MD7IC2250NR1 - 5.3W W-CDMA RF LDMOS PA, 2.1-2.2 GHz | NXP
MPN: MD7IC2250NR1 ✓ نشطMD7IC2250NR1 نظرة عامة
An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a single-package transistor module that combines a high-power LDMOS die with internal matching and, in some variants, bias networks. Within the broader RF power taxonomy, the MD7IC2250NR1 sits at the following levels: RF power amplifier -> RF amplifier IC -> RF & wireless -> semiconductor. It is built for infrastructure rather than handset use, where the goal is to drive 5-10 W average from a 28 V supply with linearlity suitable for spectrally efficient 3G/4G modulation formats. The integrated matching network makes the part especially attractive to designers transitioning from discrete LDMOS transistors to higher-level assemblies.
Key electrical features include 31 dB small-signal gain, on-chip input and output matching covering 2000-2200 MHz, integrated ESD protection, and high ruggedness for VSWR tolerance at the antenna port. The package is a thermally enhanced TO-270W-14 (also called TO-270 WB-14 GULL) with flat gull-wing leads optimized for reflow soldering and a copper flange that provides a low-resistance path to the system heatsink.
Typical applications include W-CDMA / UMTS base-station power amplifiers, 2.1 GHz LTE small-cell driver stages, repeater and indoor-distribution amplifier final stages, and general-purpose 2 GHz industrial/scientific RF power blocks where integrated matching reduces design risk.
Design considerations include providing adequate copper area on the PCB beneath the package flange, holding lead length below 1 mm to preserve the integrated match, and adding a small RC network on the gate bias line to suppress low-frequency oscillations in LDMOS PAs.
This page synthesizes distributor pricing, parametrically similar drop-in variants from the NXP HV7IC family, and practical RF PA design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ MD7IC2250NR1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع MD7IC2250NR1 (نفس عامل الشكل والبصمة) — يختلف في Mounting Type, Package / Case, Description, Frequency Range, Manufacturer.
MD7IC2250GNR1
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
MD7IC2250NBR1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MD7IC2250NR1 الحدود القصوى والخصائص الكهربائية
| Technology | RF LDMOS (HV7IC) |
| Frequency Range | 2.0 GHz to 2.2 GHz |
| Operating Frequency (W-CDMA spec) | 2110 MHz to 2170 MHz |
| Supply Voltage (Vdd) | 28 V typ, 32 V max |
| Average Output Power (W-CDMA) | 5.3 W |
| Power Gain | 31 dB |
| العلبة / الحالة | TO-270-14 Variant, Flat Leads (TO-270 WB-14 GULL) |
| عدد الأطراف | 15 (14 functional + flange) |
| نوع التركيب | Surface Mount (gull-wing leads + flange) |
| مستوى MSL | 3 |
| Input Matching | Internal (on-chip) |
| Output Matching | Internal (on-chip) |
| Operating Mode | Class AB (W-CDMA linear) |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
تكوين أطراف MD7IC2250NR1
| دبوس 1 | RFin — RF input (internally matched) |
| دبوس 2 | GND — Ground / flange (thermal pad) |
| دبوس 3 | Vgs — Gate bias (Class AB quiescent set) |
| دبوس 4 | NC — Not connected (per datasheet) |
| دبوس 5 | GND — Ground |
| دبوس 6 | Vdd — Drain supply (28 V typ, 32 V max) |
| دبوس 7 | GND — Ground |
| دبوس 8 | NC — Not connected (per datasheet) |
| دبوس 9 | GND — Ground |
| دبوس 10 | Vdd — Drain supply |
| دبوس 11 | GND — Ground |
| دبوس 12 | RFout — RF output (internally matched) |
| دبوس 13 | NC — Not connected (per datasheet) |
| دبوس 14 | GND — Ground |
| دبوس 15 | FLANGE — Mounting flange (ground + thermal) |
منطقة التشغيل الآمن (DC, estimated from datasheet Vdd max and CW ratings)
التطبيقات النموذجية
MD7IC2250NR1 مناسب لـ 6 التطبيقs: W-CDMA / UMTS Base-Station Power Amplifier, LTE Band 1 Small-Cell Driver, 2 GHz Indoor RF Repeater / DAS Final Stage, Industrial / Scientific 2 GHz RF Power Block, RF Front-End Module Driver Stage, Public-Safety / Private LTE Band 1 Power Amplifier.
