RTAX2000DL-CQ352E vs RTAX2000DL-1CQ352B مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000DL-CQ352E بواسطة Microchip Technology و RTAX2000DL-1CQ352B بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000DL-CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX2000DL-CQ352E ✓ نشطMicrochip Technology
RTAX2000DL-1CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000DL-1CQ352B ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000DL-CQ352E | RTAX2000DL-1CQ352B |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| System Gates | 2,000,000 | — |
| Configurable Logic Blocks (CLBs) | 19,712 | 19712 |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | — |
| Programmable Type | Antifuse (one-time programmable), live at power-up | — |
| العلبة | CQFP-352 (Ceramic Quad Flat Pack) | CQFP-352 (ceramic quad flat pack) |
| Package Dimensions | 48 mm x 48 mm | — |
| Terminal Pitch | 0.50 mm | — |
| Number of Terminals | 352 | — |
| User Input Terminals | 166 | — |
| User Output Terminals | 166 | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | 540 kbits (with optional EDAC protection) |
| Clock Features | Segmentable clocks, chip-wide highway routing | — |
| Technology | Digital CMOS | CMOS, antifuse (OTP, nonvolatile) |
| Speed Grade | D (standard) | — |
| Application Domain | Space-flight systems (radiation tolerant) | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | — |
| جهد التغذية | [DATA_NEEDED: core supply voltage] | — |
| نوع التركيب | Surface Mount | Surface Mount |
| Equivalent System Gates | — | 2000000 |
| Logic Cells | — | 29568 |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Maximum Combinatorial Delay | — | 0.930 ns |
| DSP Mathblocks (max) | — | 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| Terminal Count | — | 352 |
| Input / Output Terminals | — | 166 input, 166 output |
| Radiation Tolerance Class | — | Radiation-tolerant (space-flight) |
| Configuration | — | Live at power-up (antifuse, single chip) |