1EDN7116GXTMA1 vs 2EDN7533RXTMA1 비교
다음의 상세 나란히 비교: 1EDN7116GXTMA1 제조: Infineon 및 2EDN7533RXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 1EDN7116GXTMA1 | 2EDN7533RXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.84 | $0.55 |
| 기능 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Dual-channel low-side gate driver |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| 동작 온도 범위 | -40 °C to +125 °C | — |
| 패키지 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-TSSOP-8 (HTSSOP) with exposed pad |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL3 | — |
| RoHS 상태 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Number of Channels | — | 2 |
| Input Polarity | — | Inverting |
| Peak Source/Sink Output Current | — | 5 A |
| Output Resistance (Pull-up, typ.) | — | 0.5 ohm |
| Output Resistance (Pull-down, typ.) | — | 0.3 ohm |
| Propagation Delay (typ.) | — | 19 ns |
| Channel-to-Channel Delay Matching | — | 1.3 ns (typ.) |
| Rise/Fall Time | — | 1.7 ns / 1.5 ns (typ., 1 nF load) |
| Input Logic Compatibility | — | LV-TTL |
| Input Voltage Tolerance | — | -12 V to +22 V |
| Supply Voltage VDD (recommended) | — | 4.5 V to 20 V |
| Supply Voltage VDD (absolute max) | — | 25 V |
| Under-Voltage Lockout | — | Yes (per channel) |
| 동작 접합 온도 | — | -40 C to +150 C |