2N7002-7-F vs 2N7002H6327XTSA2 Comparison

Detailed side-by-side comparison of 2N7002-7-F by Diodes Incorporated and 2N7002H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002-7-F 2N7002H6327XTSA2
Brand Diodes Incorporated Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.08
Transistor Type N-Channel Enhancement-Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical value]
Package SOT-23-3 (TO-236) PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: Tj / TA operating range] -55C to +150C (Tj)
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] [DATA_NEEDED: Ciss]
RoHS Status Compliant Compliant
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement Enhancement
Technology Trench MOSFET OptiMOS (Planar)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 300 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
MSL Level — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Qualification — Industrial / Commercial Grade

Datasheets & Resources

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