IRFZ34NPBF vs IRF1405PBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRFZ34NPBF بواسطة Infineon و IRF1405PBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRFZ34NPBF | IRF1405PBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET (Stripe Planar cell structure) |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current rating] |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| نطاق درجة حرارة التشغيل | -55 C to +175 C | — |
| Maximum Junction Temperature | 175 C | — |
| العلبة | TO-220AB (3-pin + tab, through-hole) | TO-220AB (through-hole) |
| نوع التركيب | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | JEDEC qualified, optimized for switching below 100 kHz |
| حالة RoHS | Compliant | PbF suffix indicates lead-free / RoHS compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Part Number Suffix | — | PbF (lead-free, RoHS compliant) |
| نوع الترانزستور | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 55 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 169 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 330 W |
| R_DS(on) Maximum | — | 5.3 mOhm @ V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 4.0 V |
| Maximum Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: maximum V_GS rating] |
| Operating Junction Temperature (T_J max) | — | 175 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Single Pulse Avalanche Energy (E_AS) | — | [DATA_NEEDED: avalanche energy rating] |
| Thermal Resistance Junction-to-Case (R_theta_JC) | — | [DATA_NEEDED: thermal resistance R_theta_JC] |