SI1553DL-T1-GE3 vs SI1553DL-T1-E3 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ SI1553DL-T1-GE3 بواسطة Vishay Intertechnology و SI1553DL-T1-E3 بواسطة Vishay Intertechnology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Vishay Intertechnology
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
SI1553DL-T1-GE3 ✓ نشطVishay Intertechnology
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
SI1553DL-T1-E3 ✓ نشطمقارنة المواصفات
| المعامل | SI1553DL-T1-GE3 | SI1553DL-T1-E3 |
|---|---|---|
| العلامة التجارية | Vishay Intertechnology | Vishay Intertechnology |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Vishay Siliconix | Vishay Siliconix |
| Part Number | SI1553DL-T1-GE3 | — |
| Transistor Polarity | Complementary N and P Channel | — |
| Number of Channels | 2 (1 N-channel + 1 P-channel) | — |
| Drain-Source Voltage VDS (max) | 20 V | — |
| Continuous Drain Current ID - N-Channel | 700 mA | — |
| Continuous Drain Current ID - P-Channel | 500 mA | — |
| On-Resistance RDS(on) - N-Channel | 0.32 ohm (typ at VGS = 4.5 V) | — |
| On-Resistance RDS(on) - P-Channel | [DATA_NEEDED: P-channel RDS(on) value] | — |
| Gate-Source Threshold VGS(th) | 2.5 V (max) | — |
| Gate-Source Voltage VGS (max) | [DATA_NEEDED: +/- VGS absolute maximum] | — |
| Power Dissipation PD | 340 mW | — |
| نطاق درجة حرارة التشغيل | -55C to +150C (TJ) | -55 °C to +150 °C |
| العلبة | SC-70-6 / SOT-363-6 | SC-70-6 (SOT-363 / SC-88) |
| نوع التركيب | Surface Mount | Surface Mount |
| Process Technology | TrenchFET | — |
| Termination Finish | Lead-free (Pb-free), Halogen-free | — |
| RoHS Compliance | Compliant per Directive 2002/95/EC | — |
| خالٍ من الهالوجين | Yes (per IEC 61249-2-21) | — |
| مستوى MSL | [DATA_NEEDED: MSL rating] | — |
| Configuration | — | N-Channel + P-Channel (Complementary Pair) |
| Drain-Source Voltage (VDS) | — | 20 V |
| Gate-Source Voltage (VGS) | — | ±8 V |
| Continuous Drain Current N-Ch (ID) | — | 660 mA |
| Continuous Drain Current P-Ch (ID) | — | 410 mA |
| On-Resistance N-Ch (RDS(on)) | — | 5 Ω typical @ VGS = 2.5 V |
| On-Resistance P-Ch (RDS(on)) | — | [DATA_NEEDED: RDS(on) P-channel] |
| Gate Threshold Voltage (VGS(th)) | — | 0.9 V typical |
| Total Power Dissipation | — | 270 mW |
| Technology | — | TrenchFET |
| Halogen-Free Option | — | Yes (per IEC 61249-2-21) |
| حالة RoHS | — | Compliant (RoHS Directive 2002/95/EC) |
| Lead (Pb) Content | — | Lead-free (E3 suffix) |