Quick Answers: What is the H5TC4G63AFR-PBA and What Are Its Key Verified Specs?
The H5TC4G63AFR-PBA is a 4Gb DDR3L SDRAM from SK hynix, organized as 256M x 16. It operates at a low 1.35V supply, supports data rates up to 1866 Mbps (PC3L-14900), and comes in a 96-ball FBGA package with 0.8mm ball pitch. As of 2026-08-21, it is in active lifecycle status with 99,999 units in stock at XAIPART, priced at $3.9773 per unit at 1000+ quantity. Its low voltage reduces power consumption by approximately 15% compared to standard DDR3 (1.5V), making it ideal for laptops, embedded systems, networking, industrial PCs, set-top boxes, and automotive infotainment.
Technical Guide: How to Select, Design In, and Use the H5TC4G63AFR-PBA
Selecting the Right DDR3L Memory
When selecting the H5TC4G63AFR-PBA, verify that your system requires DDR3L (1.35V) rather than standard DDR3 (1.5V). The 1.35V operation provides approximately 15% power savings, critical for battery-powered or thermally constrained designs. Confirm the density (4Gb) and organization (256M x 16) match your memory map and bus width. The 16-bit I/O interface suits processors with a 16-bit memory bus; for 32-bit or 64-bit buses, use multiple devices in parallel.
Key Specifications for Design
- Supply Voltage (VDD/VDDQ): 1.35V ± [DATA_NEEDED: tolerance]
- Data Rate: 1866 Mbps (PC3L-14900)
- Package: 96-ball FBGA, 0.8mm ball pitch
- Banks: 8 internal banks
- Burst Length: 8 and 4 (with burst chop)
- CAS Latency (CL): 11, 12, 13
- Operating Temperature: 0°C to +95°C (Tcase)
- On-Die Termination (ODT): Yes
- ZQ Calibration: Yes
- Write Leveling: Yes
- Auto Self-Refresh: Yes
- Partial Array Self-Refresh: Yes
Designing with the H5TC4G63AFR-PBA
Follow these steps to integrate the H5TC4G63AFR-PBA into your design:
- Power Supply: Provide a clean 1.35V supply for VDD and VDDQ. Use low-ESR decoupling capacitors (e.g., 0.1µF and 1µF) near each power pin to minimize noise. [VERIFY_NEEDED: recommended capacitor values from datasheet]
- Reference Voltage (VREF): Generate VREF accurately, typically at 0.675V (half of VDDQ). Use a resistor divider with a buffer or a dedicated VREF generator. [VERIFY_NEEDED: VREF tolerance from datasheet]
- Signal Integrity: At 1866 Mbps, maintain controlled impedance for data, address, and control lines. Follow the layout guidelines in the datasheet, including trace length matching and proper termination. ODT helps reduce reflections; configure it via the mode register.
- ZQ Calibration: Connect a 240Ω resistor to the ZQ pin for calibration. Perform ZQ calibration during initialization to optimize drive strength and ODT.
- Write Leveling: For systems with multiple memory devices, use write leveling to align DQS with the clock. This is essential for reliable operation at high data rates.
- Self-Refresh: Use auto self-refresh for standard power-down, and partial array self-refresh to save power in battery-operated devices by refreshing only the required memory banks.
- Thermal Management: The operating temperature range is 0°C to +95°C (Tcase). Ensure adequate airflow or heat sinking to keep the case temperature within limits.
Programming and Configuration
Configure the device via the mode register (MR) to set CAS latency, burst length, and other parameters. The H5TC4G63AFR-PBA supports CL of 11, 12, and 13, corresponding to different tRCD and tRP values. [DATA_NEEDED: tRCD and tRP values for each CL] Use the datasheet's timing parameters to program the memory controller correctly.
Layout Best Practices
- Place the device close to the memory controller to minimize trace length.
- Use a solid ground plane and split power planes for VDD and VDDQ.
- Route DQ and DQS as differential pairs with proper spacing.
- Add series termination resistors for address/control lines if needed.
Alternatives & Comparison: Drop-in Replacements for H5TC4G63AFR-PBA
Based on verified data, the H5TC4G63AFR-PBR is a direct drop-in replacement from SK hynix, sharing the same 96-ball FBGA package and 256M x 16 organization. Other functionally equivalent options include the H5TC4G63CFR-PBA and Micron's MT41K256M16HA-125, but verify pin compatibility and timing parameters before substitution. The table below compares the H5TC4G63AFR-PBA with these alternatives using only verified data from the XAIPART database.
| Parameter | H5TC4G63AFR-PBA | H5TC4G63AFR-PBR | H5TC4G63CFR-PBA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Manufacturer | SK hynix | SK hynix | SK hynix | Micron |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | [DATA_NEEDED: data rate] | [DATA_NEEDED: data rate] | [DATA_NEEDED: data rate] |
| Package | 96-ball FBGA | 96-ball FBGA | [DATA_NEEDED: package] | 96-ball FBGA |
| Ball Pitch | 0.8mm | 0.8mm | [DATA_NEEDED: ball pitch] | [DATA_NEEDED: ball pitch] |
| Banks | 8 | 8 | [DATA_NEEDED: banks] | [DATA_NEEDED: banks] |
| CAS Latency | 11, 12, 13 | [DATA_NEEDED: CL] | [DATA_NEEDED: CL] | [DATA_NEEDED: CL] |
| Operating Temp | 0°C to +95°C | [DATA_NEEDED: temp range] | [DATA_NEEDED: temp range] | [DATA_NEEDED: temp range] |
| ODT | Yes | [DATA_NEEDED: ODT] | [DATA_NEEDED: ODT] | [DATA_NEEDED: ODT] |
| ZQ Calibration | Yes | [DATA_NEEDED: ZQ] | [DATA_NEEDED: ZQ] | [DATA_NEEDED: ZQ] |
| Write Leveling | Yes | [DATA_NEEDED: WL] | [DATA_NEEDED: WL] | [DATA_NEEDED: WL] |
| RoHS | Compliant | [DATA_NEEDED: RoHS] | [DATA_NEEDED: RoHS] | [DATA_NEEDED: RoHS] |
Summary: The H5TC4G63AFR-PBR is the closest drop-in replacement with identical package and organization. The H5TC4G63CFR-PBA and Micron MT41K256M16HA-125 are functionally equivalent but require verification of pin compatibility and timing parameters. Always consult the datasheets before substitution.
Industry Insight: Market Position, Lifecycle, and Supply Situation
The H5TC4G63AFR-PBA is in active lifecycle status, indicating it is still in production and widely available. As of 2026-08-21, XAIPART lists 99,999 units in stock, with a MOQ of 1. This suggests healthy supply and availability for both prototyping and production runs. The base price is $3.9773 at 1000+ quantity, with tiered pricing from $6.8182 at 1 unit to $3.9773 at 1000 units. The DDR3L market remains relevant for legacy and cost-sensitive applications, though DDR4 and DDR5 are gaining dominance. [DATA_NEEDED: market share data]
Trends & Outlook: What Buyers Should Watch
As DDR3L continues to serve embedded and industrial markets, buyers should monitor the following trends anchored to verified specs:
- Power Efficiency: The 1.35V operation provides ~15% power savings over 1.5V DDR3, making it attractive for battery-powered devices. Expect continued demand in IoT and portable applications.
- Data Rate Demands: With 1866 Mbps capability, the H5TC4G63AFR-PBA meets the needs of mid-range networking and computing. Future designs may require higher speeds, but DDR3L remains sufficient for many applications.
- Supply Stability: Active lifecycle and high stock levels indicate stable supply. However, as fabs shift to newer memory types, availability may tighten. Buyers should consider securing inventory for long-term projects.
- Package Trends: The 96-ball FBGA with 0.8mm pitch is a standard for DDR3L, ensuring broad compatibility. No major package changes are expected.
- Temperature Requirements: The 0°C to +95°C range covers most commercial and industrial environments. For extended temperature, consider alternatives with wider ranges.
Buyers should also watch for potential end-of-life announcements as DDR3L ages, and consider design-in of drop-in replacements like the H5TC4G63AFR-PBR to mitigate supply risks.
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