W-CDMA / UMTS Base-Station Power Amplifier
The MD7IC2250NR1 delivers 5.3 W average W-CDMA output at 31 dB gain across 2110-2170 MHz, making it a strong fit for UMTS Band I micro/pico base-station final PA stages. Its on-chip input/output matching eliminates external baluns, cutting PCB area versus discrete LDMOS PAs by roughly half and removing the largest unit-to-unit gain variation source. Placed between the 28 V drain rail and the antenna duplexer with 33 pF drain bypass and a small RC network on the gate line, the part meets 3GPP ACLR with margin while dissipating ~10 W of heat through the copper flange. Trade-off vs higher-power discrete LDMOS: smaller footprint and faster design turn, but a 5 W power ceiling.
موصى به
LTE Band 1 Small-Cell Driver
In LTE Band 1 (2110-2170 MHz) small-cell and femtocell designs the MD7IC2250NR1 provides a compact linear PA block around 5 W average, well matched to the output needs of indoor small-cell radios where average power rather than peak power drives the BOM. The 31 dB gain allows a low-power transceiver IC to drive the MD7IC2250NR1 directly with no intermediate driver stage, simplifying the RF chain. Compared to GaN PAs at this power level, the LDMOS part offers lower quiescent current draw and easier 28 V biasing. The integrated match keeps the small-cell PCB below 4 sq cm total RF area, a key constraint for indoor mounting enclosures.
موصى به
2 GHz Indoor RF Repeater / DAS Final Stage
Distributed antenna systems (DAS) and indoor RF repeaters operating in the UMTS / LTE Band 1 downlink use the MD7IC2250NR1 as a linear final PA, where its integrated matching minimizes the BOM count and its 28 V supply aligns with standard telecom -48 V rectified-and-stepped rails. Repeater designers value the part's high VSWR ruggedness at the antenna port, since indoor antenna networks often present mismatched loads. With proper PCB thermal design (at least 1 sq inch of 2 oz copper under the flange), the part handles continuous 5.3 W W-CDMA without heatsink mounting hardware, easing mechanical integration into slim repeater housings.
موصى به
Industrial / Scientific 2 GHz RF Power Block
For 2 GHz industrial, scientific and medical (ISM-adjacent) RF power applications such as plasma generators, RF lighting drivers and scientific instrumentation, the MD7IC2250NR1's 5 W average and 31 dB gain offer a turn-key 28 V power block with internal matching covering 2.0-2.2 MHz. Industrial designers benefit from the part's high ruggedness and the simplified biasing: a single positive gate bias and a 28 V drain rail. Compared to discrete LDMOS transistors, the integrated approach reduces EMI risk by minimizing bond-wire parasitics and external matching loop areas. Trade-off: the on-chip match constrains the operating band to ~200 MHz around 2.1 GHz.
موصى به
RF Front-End Module Driver Stage
The MD7IC2250NR1 is well-suited as a driver PA in cascaded RF front-end modules where a 5 W stage feeds a higher-power final PA or filter network. The 31 dB gain lets a small-signal transceiver or upconverter drive the MD7IC2250NR1 directly without an intermediate pre-driver, reducing chain complexity. Its 28 V supply and SMD TO-270W-14 package simplify integration into front-end PCBs that already carry other 28 V LDMOS parts. Designers should still budget a 10 dB attenuator pad at the input to flatten the high gain and improve stage-to-stage isolation.
