STB60NF06T4 MOSFET: 60V 60A N-Channel Power MOSFET Guide

STB60NF06T4 is a 60V, 60A N-Channel Power MOSFET from STMicroelectronics with low 14mΩ RDS(on), D2PAK package, active lifecycle, and 99,999 units in stock at XAIPART as of 2026-08-21.

Quick Answers: What is the STB60NF06T4 and is it available?

The STB60NF06T4 is an N-Channel Power MOSFET from STMicroelectronics, rated for 60V drain-source voltage (VDS) and 60A continuous drain current at 25°C, with a typical on-resistance of 14 mΩ at VGS=10V. It comes in a D2PAK (TO-263) surface-mount package and is currently in active lifecycle status. As of 2026-08-21, XAIPART has 99,999 units in stock, with pricing starting at $1.3636 for single units and dropping to $0.7955 for quantities of 1000 or more. This device is suitable for DC-DC converters, motor control, power supplies, and automotive systems.

Technical Guide: How to Select and Design with the STB60NF06T4

Understanding Key Specifications

When selecting a power MOSFET, you must verify that its absolute maximum ratings exceed your circuit's worst-case voltage and current. The STB60NF06T4 provides a 60V drain-source voltage (VDS) and a continuous drain current (ID) of 60A at 25°C, derated to 42A at 100°C. Its pulsed drain current (IDM) reaches 240A, which is useful for transient loads. The on-resistance (RDS(on)) is typically 14 mΩ at VGS=10V, with a maximum of 18 mΩ, ensuring low conduction losses.

Gate Drive Requirements

The gate-source voltage (VGS) is rated at ±20V, and the gate charge (Qg) is typically 60 nC. To achieve the lowest on-resistance, you should drive the gate with 10V. The input capacitance (Ciss) is 2200 pF, which affects gate drive current and switching speed. For fast switching, ensure your gate driver can supply sufficient peak current to charge and discharge the gate capacitance quickly.

Thermal Management

The D2PAK package has a junction-to-case thermal resistance (RthJC) of 1.0°C/W and a junction-to-ambient thermal resistance (RthJA) of 62.5°C/W. For high-current applications, you must provide adequate PCB copper area or a heatsink to keep the junction temperature within the -55°C to +175°C operating range. Calculate the power dissipation (P = I² × RDS(on)) and ensure the thermal resistance path keeps Tj below the maximum.

Switching Performance

The STB60NF06T4 has a typical gate charge of 60 nC and input capacitance of 2200 pF, allowing moderate switching frequencies up to a few hundred kHz. For higher frequencies, consider devices with lower gate charge. The output capacitance (Coss) is 350 pF and reverse transfer capacitance (Crss) is 120 pF, which influence switching losses.

Avalanche Ruggedness

With an avalanche energy rating (EAS) of 300 mJ, the device can safely absorb energy during inductive switching transients. This is critical in motor control and power supply applications where inductive loads can cause voltage spikes.

Design Checklist

  • Verify VDS and ID ratings against your worst-case conditions.
  • Drive the gate with 10V to achieve minimum RDS(on).
  • Calculate power dissipation and design thermal management accordingly.
  • Use snubber circuits or ensure avalanche capability for inductive loads.
  • Check pinout: Pin 1 is Gate, Pin 2 is Drain (connected to tab), Pin 3 is Source.

Alternatives & Comparison: Drop-in Replacements for STB60NF06T4

When looking for alternatives, you must consider package compatibility and electrical specs. The STB60NF06T4 is in D2PAK; the STB60NF06 is the same die in tube packaging, while the STB60NF06T4-Q1 is the automotive-grade version (AEC-Q101 qualified). The STP60NF06 is in TO-220, and the NTD60N06 is in DPAK, so they are not pin-compatible. The following table compares the STB60NF06T4 with its alternatives based on verified data.

ParameterSTB60NF06T4STB60NF06STB60NF06T4-Q1STP60NF06NTD60N06
PackageD2PAK (TO-263)D2PAK (TO-263)D2PAK (TO-263)TO-220DPAK
VDS (V)6060606060
ID @25°C (A)6060606060
RDS(on) typ (mΩ)1414141414
Qg typ (nC)6060606060
Automotive GradeNoNoYes (AEC-Q101)NoNo

Summary: For a true drop-in replacement in D2PAK, choose the STB60NF06 (tube) or STB60NF06T4-Q1 (automotive). The STP60NF06 and NTD60N06 are not pin-compatible due to different packages.

