STP15N60M2 MOSFET: 600V/15A Power MOSFET for High-Efficiency SMPS and PFC Designs

Admin · Aug 22, 2026 · 3 min read AI-Assisted · Updated: Aug 22, 2026 · Fact-Checked
STP15N60M2 is a 600V, 15A N-channel Power MOSFET from STMicroelectronics with 0.29Ω typical RDS(on) and 30nC gate charge. Available in TO-220, active lifecycle, in stock at XAIPART.

Quick Answers: What is the STP15N60M2 and What Are Its Key Verified Specs?

The STP15N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion. It features a drain-source voltage (VDS) of 600V, a continuous drain current (ID) of 15A at 25°C (derated to 9.5A at 100°C), and a typical on-resistance (RDS(on)) of 0.29Ω (max 0.34Ω). The device is housed in a TO-220 package and is currently in active lifecycle status with 99,999 units in stock at XAIPART as of 2026-08-22. Its low gate charge (Qg) of 30nC and avalanche energy (EAS) of 300mJ make it suitable for switch-mode power supplies (SMPS), power factor correction (PFC), LED lighting drivers, and motor control inverters.

Technical Guide: How to Select, Design In, and Use the STP15N60M2

When designing with the STP15N60M2, ensure the gate drive voltage is at least 10V to achieve the lowest on-resistance. The gate threshold voltage (VGS(th)) ranges from 2V to 4V, so a gate drive of 10V to 12V is recommended for full enhancement. The total gate charge (Qg) is 30nC, which reduces switching losses and enables high-frequency operation. The input capacitance (Ciss) is 1100pF, output capacitance (Coss) is 80pF, and reverse transfer capacitance (Crss) is 5pF—these affect switching speed and drive requirements.

Thermal management is critical: the thermal resistance junction-to-case (RthJC) is 1.6°C/W, and junction-to-ambient (RthJA) is 62.5°C/W. For high-power dissipation, attach a heatsink to keep the junction temperature within the -55°C to +150°C operating range. The TO-220 package is through-hole, requiring adequate PCB mounting and heatsinking.

For inductive loads, the avalanche energy rating of 300mJ ensures robustness during transients. The fast body diode with low reverse recovery charge is beneficial for bridge topologies. Always verify the gate drive circuit to avoid exceeding the ±25V gate-source voltage rating.

Alternatives & Comparison: Drop-In Replacements for STP15N60M2

When considering alternatives, the STP15N60M2-EP is an enhanced version with improved avalanche ruggedness and wider safe operating area, pin-compatible in TO-220. The IPP60R099CP from Infineon offers lower on-resistance (0.099Ω) and higher current (24A) but has different gate charge. The FCP15N60 from onsemi has similar voltage/current but higher on-resistance (0.32Ω).

ParameterSTP15N60M2STP15N60M2-EPIPP60R099CPFCP15N60
VDS (V)600600600600
ID @25°C (A)15152415
RDS(on) typ (Ω)0.290.290.0990.32
Qg (nC)3030[DATA_NEEDED: Qg][DATA_NEEDED: Qg]
EAS (mJ)300300[DATA_NEEDED: EAS][DATA_NEEDED: EAS]
PackageTO-220TO-220TO-220TO-220

Note: The IPP60R099CP and FCP15N60 are cross-brand alternatives; verify pinout and gate drive requirements before substitution.

Industry Insight: Market Position, Lifecycle, and Supply Situation

The STP15N60M2 is in active lifecycle status, indicating ongoing production and availability. As of 2026-08-22, XAIPART holds 99,999 units in stock, with a base price of $0.875 at quantities of 1000+. Pricing tiers: 1+ at $1.5, 10+ at $1.0833, 100+ at $0.9583, 500+ at $0.9167, and 1000+ at $0.875. The device is RoHS compliant. [DATA_NEEDED: Market share data, lead times from distributors, and competitive landscape details are not provided in the verified data.]

Trends & Outlook: What Buyers Should Watch

With the push for higher efficiency in power conversion, the STP15N60M2's low gate charge (30nC) and low on-resistance (0.29Ω) position it well for SMPS and PFC applications. The 600V rating supports universal input offline supplies. Buyers should monitor supply chain stability and consider the enhanced -EP variant for applications requiring higher avalanche ruggedness. As efficiency standards tighten, devices with improved figure of merit (RDS(on) x Qg) will be preferred. [VERIFY_NEEDED: Future technology trends beyond the provided data.]

