MPX5010DP vs MPX5010GP مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX5010DP بواسطة NXP Semiconductors و MPX5010GP بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPX5010DP | MPX5010GP |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | NRND |
| Pressure Type | Differential | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity | 450 mV/kPa (typical) | — |
| نطاق جهد الخرج | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| جهد التغذية | 4.75 V to 5.25 V (5 V typical) | 4.75 V to 5.25 V (typical 5 V) |
| تيار التغذية | [DATA_NEEDED: supply current mA] | [DATA_NEEDED: supply current] |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| درجة حرارة التشغيل | 0 C to +85 C (compensated) | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | Male 0.19" (4.93 mm) tube, single vented port |
| العلبة | 6-SIP Module | 6-SIP module (Unibody) |
| نوع الخرج | Analog, ratiometric | Analog, ratiometric |
| نوع التركيب | Through-hole (SIP) | Through-Hole |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | Piezoresistive MEMS with on-chip ASIC |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Full-Scale Span | — | 4.5 V (typical) |
| Zero Pressure Offset | — | 0.2 V typical at VS = 5 V |
| Accuracy | — | ±1.5% (per datasheet, factory calibrated) |
| Compensated Temperature | — | 0 °C to 85 °C |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |