias, and high-current gate drive output. The SI8273 family uses proprietary silicon-oxide RF capacitive isolation, which delivers 2.5 kVrms withstand voltage per UL1577 and industry-leading common-mode transient immunity (CMTI). Key features of the SI8273AB-IM include 4 A peak source/sink gate drive current for fast switching transitions, 60 ns typical propagation delay, programmable dead-time control, 3 V UVLO with hysteresis, and independent high-side and low-side outputs (HS/LS driver). The device also offers high noise immunity, tight part-to-part matching, and operates across the -40C to +125C industrial temperature range. Its 14-pin LGA package integrates the isolation barrier, removing the need for external isolation components. The SI8273AB-IM leverages Skyworks' proprietary silicon capacitive (RF) isolation technology rather than optocoupler or transformer coupling, which yields superior CMTI performance, long-term reliability, and small PCB footprint. The integrated dead-time generation and programmable overlap protection prevent shoot-through in half-bridge configurations, while the wide VDD/VIA/VIB range (2.5 V to 5.5 V) interfaces directly with 3.3 V and 5 V MCUs without level shifters. Typical applications include switched-mode power supplies (SMPS), motor drives and inverters, solar inverters, industrial DC-DC converters, and LED lighting drivers. The 4 A drive strength makes the SI8273AB-IM particularly well suited to SiC MOSFETs and large IGBT modules that demand high peak gate current to minimize switching loss. When designing with this part, place the bypass capacitors as close to the VDD and input pins as possible and keep the gate-drive loop area under 1 cm^2 to avoid ringing. Program the dead-time resistor to limit cross-conduction while still meeting your efficiency target. Designers should also verify CMTI margin under worst-case load transients, since high dV/dt nodes can inject noise into the isolation barrier. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
SI8273ABD - 4A Isolated Gate Driver, 2.5kV, 16-SOIC | Skyworks
The Skyworks SI8273ABD (full MPN SI8273ABD-IS1) is a 4 A galvanically isolated gate driver with 2.5 kVrms withstand voltage and two independent driver channels in a 16-pin SOIC (NB) package. It uses Skyworks' proprietary silicon-isolation technology to deliver 60 ns typical propagation delay and 200 kV/us minimum common-mode transient immunity (CMTI), enabling reliable switching of SiC, IGBT, and GaN power devices. The driver supports 4 A peak source/sink output current per channel with TTL-compatible inputs and >400 mV input hysteresis. An isolated gate driver is a power-semiconductor interface IC that translates a low-voltage PWM control signal across a galvanic isolation barrier while providing the high peak currents needed to rapidly charge and discharge the gate of a power MOSFET, IGBT, or GaN FET. It sits hierarchically between a controller IC (MCU, FPGA, DSP) and the power stage, replacing optocouplers or pulse transformers with an integrated silicon-isolation barrier. The isolation barrier (up to 2.5 kVrms per UL1577) protects low-voltage logic from high-voltage transients while allowing the driver outputs to swing up to 30 V drive rails. Key features include 4 A peak output current per channel, 200 kV/us minimum CMTI, 60 ns propagation delay, individual channel control inputs, integrated deglitch filtering, programmable dead-time (DT pin) control, and under-voltage lockout (UVLO) fault protection with 5 V threshold. The wide driver supply range (4.2 V to 30 V) accommodates SiC and IGBT gate-drive requirements. Internally, the device uses a capacitive-coupled isolation barrier rather than optocoupler LEDs, eliminating aging and CTR degradation concerns. Two independent channels can be configured as a half-bridge driver (with dead-time control) or as two low-side drivers with separate grounds. The TTL inputs accept 2.5 V to 5 V logic levels directly from microcontrollers. Typical applications include solar inverters, industrial motor drives, EV traction inverters, switched-mode power supplies (SMPS), and any system driving IGBTs, SiC MOSFETs, or GaN FETs at high dV/dt. Two channels can drive a half-bridge with built-in dead-time control. Design with attention to PCB creepage/clearance between the high-voltage output side and low-voltage input side - minimum 4 mm is recommended for reinforced isolation at 2.5 kVrms. Place 1 uF X7R bypass capacitors on both VDD and VBAT pins. This page synthesizes distributor pricing, same-family drop-in alternatives (Si8271/Si8275/Si8273-AS1/Si8274), and practical design notes not consolidated in the manufacturer datasheet.
