2N7002-7-F vs 2N7002L Vergleich
Detaillierter Direktvergleich von 2N7002-7-F von Diodes Incorporated und 2N7002L von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
2N7002-7-F ✓ Aktiv
Spezifikationsvergleich
| Parameter | 2N7002-7-F | 2N7002L |
|---|---|---|
| Marke | Diodes Incorporated | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,08 | $0,03 |
| Transistortyp | N-Channel Enhancement-Mode MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS max) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 115 mA | — |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA | — |
| Power Dissipation (PD) at Ta | 370 mW | — |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm | — |
| Gate-Source Voltage (VGS) | +/-20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1 V to 2.5 V |
| Gehäuse | SOT-23-3 (TO-236) | SOT-23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj / TA operating range] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge typical] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) | — |
| Channel Mode | Enhancement | — |
| Technology | Trench MOSFET | High cell density trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |