RTAX2000SL-LG624V vs RTAX2000S-LG624V مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000SL-LG624V بواسطة Microchip Technology و RTAX2000S-LG624V بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000SL-LG624V - 2M-Gate Rad-Tolerant FPGA 624-CLGA | Microchip
RTAX2000SL-LG624V ✓ نشطMicrochip Technology
RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-LG624V ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000SL-LG624V | RTAX2000S-LG624V |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Family | RTAX-SL (RTAX-S/SL RadTolerant FPGAs) | RTAX-S/SL Radiation-Tolerant FPGAs |
| Equivalent System Gates | 2,000,000 (approx.) | 2,000,000 gates |
| Logic Cells | 32,256 | 32,256 |
| Configurable Logic Blocks (CLBs) | 21,504 | 21,504 |
| Maximum System Frequency | 649 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V (nominal) | — |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| العلبة | 624-pin CLGA (LG624) | CG624 ceramic column grid array (LG624) |
| نوع التركيب | Surface Mount | — |
| درجة حرارة التشغيل | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | up to 540 kbits SRAM |
| Special Routing Features | Segmentable clocks, chip-wide highway routing | — |
| Power-Up Behavior | Live at power-up (no external configuration device) | Live at power-up |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| I/O Count | [DATA_NEEDED: user I/O count] | — |
| Memory Protection | — | optional EDAC protection |
| User I/Os | — | up to 684 |
| Program Technology | — | Nonvolatile antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad |
| Total Ionizing Dose (Parametric) | — | 200 krad |
| SEU Rate | — | < 1E-10 errors per bit-day |
| Base Commercial Family | — | Axcelerator |
| Primary Application Domain | — | Space-flight systems |
| جهد التغذية | — | [DATA_NEEDED: core and I/O supply voltage] |