BTS500201TADATMA1 vs BTS500801TEAAUMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BTS500201TADATMA1 بواسطة Infineon و BTS500801TEAAUMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | BTS500201TADATMA1 | BTS500801TEAAUMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | Obsolete | نشط |
| Product Family | HIC-PROFET | Classic PROFET (smart high-side switch) |
| البنية الطوبولوجية | High-Side Power Switch (1:1 N-Channel) | 1:1 N-Channel high-side |
| Output Current (Continuous) | 29 A | — |
| Nominal Supply Voltage | 13.5 V | 12 V |
| Operating Voltage Range | [DATA_NEEDED: full operating voltage range] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) in mΩ] | 10 milliohms (typical) |
| Load Dump Withstand | [DATA_NEEDED: load dump voltage rating] | — |
| Standby Current | [DATA_NEEDED: standby current in uA] | — |
| حد التيار | [DATA_NEEDED: current limit threshold in A] | — |
| Overtemperature Shutdown | [DATA_NEEDED: junction shutdown temperature in °C] | — |
| Diagnostic Output | Open-drain status pin | Current sense (IS pin) |
| Input Pin | Logic-level control (active high) | — |
| العلبة | TO-263-7-10 (PG-TO-263-7-10) | PG-TO252-5-11 (DPAK-5, 4+Tab) |
| نوع التركيب | Surface Mount (Gull-wing) | Surface Mount |
| Automotive Grade | AEC-Q100 Qualified | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: junction/ambient operating range] | [DATA_NEEDED: operating temperature range] |
| حالة RoHS | Compliant | Compliant |
| Load Supply Voltage Range | — | 4.5 V to 28 V |
| Continuous Load Current | — | 10 A |
| تكوين الخرج | — | High-side |
| Number of Channels | — | 1 |
| Fault Protection | — | Current limiting, over-temperature, over-voltage, reverse battery, ground loss, ESD |
| Packaging | — | Tape & Reel |
| Automotive Qualified | — | Yes (AEC-Q100 target application) |
| Power Transistor Technology | — | N-channel vertical power MOSFET with charge pump |