1EDN7116GXTMA1 vs 2EDN7533RXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 2EDN7533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β Active
Specification Comparison
| Parameter | 1EDN7116GXTMA1 | 2EDN7533RXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $0.55 |
| Function | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Dual-channel low-side gate driver |
| Driver Configuration | Non-inverting, single low-side | β |
| Number of Drivers | 1 | β |
| Peak Source Current | 2 A (typ) | β |
| Peak Sink Current | 4 A (typ) | β |
| Input Type | Truly Differential Input (TDI) | β |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | β |
| Switch-Node Blocking Voltage | 200 V (max) | β |
| Propagation Delay (Typ) | 9 ns | β |
| Rise Time (Typ) | 3 ns | β |
| Fall Time (Typ) | 3 ns | β |
| Quiescent Current (Typ) | 0.6 mA | β |
| Miller Clamp | Integrated, active | β |
| UVLO | Yes (VCC and gate-rail monitored) | β |
| Operating Temperature Range | -40 Β°C to +125 Β°C | β |
| Package | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) | PG-TSSOP-8 (HTSSOP) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL3 | β |
| RoHS Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | β |
| Number of Channels | β | 2 |
| Input Polarity | β | Inverting |
| Peak Source/Sink Output Current | β | 5 A |
| Output Resistance (Pull-up, typ.) | β | 0.5 ohm |
| Output Resistance (Pull-down, typ.) | β | 0.3 ohm |
| Propagation Delay (typ.) | β | 19 ns |
| Channel-to-Channel Delay Matching | β | 1.3 ns (typ.) |
| Rise/Fall Time | β | 1.7 ns / 1.5 ns (typ., 1 nF load) |
| Input Logic Compatibility | β | LV-TTL |
| Input Voltage Tolerance | β | -12 V to +22 V |
| Supply Voltage VDD (recommended) | β | 4.5 V to 20 V |
| Supply Voltage VDD (absolute max) | β | 25 V |
| Under-Voltage Lockout | β | Yes (per channel) |
| Operating Junction Temperature | β | -40 C to +150 C |