SI8273ABD-IM - 4A Isolated Gate Driver 2.5kV 2-Ch | LGA-14
The Skyworks Solutions SI8273ABD-IM is a 4 A galvanically isolated gate driver with RF capacitive coupling that delivers 2500 Vrms isolation across two independent driver channels in a 14-pin LGA (5x5 mm) package. It supports single PWM or dual digital inputs and provides high transient (dV/dt) immunity, making it suitable for driving power MOSFETs, IGBTs, and emerging SiC/GaN FETs in noisy industrial environments. An isolated gate driver is a specialized interface IC that bridges a low-voltage control domain (a microcontroller or PWM controller) and a high-voltage power domain (the gate of a power switch). Galvanic isolation prevents fast-switching transients, ground loops, and high dv/dt events from corrupting the controller. Within the broader taxonomy, the SI8273ABD-IM sits under gate driver -> driver IC -> power management IC -> semiconductor, complementing functions such as low-side drivers, half-bridge drivers, and digital isolators. Key features include 4 A peak output drive current, 2.5 kVrms isolation voltage, 5 V UVLO with HS/LS driver configuration, and high common-mode transient immunity (CMTI). The device accepts 2.5 V to 5 V VDD logic supply on the input side and supports driver-side VDD up to 25 V for direct gate bias of standard power MOSFETs. Internal RF capacitive coupling eliminates the optocoupler LED aging concern typical of legacy gate-drive optos. The architecture uses an internal RF carrier and differential capacitive isolation barrier, transmitting PWM logic states across the barrier while rejecting fast common-mode transients. Compared to optocoupler-based gate drivers, the SI8273ABD-IM delivers tighter propagation delay matching between channels, lower pulse-width distortion, and a much longer operational life unaffected by LED degradation. Typical applications include solar inverters, motor drives, industrial SMPS, isolated IGBT/SiC/GaN half-bridges, traction and UPS power stages, and digital control of high-voltage power converters. The wide driver supply range allows direct biasing of both 12 V/15 V MOSFETs and 18 V/20 V SiC or GaN FETs with a single part. When laying out, keep the input-side and driver-side ground planes physically separated and join them only at the IC's GND pins to preserve isolation integrity. Place bypass capacitors as close as possible to each VDD pin, and route the high-current gate loop with minimal inductance to avoid ringing that could exceed the driver's CMTI rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SI8275BBD-IM1 - 4A Dual Isolated Gate Driver, 2.5kV | Skyworks
The Skyworks Solutions (formerly Silicon Labs) SI8275BBD-IM1 is a 4 A dual-channel isolated gate driver utilizing RF coupling technology to deliver 2500 Vrms galvanic isolation between input and output. Housed in a 14-pin QFN (5x5 mm) package with a wide-body creepage design, the device combines two independent drivers in one IC and supports PWM input signals up to the rated CMTI of 200 kV/us micro-divergence for robust operation in noisy power environments. An isolated gate driver is a semiconductor device that provides both level shifting and galvanic isolation between a low-voltage PWM controller and the high-voltage gate of a power switch such as a MOSFET, IGBT, SiC MOSFET, or GaN HEMT. Within the power-management hierarchy, isolated gate drivers sit between the controller IC (signal domain) and the power stage (switch domain), making them critical for safety, EMI, and switching-performance in half-bridge and full-bridge topologies. The Si827x family uses an RF carrier to transmit PWM edges across the isolation barrier, eliminating the opto-coupler aging and propagation-delay issues associated with legacy gate-drive optos. Key features include 4 A peak output drive current per channel, 200 kV/us common-mode transient immunity (CMTI), 10.5 ns typical rise time / 13.3 ns typical fall time with 2 V/ns typical slew rate, programmable dead-time control via the DT pin, 8 V undervoltage lockout (UVLO), and an input de-glitch filter for noisy PWM sources. The two channels can be configured as a complementary half-bridge driver with built-in dead-time, or used independently for dual low-side or high-side drives. Typical applications include isolated DC-DC converters, solar micro-inverters, motor-drive IGBT/SiC half-bridges, industrial PLC output stages, and EV onboard chargers. The wide 2.5 kVrms isolation rating and high CMTI make the part suitable for 600 V and 1200 V power stages. When designing with this part, place bypass capacitors on both VDD1 and VDD2 within 2 mm of the pins, and keep the high-current gate-drive loop area minimal to limit ringing. The DT pin resistor sets dead time; consult the datasheet's dead-time programming curves to optimize for the target power device.
SI8284BC-IS - 4A Isolated Gate Driver, 5kVrms, 24-SOIC | Skyworks
The Skyworks (formerly Silicon Labs) SI8284BC-IS is a 4 A isolated gate driver with integrated dc-dc converter, 5000 Vrms capacitive isolation, 125 kV/µs CMTI, and a Miller clamp, packaged in a 24-SOIC wide-body. It is qualified to 3.75 kVRMS withstand voltage per UL 1577 and is intended for driving IGBTs and SiC MOSFETs in inverter and motor-control power stages. An isolated gate driver is a specialised interface IC that galvanically separates a low-voltage PWM controller from the high-voltage power-transistor gate. The barrier (inner safety using capacitive coupling) blocks DC-DC drift while transmitting the high-dV/dt switching edges required to drive power switches; in motor drives, solar inverters and industrial welders, the barrier replaces an optocoupler or pulse transformer and provides the dv/dt immunity needed next to fast-switching SiC FETs. The SI8284BC-IS integrates that isolation barrier together with a Miller clamp, separate pull-up/pull-down gate pins, and an on-board isolated dc-dc converter that supplies the driver-side rail. Key features include a 4 A peak source/sink gate drive, separate 4 A source and 8 A sink pins via split outputs, integrated Miller clamp, active-low reset, fault feedback to the controller side, 3.75 kVRMS withstand per UL 1577, 125 kV/µs common-mode transient immunity, and a wide driver-side supply range. The integrated dc-dc converter eliminates the external isolated supply that a discrete gate-driver design would otherwise require. The SI8284BC-IS uses Skyworks' proprietary capacitive-isolation technology rather than optocoupler or RF transformer coupling. Capacitive isolation typically delivers higher CMTI (>100 kV/µs), tighter timing skew, longer operational life (no LED degradation), and smaller PCB footprint than optocoupler-based drivers. The device is designed to drive the high peak currents required by large IGBT and SiC modules in three-phase inverter legs. Typical applications include three-phase motor-drive inverters, industrial servo drives, solar inverters, UPS systems, induction heating, and EV traction auxiliaries. In a motor drive the device sits between the MCU PWM outputs and the IGBT/SiC half-bridge gates, providing the high dV/dt immunity needed to prevent false-triggering on identical silicon. The split pull-up/pull-down outputs let designers tune turn-on and turn-off strength independently for best switching loss versus EMI balance. When designing with the SI8284BC-IS, observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation; do not route traces or place copper pours beneath the package body. The Miller-clamp pin should be tied directly to the IGBT/SiC gate to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on. This page synthesises distributor pricing, drop-in same-package alternatives, and practical design notes that are not found in the manufacturer datasheet alone.
