K9MDG08U5M vs K9UMGB8U7M مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9MDG08U5M بواسطة Samsung Electronics و K9UMGB8U7M بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | K9MDG08U5M | K9UMGB8U7M |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| نوع الذاكرة | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | [DATA_NEEDED: Memory Density] |
| التنظيم | 16G x 8 bit | [DATA_NEEDED: Memory Organization] |
| Cell Type | MLC (2 bits per cell) | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| الواجهة | Asynchronous x8 multiplexed address/data | — |
| العلبة | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | [DATA_NEEDED: Package Type] |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| نوع التركيب | Surface Mount | [DATA_NEEDED: Mounting Type] |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: Page Size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: Block Size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| حالة RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Family | — | K9U series NAND Flash |
| Data Interface | — | [DATA_NEEDED: Data Interface] |
| جهد التغذية | — | [DATA_NEEDED: Supply Voltage] |
| Read Time | — | [DATA_NEEDED: Read Time] |
| Program Time | — | [DATA_NEEDED: Program Time] |
| Endurance | — | [DATA_NEEDED: Program/Erase Cycles] |