RTAX2000S-1LG624V vs RTAX2000S-1CG624PROTO مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000S-1LG624V بواسطة Microchip Technology و RTAX2000S-1CG624PROTO بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ نشطMicrochip Technology
RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG624PROTO ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000S-1LG624V | RTAX2000S-1CG624PROTO |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Equivalent System Gates | 2,000,000 gates | 2000000 |
| Configurable Logic Blocks (CLBs) | 21,504 | 21504 |
| User I/Os (maximum, family) | Up to 684 | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC protection | 540 kbits (family max, with optional EDAC) |
| Total Ionizing Dose (TID), functional | 300 krad (Si) | — |
| Total Ionizing Dose (TID), parametric | 200 krad (Si) | — |
| SEU Immunity | Less than 1E-10 errors per bit-day | — |
| Programming Technology | One-time programmable antifuse, nonvolatile | — |
| Configuration | Single-chip, live at power-up (no boot device required) | Live at power-up (nonvolatile antifuse) |
| Process Technology | Digital CMOS | — |
| Speed Grade | -1 | -1 |
| العلبة | CG624, 624-pin ceramic column grid array | CCGA-624 (CG624 ceramic column grid array) |
| Package Temperature Suffix | V (space/military screening variant) | — |
| Family Lineage | RTAX-S/SL, based on commercial Axcelerator family | — |
| نوع التركيب | Surface Mount | Surface Mount |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | — |
| Core Supply Voltage | [DATA_NEEDED: core supply voltage] | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Logic Cells | — | 32256 |
| User I/Os (family max) | — | 684 |
| Total Ionizing Dose (functional) | — | 300 krad (Si) |
| Total Ionizing Dose (parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Maximum System Frequency | — | 350 MHz (family performance) |
| Technology | — | CMOS antifuse (one-time programmable) |
| Qualification Flow | — | PROTO (engineering prototype) |
| Family | — | RTAX-S/SL Radiation-Tolerant FPGA |
| درجة حرارة التشغيل | — | [DATA_NEEDED: operating temperature range] |