ISZ056N03LF2SATMA1 vs BSZ0501NSIATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ ISZ056N03LF2SATMA1 بواسطة Infineon و BSZ0501NSIATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | ISZ056N03LF2SATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | — |
| نوع الترانزستور | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 16 A | — |
| Continuous Drain Current (ID) at Tc | 72 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| نطاق درجة حرارة التشغيل | -55 C to +175 C | [DATA_NEEDED: Tj max] |
| العلبة | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| نوع التركيب | Surface Mount | Surface Mount |
| حالة RoHS | Compliant | Compliant |
| Part Number | — | BSZ0501NSIATMA1 |
| Product Family | — | OptiMOS 5 (25V/30V) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| مستوى MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |