DS24B33Q+T&R vs DS24B33+ 对比

详细并排对比 DS24B33Q+T&R 出自 Maxim Integrated 和 DS24B33+ 出自 Analog Devices。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Maxim Integrated
DS24B33Q+T&R DS24B33Q+T&R - 4Kb 1-Wire EEPROM, 6-TDFN | Maxim Integrated

DS24B33Q+T&R - 4Kb 1-Wire EEPROM, 6-TDFN | Maxim Integrated

DS24B33Q+T&R ✓ 量产中
Analog Devices
DS24B33+ DS24B33+ - 4Kb 1-Wire EEPROM, TO-92 | Analog Devices

DS24B33+ - 4Kb 1-Wire EEPROM, TO-92 | Analog Devices

DS24B33+ ✓ 量产中

规格对比

参数 DS24B33Q+T&R DS24B33+
品牌 Maxim Integrated Analog Devices
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.85 $1.92
存储器类型 Non-volatile EEPROM (1-Wire) EEPROM (Non-Volatile)
存储容量 4 Kbit (4096 bits) 4 Kbit (4096 bits)
Memory Organization 16 pages x 256 bits 16 pages x 256 bits (16 pages x 32 bytes)
Scratchpad Size 32 bytes 32 bytes (256 bits)
接口 1-Wire (single-conductor) 1-Wire (single-conductor serial)
Write Cycle Time 2 us (scratchpad, typical) —
Operating Voltage 3.3 V / 5 V 2.8 V to 5.25 V
Unique ID 64-bit factory-programmed ROM ID —
Data Retention 40 years (typical) —
封装 6-TDFN (3x3 mm) with Exposed Pad TO-92-3 (through-hole)
安装类型 Surface Mount Through-Hole
工作温度 -40 C to +85 C -40°C to +85°C
MSL 等级 1 (data undisclosed in sources) —
RoHS 状态 Compliant Compliant
Family Code 0x23 (1-Wire) —
Write/Erase Endurance — 200K cycles per page
Unique ROM Registration — 64-bit factory-programmed laser ROM
Write/Erase Time (typical) — 2 µs (page write cycle)
引脚数量 — 3
On-Chip CRC — CRC-16 generator

数据手册与资源

浏览全部产品 创建 BOM 获取报价