2N7002L vs SSM3K35CT-L3F 비교
다음의 상세 나란히 비교: 2N7002L 제조: onsemi 및 SSM3K35CT-L3F 제조: Toshiba. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2N7002L | SSM3K35CT-L3F |
|---|---|---|
| 브랜드 | onsemi | Toshiba |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.03 | $0.09 |
| 트랜지스터 유형 | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | — |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | — |
| Technology | High cell density trench MOSFET | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 | SOT-23 (SOT-23-3) | SOT-883 (CST3), 3 pins |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | Toshiba Electronic Devices & Storage Corporation |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (V(DSS)) | — | 20 V |
| Gate-Source Voltage (V(GSS)) | — | ±10 V (per datasheet, [DATA_NEEDED: exact value]) |
| Continuous Drain Current (I(D)) | — | 0.18 A (180 mA) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] |
| Power Dissipation (P_D) | — | 500 mW (Ta) / [DATA_NEEDED: Ta condition] |
| Package Size | — | 1.0 mm x 0.6 mm, max height 0.5 mm |
| 동작 온도 | — | [DATA_NEEDED: junction/storage temperature range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Lead-Free | — | Yes (L3F suffix) |
| Tape and Reel | — | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) |