2EDN7533RXTMA1 vs 2ED2103S06FXUMA1 Comparison

Detailed side-by-side comparison of 2EDN7533RXTMA1 by Infineon and 2ED2103S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDN7533RXTMA1 2ED2103S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Dual-channel low-side gate driver Half-Bridge Gate Driver
Number of Channels 2 —
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns —
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL —
Input Voltage Tolerance -12 V to +22 V —
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
Operating Junction Temperature -40 C to +150 C —
Package PG-TSSOP-8 (HTSSOP) with exposed pad PG-DSO-8-69 (DSO-8 with exposed pad)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Configuration — Non-Inverting
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Bootstrap Diode — Integrated
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Operating Temperature Range — -40C to +125C
MSL Level — [DATA_NEEDED: MSL level]

Datasheets & Resources

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