2N7002L vs SSM3K35CT-L3F Comparison

Detailed side-by-side comparison of 2N7002L by onsemi and SSM3K35CT-L3F by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002L SSM3K35CT-L3F
Brand onsemi Toshiba
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.09
Transistor Type N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: VGS(th) typical/min/max]
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET —
Mounting Type Surface Mount Surface Mount
Package SOT-23 (SOT-23-3) SOT-883 (CST3), 3 pins
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi Toshiba Electronic Devices & Storage Corporation
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (V(DSS)) — 20 V
Gate-Source Voltage (V(GSS)) — ±10 V (per datasheet, [DATA_NEEDED: exact value])
Continuous Drain Current (I(D)) — 0.18 A (180 mA)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS = 2.5 V]
Power Dissipation (P_D) — 500 mW (Ta) / [DATA_NEEDED: Ta condition]
Package Size — 1.0 mm x 0.6 mm, max height 0.5 mm
Operating Temperature — [DATA_NEEDED: junction/storage temperature range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Lead-Free — Yes (L3F suffix)
Tape and Reel — 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix)

Datasheets & Resources

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