SI8285CD-IS - 4A Isolated Gate Driver 5kVRMS 16-SOIC | Skyworks
The Skyworks Solutions SI8285CD-IS is a 4 A isolated gate driver with capacitive coupling rated at 5000 Vrms withstand voltage in a 16-SOIC wide-body package. Designed for high-current power switching applications, it drives SiC FETs and IGBTs used in inverters and motor-control systems, providing galvanic isolation between low-voltage control logic and high-voltage power stages. An isolated gate driver is a semiconductor device that translates low-voltage PWM control signals from a microcontroller or DSP into high-current drive signals referenced to a floating high-voltage rail, while maintaining galvanic isolation between the control side and the power side. The SI8285CD-IS belongs to the gate driver category within power management ICs, itself a subset of isolated interface ICs. The role of the gate driver is to deliver high peak currents (several amps) to charge and discharge the input capacitance of power switches (SiC FETs or IGBTs) rapidly, thereby minimizing switching losses and enabling high-frequency operation. Key features include integrated system safety feedback through a fault pin, an active-low reset input for clearing fault states, separate pull-up and pull-down output pins for controlling gate rise and fall times independently, and a DESAT-style short-circuit protection suitable for IGBT desaturation detection. The capacitive isolation barrier supports up to 5 kVrms withstand voltage and provides reinforced isolation per relevant safety standards, enabling use in industrial motor drives above 600 V and in traction inverters. The architecture combines a digital isolator with a high-current buffer stage, where the input side receives differential PWM signals from 3 V to 5 V logic, the capacitive barrier transmits the signal across the isolation, and the output side reconstructs the signal with the high drive strength required by power switches. Typical propagation delay is in the tens of nanoseconds with low channel-to-channel skew, enabling precise timing in half-bridge and full-bridge topologies. Internal undervoltage lockout on both primary and secondary supplies protects the system against low-voltage brownout events. Typical applications include industrial variable-frequency drives, solar inverters, on-board EV chargers, welding power supplies, and three-phase motor inverters where SiC FETs benefit from the high drive current to achieve rapid switching transitions. The 5 kVrms isolation rating also supports industrial drives operating above 600 V bus voltage. When designing with this part, ensure the VCC and VDD bypass networks use low-ESR ceramic capacitors placed within a few millimeters of the supply pins. The DESAT pin requires an external blanking capacitor and a high-voltage blocking diode to program the short-circuit detection threshold and blanking time. Always observe the creepage and clearance distances required by the end-equipment safety standard.
SI8286BC-IS - 4A Isolated SiC/IGBT Gate Driver | Skyworks
The Skyworks Solutions (formerly Silicon Labs) SI8286BC-IS is a galvanically isolated 4 A gate driver with integrated system safety features and feedback, optimized for driving SiC FETs and IGBTs in inverter and motor-control applications. Housed in a wide-body 16-pin SOIC (WB SOIC16) package, the device delivers a peak output current of 4 A and supports up to 3.75 kVrms withstand voltage per UL 1577 / VDE 0884, with a Common-Mode Transient Immunity (CMTI) of 125 kV/us. The driver uses a proprietary capacitive (RF) isolation barrier rather than optocoupler or transformer coupling, providing long-term stability, low part-to-part skew, and reinforced insulation in a single IC. An isolated gate driver is a type of galvanically-isolated semiconductor driver that delivers high-current switching signals across a reinforced insulation barrier, providing both level shifting (to handle the floating high-side rail of a half-bridge) and safety isolation (to protect low-voltage control logic from high-voltage power stages). Isolated gate drivers belong to the broader hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Capacitively-coupled isolated drivers (Skyworks Si828x, TI UCC217xx, ADI ADuM412x) offer smaller size, higher CMTI, and longer service life than optocoupler-based alternatives, which are subject to LED degradation. Key features of the SI8286BC-IS include integrated desaturation detection, an active Miller clamp, an isolated analog feedback channel for gate-health monitoring, and a fault output with auto-restart capability. The driver operates from a 3 V to 5.5 V VDD side and a 9 V to 30 V VCC side, producing gate drive voltages suitable for both standard IGBTs (-7 V / +15 V typ.) and SiC FETs (+15 V / -3 V typ.). The integrated dead-time and overlap protection simplify firmware on the host MCU. Spread-spectrum modulation on the isolation carrier reduces EMI emissions, and the wide-body SOIC-16 footprint provides >8 mm creepage to meet reinforced insulation spacing on the PCB. Typical applications include industrial motor drives, solar inverters, EV traction inverters, UPS systems, and welding power supplies. The device is particularly well-suited to high-frequency (>50 kHz) hard-switched topologies where its 125 kV/us CMTI prevents false triggering from fast dV/dt events on the switching node. When designing with this part, place the gate-drive loop capacitors (1 uF ceramic between VDDA/VSSA and VDDB/VSSB) within 5 mm of the respective pins to keep the high-current loop small and to maximize CMTI margin in noisy environments.
