2N7002H6327XTSA2 vs BSS138NH6327XTSA2 Comparison
Detailed side-by-side comparison of 2N7002H6327XTSA2 by Infineon and BSS138NH6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2N7002H6327XTSA2 | BSS138NH6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Operating Temperature Range | -55C to +150C (Tj) | [DATA_NEEDED: Tj max and operating range] |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 60 V |
| R_DS(on) max @ V_GS=10V | — | 3.5 ohm |
| Continuous Drain Current (Ta) | — | 230 mA |
| Power Dissipation (Ta) | — | 360 mW |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: typical V_GS(th) value] |
| Gate-Source Voltage V_GS max | — | ±20 V |
| dv/dt Rated | — | Yes |
| Halogen Free | — | Yes (per IEC 61249-2-21) |
| RoHS Compliance | — | Compliant |
| AEC-Q101 Qualification | — | Qualified |
| Lead Plating | — | Pb-free |
| Marking Code | — | [DATA_NEEDED: top-side marking code] |
| Packaging | — | Tape and Reel |