2EDL5013U2DXTMA1 vs 2EDB7259KXUMA1 Comparison

Detailed side-by-side comparison of 2EDL5013U2DXTMA1 by Infineon and 2EDB7259KXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2EDL5013U2DXTMA1 2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL5013U2DXTMA1 ✓ Active

Specification Comparison

Parameter 2EDL5013U2DXTMA1 2EDB7259KXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Configuration High-Side, Low-Side (Half-Bridge) —
Input Logic Non-Inverting —
Number of Channels 2 2
Peak Source Current 3 A —
Peak Sink Current 3 A —
Output Configuration Non-Inverting —
Supply Voltage (VCC) 4.5 V to 5.5 V —
Bootstrap Voltage Rating 120 V max —
Rise Time (typ.) 4.4 ns —
Fall Time (typ.) 3.5 ns —
Miller Clamp 7 A active Miller clamp —
Bootstrap Diode Integrated —
UVLO VCC and VBS under-voltage lockout —
Operating Temperature Range -40C to +125C —
Package PG-TSNP-12-5 (12-pin, 5x5 mm) 13-LGA (5x5 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Type — Isolated Gate Driver IC
Source Drive Current — 5 A
Sink Drive Current — 9 A
Isolation Voltage — 2500 Vrms
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay — 38 ns
Supply Voltage — 12 V to 18 V
Operating Temperature — -40C to +125C
Technology — Coreless Transformer Isolation
Protection Features — UVLO, Short-Circuit, Miller Clamp
Output Stage — Rail-to-rail p-channel sourcing

Datasheets & Resources

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