2N7002-7-F vs 2N7002L Comparison

Detailed side-by-side comparison of 2N7002-7-F by Diodes Incorporated and 2N7002L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002-7-F 2N7002L
Brand Diodes Incorporated onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.08 $0.03
Transistor Type N-Channel Enhancement-Mode MOSFET N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS max) 60 V —
Continuous Drain Current (ID) at Ta 115 mA —
Continuous Drain Current Range (per Mouser listing) 105 mA to 210 mA —
Power Dissipation (PD) at Ta 370 mW —
On-Resistance RDS(on) 7.5 ohm to 13.5 ohm —
Gate-Source Voltage (VGS) +/-20 V +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 1 V to 2.5 V
Package SOT-23-3 (TO-236) SOT-23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: Tj / TA operating range] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge typical] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Terminal Finish Matte tin (solderable per MIL-STD-202, method 208) —
Channel Mode Enhancement —
Technology Trench MOSFET High cell density trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 115 mA (Ta)
On-State Resistance (RDS(on)) — 7.5 ohm max at VGS = 5V
Power Dissipation (PD) — 200 mW (Ta), 225 mW max
Configuration — Single FET
Switching Performance — Fast switching, rugged and reliable
Gate Drive — 5V logic-level enhancement mode
Typical Applications — Low-side switching, servo motor control, gate driving, logic-level shifting
Manufacturer — onsemi

Datasheets & Resources

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