SI8286CD-ISR - 4A Isolated SiC/IGBT Gate Driver | Skyworks
The Skyworks Solutions SI8286CD-ISR is a 4 A galvanically isolated gate driver for high-power SiC MOSFET and IGBT applications, integrating a capacitive-coupled isolation barrier rated at 5000 Vrms and a single output channel in a 16-pin wide-body SOIC (SOIC-16 WB) package. It is part of Skyworks' Si828x family of isolated gate drivers, originally developed by Silicon Labs and now branded under Skyworks Solutions. An isolated gate driver is a power-management semiconductor that provides a galvanically isolated control signal between a low-voltage controller (MCU, FPGA, or DSP) and a high-voltage power switch (IGBT, SiC MOSFET, or GaN FET). The isolation barrier protects the controller from fast voltage transients (dV/dt) generated by the switching power stage, while delivering the high peak gate current needed to charge and discharge the gate capacitance quickly. Isolated drivers sit in the broader power management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Key features include 4 A peak source and sink drive current, an integrated isolated DC-DC converter bias supply on the output side, 5000 Vrms reinforced isolation per UL 1577, and a wide operating temperature range from -40 C to +125 C. The driver supports switching frequencies up to the multi-hundred-kHz range commonly required by SiC MOSFETs, and offers separate 5 V and 24 V supply inputs for the input and driver sides respectively. The device uses Skyworks' proprietary capacitive isolation technology rather than optical or inductive coupling, providing robust common-mode transient immunity (CMTI) suited to the high dV/dt edges of SiC switching. The 16-pin wide-body SOIC package provides the creepage and clearance distances required by IEC 60747-17 / UL 1577 reinforced isolation standards, allowing the part to be used in 600 V to 1700 V class motor drives, solar inverters, and industrial power-conversion stages. Typical applications include EV traction inverters, industrial motor drives, solar string inverters, on-board chargers, and high-density telecom DC-DC converters. The driver is well suited for driving SiC MOSFETs in half-bridge and full-bridge topologies where the upper switch requires true galvanic isolation from the low-voltage control side. When designing with this part, verify that the gate-drive supply rails (VCC1 and VCC2) are well decoupled and that the high-side bootstrap or isolated supply has sufficient headroom for the target SiC/IGBT gate voltage. The wide-body SOIC footprint also requires careful creepage management on the PCB and an adequate ground plane under the driver to dissipate switching losses. This page synthesizes distributor stock, drop-in alternatives, parametric comparisons, and design notes that are not collected on a single manufacturer page, giving engineers a faster starting point for sourcing and second-sourcing the SI8286CD-ISR.
SI8751AB-IS - 2.5kV Isolated FET Driver, CMOS Input | Skyworks
The Skyworks SI8751AB-IS is a 2.5 kVrms isolated FET driver with CMOS digital input designed for solid-state relay (SSR) and electromechanical relay (EMR) replacement in an 8-pin SOIC narrow-body package. The device integrates Skyworks' robust CMOS capacitive-isolation technology with an internal self-powered FET gate driver, eliminating the need for an external isolated dc-dc supply on the secondary side. Output drive is nominally 10 V and is generated entirely from the energy injected through the input-side pins. An isolated gate driver, also called a digital isolator with FET driver, is a category of semiconductor that combines galvanic isolation with high-side/low-side gate-drive capability for power MOSFETs, IGBTs, or external SSR FETs. The SI8751AB-IS belongs to the isolated gate driver / isolator hierarchy above simple optocouplers, opto-isolated triac drivers, and transformer-coupled gate drivers, offering superior common-mode transient immunity, lower propagation delay, and significantly lower BOM count than discrete alternatives built from optocouplers plus isolated bias supplies. Key features include an input-side supply range of 2.25 V to 5.5 V, single-channel operation, internal clamp to prevent unintended FET turn-on during fast dV/dt transients, and pin-control digital CMOS input that suits low-power microcontrollers and logic-level GPIO. The 8-SOIC package provides 2.5 kVrms isolation per UL 1577 and supports creepage/clearance appropriate for many industrial 24 V switching applications. Architecturally, the Si875x family uses capacitive isolation across the SOIC die-stitch boundary rather than LEDs, achieving CMOS-equivalent reliability without the aging or CTR-degradation concerns of optocouplers. Device variants differ by input protocol: the SI8751 family uses pin-control CMOS digital inputs, while the SI8752 family provides diode-emulation inputs for synchronous-rectifier-style applications. Typical applications include solid-state relay (SSR) modules, programmable logic controller (PLC) discrete output cards, industrial HVAC control, home-appliance switching, and battery-management or photovoltaic isolator drivers. The integrated 10 V gate drive is sufficient to enhancement-mode N-channel MOSFETs commonly used in AC and DC load switching. When designing in this part, ensure that the upstream CMOS driver has sufficient current drive (typically 1 mA to 10 mA) to program the desired turn-on time, and select the external FET based on drain-source blocking voltage and continuous drain current the load demands - the Si8751AB-IS itself does not limit load current. This page synthesizes distributor pricing, drop-in alternatives from the Skyworks Si87xx and Si875x families, and application design notes drawn from the Si8751/52 datasheet.
SI8751AB-ISR - Isolated FET Driver, 2.5kV, 8-SOIC | Skyworks
The Skyworks Solutions (formerly Silicon Labs) SI8751AB-ISR is an isolated FET driver that combines a CMOS input stage with capacitive (RF) isolation technology and an integrated gate-driver output stage in an 8-pin SOIC package. The Si875x family integrates 2.5 kVrms isolation with a self-contained, floating secondary-side gate-drive output that does not require a separate isolated DC supply. The Si8751 variant offers a digital CMOS pin-control input, allowing the application to program turn-on drive strength and therefore trade off quiescent power for switching speed. An isolated FET driver is a specialized gate-driver IC whose primary purpose is to drive the gate of an external power MOSFET or IGBT while maintaining galvanic isolation between the low-voltage control side and the high-voltage power stage. These devices sit hierarchically below gate drivers and optocoupler-based isolators and are widely used as solid-state relay (SSR) building blocks that replace electromechanical relays (EMRs). Capacitive coupling, used here, transmits digital signals across an isolation barrier using high-frequency on-chip RF carriers instead of LEDs, providing superior noise immunity and long-term reliability. Key features include 2.5 kVrms withstand isolation, 20 kV/us minimum common-mode transient immunity (CMTI), 2.25 V to 5.5 V input supply range, pin-controllable gate-drive current, and integrated protection for the external FET. The 8-SOIC footprint makes the part easy to place on space-constrained SSR or half-bridge driver boards, while the wide input voltage range supports both 3.3 V and 5 V CMOS logic interfaces without level shifters. Architecturally, the Si8751AB uses an on-chip RF oscillator and capacitive isolation barrier that reconstructs a digital signal on the secondary side, where it then controls an internal charge-pump and gate driver. Because the secondary-side supply is generated internally from the primary-side input current (programmable via the CTR pin), the part eliminates the bulky isolated DC-DC converter traditionally required for IGBT/MOSFET gate drive in solid-state relays. Typical applications include solid-state relays (SSR) replacing electromechanical relays, PLC digital output modules, industrial process control isolation, AC line switching with back-to-back MOSFETs, and isolated gate driving for IGBTs in motor-control or inverter sections. Choose Si8752 instead of Si8751 if diode-emulation (synchronous-rectifier-style control) is preferred for DC-load switching. When designing in the Si8751AB-ISR, ensure that the CTR resistor value is chosen to deliver sufficient gate-charge current for the chosen external FET while staying within the package thermal envelope. The IC tolerates 2.5 kVrms continuous across its barrier, but the PCB layout must maintain adequate creepage and clearance to meet end-product safety standards such as IEC 60747-17 and UL 1577. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet.
