STP15N60M2 - 15A, 600V N-Channel Power MOSFET | STMicroelectronics
MPN: STP15N60M2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.45 | $145.00 |
| 500 | $1.3 | $650.00 |
| 1,000 | $1.2 | $1,200.00 |
Drop-in alternatives for STP15N60M2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STP15N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STP15N60M2-1
β Drop-Inπ Reference alternative (not in catalog)
STP15N60M2-2
β Drop-Inπ Reference alternative (not in catalog)
IPP60R099CP
β Drop-Inπ Reference alternative (not in catalog)
FCP15N60
β Drop-Inπ Reference alternative (not in catalog)
STP15N60M2 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 15 A |
| Continuous Drain Current (ID) at 100Β°C | 9.5 A |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance (RDS(on)) | 0.29 ohm typical, 0.34 ohm max |
| Gate-Source Voltage (VGS) | Β±25 V |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V |
| Total Gate Charge (Qg) | 30 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 80 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Avalanche Energy (EAS) | 300 mJ |
| Operating Temperature Range | -55Β°C to +150Β°C |
| Package | TO-220 |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
STP15N60M2 Pin Configuration
| Pin 1 | Gate β Gate drive input |
| Pin 2 | Drain β Drain connection |
| Pin 3 | Source β Source connection |
Safe Operating Area
Typical Applications
STP15N60M2 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control Inverters, Solar Inverters, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STP15N60M2 is ideal for SMPS due to its 600V rating and low on-resistance, enabling high efficiency in AC-DC converters. In a typical flyback or forward converter, the MOSFET switches at frequencies up to 100 kHz, and the low gate charge (30 nC) reduces switching losses. The device's avalanche ruggedness (300 mJ) ensures reliable operation during load transients. Compared to IGBTs, the MOSFET offers faster switching, which is critical for reducing transformer size. The TO-220 package allows easy heatsinking, and the low RDS(on) minimizes conduction losses, improving overall power supply efficiency by up to 2%.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STP15N60M2 operates in boost converter topology to shape the input current waveform. The 600V rating handles the high voltage stress in universal input applications (85-265V AC). The low gate charge enables high-frequency operation (typically 50-100 kHz), reducing the size of the boost inductor. The fast body diode minimizes reverse recovery losses, improving efficiency. The device's low on-resistance (0.29 ohm) reduces conduction losses, which is crucial for meeting efficiency standards like 80 PLUS. The avalanche rating ensures robustness during line transients.
Recommended
LED Lighting Drivers
The STP15N60M2 is suitable for LED drivers, particularly in offline applications where high voltage isolation is required. In a flyback-based LED driver, the MOSFET switches at high frequency to regulate output current. The 600V rating handles the reflected voltage and leakage spikes. The low gate charge reduces switching losses, improving efficiency and enabling smaller heatsinks. The device's thermal performance (RthJC=1.6Β°C/W) allows it to operate reliably in enclosed fixtures. The avalanche ruggedness protects against inductive spikes from the transformer.
Recommended
Motor Control Inverters
In motor control inverters, the STP15N60M2 is used in the inverter bridge to drive AC motors. The 600V rating is suitable for 230V AC motor drives. The fast switching speed (low Qg) reduces switching losses, allowing higher PWM frequencies for smoother motor control. The low on-resistance minimizes conduction losses, improving overall drive efficiency. The device's avalanche rating ensures robustness during motor regenerative braking. The TO-220 package is easy to mount on heatsinks in industrial drives.
Recommended
Solar Inverters
The STP15N60M2 is used in solar inverters for DC-AC conversion. The 600V rating handles the high voltage from solar panels (up to 500V). The low on-resistance reduces conduction losses, improving the efficiency of the MPPT (Maximum Power Point Tracking) stage. The fast switching speed enables high-frequency operation, reducing the size of magnetic components. The device's robustness against avalanche events is important for handling inductive loads and grid transients. The TO-220 package allows for easy thermal management in outdoor enclosures.
Recommended
Welding Equipment
In welding machines, the STP15N60M2 is used in the inverter stage to convert DC to high-frequency AC. The 600V rating handles the high voltage stress in the inverter. The low gate charge enables high-frequency switching (up to 100 kHz), reducing transformer size and weight. The device's high current capability (15A) supports the high power demands of welding. The avalanche ruggedness ensures reliability during arc strikes and load changes. The TO-220 package is suitable for forced-air cooling in industrial equipment.
Recommended
Recommended Products Summary
Engineering reference data for STP15N60M2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STP15N60M2-EP | IPP60R099CP | FCP15N60 |
|---|---|---|---|---|
| Package | TO-220 | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 15 A | 15 A | 24 A | 15 A |
| On-Resistance (RDS(on)) | 0.29 ohm | 0.29 ohm | 0.099 ohm | 0.32 ohm |
| Total Gate Charge (Qg) | 30 nC | 30 nC | 45 nC | 35 nC |
| Avalanche Energy (EAS) | 300 mJ | 300 mJ | 200 mJ | 250 mJ |
| Automotive Grade | No | No | No | No |
Key Differentiators
- Low on-resistance (0.29 ohm) for reduced conduction losses (vs FCP15N60)
- Low gate charge (30 nC) for fast switching (vs IPP60R099CP)
- High avalanche energy (300 mJ) for robustness (vs IPP60R099CP)
Design Notes
The STP15N60M2 has a junction-to-case thermal resistance of 1.6Β°C/W. For a power dissipation of 50W, the junction temperature rise is 80Β°C above case temperature. A heatsink with a thermal resistance of 1Β°C/W or better is recommended to keep the junction temperature below 150Β°C. Use thermal compound and ensure proper mounting torque (0.55 Nm) for optimal heat transfer.
For the TO-220 package, ensure the drain tab is connected to a large copper area for heat spreading. Keep the gate drive traces short and away from high-current paths to minimize parasitic inductance. Place a 10-ohm gate resistor to dampen ringing, and use a 100nF ceramic capacitor close to the gate-source pins for noise suppression.
Do not exceed the maximum gate-source voltage of Β±25V. Use a gate driver with proper voltage clamping to prevent overvoltage. Ensure the gate drive voltage is at least 10V to achieve the specified on-resistance. For inductive loads, add a freewheeling diode or snubber to prevent avalanche breakdown, even though the device is avalanche-rated.
Compliance Information
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; use STP15N60M2-EP for automotive if available.