RTAX2000D-1CQ352B vs RTAX2000D-1CQ352E مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000D-1CQ352B بواسطة Microchip Technology و RTAX2000D-1CQ352E بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352B ✓ نشطMicrochip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000D-1CQ352B | RTAX2000D-1CQ352E |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Family | RTAX-S/SL and RTAX-DSP (RTAX2000D) | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs |
| Technology | Antifuse (nonvolatile), Digital CMOS | Digital CMOS FPGA, antifuse (nonvolatile) |
| Equivalent System Gates | 2,000,000 | 2000000 gates |
| CLBs (Logic Cells) | 19,712 CLBs / 29,568 logic cells (per family organization) | — |
| DSP Mathblocks | Up to 120 (18-bit x 18-bit MAC) | Up to 120 |
| DSP Performance | 125 MHz 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Total Ionizing Dose | 300 krad (Si) functional / 200 krad (Si) with operation | — |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| Speed Grade | -1 | — |
| Temperature Range | Commercial (C) | — |
| العلبة | 352-pin Ceramic Column Grid Array (CQ352) | CQFP352 (352-terminal Ceramic Quad Flat Pack) |
| Configuration | Live at power-up, no external configuration device (antifuse) | — |
| Routing Features | Segmentable clocks, chip-wide highway routing, carry logic | — |
| Embedded SRAM Features | Built-in FIFO control logic | — |
| نوع التركيب | Surface Mount (ceramic column grid array) | — |
| Application Domain | Space-flight, radiation-tolerant | — |
| Logic Organization | — | 19712 CLBs |
| نطاق درجة حرارة التشغيل | — | -55C to +125C |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Rated) | — | 200 krad |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programmability | — | One-time programmable (antifuse) |
| جهد التغذية | — | [DATA_NEEDED: core/supply voltage] |
| User I/O Terminals | — | [DATA_NEEDED: user I/O count for CQ352] |
| Max System Frequency | — | [DATA_NEEDED: max system frequency] |
| Radiation Environment Target | — | Space-based applications |
| Commercial Prototype Equivalent | — | Axcelerator family device |