MPX12D vs MPX12DP مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX12D بواسطة NXP Semiconductors و MPX12DP بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPX12D | MPX12DP |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | Obsolete |
| Pressure Type | Differential | Differential |
| Operating Pressure | 1.45 PSI (10 kPa) | — |
| Maximum Overload Pressure | 10.88 PSI (75 kPa) | — |
| Full-Scale Output Voltage | 0 to 55 mV (at 3 V supply) | — |
| جهد التغذية | 3 V typical | — |
| Accuracy | ±5% | — |
| نوع الخرج | Wheatstone Bridge (uncompensated) | Analog Wheatstone bridge (mV) |
| Termination Style | PCB (through-hole) | — |
| العلبة | 4-SIP Module | — |
| Port Size | Female, 0.136 in (3.45 mm) | — |
| Port Style | No Port (base-side pressure inlet) | — |
| Technology | Piezoresistive MEMS silicon shear strain gauge | — |
| Compensation | Uncompensated (external compensation required) | Uncompensated (external required) |
| درجة حرارة التشغيل | 0 °C to +85 °C | -40C to +125C |
| حالة RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| نوع التركيب | Through-Hole | Through Hole |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Sensitivity | — | 5.5 mV/kPa typical |
| Full-Scale Span | — | 35 mV typical (20 mV min / 75 mV max) |
| نطاق جهد الخرج | — | 0 mV to 55 mV at 3 V excitation |
| Excitation Voltage | — | 3 V DC typical |
| Linearity | — | +/-5% of span |
| Pressure Port Style | — | Dual axial tube, 4.93 mm (0.19 in) diameter |
| Package / Mounting | — | 4-SIP through-hole module |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |
| مستوى MSL | — | Not applicable (through-hole) |