DS24B33Q+T&R vs DS24B33+ 比較

詳細並排比較 DS24B33Q+T&R 由 Maxim Integrated 與 DS24B33+ 由 Analog Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Maxim Integrated
DS24B33Q+T&R DS24B33Q+T&R - 4Kb 1-Wire EEPROM, 6-TDFN | Maxim Integrated

DS24B33Q+T&R - 4Kb 1-Wire EEPROM, 6-TDFN | Maxim Integrated

DS24B33Q+T&R ✓ 啟用中
Analog Devices
DS24B33+ DS24B33+ - 4Kb 1-Wire EEPROM, TO-92 | Analog Devices

DS24B33+ - 4Kb 1-Wire EEPROM, TO-92 | Analog Devices

DS24B33+ ✓ 啟用中

規格比較

參數 DS24B33Q+T&R DS24B33+
品牌 Maxim Integrated Analog Devices
類別 Memory ICs EEPROM
生命週期狀態 啟用中 啟用中
記憶體類型 Non-volatile EEPROM (1-Wire) EEPROM (Non-Volatile)
記憶體容量 4 Kbit (4096 bits) 4 Kbit (4096 bits)
Memory Organization 16 pages x 256 bits 16 pages x 256 bits (16 pages x 32 bytes)
Scratchpad Size 32 bytes 32 bytes (256 bits)
介面 1-Wire (single-conductor) 1-Wire (single-conductor serial)
Write Cycle Time 2 us (scratchpad, typical) —
Operating Voltage 3.3 V / 5 V 2.8 V to 5.25 V
Unique ID 64-bit factory-programmed ROM ID —
Data Retention 40 years (typical) —
封裝 6-TDFN (3x3 mm) with Exposed Pad TO-92-3 (through-hole)
安裝類型 Surface Mount Through-Hole
工作溫度 -40 C to +85 C -40°C to +85°C
MSL 等級 1 (data undisclosed in sources) —
RoHS 狀態 Compliant Compliant
Family Code 0x23 (1-Wire) —
Write/Erase Endurance — 200K cycles per page
Unique ROM Registration — 64-bit factory-programmed laser ROM
Write/Erase Time (typical) — 2 µs (page write cycle)
腳位數 — 3
On-Chip CRC — CRC-16 generator

資料表與資源

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