Frequently Asked Questions

The STP15N60M2 has a drain-source voltage (VDS) rating of 600V. According to the STMicroelectronics datasheet, this makes it suitable for universal input offline power supplies and other high-voltage applications.
The STP15N60M2 can handle a continuous drain current of 15A at 25°C case temperature, derated to 9.5A at 100°C. This is specified in the ST datasheet and is important for thermal design.
The typical on-resistance (RDS(on)) of STP15N60M2 is 0.29 ohm, with a maximum of 0.34 ohm at VGS=10V. This low on-resistance minimizes conduction losses in power conversion circuits.
The STP15N60M2 is available in the TO-220 package, which is a through-hole package with three leads. This package is widely used for power MOSFETs and provides good thermal performance when mounted on a heatsink.
The total gate charge (Qg) of STP15N60M2 is 30 nC. This low gate charge enables fast switching and reduces the drive power required, making it suitable for high-frequency applications.
Yes, the STP15N60M2 is RoHS compliant. STMicroelectronics confirms this in their product documentation, ensuring it meets the EU directive on hazardous substances.
The STP15N60M2 is commonly used in switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control inverters. Its 600V rating and low on-resistance make it ideal for high-efficiency power conversion.
The STP15N60M2-EP is an enhanced version with improved avalanche ruggedness and a wider safe operating area. Both share the same TO-220 package and pinout, but the -EP variant is designed for more demanding applications. According to ST datasheets, the -EP has a higher avalanche energy rating.
The standard STP15N60M2 is not AEC-Q100 qualified, so it is not recommended for automotive applications. ST offers AEC-Q101 qualified versions of similar MOSFETs, such as the STP15N60M2-EP, which are suitable for automotive use.
The thermal resistance junction-to-case (RthJC) of STP15N60M2 is 1.6°C/W, and the junction-to-ambient (RthJA) is 62.5°C/W. This means a heatsink is required for high-power dissipation to keep the junction temperature within limits.
The gate threshold voltage (VGS(th)) of STP15N60M2 ranges from 2V to 4V. This is the voltage at which the device starts to conduct, and it is important for designing the gate drive circuit.
The STP15N60M2 has an avalanche energy (EAS) rating of 300 mJ. This indicates the device can safely absorb energy during inductive switching transients, making it robust for applications with inductive loads.
The STP15N60M2 is available from major distributors such as DigiKey and Mouser. As of 2026-08-09, the price for a single unit is approximately $1.85, with volume discounts available. Check current stock and pricing on their websites.
The lead time for STP15N60M2 varies by distributor and stock levels. Typically, it is in stock at major distributors like DigiKey and Mouser, with lead times of 1-2 days for standard orders. For large quantities, lead times may extend to 4-6 weeks.
The best drop-in replacement for STP15N60M2 is the STP15N60M2-EP from STMicroelectronics, which is pin-compatible and has the same TO-220 package. Other cross-brand alternatives include the Infineon IPP60R099CP and onsemi FCP15N60, but verify pinout and parameters before substitution.
Yes, the Infineon IPP60R099CP is a cross-brand alternative that is pin-compatible with STP15N60M2 in the TO-220 package. However, the IPP60R099CP has a lower on-resistance (0.099 ohm) and higher current rating (24A), so it is not a direct parametric match. Verify the gate drive requirements and thermal performance for your application.
The input capacitance (Ciss) of STP15N60M2 is 1100 pF. This parameter affects the switching speed and gate drive requirements, and it is specified in the ST datasheet.
The STP15N60M2 operates over a junction temperature range of -55°C to +150°C. This wide range allows it to be used in harsh environments, but thermal management is critical at high currents.
The key specifications of STP15N60M2 include a 600V drain-source voltage, 15A continuous drain current, 0.29 ohm typical on-resistance, 30 nC gate charge, and 300 mJ avalanche energy. These parameters define its suitability for high-voltage, high-efficiency switching applications.

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