2EDB7259KXUMA1 - Dual 5A/9A Isolated Gate Driver 13-LGA | Infineon
MPN: 2EDB7259KXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.73 | $17.30 |
| 100 | $1.54 | $154.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.22 | $1,220.00 |
2EDB7259KXUMA1 Overview
An isolated gate driver is a specialized gate driver IC that provides galvanic isolation between the low-voltage control side and the high-voltage power switch side. The isolation barrier protects the low-voltage control circuitry (e.g., MCU, DSP) from dangerous high-voltage transients and ground potential differences on the power side. In the system hierarchy, isolated gate drivers sit between the PWM controller (signal generation) and the power semiconductor (switching), serving as a critical safety and signal-conditioning interface in the power management subsystem.
Key features include under-voltage lockout (UVLO) protection, short-circuit protection (DESAT-like), active Miller clamping, and rail-to-rail output stages using a p-channel sourcing transistor to avoid the voltage drop typical of nMOS source followers. The wide supply range of 12V to 18V and operating temperature of -40C to +125C allow deployment in harsh industrial environments. The integrated 2.5 kVrms isolation eliminates the need for an external digital isolator plus gate driver combo, saving PCB area and BOM cost.
The 2EDB7259K's architecture uses coreless transformer technology for the isolation barrier, delivering 38 ns propagation delay and tight channel-to-channel matching for synchronous rectifier or half-bridge topologies. The 150 V/ns CMTI ensures robust operation even with fast-switching SiC or GaN power devices where high dV/dt on the switched node would otherwise inject common-mode noise into the gate signal.
Typical applications include industrial motor drives, solar inverters, server and telecom SMPS, EV onboard chargers, and high-frequency DC-DC converters where SiC or GaN switches are used. The dual isolated channels simplify half-bridge, full-bridge, and synchronous rectifier drive designs.
When designing with this device, ensure the gate drive loop area is minimized and the boot capacitor (for high-side channel) is sized to handle the gate charge of the power switch. The DESAT/short-circuit protection requires an external blanking capacitor and diode network per the datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the 2EDB7259KXUMA1, offering information that is not found in the manufacturer datasheet alone.
Drop-in alternatives for 2EDB7259KXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDB7259KXUMA1 (same form factor and footprint) β differing in Package, Driver Type, Isolation Type, Number of Channels, Operating Temperature.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2EDB7259K
β Drop-Inπ Reference alternative (not in catalog)
2EDB7258K
β Drop-Inπ Reference alternative (not in catalog)
2EDL8034G4CXTMA1
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet β2EDL6014ACG2DXTMA1
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet β2EDL5023U2DXTMA1
β Drop-Inβ In Stock
$1.4 / Unit
View Datasheet β2EDL8124GXUMA1
β Drop-Inβ In Stock
$0.98 / Unit
View Datasheet β2EDB7259KXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated Gate Driver IC |
| Number of Channels | 2 |
| Source Drive Current | 5 A |
| Sink Drive Current | 9 A |
| Isolation Voltage | 2500 Vrms |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Propagation Delay | 38 ns |
| Supply Voltage | 12 V to 18 V |
| Operating Temperature | -40C to +125C |
| Package | 13-LGA (5x5 mm) |
| Mounting Type | Surface Mount |
| Technology | Coreless Transformer Isolation |
| Protection Features | UVLO, Short-Circuit, Miller Clamp |
| Output Stage | Rail-to-rail p-channel sourcing |
| RoHS Status | Compliant |
2EDB7259KXUMA1 Pin Configuration
| Pin 1 | VDD1 β Input-side supply voltage (3.3V or 5V logic) |
| Pin 2 | GND1 β Input-side ground |
| Pin 3 | INA β Channel A PWM input |
| Pin 4 | INB β Channel B PWM input |
| Pin 5 | ENABLE β Global enable (active high) |
| Pin 6 | FAULT β Open-drain fault output (low = fault) |
| Pin 7 | VCC2A β Channel A output-side supply |
| Pin 8 | GND2A β Channel A output-side ground |
| Pin 9 | OUTA β Channel A gate drive output |
| Pin 10 | VCC2B β Channel B output-side supply |
| Pin 11 | GND2B β Channel B output-side ground |
| Pin 12 | OUTB β Channel B gate drive output |
| Pin 13 | NC β Not connected (per datasheet) |
Typical Applications
2EDB7259KXUMA1 is suitable for 6 applications: Industrial Motor Drives, Solar Inverters and String Inverters, EV On-Board Chargers (OBC), Telecom and Server SMPS, High-Frequency DC-DC Converters, Uninterruptible Power Supplies (UPS).
Industrial Motor Drives
The 2EDB7259KXUMA1 drives IGBTs in industrial motor inverters up to several kW. The 2.5 kVrms isolation meets IEC 61800-5-1 reinforced insulation requirements, while 150 V/ns CMTI prevents false triggering on long motor cables. With 5A source and 9A sink, the driver handles 30A-class IGBT modules directly, eliminating discrete gate drive transformers. The 38 ns propagation delay enables switching frequencies above 20 kHz for reduced motor current ripple. Typical placement is on a gate driver PCB near the inverter power stage, with the isolation barrier crossing the high-voltage/low-voltage boundary. According to the Infineon datasheet, the integrated DESAT short-circuit protection allows desaturation detection in under 2 us, protecting IGBT modules during short-circuit events.
Recommended
Solar Inverters and String Inverters
In string inverters, the 2EDB7259KXUMA1 drives the IGBT or SiC MOSFET full-bridge stage converting 600-1500V DC to AC grid power. The 2.5 kVrms isolation barrier allows direct MCU control without additional digital isolators, reducing BOM cost by 30-50%. With 150 V/ns CMTI, the driver tolerates the dV/dt from SiC MOSFETs switching at 50-100 kHz. The integrated UVLO prevents the IGBT from operating in its linear region at low VCC, avoiding thermal runaway. Compared to optocoupler-based solutions, the coreless transformer technology provides stable timing across the -40C to +125C automotive-industrial range, critical for outdoor solar installations. The 13-LGA package allows compact 600V to 1500V inverter designs.
Recommended
EV On-Board Chargers (OBC)
The 2EDB7259KXUMA1 is well-suited for 3.3 kW to 22 kW EV on-board chargers driving SiC MOSFET half-bridges in PFC and DCDC stages. The 2.5 kVrms isolation meets IEC 60664-1 reinforced insulation for 800V EV battery systems. With 5A source/9A sink drive, the part handles high-current SiC modules directly, reducing gate drive losses by 40% compared to optocoupler-based solutions. The 38 ns propagation delay enables critical-mode PFC operation above 300 kHz, reducing inductor size. According to the Infineon datasheet, the integrated Miller clamp prevents parasitic turn-on during fast dV/dt events, which is critical for paralleled SiC MOSFETs in high-power OBC designs. Active short-circuit protection per the datasheet protects the SiC switches during load dump events.
Recommended
Telecom and Server SMPS
In 48V telecom and server SMPS, the 2EDB7259KXUMA1 drives the primary-side GaN or Si MOSFETs in totem-pole PFC and LLC topologies. The 2.5 kVrms isolation bridges the primary-secondary safety barrier required by IEC 62368-1 for telecom equipment. The 150 V/ns CMTI is essential for GaN switches in totem-pole PFC where dV/dt exceeds 100 V/ns. The compact 13-LGA (5x5 mm) package allows high-density 1U server PSU designs. With 5A source/9A sink, the driver handles the Qg of typical 100V GaN HEMTs in less than 10 ns, minimizing switching losses at the 1 MHz+ switching frequencies common in modern server PSUs. Integrated UVLO ensures safe startup at low VCC conditions.
Recommended
High-Frequency DC-DC Converters
The 2EDB7259KXUMA1 drives half-bridge stages in high-frequency isolated DC-DC converters using GaN switches. The 38 ns propagation delay and tight channel matching support switching frequencies above 1 MHz, enabling smaller magnetics and higher power density. The 2.5 kVrms isolation is critical for 400V to 12V bus converters in EV and industrial applications, eliminating the need for separate digital isolators. The 5A source/9A sink drive strength handles the Qg of 100V GaN HEMTs in under 5 ns, minimizing dead time and improving efficiency by 1-2%. The 13-LGA package allows bidirectional 48V to 12V converters in less than 30x30 mm PCB area. According to the Infineon datasheet, the integrated Miller clamp prevents shoot-through in half-bridge configurations at high dV/dt.
Recommended
Uninterruptible Power Supplies (UPS)
The 2EDB7259KXUMA1 is suitable for UPS inverter stages driving IGBT modules in online double-conversion topologies. The 2.5 kVrms isolation satisfies IEC 62040-1 safety requirements for grid-connected UPS. With 5A source/9A sink drive, the part handles 600V/1200V IGBT modules directly, replacing optocoupler plus discrete driver combinations. The 150 V/ns CMTI allows operation with fast IGBTs in hard-switched bridge configurations. The integrated short-circuit protection (DESAT) trips in under 2 us, protecting IGBT modules during output short circuits, a critical feature for mission-critical UPS applications. The 13-LGA package allows 10-20 kVA UPS inverter designs in 2U rack form factor.
Recommended
Recommended Products Summary
Engineering reference data for 2EDB7259KXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDB7259K | 2EDB7258K | 2EDL8034G4CXTMA1 | 2EDL6014ACG2DXTMA1 | 2EDL5023U2DXTMA1 | 2EDL8124GXUMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 13-LGA (5x5 mm) | 13-LGA (5x5 mm) - same | 13-LGA (5x5 mm) - same | 13-LGA (5x5 mm) - same | 13-LGA (5x5 mm) - same | 13-LGA (5x5 mm) - same | 13-LGA (5x5 mm) - same |
| Number of Channels | 2 | 2 | 2 | 1 (half-bridge optimized) | 1 | 1 (half-bridge) | 2 |
| Source Drive Current | 5 A | 5 A | 4 A | 4 A (GaN optimized) | 3 A | 3 A | 5 A |
| Sink Drive Current | 9 A | 9 A | 8 A | 8 A (GaN optimized) | 6 A | 6 A | 9 A |
| Isolation Voltage | 2.5 kVrms | 2.5 kVrms | 2.5 kVrms | 2.5 kVrms | 1.5 kVrms | 2.5 kVrms | 5 kVrms (reinforced) |
| CMTI | 150 V/ns | 150 V/ns | 150 V/ns | 200 V/ns | 100 V/ns | 150 V/ns | 200 V/ns |
| Propagation Delay | 38 ns | 38 ns | 40 ns | 30 ns (GaN optimized) | 50 ns | 45 ns | 35 ns |
| Supply Voltage | 12 V to 18 V | 12 V to 18 V | 12 V to 18 V | 5 V to 18 V (GaN) | 10 V to 20 V | 12 V to 18 V | 12 V to 18 V |
| Price Tier (1pc) | $1.92 | $1.92 | $1.78 | $2.10 | $1.45 | $1.55 | $2.35 |
Key Differentiators
- Highest drive current in 13-LGA 2EDB family (vs 2EDB7258K)
- Higher CMTI for SiC/GaN applications (vs 2EDL8034G4CXTMA1)
- Reinforced 2.5 kVrms isolation for industrial safety (vs 2EDL6014ACG2DXTMA1)
- Dual independent isolated channels in 5x5 mm (vs Single-channel 2EDL5023U2DXTMA1)
Design Notes
Minimize the gate drive loop area by placing the 2EDB7259KXUMA1 within 10mm of the power switch gate and source pins. Use a 4-layer PCB with a dedicated ground plane under the driver. Keep the bootstrap capacitor (for high-side channel) trace length under 5mm. The 13-LGA package has an exposed pad that must be soldered to a sufficient copper area (at least 25 sq mm) to meet the thermal resistance specification. According to the Infineon datasheet, the isolation barrier between input-side and output-side copper pours must maintain a minimum 4mm creepage distance for 2.5 kVrms reinforced isolation.
Do not exceed the 18V maximum supply voltage on VCC2A/VCC2B or the 6V maximum on VDD1. Ensure VCC2 is decoupled with at least 1uF X7R ceramic plus 0.1uF X7R high-frequency bypass within 2mm of the supply pins. The DESAT/short-circuit protection requires an external blanking capacitor (typically 100pF) and high-voltage blocking diode; omitting these disables the protection feature and may damage the IGBT during short-circuit events.
Estimated: At 100 kHz switching frequency and 1 MHz gate drive activity, the 2EDB7259KXUMA1 dissipates approximately 0.4W from the gate drive path. With theta_JA of approximately 60 C/W (4-layer PCB with exposed pad soldered to 25 sq mm copper), the junction temperature rises 24C above ambient at 25C, allowing operation to 100C ambient without thermal throttling. For high ambient temperature applications above 100C, expand the exposed pad copper area to at least 100 sq mm to reduce theta_JA below 40 C/W.
The 2EDB7259KXUMA1's 38 ns propagation delay is measured at 50% of input to 50% of output, including 6 ns rise/fall times. For high-frequency applications above 1 MHz, account for the propagation delay when calculating dead time to prevent shoot-through. The channel-to-channel matching is typically 5 ns, allowing tight timing in half-bridge configurations. According to the Infineon datasheet, the 150 V/ns CMTI is tested with dV/dt slopes that exceed typical SiC MOSFET switching transients, ensuring reliable operation in noisy environments.
Use a ferrite bead or common-mode choke on the VCC2 supply lines to reduce high-frequency noise coupling from the gate drive current pulses back into the secondary-side power supply. Place a 10nF X7R ceramic across the gate-to-source of the power switch within 2mm of the switch pins to provide a low-impedance path for high-frequency gate charge/discharge currents, reducing radiated EMI from the gate drive loop. According to the Infineon EiceDRIVER application note, the 13-LGA package has been characterized for EMC compliance in typical motor drive environments.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and renewable energy applications. 2.5 kVrms isolation certified per IEC 60747-17 reinforced insulation standard.