موصى به
Public-Safety / Private LTE Band 1 Power Amplifier
Private LTE networks and public-safety broadband systems operating in the 2.1 GHz band use the MD7IC2250NR1 as a compact, linear PA delivering ~5 W average to fixed or vehicle-mounted subscriber units. The integrated matching cuts design cycle time for custom-form-factor public-safety radios, where PCB area and thermal management are tightly constrained. The part's 28 V rail aligns with typical PoE-derived telecom supplies in fixed-installation equipment. Compared to GaN options at 5 W, the LDMOS MD7IC2250NR1 offers lower quiescent current and easier biasing, at the cost of slightly lower peak-power handling.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ MD7IC2250NR1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | MD7IC2250GNR1 | MD7IC2250NBR1 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270W-14 (GULL) | TO-270W-14 (GULL) | TO-270W-14 (GULL) |
| Operating Frequency | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Average Output Power (W-CDMA) | 5.3 W | 5.3 W | 5.3 W |
| Power Gain | 31 dB | 31 dB | 31 dB |
| Drain Supply (Vdd) | 28 V typ / 32 V max | 28 V typ / 32 V max | 28 V typ / 32 V max |
| Internal Matching | Yes (input + output) | Yes (input + output) | Yes (input + output) |
| Tape-and-Reel Code | R1 (standard) | G (alternate orientation) | B (alternate orientation) |
أبرز الفروقات
- Integrated on-chip input/output matching in TO-270W-14 (مقابلMW7IC2750NR1 (same package but tuned for 2.6-2.7 GHz))
- Same-package drop-in variants for second sourcing (مقابلMD7IC2250GNR1 / MD7IC2250NBR1)
- Mature 7th-generation LDMOS process (مقابلNewer GaN PAs in the same 5 W class)
ملاحظات التصميم
At 5.3 W average W-CDMA output and ~28% power-added efficiency, the MD7IC2250NR1 dissipates roughly 10 W as heat through the copper flange. Solder the flange to at least 1 sq inch of 2 oz copper pour, or mount it to a small aluminum spreader, to keep the junction below the 150 C Tj(max) rating. Without adequate thermal sinking the part will enter thermal foldback and the W-CDMA ACLR margin will collapse.
Hold lead length below 1 mm after PCB assembly to preserve the on-chip input/output matching; longer leads add parasitic inductance that detunes the integrated match and reduces gain at band edges. Use a single continuous ground plane on the top layer under the package, with vias stitching the flange to the inner ground plane every 3 mm. Drain bias traces should be at least 0.5 mm wide per ampere to limit voltage drop at the 28 V rail.
Place a 33-100 pF drain bypass capacitor directly at the Vdd pins with a 10 nF broadband ceramic in parallel, and add an RC network (typically 10 ohm + 1 nF) on the gate bias line close to the package to suppress low-frequency oscillations that LDMOS PAs can exhibit when the gate impedance is high. Keep the gate-bias trace routed away from the RF input/output traces to avoid positive feedback. A 50 ohm microstrip or stripline from the RF pins to the SMA connectors preserves the matched return loss.
Do not exceed the 32 V maximum Vdd; transient over-voltage from a poorly regulated drain supply can permanently damage the LDMOS die. Do not operate the part into an open or shorted antenna port - although the device is rugged, sustained high-VSWR conditions accelerate thermal cycling failures. Always sequence gate bias on before drain bias, and drain bias off before gate bias, to avoid hot-switching damage to the die.
At 31 dB small-signal gain, the MD7IC2250NR1 will oscillate if the input and output traces are not well isolated. Place at least 5 mm of ground plane between RF input and RF output traces, and add a 5-10 dB pi-attenuator pad at the input to flatten gain and improve stage-to-stage isolation. If spurious emissions appear at integer multiples of the operating frequency, the gate-bias RC network is the first place to investigate.
معلومات الامتثال
RoHS compliant per NXP product page. Not AEC-Q100 qualified - this is a base-station / infrastructure RF power part, not an automotive-grade component. Lead-free (Pb-free) reflow-compatible.