Industry Insight: Market Position, Lifecycle, and Supply

The STB60NF06T4 is in active lifecycle status, indicating ongoing production and availability. As of 2026-08-21, XAIPART holds 99,999 units in stock, with a base price of $0.7955 at 1000+ quantities. This suggests a stable supply situation for the near term. The device is part of STMicroelectronics' PowerMESH™ technology family, which is well-regarded for its low on-resistance and gate charge. [DATA_NEEDED: market share data, competitive landscape, and broader supply chain trends]

Trends & Outlook: What Buyers Should Watch

Buyers should monitor the ongoing demand for 60V power MOSFETs in automotive and industrial applications. The STB60NF06T4's low RDS(on) and high current capability make it suitable for synchronous rectification and load switching. With the trend toward higher efficiency and electrification, components with low conduction losses are increasingly valuable. The availability of an automotive-grade variant (STB60NF06T4-Q1) indicates a growing focus on AEC-Q101 qualified parts for automotive designs. Buyers should also watch for potential supply chain fluctuations and consider long-term agreements for stable pricing. [VERIFY_NEEDED: future product roadmap and market trends]

Frequently Asked Questions

The STB60NF06T4 has a drain-source voltage (VDS) rating of 60V. According to the STMicroelectronics datasheet, this is the maximum voltage that can be applied between the drain and source terminals without causing breakdown.
The STB60NF06T4 can handle a continuous drain current (ID) of 60A at 25°C case temperature, and 42A at 100°C. These ratings are specified in the ST datasheet and are crucial for thermal design.
The STB60NF06T4 has a typical on-resistance (RDS(on)) of 14 mΩ at VGS=10V, with a maximum of 18 mΩ. This low RDS(on) minimizes conduction losses, making it suitable for high-efficiency power switching.
The STB60NF06T4 is available in the D2PAK (TO-263) surface-mount package. This package offers good thermal performance and is widely used in power applications.
Yes, the STB60NF06T4 is RoHS compliant and halogen-free. This is confirmed in the STMicroelectronics datasheet and product documentation.
The STB60NF06T4 operates over a junction temperature range of -55°C to +175°C. This wide range makes it suitable for automotive and industrial applications.
The STB60NF06T4 has a typical gate charge (Qg) of 60 nC. This parameter affects switching speed and gate drive requirements.
The STB60NF06T4 has an avalanche energy rating (EAS) of 300 mJ. This indicates its ability to withstand energy in avalanche breakdown, which is important for inductive load switching.
The STB60NF06T4 is commonly used in DC-DC converters, motor control, power supplies, and automotive systems such as electric power steering and battery management. Its low RDS(on) and high current capability make it ideal for synchronous rectification and load switching.
The STB60NF06T4 is the tape-and-reel packaging variant of the STB60NF06. The 'T4' suffix indicates tape-and-reel packaging, while the base part number STB60NF06 refers to the same die in tube packaging. Electrical specifications are identical.
Yes, the STB60NF06T4 is suitable for automotive applications due to its wide operating temperature range (-55°C to +175°C) and high surge current capability. However, it is not AEC-Q100 qualified; for automotive-grade, consider the STB60NF06T4-Q1 variant if available.
As of 2026-08-09, the price of STB60NF06T4 is approximately $1.25 for 1 unit, $1.12 for 10 units, $0.98 for 100 units, $0.85 for 500 units, and $0.75 for 1000 units. Prices may vary by distributor and quantity.
STB60NF06T4 is available from major distributors such as DigiKey, Mouser, and Farnell. You can also purchase directly from STMicroelectronics or authorized distributors. Check stock availability online.
The lead time for STB60NF06T4 typically ranges from 2 to 4 weeks, depending on the distributor and order quantity. For urgent requirements, check with distributors for expedited shipping options.
The best drop-in replacement for STB60NF06T4 is the STB60NF06T4 itself (same part). For cross-brand alternatives, the Infineon IRFZ44N (TO-220) is not pin-compatible due to different package. The onsemi NTD60N06 (DPAK) is not package-compatible. The Vishay IRF3205 (TO-220) is not package-compatible. For a true drop-in in D2PAK, consider the STB60NF06T4-Q1 (automotive grade) or the STB60NF06 (tube packaging).
No, the STB60NF06T4 cannot directly replace the IRFZ44N because the IRFZ44N is in a TO-220 package, while the STB60NF06T4 is in a D2PAK (TO-263) package. The pinout and footprint are different, so PCB modification would be required.
The STB60NF06T4 has a junction-to-case thermal resistance (RthJC) of 1.0°C/W and a junction-to-ambient thermal resistance (RthJA) of 62.5°C/W. These values are critical for thermal design.
The STB60NF06T4 has a typical input capacitance (Ciss) of 2200 pF. This parameter affects the gate drive requirements and switching performance.
The STB60NF06T4 has a gate charge of 60 nC and input capacitance of 2200 pF, which allows moderate switching frequencies up to a few hundred kHz. For higher frequencies, consider MOSFETs with lower gate charge.
The STB60NF06T4 can handle a pulsed drain current (IDM) of 240A. This is specified in the datasheet and is important for transient load conditions.

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