RTAX4000SL-1LG1272PROTO vs RTAX4000SL-1LG1272E مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX4000SL-1LG1272PROTO بواسطة Microchip Technology و RTAX4000SL-1LG1272E بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX4000SL-1LG1272PROTO - 4M-Gate Rad-Tolerant FPGA | Microchip
RTAX4000SL-1LG1272PROTO ✓ نشطMicrochip Technology
RTAX4000SL-1LG1272E - 4M-Gate Rad-Tolerant FPGA | Microchip
RTAX4000SL-1LG1272E ✓ نشطمقارنة المواصفات
| المعامل | RTAX4000SL-1LG1272PROTO | RTAX4000SL-1LG1272E |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-SL (Radiation-Tolerant FPGA) |
| Logic Blocks (CLBs) | 40,320 | — |
| Equivalent System Gates | 4,000,000 | 4,000,000 |
| Logic Cells | 60,480 | — |
| Technology | CMOS, antifuse (one-time programmable) | — |
| العلبة | 1272-terminal column grid array (LG1272) | 1272-Pin LGA |
| Terminal Pitch | 1.000 mm | — |
| Speed Grade | -1 (SL) | — |
| Qualification Flow | PROTO (prototype flow) | — |
| Configuration | Live at power-up, no external configuration device | True single-chip, no external config PROM |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | [DATA_NEEDED: Embedded SRAM capacity] |
| Clocking | Segmentable chip-wide clocks | — |
| Application Domain | Space-flight systems | — |
| جهد التغذية | [DATA_NEEDED: core supply voltage] | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Number of User I/O | [DATA_NEEDED: user I/O count] | — |
| Total Dissipation | [DATA_NEEDED: typical power dissipation] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| نوع التركيب | Surface Mount | Surface Mount |
| CLB Count | — | 40,320 |
| Logic Cell Count | — | 60,480 |
| Process Technology | — | 0.15 um CMOS |
| Core Supply Voltage | — | 1.5 V |
| Maximum Combinatorial Delay | — | 0.99 ns per CLB |
| Programmability | — | One-Time Programmable (antifuse) |
| Live at Power-Up | — | Yes |
| Radiation Tolerance | — | Radiation-tolerant (space-flight grade) |
| Max I/O Count | — | [DATA_NEEDED: Maximum user I/O count] |