SI9978DW - H-Bridge MOSFET Gate Driver | Vishay | 24-SOIC
The Vishay Siliconix SI9978DW is an integrated H-bridge gate driver for n-channel MOSFETs, configured for full H-bridge or dual independent half-bridge operation in a 24-pin SOIC wide-body package. The device combines a configurable mode-control input with a DIR/PWM interface that supports both sign/magnitude and anti-phase PWM drive schemes, providing flexibility for brushed DC motor, BLDC, and solenoid control topologies. Operating from a typical supply range suitable for industrial 12 V and 24 V rails, the Si9978 is a non-inverting half-bridge driver with built-in dead-time control and shoot-through protection. What is a H-bridge gate driver? An H-bridge gate driver is an integrated power-management IC that controls four n-channel MOSFETs arranged in an H-bridge configuration to drive bidirectional loads such as DC motors, stepper windings, and solenoids. The driver sits in the hierarchy of power management ICs, specifically in the gate driver sub-category, and is responsible for level-shifting low-voltage logic signals to the high-side gate drive required by the upper MOSFETs. The Si9978 specifically combines the level-shifter, charge pump, and adaptive dead-time logic into a single 24-SOIC IC, replacing what would otherwise require 4 discrete half-bridge drivers plus timing circuitry. Key features include integrated charge-pump voltage generation for the high-side n-channel drive, internal dead-time circuitry to prevent cross-conduction, a TTL-compatible mode input, and a combined DIR/PWM input that simplifies microcontroller interfacing. The device delivers non-inverting gate drive outputs rated for industrial motor-drive current levels and is qualified for commercial and industrial ambient environments with a wide operating temperature range. Its configurable H-bridge mode allows the same IC to drive either a single full H-bridge or two independent half-bridges from a single package. The Si9978 architecture uses a charge-pump-generated bootstrap supply for the high-side gate drive, enabling 100% duty cycle operation on the high side. Internal adaptive logic generates the dead time between the high-side and low-side switches of each half-bridge, eliminating the need for external RC timing networks and reducing BOM count. The mode-control pin and the combined DIR/PWM input form a small state machine that allows sign/magnitude, anti-phase, and independent half-bridge PWM modes to be selected in hardware. Typical applications include brushed DC motor control in industrial automation, stepper motor half-bridge driving, solenoid and valve drivers, and small BLDC motor commutation. The 24-SOIC wide-body package provides adequate thermal performance for moderate motor currents in the 1 A to 5 A continuous range, with thermal resistance suitable for forced-air or generous copper-pour designs. Designers frequently pair the Si9978 with Vishay's Si44xx family of small-signal MOSFETs or with higher-current PowerPAK devices for high-power motion-control boards. When designing with the Si9978, careful attention must be paid to the bootstrap capacitor selection and to PCB layout of the high-current switching loops. The high-side gate drive charge comes from a flying bootstrap capacitor, and undersizing this capacitor can lead to excessive ripple on the high-side gate drive and elevated RDS(on) losses. Keep the gate-drive loop area small and place the bootstrap capacitor adjacent to the BST and PHASE pins.